AF002C1-39 ALPHA | Alldatasheet

Document overview

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Technical content

Features

■ Low Cost SOT -23 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Blocks ■ Pin Diode Replacements ■ High Power Antenna Switches SOT-23

Description

This group of GaAs control FETs can be used in both series and shunt configurations.They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the device ideal replacements for PIN diodes, where low DC drain is critical. Isolation performance degrades at higher frequencies due to package parasitics. They can be tuned out in narrow band applications as shown in the circuit examples on the following pages. Parameter Condition Frequency Min. Typ. Max. Unit Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 6 ns On, Off (50% CTL to 90/10% RF) 12 ns Control Voltages V Low = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 50 µA to -9 V @ 200 µA Max. Operating Characteristics at 25°C (0, -5 V) 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. DC = 300 kHz. 3. R ON - resistance in Ω in low impedance state when “0” V is applied to Gate (G). 4. Insertion loss changes by 0.003 dB/°C. 5. Insertion loss and isolation typical values. 6. C OFF - capacitance (pF) in high impedance state when -5 V is applied to Gate (G).

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 2 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.3/99A Insertion Loss vs. Frequency Series C onfiguration 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 C 4 C 1 0 0.5 1 1.5 2 2.5 3 Frequency (G H z) Insertion Loss (dB) Isolation vs. Frequency Series C onfiguration 0 0.5 1 1.5 2 2.5 3 Frequency (G H z) Isolation (dB) C 4 C 1 Insertion Loss vs. Frequency Shunt C onfiguration 0 0.5 1 1.5 2 2.5 3 Frequency (G H z) Insertion Loss (dB) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 C 1 C 4 Isolation vs. Frequency Shunt C onfiguration 0 0.5 1 1.5 2 2.5 3 Frequency (G H z) Isolation (dB) C 1 C 4 Typical Performance Data (0, -5 V) Characteristic Value RF Input Pow er 2 W > 500 MHz 0/-8 V

0.5 W @ 50 MHz 0/-8 V

Control Voltage +0.2 V, -10 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Θ JC 25°C/W Absolute Maximum Ratings Note:Exceeding these parameters may cause irreversible damage. Characteristic Value RF Input Pow er 12 W > 450 MHz, 0/-12 V Control Voltage +0.2, -12 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Θ JC 25°C/W AF002C1-39 AF002C4-39

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com 3 Specifications subject to change without notice.3/99A System B lock D iagram M obile Antenna Phone Antenna D iplexer LN A PA T/R Sw itch D isconnect C hangeover Sw itch From Transm itter To R eceiver T/R Sw itch T/R and Antenna Changeover Switch for Mobile Cellular Systems D S G LT (nH ) 10 kΩ C (pF) Antenna G D S TX VC TL R X λ/4 G aAs FET AF002C Series G aAs FET AF002C Series VCTL (V) TX to Antenna R X to Antenna

0 Low Loss High Isolation

-5 High Isolation Low Loss Truth Table for T/R Switch See next page for positive voltage operation. VCTL (V) Antenna -5 Connected

0 Isolated

Truth Table for Changeover Switch See next page for positive voltage operation. Part Number LT (nH) C T (pF) Freq.(GHz) AF002C1-39 165 18.8 0.45 AF002C4-39 85 18.8 0.45 AF002C1-39 44 4.7 0.90 AF002C4-39 22 4.7 0.90 Component Values for T/R Switch Circuit Antenna C T D S G To T/R Sw itch VC TL Changeover Switch SchematicT/R Switch Schematic

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 4 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.3/99A S D G RF Path Shunt -5 Insertion Loss GND RF

0 Isolation

0 Insertion Loss

-5 Isolation Truth Table Negative Voltage Operation Positive Voltage Operation S D G RF Path Shunt C BL - C hose value for low est im pedance at desired operating frequency. G (0, VH igh) D S2 1 Shunt C onfiguration C T VS 10 kΩ G (0, VH igh) D S2 1 Series C onfiguration C BLC BL VS 10 kΩ R F R FR F R F LT Positive Voltage Operation D R AIN (D ) SO U R C E (S) G ATE (G ) Pin Out VHigh = +5 to +9 V (VS = VHigh ± 0.2 V).