ADR3425ARJZ-R2

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Micropower, High Accuracy Voltage References ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.

FEATURES

Initial accuracy: ±0.1% (maximum) Maximum temperature coefficient: 8 ppm/°C Operating temperature range: −40°C to +125°C Output current: +10 mA source/−3 mA sink Low quiescent current: 100 μA (maximum) Low dropout voltage: 250 mV at 2 mA Output noise (0.1 Hz to 10 Hz): <10 μV p-p at 1.2 V (typical) 6-lead SOT-23

APPLICATIONS

Precision data acquisition systems Industrial instrumentation Medical devices Battery-powered devices PIN CONFIGURATION GND FORCE 1 GND SENSE 2 ENABLE 3 VOUT FORCE6 VOUT SENSE5 VIN4 ADR34xx TOP VIEW (Not to Scale) 08440-001 Figure 1. 6-Lead SOT-23 Analog Devices, Inc., patented DigiTrim® technology. in critical signal processing systems. Table 1. Selection Guide Table 2. Voltage Reference Choices from Analog Devices

1.2 ADR3412

2.048 ADR360 REF191 ADR430

2.5 ADR3425 ADR291 ADR431 ADR03

3.0 ADR3430 REF193 ADR433 ADR06

3.3 ADR366

4.096 ADR3440 ADR292 ADR434

5.0 ADR3450 ADR293 ADR435 ADR02

10.0 ADR01

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 2 of 24 TABLE OF CONTENTS Absolute Maximum Ratings and Minimum Operating

REVISION HISTORY

6/10—Rev. A to Rev. B Added ADR3412 Electrical Characteristics Section Added ADR3420 Electrical Characteristics Section Added ADR3433 Electrical Characteristics Section and 4/10—Rev. 0 to Rev. A Added ADR3440 Electrical Characteristics Section and Changes to Negative Reference Section, Boosted Output 3/10—Revision 0: Initial Version

