ADRF5301 (Rev.0)

Document overview

  • Manufacturer or author: Analog Devices, Inc.
  • PDF pages: 10

Technical content

Silicon, SPDT Switch, 37 GHz to 49 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

FEATURES

►Reflective design ►Low insertion loss: 1.4 dB typical ►High isolation: 30 dB typical ►High input linearity: ►P0.1dB: 36 dBm ►Input IP3: 52 dBm ►High RF power handling ►28 dBm average ►36 dBm peak ►Single-supply operation: 3.3V ►Internal NVG ►RF settling time (0.1 dB final RF output): 50 ns ►20-terminal, 3 mm × 3 mm, land grid array (LGA) package

APPLICATIONS

►Industrial scanner ►Test instrumentation ►Cellular infrastructure mmWave 5G ►Military radios, radars, electronic counter measures (ECMs) ►Microwave radios and very small aperture terminals (VSATs) FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram dBm average and 36 dBm peak.

analog.com Rev. 0 | 2 of 10 Input Power Compression and Third-Order Recommendations for Printed Circuit Board

REVISION HISTORY

10/2022—Revision 0: Initial Version

Supply voltage (VDD) = 3.3 V, CTRL voltage (VCTRL) = 0 V or VDD, TCASE = +25°C, 50 Ω system, unless otherwise noted. Table 1. Electrical Characteristics 1 For power derating over frequency, see Figure 2. 2 For operation at +105°C, the power handling degrades from the TCASE = +85°C specification by 3 dB. See Figure 13 for the timing diagram. Table 2. Timing Specifications 1 A maximum of 10 dBm RF input power can be applied during the tPOWERUP wait time.

For recommended operating conditions, see Table 1. Table 3. Absolute Maximum Ratings ing conditions for extended periods may affect product reliability. Table 4. Thermal Resistance Figure 2. Power Derating vs. Frequency, TCASE = +85°C sitive devices in an ESD protected area only. Table 5. ADRF5301, 20-Terminal LGA damage may occur on devices subjected to high energy ESD. performance degradation or loss of functionality.

measured on the ADRF5301-EVALZ evaluation board.

registered trademarks are the property of their respective owners. One Analog Way, Wilmington, MA 01887-2356, U.S.A. Figure 18. 20-Terminal Land Grid Array [LGA] Table 8. Evaluation Boards