ADREF01

ADREF02 AD | Alldatasheet

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& DEVICES 10V + 5V References FEATURES ADREF01 FUNCTIONAL BLOCK DIAGRAM Replacement for industry Standard REFO1/REFO2 We i Laser Trimmed to High Accuracy: G 10.000V +30mV (REFO1) (A and E Grades) (6) vour ‘Trimmed Temperature Coefficient: 8.5ppm/°C max pe I ‘ (A and E Grades) (5) m0 ' Low Noise: 4uV p-p Typical Output Trim Capability ADREFO1 § Temperature Output Pin (REFO2) k Machine insertable Hermetic Cerdip Package RS @enoUND \\ NOTE: MAKE No CONNECTIONS TO i PINS 15,7 AND & : ADREF02 FUNCTIONAL BLOCK DIAGRAM A PRODUCT DESCRIPTION Va rep : Ha ‘The ADREFO1 and ADREFO2 are a 10V and SV reference, @ (3) E respectively, that utilize a buried Zener diode for minimal noise } and drift over temperature. The Zener diode provides a precise i 10.,0V (5.0V for REF02) output from an unregulated input [ ¥ | ADREFO2 3 voltage of 13.5V (10.8V for REF02) to 36V. Laser Wafer Trimming 38 | t (LWT) is used to trim both the initial error at +25°C as well as E the temperature coefficient. ov. E ‘The +10V output can be adjusted over a +3%, — 1% range coll E with minimal effect on device characteristics. The +5V output can also be adjusted over a +6%, —2% range with minimal © rim effect on device characteristics. The ADREFO1 and ADREFO2 offer good drift characteristics, low power consumption, and : good accuracy for applications requiring a low-cost reference. & These devices are recommended as references for 8-, 10- and maa & 12-bit D/A converters that require an external reference. They . f ate also ideal for all types of A/D converters with up to 12-bit NOTE: FARE NO CONVECTIONS TO THESE POINTS, } accuracy. A wee Rao opoenion fom 0 we tO aad the ADREPOW 5. The ADREFO2 provides a stable 5.000V output for input E ADREFO2 and ADREFO1A/ADREFO2A are specified for oper voltages between 10.8V and 36V. : ation between 55°C and +125°C. All grades are packaged ina 6. Laser Wafer Trimming reduces ADREFO2 initial offset error hermetic 8-pin cerdip package. - to 15mV (A and E grades). 4 7. Temperature out pin enables the ADREFO2 to be confi; PRODUCT HIGHLIGHTS as a tomperature uansducer eet 1, The ADREFOI is a second source equivalent to the industry ° : ; standard REFO1. 8. The buried Zener diode reference on both devices reduces . . noise to 4V p-p and improves temperature stability to : 2. The ADREFO1 provides a stable 10.000V output for input 8.SppmrC max (A and E grades). E voltages between 13.5V and 36V. ° ° : E a oe 9. Cerdip packaging provides hermeticity and machine inserta- ee 3. Laser Wafer Trimming reduces ADREFO) initial offset error bility at a low price for the devices, 6 to 30mV (A and E grades). 3 4, The ADREFO2 is a second source equivalent to the industry & standard REFO2. F Re E F VOLTAGE REFERENCES 8-75

SPECIFICATIONS 0,= +26 v= +157unes otterise sein T-58-O7 ADREFOIH ADREFOIE ADREFO1 ADREFOLA Model Min Typ Max |Min ‘Typ Max [Min Typ Max [Min Typ Max |Units Output Voltage Drift Oto +70°C *ppm°C =55°Cto + 125°C . : Gain Adjustment =1 -1 -1 =1 % i +3 +3 +3 +3 i Line Regulation (Tmint0 Trnus) i 135Vs +Viv=36V £yvv i ‘Load Regulation : Sourcing 0<Iour<10mA i Trin tO Trex 100 100 100 100 | +pV/mA Sinking - 10 <Ioyr<0mA . Tmmin tO Tmax 100 100 100 100 Power Dissipation ES i Output Noise ‘ 0.1Hzto 10Hz 4 AV ps \\ i Spectral Density, 100Hz 100 VATE | ong Temsciy a Short-Greut Cunentio Ground] 30 s0_| 30 50_| 30 50 | 30 _50_|ma

