KI016N KEXIN | Alldatasheet
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www.kexin.com.cn 1 MOSFET Ƶ Features ƽ VDS (V)= 18V ƽ ID = 6.0 A (VGS =4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 27m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G S D Ƶ Absolute Maximum Ratings Ta = 25ć Symbol 5 sec Steady State Unit VDS VGS Ta=25ć 6.0 4.67 Ta=70ć 4.8 3.7 IDM Avalanche Current *2 I AS Single Avalanche Energy E AS mJ Ta=25ć 1.25 0.75 Ta=70ć 0.8 0.48 RthJF TJ Tstg W RthJA 100 166 ć/W ć Junction Temperature Parameter Continuous Drain Current *1 ID Drain-Source Voltage Gate-Source Voltage V Pulsed Drain Current *2 A L=0.1mH 11.25 Storage Temperature Range PDPower Dissipation *1 Thermal Resistance.Junction- to-Ambient *1 tİ5s e c Steady State Thermal Resistance.Junction-to-Foot 50 150 -55 to 150 *1 Surface Mounted on 1” x 1” FR4 Board. *2 Pulse width limited by maximum junction temperature 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 Unit: mmSOT-23-3 1.6 0.4 0.15+0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 TJ =150ć N-Channel MOSFET KI016N
www.kexin.com.cn2 MOSF ET Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250 A , VGS=0V 18 V VDS=18V, VGS 1V0= VDS=18V, VGS=0V, Ta=70 75 Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V ±100 nA VegatloVdlohserhTetaG GS(th) VDS=VGS , ID=250 A 0.45 0.85 V I1*tnerruCniarDetatS-nO D(on) VDS 10 V, VGS = 4.5 V 15 A VGS=4.5V, ID 22A0.5= VGS=2.5V, ID 72A5.4= VGS=1.8V, ID 43A0.4= Forward Transconductance *1 gFS VDS=15V, ID S04A0.5= QegrahCetaGlatoT g 11.2 14 QegrahCecruoSetaG gs 1.4 QegrahCniarDetaG gd 2.2 temiTyaleDnO-nruT d(on) 15 25 temiTesiRnO-nruT r 40 60 temiTyaleDffO-nruT d(off) 48 70 temiTllaFffO-nruT f 31 45 Body Diode Reverse Recovery Time trr IF= 1.0A, dI/dt= 100A/ s 13 25 Maximum Body-Diode Continuous Current IS 1.0 A VegatloVdrawroFedoiD SD IS=1.0A,VGS V2.1V0= RDS(On) m ID=1.0A, VDS=10V, ,VGEN=4.5V RL=10 ,RG=6 nC ns Zero Gate Voltage Drain Current IDSS A VGS=4.5V, VDS=10V, ID=5.0A Static Drain-Source On-Resistance *1 *1 Pulse test: PW 300us duty cycle 2%. Marking Marking AE9T N-Channel MOSFET KI016N
www.kexin.com.cn 3 MOSF ET Typical Characterisitics 0 1 2 3 4 VGS = 4.5 thru 2.0 V TC = 125 C -55 C 1.5 V 25 C scitsiretcarahCrefsnarTscitsiretcarahCtuptuO VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 1.0 V0.5 V - On-Resistance (rDS(on) ) 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 0.00 0.02 0.04 0.06 0.08 0.10 0 3 6 9 12 15 VDS - Drain-to-Source Voltage (V) Coss Ciss VDS = 10 V ID = 5.0 A ID - Drain Current (A) VGS = 4.5 V ID = 5.0 A VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) C - Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature ( C) (Normalized) - On-Resistance (rDS(on) ) VGS = 2.5 V VGS = 4.5 V Crss N-Channel MOSFET KI016N
www.kexin.com.cn4 MOSFET Ƶ Typical Characterisitics 0.00 0.05 0.10 0.15 0.20 02468 ID =5 . 0A 0.01 egatloVecruoS-ot-etaG.svecnatsiseR-nOegatloVdrawroFedoiDniarD-ecruoS - On-Resistance (rDS(on) ) VSD V)V(egatloVniarD-ot-ecruoS- GS - Gate-to-Source Voltage (V) - Source Current (A)I S 0.1 TJ =1 5 0C TJ =2 5C 0.01 100 6000.1 Single Pulse Power Time (sec) Power (W) -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 -50 -25 0 25 50 75 100 125 150 ID = 250 A Threshold Voltage Variance (V)VGS(th) TJ - Temperature (C) TA =2 5C 10-3 10-2 00601110-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA= 166 C/W 3. TJM -T A=P DMZthJA(t) Notes: 4. Surface Mounted PDM N-Channel MOSFET KI016N