AF60N03

AF60N03 ANACHIP | Alldatasheet

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N-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 8, 2005 „ Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product „ Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) 30 12 45 „ Pin Assignments S D G (Front View) „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. „ Pin Descriptions Pin Name Description S Source G Gate D Drain „ Ordering information A X 60N03 X X PN PackageFeature F :MOSFET D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel „ Block Diagram S G D

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC=25ºC 45 ID Continuous Drain Current, V GS=10V TC=100ºC 32 A IDM Pulsed Drain Current (Note 1) 120 A Total Power Dissipation T C=25ºC 44 W PD Linear Derating Factor 0.352 W/ºC TSTG Storage Temperature Range -55 to 175 ºC TJ Operating Junction Temperature Range -55 to 175 ºC „ Thermal Data Symbol Parameter Maximum Units RθJC Thermal Resistance Junction-Case Max. 3.4 ºC/W RθJA Thermal Resistance Junction- Ambient Max. 110 ºC/W „ Electrical Characteristics (TJ=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ∆BVDSS/∆TJ Breakdown Voltage Temperature Coefficient Reference to 25ºC, ID=1mA - 0.026 - V/ºC VGS=10V, ID=20A - - 12 RDS(ON) Static Drain-Source On-Resistance (Note 2) VGS=4.5V, ID=15A - - 25 mΩ VGS(th) Gate Threshold Voltage V DS= VGS, ID=250uA 1 - 3 V gfs Forward Transconductance (Note 2) VDS=10V, ID=10A - 25 - S Drain-Source Leakage Current (TJ=25ºC) VDS=30V, VGS=0V - - 1 IDSS Drain-Source Leakage Current (TJ=175ºC) VDS=24V, VGS=0V - - 250 uA IGSS Gate Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 2) - 11.6 - Qgs Gate-Source Charge - 3.9 - Qgd Gate-Drain (“Miller”) Charge ID=20A VDS=20V VGS=4.5V - 7 - nC td(on) Turn-On Delay Time (Note 2) - 8.8 - tr Rise Time - 57.5 - td(off) Turn-Off Delay Time - 18.5 - tf Fall-Time VDS=15V ID=20A RG=3.3Ω, VGS=10V RD=0.75Ω - 6.4 - nS Ciss Input Capacitance - 1135 - Coss Output Capacitance - 200 - Crss Reverse Transfer Capacitance VGS=0V VDS=25V, f=1.0MHz - 135 - pF „ Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage (Note 2) I S=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time - 23.3 - ns Qrr Reverse Recovery Charge IS=20A, VGS=0V, dl/dt=100A/µs - 16 - nC Note 1: Pulse width limited by safe operating area. Note 2: Pulse width < 300us, duty cycle < 2%.

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v . s . J u n c t i o n T e m p e r a t u r e Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. R e v e r s e D i o d e J u n c t i o n T e m p e r a t u r e

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Marking Information TO-252 Logo Part Number YY : Year WW: Nth week X : Internal code ( Optional) ( Top View) 60N03 YYWWX „ Package Information Package Type: TO-252 D E2E1F (0.1mm) C e e R: 0.127~0.381 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.70 E3 3.50 4.00 4.50 e - 2.30 - C 0.35 0.50 0.65