AF4935 ANACHIP | Alldatasheet
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Technical content
Dual P-Channel 30-V (D-S) MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended V GS range (±25) for battery pack
applications
Product Summary VDS (V) rDS(on) (mΩ) ID (A) Pin Assignments SOP-8 1 D D D D S G S G General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Pin Descriptions Pin Name Description S Source G Gate D Drain Ordering information AX 4935P X X X PN PackageFeature F :MOSFET S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
Dual P-Channel 30-V (D-S) MOSFET Anachip Corp. Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V TA=25ºC -8.0 ID Continuous Drain Current (Note 1) TA=70ºC -7.2 A IDM Pulsed Drain Current (Note 2) ±30 A IS Continuous Source Current (Diode Conduction) (Note 1) -2.1 A TA=25ºC 2.0 PD Power Dissipation (Note 1) TA=70ºC 1.3 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ºC Thermal Resistance Ratings Symbol Parameter Maximum Units RθJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W RθJA Maximum Junction-to-Ambient (Note 1) t < 5 sec 78 ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source breakdown Voltage V GS=0V, ID=-250uA -30 - - V VGS(th) Gate-Threshold Voltage V DS= VGS, ID=-250uA -1 -1.6 -3 V IGSS Gate-Body Leakage V DS=0V, VGS=±25V - - ±100 nA VDS=-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V, TJ=55ºC - - -5 uA ID(on) On-State Drain Current (Note 3) V DS=-5V, VGS=-10V -30 - - A VGS=-10V, ID=-7.5A - 19 21 VGS=-4.5V, ID=-5.5A - 28 35 rDS(on) Drain-Source On-Resistance (Note 3) VGS=-10V, ID=-7A, TJ=125ºC - 26 34 mΩ gfs Forward Tranconductance (Note 3) V DS=-5V, ID=-13A - 19 - S VSD Diode Forward Voltage I S=2.1A, VGS=0V - -0.7 -1.2 V Dynamic (Note 4) Qg Total Gate Charge - 15 22 Qgs Gate-Source Charge - 4.7 - Qgd Gate-Drain Charge VDS=-15V, VGS=-5V, ID=-7A - 4.8 - nC Switching td(on) Turn-On Delay Time - 14 23 tr Rise Time - 11 20 td(off) Turn-Off Delay Time - 48 76 tf Fall-Time VDD=-15, RL=6Ω, ID=-1A, VGEN=-10V - 25 39 nS Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing.
Dual P-Channel 30-V (D-S) MOSFET Anachip Corp. Marking Information SOP-8L ( Top View ) 4 9 3 5 P AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free; "X": Lead FreeLogo Package Information Package Type: SOP-8L VIEW "A" L C VIEW "A" H E A A2A1Be D 7 (4X) 0.015x45 7 (4X) y A1 0.10 - 0.25 0.040 - 0.100 θ 0O - 8 O 0 O - 8 O