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 3 of 24 SPECIFICATIONS ADR3412 ELECTRICAL CHARACTERISTICS VIN = 2.3 V to 5.5 V , TA = 25°C, ILOAD = 0 mA, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 1.1988 1.2000 1.2012 V INITIAL ACCURACY VOERR ±0.1 % ±1.2 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 2.3 V to 5.5 V 7 50 ppm/V VIN = 2.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 160 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 14 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 7 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 2.8 V to 5.5 V 10 mA Sinking VIN = 2.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE > VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, −40°C ≤ TA ≤ +125°C 1 1.1 V IL = 2 mA, −40°C ≤ TA ≤ +125°C 1 1.15 V ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, −40°C ≤ TA ≤ +125°C 0.85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 8 μV p-p f = 10 Hz to 10 kHz 28 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 0.6 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 100 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 4 of 24 ADR3420 ELECTRICAL CHARACTERISTICS VIN = 2.3 V to 5.5 V , TA = 25°C, ILOAD = 0 mA, unless otherwise noted. Table 4. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2.0459 2.0480 2.0500 V INITIAL ACCURACY VOERR ±0.1 % ±2.048 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 2.3 V to 5.5 V 7 50 ppm/V VIN = 2.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 160 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 12 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 7 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 2.8 V to 5.5 V 10 mA Sinking VIN = 2.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE > VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, −40°C ≤ TA ≤ +125°C 100 250 mV IL = 2 mA, −40°C ≤ TA ≤ +125°C 150 300 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, −40°C ≤ TA ≤ +125°C 0.85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 15 μV p-p f = 10 Hz to 10 kHz 38 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 0.9 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 400 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 5 of 24 ADR3425 ELECTRICAL CHARACTERISTICS VIN = 2.7 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 5. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2.4975 2.500 2.5025 V INITIAL ACCURACY VOERR ± 0 . 1 % ± 2 . 5 m V TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 2.7 V to 5.5 V 5 50 ppm/V VIN = 2.7 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.0 V, −40°C ≤ TA ≤ +125°C 10 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 3.0 V, −40°C ≤ TA ≤ +125°C 10 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.0 V to 5.5 V 10 mA Sinking VIN = 3.0 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, TA = −40°C ≤ TA ≤ +125°C 1 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 18 μV p-p f = 10 Hz to 10 kHz 42 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 600 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 6 of 24 ADR3430 ELECTRICAL CHARACTERISTICS VIN = 3.2 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 6. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2.9970 3.0000 3.0030 V INITIAL ACCURACY VOERR ±0.1 % ±3.0 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 3.2 V to 5.5 V 5 50 ppm/V VIN = 3.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.5 V, −40°C ≤ TA ≤ +125°C 9 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 3.5 V, −40°C ≤ TA ≤ +125°C 10 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.5 V to 5.5 V 10 mA Sinking VIN = 3.5 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, TA = −40°C ≤ TA ≤ +125°C 0.85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 22 μV p-p f = 10 Hz to 10 kHz 45 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1.1 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 700 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 7 of 24 ADR3433 ELECTRICAL CHARACTERISTICS VIN = 3.5 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 7. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 3.2967 3.30 3.3033 V INITIAL ACCURACY VOERR ±0.1 % ±3.3 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 3.5 V to 5.5 V 5 50 ppm/V VIN = 3.5 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.8 V, −40°C ≤ TA ≤ +125°C 9 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 3.8 V, −40°C ≤ TA ≤ +125°C 10 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.8 V to 5.5 V 10 mA Sinking VIN = 3.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE > VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, −40°C ≤ TA ≤ +125°C 0.85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 25 μV p-p f = 10 Hz to 10 kHz 46 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1.2 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz -60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 750 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 8 of 24 ADR3440 ELECTRICAL CHARACTERISTICS VIN = 4.3 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 8. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 4.0919 4.0960 4.1000 V INITIAL ACCURACY VOERR ± 0 . 1 % ±4.096 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 4.3 V to 5.5 V 3 50 ppm/V VIN = 4.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 4.6 V, −40°C ≤ TA ≤ +125°C 6 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 4.6 V, −40°C ≤ TA ≤ +125°C 15 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 4.6 V to 5.5 V 10 mA Sinking VIN = 4.6 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, TA = −40°C ≤ TA ≤ +125°C 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 29 μV p-p f = 10 Hz to 10 kHz 53 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1.4 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 800 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 9 of 24 ADR3450 ELECTRICAL CHARACTERISTICS VIN = 5.2 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 9. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 4.9950 5.0000 5.0050 V INITIAL ACCURACY VOERR ± 0 . 1 % ± 5 . 0 m V TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ T A ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN V IN = 5.2 V to 5.5 V 3 50 ppm/V VIN = 5.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 5.5 V, −40°C ≤ TA ≤ +125°C 3 30 ppm/mA Sinking IL = 0 mA to −3 mA, VIN = 5.5 V, −40°C ≤ TA ≤ +125°C 19 50 ppm/mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 5.5 V 10 mA Sinking VIN = 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 VDO I L = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = V IN, TA = −40°C ≤ TA ≤ +125°C 1 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 35 μV p-p f = 10 Hz to 10 kHz 60 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1.5 μV/√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS T A = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −58 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 900 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Termin section. ology Terminology2 See the section. The part is placed through the temperature cycle in the order of temperatures shown.

TA = 25°C, unless otherwise noted. soldered in a circuit board for surface-mount packages. Table 11. Thermal Resistance

Figure 2. Pin Configuration Table 12. Pin Function Descriptions 3 ENABLE Enable Connection. Enables or disables the device. 4 V IN Input Voltage Connection.

