ADR431ARM-REEL7

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ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 2 of 24 TABLE OF CONTENTS Reference for Converters in Optical Network Control Negative Precision Reference without Precision Resistors... 16

REVISION HISTORY

9/04—Data Sheet Changed from Rev. A to Rev. B 6/04—Data Sheet Changed from Rev. 0 to Rev. A 12/03—Revision 0: Initial Version

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 3 of 24 SPECIFICATIONS ADR430 ELECTRICAL CHARACTERISTICS VIN = 4.1 V to 18 V , ILOAD = 0 mA, TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 2.047 2.048 2.049 V A Grade VO 2.045 2.048 2.051 V Initial Accuracy B Grade VOERR 1 m V B Grade VOERR 0.05 % A Grade VOERR 3 m V A Grade VOERR 0.15 % Temperature Coefficient SOIC-8 (B Grade) TCVO −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) TCVO −40°C < TA < +125°C 2 10 MSOP-8 TCVO −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 4.1 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 5.0 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 5 . 0 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 560 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p Voltage Noise Density eN 1 kHz 60 nV√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz –70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 4.1 18 V Supply Voltage Headroom VIN − VO 2 V 1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 4 of 24 ADR431 ELECTRICAL CHARACTERISTICS VIN = 4.5 V to 18 V , ILOAD = 0 mA, TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 2.499 2.500 2.501 V A Grade VO 2.497 2.500 2.503 V Initial Accuracy B Grade VOERR 1 m V B Grade VOERR 0.04 % A Grade VOERR 3 m V A Grade VOERR 0.13 % Temperature Coefficient SOIC-8 (B Grade) TCVO −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) TCVO −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 TCVO −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 4.5 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 5.0 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 5.0 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 580 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p Voltage Noise Density eN 1 kHz 80 nV√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 4.5 18 V Supply Voltage Headroom VIN – VO 2 V 1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 5 of 24 ADR433 ELECTRICAL CHARACTERISTICS VIN = 5 V to 18 V , ILOAD = 0 mA , TA = 25°C, unless otherwise noted. Table 4. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 2.9985 3.000 3.0015 V A Grade VO 2.996 3.000 3.004 V Initial Accuracy B Grade VOERR 1.5 mV B Grade VOERR 0.05 % A Grade VOERR 4 mV A Grade VOERR 0.13 % Temperature Coefficient TCVO SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 5 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 6 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 6 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 590 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 3.75 µV p-p Voltage Noise Density eN 1 kHz 90 nV√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 5 18 V Supply Voltage Headroom VIN − VO 2 V 1The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 6 of 24 ADR434 ELECTRICAL CHARACTERISTICS VIN = 6.1 V to 18 V , ILOAD = 0 mA, TA = 25°C, unless otherwise noted. Table 5. