ADR430

ADR430/ADR431/ADR433/ADR434/ADR435 (Rev. N)

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• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 23

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ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet Rev. N | Page 2 of 23 TABLE OF CONTENTS Reference for Converters in Optical Network Control

REVISION HISTORY

2/2018—Rev. M to Rev. N Changed VO to VOUT and ADR43x to ADR430/ADR431/ Changes to Figure 1, Figure 2, and General Description Changes to Output Current Capacity Parameter and Trim Changes to Output Current Capacity Parameter and Trim Changes to Output Current Capacity Parameter and Trim Changes to Output Current Capacity Parameter and Trim Changes to Output Current Capacity Parameter and Trim Added Pin Configuration and Function Descriptions Section, Changes to Theory of Operation Section, Figure 32, Noise Changes to Figure 33 Caption, Figure 34, and Turn-On Settling Changes to Reference for Converters in Optical Network Control Circuits Section and Programmable Current Source Changes to Table 10 and Precision Boosted Output Regulator 6/2015—Rev. L to Rev. M 7/2014—Rev. K to Rev. L Changes to Default Conditions, Typical Performance 5/2014—Rev. J to Rev. K 7/2011—Rev. I to Rev. J 5/2011—Rev. H to Rev. I

Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 Rev. N | Page 3 of 23 Deleted Negative Precision Reference Without Precision 2/2011—Rev. G to Rev. H 7/2010—Rev. F to Rev. G 6/2010—Rev. E to Rev. F 1/2009—Rev. D to Re v. E Added High Frequency Noise Section and Equation 3; Inserted Figure 31, Figure 32, and Figure 33; Renumbered 12/2007—Rev. C to Rev. D Changes to Initial Accuracy and Ripple Rejection Ratio 8/2006—Rev. B to Rev. C 9/2004—Rev. A to Rev. B 6/2004—Rev. 0 to Rev. A 12/2003—Revision 0: Initial Version

ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet Rev. N | Page 4 of 23 SPECIFICATIONS ADR430 ELECTRICAL CHARACTERISTICS VIN = 4.1 V to 18 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit OUTPUT VOLTAGE VOUT A Grade 2.045 2.048 2.051 V B Grade 2.047 2.048 2.049 V INITIAL ACCURACY1 VOERR A Grade ±3 mV ±0.15 % B Grade ±1 mV ±0.05 % TEMPERATURE COEFFICIENT TCVOUT A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VOUT/∆VIN VIN = 4.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VOUT/∆IL IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing 30 mA Sinking −20 mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 560 800 µA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p VOLTAGE NOISE DENSITY eN 1 kHz 60 nV/√Hz TURN-ON SETTLING TIME tR CL = 0 µF 10 µs LONG-TERM STABILITY2 ∆VOUT 1000 hours 40 ppm OUTPUT VOLTAGE HYSTERESIS VOUT_HYS 20 ppm RIPPLE REJECTION RATIO RRR fIN = 1 kHz –70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 4.1 18 V SUPPLY VOLTAGE HEADROOM VIN − VOUT 2 V TRIM RANGE −5 +5 % 1 Initial accuracy does not include shift due to solder heat effect. 2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 Rev. N | Page 5 of 23 ADR431 ELECTRICAL CHARACTERISTICS VIN = 4.5 V to 18 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit OUTPUT VOLTAGE VOUT A Grade 2.497 2.500 2.503 V B Grade 2.499 2.500 2.501 V INITIAL ACCURACY1 VOERR A Grade ±3 mV ±0.12 % B Grade ±1 mV ±0.04 % TEMPERATURE COEFFICIENT TCVOUT A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VOUT/∆VIN VIN = 4.5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VOUT/∆IL IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing 30 mA Sinking −20 mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 580 800 µA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 µV p-p VOLTAGE NOISE DENSITY eN 1 kHz 80 nV/√Hz TURN-ON SETTLING TIME tR CL = 0 µF 10 µs LONG-TERM STABILITY2 ∆VOUT 1000 hours 40 ppm OUTPUT VOLTAGE HYSTERESIS VOUT_HYS 20 ppm RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 4.5 18 V SUPPLY VOLTAGE HEADROOM VIN − VOUT 2 V TRIM RANGE −5 +5 % 1 Initial accuracy does not include shift due to solder heat effect. 2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet Rev. N | Page 6 of 23 ADR433 ELECTRICAL CHARACTERISTICS VIN = 5.0 V to 18 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 4. Parameter Symbol Test Conditions/Comments Min Typ Max Unit OUTPUT VOLTAGE VOUT A Grade 2.996 3.000 3.004 V B Grade 2.9985 3.000 3.0015 V INITIAL ACCURACY1 VOERR A Grade ±4 mV ±0.13 % B Grade ±1.5 mV ±0.05 % TEMPERATURE COEFFICIENT TCVOUT A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VOUT/∆VIN VIN = 5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VOUT/∆IL IL = 0 mA to 10 mA, VIN = 6 V, −40°C < TA < +125°C 15 ppm/mA IL = −10 mA to 0 mA, VIN = 6 V, −40°C < TA < +125°C 15 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing 30 mA Sinking −20 mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 590 800 µA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.75 µV p-p VOLTAGE NOISE DENSITY eN 1 kHz 90 nV/√Hz TURN-ON SETTLING TIME tR CL = 0 µF 10 µs LONG-TERM STABILITY2 ∆VOUT 1000 hours 40 ppm OUTPUT VOLTAGE HYSTERESIS VOUT_HYS 20 ppm RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 5.0 18 V SUPPLY VOLTAGE HEADROOM VIN − VOUT 2 V TRIM RANGE −5 +5 % 1 Initial accuracy does not include shift due to solder heat effect. 2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 Rev. N | Page 7 of 23 ADR434 ELECTRICAL CHARACTERISTICS VIN = 6.1 V to 18 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 5. Parameter Symbol Test Conditions/Comments Min Typ Max Unit OUTPUT VOLTAGE VOUT A Grade 4.091 4.096 4.101 V B Grade 4.0945 4.096 4.0975 V INITIAL ACCURACY1 VOERR A Grade ±5 mV ±0.12 % B Grade ±1.5 mV ±0.04 % TEMPERATURE COEFFICIENT TCVOUT A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VOUT/∆VIN VIN = 6.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VOUT/∆IL IL = 0 mA to 10 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA IL = −10 mA to 0 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing 30 mA Sinking −20 mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 595 800 µA VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 6.25 µV p-p VOLTAGE NOISE DENSITY eN 1 kHz 100 nV/√Hz TURN-ON SETTLING TIME tR CL = 0 µF 10 µs LONG-TERM STABILITY2 ∆VOUT 1000 hours 40 ppm OUTPUT VOLTAGE HYSTERESIS VOUT_HYS 20 ppm RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 6.1 18 V SUPPLY VOLTAGE HEADROOM VIN − VOUT 2 V TRIM RANGE −5 +5 % 1 Initial accuracy does not include shift due to solder heat effect. 2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet Rev. N | Page 8 of 23 ADR435 ELECTRICAL CHARACTERISTICS VIN = 7.0 V to 18 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 6. Parameter Symbol Test Conditions/Comments Min Typ Max Unit OUTPUT VOLTAGE VOUT A Grade 4.994 5.000 5.006 V B Grade 4.998 5.000 5.002 V INITIAL ACCURACY1 VOERR A Grade ±6 mV ±0.12 % B Grade ±2 mV ±0.04 % TEMPERATURE COEFFICIENT TCVOUT A Grade −40°C < TA < +125°C 2 10 ppm/°C B Grade −40°C < TA < +125°C 1 3 ppm/°C LINE REGULATION ∆VOUT/∆VIN VIN = 7 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V LOAD REGULATION ∆VOUT/∆IL IL = 0 mA to 10 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA IL = −10 mA to 0 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing 30 mA Sinking −20 mA QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 620 800 µA VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 8 µV p-p VOLTAGE NOISE DENSITY eN 1 kHz 115 nV/√Hz TURN-ON SETTLING TIME tR CL = 0 µF 10 µs LONG-TERM STABILITY2 ∆VOUT 1000 hours 40 ppm OUTPUT VOLTAGE HYSTERESIS VOUT_HYS 20 ppm RIPPLE REJECTION RATIO RRR fIN = 1 kHz −70 dB SHORT CIRCUIT TO GND ISC 40 mA SUPPLY VOLTAGE OPERATING RANGE VIN 7.0 18 V SUPPLY VOLTAGE HEADROOM VIN − VOUT 2 V TRIM RANGE −5 +5 % 1 Initial accuracy does not include shift due to solder heat effect. 2 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.

TA = 25°C, unless otherwise noted. soldered in a circuit board for surface-mount packages. Table 8. Thermal Resistance

Default conditions: VIN = 7 V, TA = 25°C, CIN = COUT = 0.1 μF, unless otherwise noted.

