AF2302N ANACHIP | Alldatasheet

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20V N-Channel Enhancement Mode MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 „ Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package „ Pin Assignments (Top View) 1. G 2. S 3. D „ Product Summary VDS = 20V RDS (on), VGS@4.5V, IDS@3.6A =65mΩ. RDS (on), VGS@2.5V, IDS@3.1A =95mΩ. „ Pin Descriptions Pin No. Pin Name Description

1 G Gate

2 S Source

3 D Drain

„ Ordering information AX 2302N X X X PN PackageFeature F :MOSFET W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel „ Block Diagram S G D

20V N-Channel Enhancement Mode MOSFET Anachip Corp. „ Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID C o n t i n u o u s D r a i n C u r r e n t 2 . 4 A IDM Pulsed Drain Current 10 A TA=25ºC 1.25 PD Maximum Power Dissipation TA=70ºC 0.8 W TJ Operating Junction Temperature +150 ºC TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 ºC „ Thermal Performance Symbol Parameter Limit Units TL Lead Temperature (1/8” from case) 5 S RθJA Junction to Ambient Thermal Resistance (PCB mounted) 100 ºC/W Note: Surface mounted on FR4 board t < 5 sec. „ Electrical Characteristics Rate ID=2.4A, (TA=25oC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V VGS=4.5V, ID=3.6A - 50 65 RDS(ON) Drain-Source On-State Resistance VGS=2.5V, ID=3.1A - 75 95 mΩ VGS(TH) Gate Threshold Voltage V DS= VGS, ID=250uA 0.45 - - V IDSS Zero Gate Voltage Drain Current V DS=20V, VGS=0V - - 1.0 uA IGSS Gate Body Leakage V GS=±8V, VDS=0V - - ±100 nA ID(ON) On-State Drain Current V DS=5V, VGS=4.5V 6 - - A gfs Forward Tranconductance V DS=5V, ID=3.6A - 10 - S Dynamic Qg Total Gate Charge - 5.2 10 Qgs Gate-Source Charge - 0.65 - Qgd Gate-Drain Charge VDS=10V, ID=3.6A, VGS=4.5V - 1.5 - nC td(on) Turn-On Delay Time - 7 15 tr Turn-On Rise Time - 55 80 td(off) Turn-Off Delay Time - 16 60 tf Turn-Off Fall-Time VDD=10V, RL=10Ω, ID=1A, VGEN=4.5V, RG=6Ω - 10 25 nS Ciss Input Capacitance - 450 - Coss Output Capacitance - 70 - Crss Reverse Transfer Capacitance VDS=10V, VGS=0V, f=1.0MHz - 43 - pF Source-Drain Diode IS Max. Diode Forward Current - - 1.6 A VSD Diode Forward Voltage I S=1.0A, VGS=0V - 0.75 1.2 V Note: Pulse test: pulse width < 300uS, duty cycle < 2%

20V N-Channel Enhancement Mode MOSFET Anachip Corp. „ Marking Information XX YW SOT23 Date code Y : Year W : Week(A~Z) XX: Device Code (Top View) (See Appendix) Appendix Part Number Package Device Code AF2302N SOT23-3 02 „ Switching Test Circuit S G D VDD RGVGEN VIN VOUT RD OUT „ Switching Waveforms PULSE WIDTH ton trtd(on) 90% Output, VOUT 10% 10% 50% Input, VIN toff td(off) tf 90% 10% 90% 50% INVERTED

20V N-Channel Enhancement Mode MOSFET Anachip Corp. „ Package Information C L e E HE D A1b A Dimensions In Millimeters Dimensions In Inches Symbol A1 0.00 - 0.10 0.000 - 0.004 b 0.35 - 0.50 0.014 - 0.020 L 0.30 - 0.55 0.012 - 0.022