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 18 of 24 TERMINOLOGY Dropout Voltage (VDO) Dropout voltage, sometimes referred to as supply voltage headroom or supply-output voltage differential, is defined as the minimum voltage differential between the input and output such that the output voltage is maintained to within 0.1% accuracy. V DO = (VIN − VOUT)min | IL = constant Because the dropout voltage depends upon the current passing through the device, it is always specified for a given load current. In series-mode devices, dropout voltage typically increases proportionally to load current (see Figure 8 and Figure 14). Temperature Coefficient (TCVOUT) The temperature coefficient relates the change in output voltage to the change in ambient temperature of the device, as normalized by the output voltage at 25°C. This parameter is expressed in ppm/°C and can be determined by the following equation: ] / [ 10 ) ( ) ( 1 3 2 3 2 13 2 1 C ppm T T T V T T T VT T T VTCV OUT OUTOUT OUT ×− × (1) where: V OUT(T) is the output voltage at Temperature T. T1 = −40°C. T2 = +25°C. T3 = +125°C. This three-point method ensures that TCVOUT accurately portrays the maximum difference between any of the three temperatures at which the output voltage of the part is measured. The TCV OUT for the ADR3412/ADR3425/ADR3430/ADR3433/ ADR3440/ADR3450 is guaranteed via statistical means. This is accomplished by recording output voltage data for a large number of units over temperature, computing TCVOUT for each individual device via Equation 1, then defining the maximum TCV OUT limits as the mean TCVOUT for all devices extended by six standard deviations (6σ). Thermally Induced Output Voltage Hysteresis (ΔVOUT_HYS) Thermally induced output voltage hysteresis represents the change in output voltage after the device is exposed to a specified temperature cycle. This is expressed as either a shift in voltage or a difference in ppm from the nominal output. TC OUTOUTHYS OUT V C VV __ ) 25 (− °=Δ [V] _ 10) 25 ( ) 25 ( ×° − °=Δ C V V C VV OUT TC OUTOUT HYS OUT [ppm] where: VOUT(25°C) is the output voltage at 25°C. VOUT_TC is the output voltage after temperature cycling. Long-T erm Stability (ΔVOUT_LTD) Long-term stability refers to the shift in output voltage at 50°C after 1000 hours of operation in a 50°C environment. Ambient temperature is kept at 50°C to ensure that the temperature chamber does not switch randomly between heating and cooling, which can cause instability over the 1000 hour measurement. This is also expressed as either a shift in voltage or a difference in ppm from the nominal output. ) ( ) (01_ t V t VV OUTOUTLTD OUT −=Δ [V] _ 10) ( ) ( ) (×−=Δ t V t V t VV OUT OUTOUT LTD OUT [ppm] where: VOUT(t0) is the VOUT at 50°C at Time 0. VOUT(t1) is the VOUT at 50°C after 1000 hours of operation at 50°C. Line Regulation Line regulation refers to the change in output voltage in response to a given change in input voltage and is expressed in percent per volt, ppm per volt, or μV per volt change in input voltage. This parameter accounts for the effects of self-heating. Load Regulation Load regulation refers to the change in output voltage in response to a given change in load current and is expressed in μV per mA, ppm per mA, or ohms of dc output resistance. This parameter accounts for the effects of self-heating. Solder Heat Resistance (SHR) Drift SHR drift refers to the permanent shift in output voltage induced by exposure to reflow soldering, expressed in units of ppm. This is caused by changes in the stress exhibited upon the die by the package materials when exposed to high tempera- tures. This effect is more pronounced in lead-free soldering processes due to higher reflow temperatures.

Figure 39. Block Diagram then added to the VBE voltage to compensate for its negative TC. drift and thermal hysteresis. and how it can be minimized. PD is the device power dissipation. TJ is the device junction temperature. TA is the ambient temperature. θJA is the package (junction-to-air) thermal resistance. can result in premature failure or permanent damage to the device.

0.95 BSC

0.15 MAX

0.05 MIN

1.45 MAX

0.95 MIN

0.20 MAX

0.08 MIN

0.50 MAX

0.30 MIN

Figure 45. 6-Lead Small Outline Transistor Package (SOT-23)

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 23 of 24 NOTES

ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 24 of 24 NOTES ©2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D08440-0-6/10(B)