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 4.0945 4.096 4.0975 V A Grade VO 4.091 4.096 4.101 V Initial Accuracy B Grade VOERR 1.5 mV B Grade VOERR 0.04 % A Grade VOERR 5 mV A Grade VOERR 0.13 % Temperature Coefficient TCVO SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 6.1 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 7 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 7 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 595 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 6.25 µV p-p Voltage Noise Density eN 1 kHz 100 nV√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 6.1 18 V Supply Voltage Headroom VIN − VO 2 V 1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 7 of 24 ADR435 ELECTRICAL CHARACTERISTICS VIN = 7 V to 18 V , ILOAD = 0 mA, TA = 25°C, unless otherwise noted. Table 6. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 4.998 5.000 5.002 V A Grade VO 4.994 5.000 5.006 V Initial Accuracy B Grade VOERR 2 m V B Grade VOERR 0.04 % A Grade VOERR 6 m V A Grade VOERR 0.12 % Temperature Coefficient TCVO SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 7 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 8 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 8 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 620 800 µA Voltage Noise eN p-p 0.1 Hz to 10 Hz 8 µV p-p Voltage Noise Density eN 1 kHz 115 nV/√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 7 18 V Supply Voltage Headroom VIN − VO 2 V 1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 8 of 24 ADR439 ELECTRICAL CHARACTERISTICS VIN = 6.5 V to 18 V , ILOAD = 0 mV , TA = 25°C, unless otherwise noted. Table 7. Parameter Symbol Conditions Min Typ Max Unit Output Voltage B Grade VO 4.498 4.500 4.502 V A Grade VO 4.4946 4.500 4.5054 V Initial Accuracy B Grade VOERR 2 m V B Grade VOERR 0.04 % A Grade VOERR 5.4 mV A Grade VOERR 0.12 % Temperature Coefficient TCVO SOIC-8 (B Grade) −40°C < TA < +125°C 1 3 ppm/°C SOIC-8 (A Grade) −40°C < TA < +125°C 2 10 ppm/°C MSOP-8 −40°C < TA < +125°C 2 10 ppm/°C Line Regulation ∆VO/∆VIN VIN = 6.5 V to 18 V −40°C < TA < +125°C 5 20 ppm/V Load Regulation ∆VO/∆ILOAD ILOAD = 0 mA to 10 mA, VIN = 6.5 V −40°C < TA < +125°C 15 ppm/mA ILOAD = −10 mA to 0 mA, VIN = 6 . 5 V −40°C < TA < +125°C 15 ppm/mA Quiescent Current IIN No load, −40°C < TA < +125°C 600 800 µA Voltage Noise eN p-p 0.1 Hz to 10.0 Hz 7.5 µV p-p Voltage Noise Density eN 1 kHz 110 nV/√Hz Turn-On Settling Time tR CIN = 0 10 µs Long-Term Stability1 ∆VO 1,000 h 40 ppm Output Voltage Hysteresis VO_HYS 20 ppm Ripple Rejection Ratio RRR fIN = 10 kHz −70 dB Short Circuit to GND ISC 40 mA Supply Voltage Operating Range VIN 6.5 18 V Supply Voltage Headroom VIN − VO 2 V 1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 9 of 24 ABSOLUTE MAXIMUM RATINGS @ 25°C, unless otherwise noted. Table 8. Parameter Rating Supply Voltage 20 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range (R, RM Packages) −65°C to +125°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature Range (Soldering, 60 s) 300°C PACKAGE TYPE Table 9. Package Type θJA1 θJC Unit 8-Lead SOIC (R) 130 43 °C/W 8-Lead MSOP (RM) 190 °C/W 1 θJA is specified for worst-case conditions (device soldered in circuit board for surface-mount packages). Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Absolute maximum ratings apply individually only, not in combination. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Default conditions: ±5 V, CL = 5 pF, G = 2, Rg = Rf = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, Frequency = 1 MHz, TA = 25°C.

