AF4835P ANACHIP | Alldatasheet
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P-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Nov 19, 2004 Features - Simple Drive Requirement - Low On-resistance - Fast Switching Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) -30 20 -8 Pin Assignments SOP-8 1 D D D D S S S G General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Name Description S Source G Gate D Drain Ordering information AX 4835P X X X PN PackageFeature F :MOSFET S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
P-Channel Enhancement Mode Power MOSFET Anachip Corp. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V TA=25ºC -8 ID Continuous Drain Current (Note 1) TA=70ºC -6 A IDM Pulsed Drain Current (Note 2) -50 A Total Power Dissipation 2.5 W PD Linear Derating Factor TA=25ºC 0.02 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC Thermal Data Symbol Parameter Maximum Units Rthj-amb Thermal Resistance Junction-ambient ( N o t e 1 ) Max. 50 ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=-1mA - -0.037 - V/ oC VGS=-10V, ID=-8A - - 20 RDS(ON) Static Drain-Source On-Resistance (Note 3) VGS=-4.5V, ID=-5A - - 35 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-15V, ID=-8A - 20 - S Drain-Source Leakage Current (TJ=25oC) VDS=-30V, VGS=0V - - -1 IDSS Drain-Source Leakage Current (TJ=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 3) - 36 - Qgs Gate-Source Charge - 5.5 - Qgd Gate-Drain (“Miller”) Charge ID=-4.6A, VDS=-15V, VGS=-10V - 3.5 - nC td(on) Turn-On Delay Time (Note 3) - 12 - tr Rise Time - 8 - td(off) Turn-Off Delay Time - 75 - tf Fall-Time VDS=-15V, ID=-1A, RG=6Ω, VGS=-10V RD=15Ω - 40 - ns Ciss Input Capacitance - 1530 - Coss Output Capacitance - 900 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1.0MHz - 280 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit IS Continuous Source Current (Body Diode) VD=VG=0V, VS=-1.2V - - -2.08 A VSD Forward On Voltage (Note 3) TJ=25oC, IS=-2.1A, Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 o C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
P-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation
P-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics (Continued) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature
P-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics (Continued) Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
P-Channel Enhancement Mode Power MOSFET Anachip Corp. Marking Information SOP-8L ( Top View ) 4 8 3 5 P AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free; "X": Lead FreeLogo Package Information Package Type: SOP-8L VIEW "A" L C VIEW "A" H E A A2A1Be D 7 (4X) 0.015x45 7 (4X) y A1 0.10 - 0.25 0.040 - 0.100 θ 0O - 8 O 0 O - 8 O