3 ShoreCircuitCurrent-toVms [| 305030 so | 30 so [3050 ma '

| Turn-On Settling Time | t 10.01% FS as t “Temperature Range t Specified Performance 0 +70 jo +70 |-55 +125 |-55 +125 |*c | NOTE : ‘Specifications subject to change without notice. e ‘Specificationsin boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing, E ‘quality levels, All niin and max specifications are guaranteed, although only those shown in boldface are tested on all production units, i t ABSOLUTE MAXIMUM RATINGS* (ADREFO1 and PIN CONFIGURATIONS ADREF02) . i Vm toGround 2... eee ee eee eee eee BV . k Power Dissipation (25°C)... -++ee+e+. + 500mW Package Thermal Resance : [2} soreroy 2 : Qe vresteresetertttsrrer ys ew ne [3] eee) LS] Your F ‘Output Protection: Output safe for indefinite short to ground eno [4] Bi 7 and momentary short to Viv. c NC = NO CONNECT L ‘Stresses above those listed under “Absolute Maximum Ratings” may b cause permanent damage to the device. This is a stress rating only and i functional operation of the device at these or any other conditions above Ne Cy fe] | those indicated in the operational sections of this specification is not Ne | 5 temp [3] (Notto Scale) [6 | Vour | eno [ | [5 | TRIM F NC = NO CONNECT 8-76 VOLTAGE REFERENCES b

i . SPECIFICATIONS (y= +25°C, Vo = + 15V unless otherwise spect) ADREFO1/ADREFO2 T-S58-07 ' ADREF02H ADREF02E ADREFO2 ADREFO2A { Model Min Typ Max |Min ‘Typ Max | Min Typ Max |Min Typ Max | Units i Output Voltage [4975___5.025 | 4.985 sors|4o7s -5.02s|4sss 5.015 |v i ‘Output Voltage Drift Oto +70°C ppm . =55°Cto +125°C Gain Adjustment -2 -2 -2 . -2 % : +6 +6 +6 +6 %. i Line Regulation (Tynint0 Trax) 10.8V < + Vin <36V £uVV

1 NAV < + Vin <36V

{ Sourcing 0<Iour<10mA f +25°C 100 100 100 100, | pVimA t TointO Ter 100 100 150 150 t Sinking —10<Iour<0mA } 425°C - 400 400 400 400 Quien Gare [a3 [23s | 23 | 23 _|wa i Power Dissipation | P i ‘Output Noise k 0,1Hzto 10Hz 4 4 4 Vp Spectral Density, 100Hz 100 100 100 nVAAG | Long-Term Stability Pos ts is ts ppmncoorir k Shor-CireieCurensioGround| 3050} 30s) [3059 _| 90 50 _|ma ‘Turn-On Settling Time be 100,01% FS. us E TemperatureVolugeOurput [630 | gan Tso gt mv ig ‘Temperature Voltage Output | Temperature Coefficient 21 mvrC. ‘Temperature Range Specified Performance 0 +70 0 +70 | -55 +125] -35 +125] v ‘Specifications subject to change without notice. FE ‘Specifications in boldface are tested on all production units at final electrical test. Results from those tests are used tocalculate outgoing iq ‘quality levels. All_min and max specifications are guaranteed, although only those shown in boldface are tested on all production units. ig s F ‘ORDERING GUIDE { Initial | Temp. Temp. F Error | Coefficient| Range | Package is Model my | ppm*C °c Option* if ADREFOIHQ/ADREF02HQ| 50/25 25 0t0 +70 Cerdip (Q-8) i ADREFOIEQ/ADREFO2EQ | 30/15 8.5 Oto +70 Cerdip (Q-8) i ADREFOIQ/ADREFO2Q =| 50/25 25 —55to +125 | Cerdip(Q-8) . i : ADREFOIAQ/ADREFO02AQ | 30/15 85 | -55t0 +125} Cerdip(Q-8) i “*Sce Section 14 for package outline information. . fe . f t ij t ¥ VOLTAGE REFERENCES 8-77