2.4995 OUTPUT VOLTAGE (V)

Figure 3. ADR431 VOUT vs. Temperature Figure 4. ADR434 VOUT vs. Temperature Figure 5. ADR435 VOUT vs. Temperature Figure 6. ADR435 Supply Current vs. Input Voltage Figure 7. ADR435 Supply Current vs. Temperature Figure 8. ADR431 Supply Current vs. Input Voltage

0.65 BSC

1.10 MAX

Figure 42. 8-Lead Mini Small Outline Package [MSOP] Figure 43. 8-Lead Standard Small Outline Package [SOIC]

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 21 of 24 ORDERING GUIDE Initial Accuracy Model Output Voltage (V O) mV (%) Temperature Coefficient Package (ppm/°C) Package

Description

ADR430AR 2.048 3 0.15 10 8-lead SOIC N/A –40°C to +125°C ADR430AR-REEL7 2.048 3 0.15 10 8-Lead SOIC 3,000 –40°C to +125°C ADR430ARM 2.048 3 0.15 10 8-Lead MSOP N/A RHA –40°C to +125°C ADR430ARM-REEL7 2.048 3 0.15 10 8-Lead MSOP 1,000 RHA –40°C to +125°C ADR430BR 2.048 1 0.05 3 8-lead SOIC N/A –40°C to +125°C ADR430BR-REEL7 2.048 1 0.05 3 8-Lead SOIC 3,000 –40°C to +125°C ADR431AR 2.500 3 0.12 10 8-Lead SOIC N/A –40°C to +125°C ADR431AR-REEL7 2.500 3 0.12 10 8-Lead SOIC 3,000 –40°C to +125°C ADR431ARM 2.500 3 0.12 10 8-Lead MSOP N/A RJA –40°C to +125°C ADR431ARM-REEL7 2.500 3 0.12 10 8-Lead MSOP 1,000 RJA –40°C to +125°C ADR431BR 2.500 1 0.04 3 8-Lead SOIC N/A –40°C to +125°C ADR431BR-REEL7 2.500 1 0.04 3 8-Lead SOIC 3,000 –40°C to +125°C ADR433AR 3.000 4 0.12 10 8-Lead SOIC N/A –40°C to +125°C ADR433AR-REEL7 3.000 4 0.12 10 8-Lead SOIC 3,000 –40°C to +125°C ADR433ARM 3.000 4 0.12 10 8-Lead MSOP N/A RKA –40°C to +125°C ADR433ARM-REEL7 3.000 4 0.12 10 8-Lead MSOP 1,000 RKA –40°C to +125°C ADR433BR 3.000 1.5 0.05 3 8-Lead SOIC N/A –40°C to +125°C ADR433BR-REEL7 3.000 1.5 0.05 3 8-Lead SOIC 3,000 –40°C to +125°C ADR434AR 4.096 5 0.13 10 8-Lead SOIC N/A –40°C to +125°C ADR434AR-REEL7 4.096 5 0.13 10 8-Lead SOIC 3,000 –40°C to +125°C ADR434ARM 4.096 5 0.13 10 8-Lead MSOP N/A RLA –40°C to +125°C ADR434ARM-REEL7 4.096 5 0.13 10 8-Lead MSOP 1,000 RLA –40°C to +125°C ADR434BR 4.096 1.5 0.04 3 8-Lead SOIC N/A –40°C to +125°C ADR434BR-REEL7 4.096 1.5 0.04 3 8-Lead SOIC 3,000 –40°C to +125°C ADR435AR 5.000 6 0.12 10 8-Lead SOIC N/A –40°C to +125°C ADR435AR-REEL7 5.000 6 0.12 10 8-Lead SOIC 3,000 –40°C to +125°C ADR435ARM 5.000 6 0.12 10 8-Lead MSOP N/A RMA –40°C to +125°C ADR435ARM-REEL7 5.000 6 0.12 10 8-Lead MSOP 1,000 RMA –40°C to +125°C ADR435BR 5.000 2 0.04 3 8-Lead SOIC N/A –40°C to +125°C ADR435BR-REEL7 5.000 2 0.04 3 8-Lead SOIC 3,000 –40°C to +125°C ADR439AR 4.500 5.4 0.12 10 8-Lead SOIC N/A –40°C to +125°C ADR439AR-REEL7 4.500 5.4 0.12 10 8-Lead SOIC 3,000 –40°C to +125°C ADR439ARM 4.500 5.4 0.12 10 8-Lead MSOP N/A RNA –40°C to +125°C ADR439ARM-REEL7 4.500 5.4 0.12 10 8-Lead MSOP 1,000 RNA –40°C to +125°C ADR439BR 4.500 2 0.04 3 8-Lead SOIC N/A –40°C to +125°C ADR439BR-REEL7 4.500 2 0.04 3 8-Lead SOIC 3,000 –40°C to +125°C

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 22 of 24 NOTES

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 23 of 24 NOTES

ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. B | Page 24 of 24 NOTES © 2004 Analo g De vices, Inc. All rights reserve d. Tra demarks and registered tra demarks are the prop erty of their respective owners . D04500–0–9/04(B)