2.4995 OUTPUT VOLTAGE (V)

Figure 5. ADR431 Output Voltage vs. Temperature Figure 6. ADR434 Output Voltage vs. Temperature Figure 7. ADR435 Output Voltage vs. Temperature Figure 8. ADR435 Supply Current vs. Input Voltage Figure 9. ADR435 Supply Current vs. Temperature Figure 10. ADR431 Supply Current vs. Input Voltage

output to enhance the transient response. Figure 45. Precision Boosted Output Regulator

0.65 BSC

1.10 MAX

Figure 46. 8-Lead Mini Small Outline Package [MSOP] REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 47. 8-Lead Standard Small Outline Package [SOIC_N]

Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 Rev. N | Page 23 of 23 ORDERING GUIDE Model1 Output Voltage (V) Initial Accuracy, Temperature Coefficient Package (ppm/°C) Temperature Range Package

Description

g Code (mV) (%) ADR430ARZ 2.048 ±3 ±0.15 10 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR430ARZ-REEL7 2.048 ±3 ±0.15 10 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR430ARMZ 2.048 ±3 ±0.15 10 −40°C to +125°C 8-Lead MSOP RM-8 50 R10 ADR430ARMZ-REEL7 2.048 ±3 ±0.15 10 −40°C to +125°C 8-Lead MSOP RM-8 1,000 R10 ADR430BRZ 2.048 ±1 ±0.05 3 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR430BRZ-REEL7 2.048 ±1 ±0.05 3 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR431ARZ 2.500 ±3 ±0.12 10 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR431ARZ-REEL7 2.500 ±3 ±0.12 10 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR431ARMZ 2.500 ±3 ±0.12 10 −40°C to +125°C 8-Lead MSOP RM-8 50 R12 ADR431ARMZ-REEL7 2.500 ±3 ±0.12 10 −40°C to +125°C 8-Lead MSOP RM-8 1,000 R12 ADR431BRMZ 2.500 ±1 ±0.04 3 −40°C to +125°C 8-Lead MSOP RM-8 50 R13 ADR431BRMZ-R7 2.500 ±1 ±0.04 3 −40°C to +125°C 8-Lead MSOP RM-8 1000 R13 ADR431BRZ 2.500 ±1 ±0.04 3 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR431BRZ-REEL7 2.500 ±1 ±0.04 3 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR433ARZ 3.000 ±4 ±0.13 10 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR433ARZ-REEL7 3.000 ±4 ±0.13 10 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR433ARMZ 3.000 ±4 ±0.13 10 −40°C to +125°C 8-Lead MSOP RM-8 50 R14 ADR433ARMZ-REEL7 3.000 ±4 ±0.13 10 −40°C to +125°C 8-Lead MSOP RM-8 1,000 R14 ADR433BRZ 3.000 ±1.5 ±0.05 3 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR433BRZ-REEL7 3.000 ±1.5 ±0.05 3 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR434ARZ 4.096 ±5 ±0.12 10 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR434ARZ-REEL7 4.096 ±5 ±0.12 10 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR434ARMZ 4.096 ±5 ±0.12 10 −40°C to +125°C 8-Lead MSOP RM-8 50 R16 ADR434ARMZ-REEL7 4.096 ±5 ±0.12 10 −40°C to +125°C 8-Lead MSOP RM-8 1,000 R16 ADR434BRZ 4.096 ±1.5 ±0.04 3 −40°C to +125°C 8-Lead SOIC_N R-8 98 ADR434BRZ-REEL7 4.096 ±1.5 ±0.04 3 −40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR435ARZ 5.000 ±6 ±0.12 10 –40°C to +125°C 8-Lead SOIC_N R-8 98 ADR435ARZ-REEL7 5.000 ±6 ±0.12 10 –40°C to +125°C 8-Lead SOIC_N R-8 1,000 ADR435ARMZ 5.000 ±6 ±0.12 10 –40°C to +125°C 8-Lead MSOP RM-8 50 R18 ADR435ARMZ-REEL7 5.000 ±6 ±0.12 10 –40°C to +125°C 8-Lead MSOP RM-8 1,000 R18 ADR435BRMZ 5.000 ±2 ±0.04 3 –40°C to +125°C 8-Lead MSOP RM-8 50 R19 ADR435BRMZ-R7 5.000 ±2 ±0.04 3 –40°C to +125°C 8-Lead MSOP RM-8 1,000 R19 ADR435BRZ 5.000 ±2 ±0.04 3 –40°C to +125°C 8-Lead SOIC_N R-8 98 ADR435BRZ-REEL7 5.000 ±2 ±0.04 3 –40°C to +125°C 8-Lead SOIC_N R-8 1,000 1 Z = RoHS Compliant Part. ©2003–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04500-0-2/18(N)