. ——EE Tacunr UF OPERATION Figure 2 shows the typical output voltage drift for the ADREFO1E i ‘The ADREFO! and ADREFO2 consist of a proprietary buried and ADREFOZE and illustrates the test methodology, The box Zener diode reference, an output buffer amplifier, and several in Figure 2 is bounded on the sides by the operating temperature high stability thin-film resistors. This design provides an accurate _ extremes, and on the top and the bottom by the maximum and 10V reference with initial offset of 30mV or less, or an accurate ‘minimum output voltages measured over the operating tempera SV reference with initial offset of 1SmV or less, and a temperature ture range. The slope of the diagonal drawn from the lower left coefficient of 8.5ppm/°C (A and E grades). to the upper right comer of the box determines the performance le of the device. : LOAD REGULATION oad T-S8-01 { The ADREFO1 and ADREFO2 have excellent load regulation i characteristics, Figure 1 shows that varying the load several mA Toe To store . i changes the output by only afew pV. The ADREFO2 hassomewhat —_10.240(8.020) t Hi i better load regulation performance sourcing current than sinking Tear i current. . # f nt ce [ono Von AVour (HV) i 1 ' 1 5 1000 ‘ADREFOt 1 Hl t 10.000 (5.000) } 1 f 00 -20 ° 20 o o * le $2. +4 46 48 +19 LOADImA) TEMPERATURE —-e i [ 6 -4 -2 2 500 SLOPE Tem re aa is 1000 wie fe JOFORREFOX E Sronnaron } Figure 2. Typical ADREFO1E/ADREFOZE Temperature Drift E 4V¥our (HV) E Each E and H grade unit is tested at 0, +25°C and +70°C. E Each ADREFOI/ADREFO2 & A grade unit is tested at ~55°C, i 1000 ‘ADREFO2 +25°C and + 125°C, This approach ensures that the variations F of output voltage that occur as the temperature changes within 3 00 the specified range will be contained within a box whose diagonal e $2 +4 +6 +4 +10 LOAD (ma) has a slope equal to the maximum specified drift. The position e we -4 2 of the box on the vertical scale will change from device to device ‘ 500 as initial error and the shape of the curve vary. The maximum £ 00 height of the box for the appropriate temperature range and ie device grade is shown in Figure 3. Duplication of these results t requires a combination of high accuracy and stable temperature i control in a test system. Evaluation of the ADREFO1 or ADREFO2 E will produce a curve similar to that in Figure 3, but output - ‘3 readings may vary depending on the test methods and equipment ia Figure 1. Typical Load Regulation Characteristics utilized. ib ‘TEMPERATURE PERFORMANCE : z ‘The ADREFOI and ADREFO2 are designed for reference appli- pace MMO CHANGE E. cations where good temperature performance is needed. Tem- OTO+70°C | —55°CTO +125°C fe perature testing ensures that the device’s high level of performance ADREFOIHIOZH | 67.5/8.75 3 is maintained over the operating temperature range. ADREFOTE/02E | 36/298 E Some confusion exists in the area of defining and specifying Psy a eer E reference voltage error over temperature, Historically, references ha hharacterized using a maximum deviation per de; . J Eien ies sear However, because of nonlinearities in Figure 3. Maximum Output Change in mV 4 temperature characteristics which originated in standard Zener . references (such as ‘$” type characteristics), most manufacturers : have begun to use a maximum limit error band approach to : specify devices. This technique involves the measurement of the | 4 output at three or more different temperatures to specify an is output voltage error band. | E . | F E 8-78 VOLTAGE REFERENCES

| ADREFO1/ADREFO2 APPLYING THE ADREF01 AND ADREF02 +35V> 426V ‘The ADREFO1 is simple to use in virtually all reference appli- 7-5. 2 -O7 cations. When power is applied to Pin 2 and Pin 4 is grounded, @) i Pin 6 provides a 10V output. No external components are required; Ver the degree of desired absolute accuracy is achieved simply by selecting the required device grade. The ADREFOI requires less Vour (6) . than 4mA quiescent current from an operating supply of +15V. - ADREFOt = ‘The ADREFO2 requires less than 3mA quiescent current from ‘an operating supply of + 12V or +15V. Gnp . ‘An external fine trim may be desired to set the output level to (4) i exactly 10,000V or 5,000V when using ADREFO2 (calibrated to wh Livy F a main system reference). System calibration may also require a tnF r i reference voltage that is slightly different from 10.000V, for = ‘. y ; example, 10.24V for binary applications in the REFO1 or 5.12V = 2.5mA < FY ~1, <10mA i in the REFO2. In either case, the optional trim circuit shown in -18v ' Figure 4 can offset the output by as much as 300mV, if desired, . with minimal effect on other device characteristics. Figure 5. Negative 10V Reference ' Ve NEGATIVE REFERENCE VOLTAGE FROM AN : 9 ADREF02 i ‘The ADREFO2 can be used to provide a —5.000V output as i (2) shown in Figure 6, The Vany pin is tied to at least a +6V supply, . Va the output pin is grounded, and the ADREFO2 ground pin is if connected through a 4k resistor to a — 15V supply. The -5V b ADREFST. Vo ()-0 0 OUTPUT output is now taken from the ground pin (Pin 4) instead of ADREFO2 Vour: It is essential to arrange the output load and the supply trim (6:)—o-0$ 10K. resistor Rg so that the net current through the ADREF02 is less i than SmA. The temperature characteristics and long-term stability GND of the device will be essentially the same as that of a unit used G) in the standard +5V output configuration. i +6V +30V ; Ot @ t Figure 4, Optional Fine Trim Configuration ‘ E NEGATIVE REFERENCE VOLTAGE FROM AN Vour (6) E ADREFOL ADREFO2 - : ‘The ADREFOI can be used to provide a —10.000V output as F shown in Figure 5. The Vyy pin is tied to at least 2 +3.5V GND E supply, the output pin is grounded, and the ADREFO1 ground. (a) F pin is connected through a resistor, Rs, to a — 15V supply, The ie —10V output is now taken from the ground pin (Pin 4) instead ~v fF of Vour- It is essential to arrange the output load and the supply ida ad Rs j resistor Rg so that the net current through the ADREFO is = aka 3 between 2.5mA and 10mA. The temperature characteristics and ov F long-term stability of the device will be essentially the same as e that of a unit used in the standard + 10V output configuration. Figure 6. Negative 5V Reference F gE t t } . VOLTAGE REFERENCES 8-79

