AF4410N ANACHIP | Alldatasheet
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N-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 30, 2005 Features - Simple Drive Requirement - Low On-resistance - Fast Switching Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) 30 13.5 10 Pin Assignments SO-8 1 D D D D S S S G General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Name Description S Source G Gate D Drain Ordering information A X 4410N X X X PN PackageFeature F :MOSFET S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±25 V TA=25ºC 10 ID Continuous Drain Current (Note 1) TA=70ºC 8 A IDM Pulsed Drain Current (Note 2) 50 A Total Power Dissipation 2.5 W PD Linear Derating Factor TA=25ºC 0.02 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC Thermal Data Symbol Parameter Maximum Units Rthj-amb Thermal Resistance Junction-ambient ( N o t e 1 ) Max. 50 ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=1mA - 0.037 - V/ oC VGS=10V, ID=10A - - 13.5 RDS(ON) Static Drain-Source On-Resistance (Note 3) VGS=4.5V, ID=5A - - 22 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=15V, ID=10A - 20 - S Drain-Source Leakage Current (TJ=25oC) VDS=30V, VGS=0V - - 1 IDSS Drain-Source Leakage Current (TJ=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±25V - - ±100 nA Qg Total Gate Charge (Note 3) - 13.5 - Qgs Gate-Source Charge - 4 - Qgd Gate-Drain (“Miller”) Charge ID=10A, VDS=15V, VGS=5V - 7 - nC td(on) Turn-On Delay Time (Note 3) - 14 - tr Rise Time - 16 - td(off) Turn-Off Delay Time - 21 - tf Fall-Time VDS=25V, ID=1A, RG=3.3Ω, VGS=5V RD=25Ω - 15 - ns Ciss Input Capacitance - 1160 - Coss Output Capacitance - 240 - Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1.0MHz - 165 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage (Note 3) I S=2.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time - 17.1 - ns Qrr Reverse Recovery Charge IS=5A, VGS=0V, dl/dt=100A/µs - 12 - nC Note 1: Surface mounted on 1 in copper pad of FR4 board, 125 o C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics (Continued)
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Marking Information SO-8 ( Top View ) 4 4 1 0 N AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free; "X": Lead FreeLogo Package Information Package Type: SO-8 L C DETAIL A E E1A D 8 765 234 e B θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 L 0.38 0.71 1.27 θ 0 o 4 o 8 o e 1.27 TYP.
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