SV OR 10V REFERENCE WITH MULTIPLYING CMOS " TEMPERATURE TRANSDUCER “T-SG~O7 D/A OR A/D CONVERTERS ‘The temperature out pin of the ADREFO2 allows it to be used . ‘The ADREFO2 is ideal for applications with 10- and 12-bit as a temperature transducer. The output of Pin 3 (TEMP) is a H multiplying CMOS D/A converters. In the standard hook-up, 8s voltage that varies linearly with temperature. Vremp at 25°C is shown in Figure 7, the ADREF02 is paired with the AD7533 630mV, and the temperature coefficient is 2.1mV/°C, In the H 10-bit multiplying DAC and the AD711 high-speed BIFET op configuration shown in Figure 9, Vour from Pin 6 of the ADREF02 t amp. The amplifier/DAC configuration produces a unipolar 0 to —_provides a stable reference voltage for the AD OP-07 op amp. ‘—5V output range. Bipolar output applications and other operating ‘The temperature dependent voltage from the TEMP pin of the details can be found on the AD7533 data sheet. The ADREFO1 ADREFO2 is amplified by the AD OP-07 to provide a wider t ‘can also be used in this configuration to produce a unipolar 0 to. full-scale range and more current sourcing capability, i = 10V output range. t +8y Be Be Re i . ee +4 Vou * (afc +f +1) vine ~ FE Vo t +0 my @ i — wy, ve @ Nee "® 7 ve anQ+@- O Yer ADREFOZ [ | i a On pe ee SP ea an INI pie a en @—oF ean or [| |] [AD OP-07 X6) 0 Vour t St = 4S ke tew @ O+@ F partbeo -v ND é E : G) 4 tv 3 Figure 7. Low-Cost 10-Bit CMOS DAC Application ; E ¥ h CURRENT SOURCE

3 The design of the ADREFO1 allows it to be easily configured as [TEMPERATURE | Vour—|

® a current source. The voltage drop from Pin 2 to Pin 4 in Figure | vthe | atin e 8 must remain between 13.5V and 36V. There will be a constant r 10V drop across Ro. By choosing control resistor Rc you can £ vary the load current from the quiescent current (2mA typically) Figure 9, Temperature Transducer E to approximately 10mA. t ‘The resistor values in Figure 9 produce an output (Vour) that & ay, varies 10mV/°C from —0.55V to +1.25V over the military ‘ E ‘a temperature range. The potentiometer Ry controls the offset of : E @) the transfer function, and the potentiometer Rgp controls its i E v slope. The equation in Figure 9 can be used to set resistor values f ~ for other output ranges. f o = 10 ; ADREFO Your(6)-—~p a RY + tans

3 GND

F ©) t . is i Figure 8. Current Source i In the case of the ADREF02, the voltage drop across Pin 2 to & Pin 4 from Figure 8 must remain between 8V and 36V. There ‘ vill beg constant SV drop across Re (5000 minimum) @ . bot La Rot ie g : E | ig is | E | E 8-80 VOLTAGE REFERENCES