ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 (Rev. C)
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Technical content
Micropower, High Accuracy Voltage References ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2010–2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com
FEATURES
Initial accuracy: ±0.1% (maximum) Maximum temperature coefficient: 8 ppm/°C Operating temperature range: −40°C to +125°C Output current: +10 mA source/−3 mA sink Low quiescent current: 100 μA (maximum) Low dropout voltage: 250 mV at 2 mA Output noise (0.1 Hz to 10 Hz): <10 μV p-p at 1.2 V (typical) 6-lead SOT-23
APPLICATIONS
Precision data acquisition systems Industrial instrumentation Medical devices Battery-powered devices PIN CONFIGURATION GND FORCE 1 GND SENSE 2 ENABLE 3 VOUT FORCE6 VOUT SENSE5 VIN4 ADR34xx TOP VIEW (Not to Scale) 08440-001 Figure 1. 6-Lead SOT-23 Analog Devices, Inc., proprietary DigiTrim® technology. in critical signal processing systems. Table 1. Selection Guide Table 2. Voltage Reference Choices from Analog Devices
1.2 ADR3412
2.048 ADR360 REF191 ADR430
2.5 ADR3425 ADR291 ADR431 ADR03
3.0 ADR3430 REF193 ADR433 ADR06
3.3 ADR366 REF196
4.096 ADR3440 ADR292 ADR434
5.0 ADR3450 ADR293 ADR435 ADR02
10.0 ADR01
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 2 of 22 TABLE OF CONTENTS Absolute Maximum Ratings and Minimum Operating
REVISION HISTORY
6/2018—Rev. B to Rev. C 6/2010—Re v. A to Rev. B Added ADR3412 Electrical Characteristics Section Added ADR3420 Electrical Characteristics Section Added ADR3433 Electrical Characteristics Section and 4/2010—Re v. 0 to Rev. A Added ADR3440 Electrical Characteristics Section and Changes to Negative Reference Section, Boosted Output 3/2010—R evision 0: Initial Version
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 3 of 22 SPECIFICATIONS ADR3412 ELECTRICAL CHARACTERISTICS VIN = 2.3 V to 5.5 V , TA = 25°C, ILOAD = 0 mA, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 1. 1988 1.2000 1.2012 V INITIAL ACCURACY VOERR ± 0.1 % ± 1.2 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 8 ppm /°C LINE REGULATION ΔVO/ΔVIN VIN = 2.3 V to 5.5 V 7 50 ppm /V VIN = 2.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 160 ppm /V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 14 30 ppm /mA Sinking IL = 0 mA to −3 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 7 50 ppm/m A OUTPUT CURRENT CAPACITY IL Sourcing VIN = 2.8 V to 5.5 V 10 mA Sinking VIN = 2.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation EN ABLE > VIN × 0.85 85 μA EN ABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown E NABLE < 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, −40°C ≤ TA ≤ +125°C 1 1. 1 V IL = 2 mA, −40°C ≤ TA ≤ +125°C 1 1. 15 V ENABLE PIN Shutdown Voltage VL 0 0. 7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, −40°C ≤ TA ≤ +125°C 0. 85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 8 μV p-p f = 10 Hz to 10 kHz 28 μ V rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 0. 6 μV /√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 100 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 4 of 22 ADR3420 ELECTRICAL CHARACTERISTICS VIN = 2.3 V to 5.5 V, TA = 25°C, ILOAD = 0 mA, unless otherwise noted. Table 4. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2. 0459 2.0480 2.0500 V INITIAL ACCURACY VOERR ± 0.1 % ± 2.048 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 8 ppm /°C LINE REGULATION ΔVO/ΔVIN VIN = 2.3 V to 5.5 V 7 50 ppm /V VIN = 2.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 160 ppm /V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 12 30 ppm /mA Sinking IL = 0 mA to −3 mA, VIN = 2.8 V, −40°C ≤ TA ≤ +125°C 7 50 ppm /mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 2.8 V to 5.5 V 10 mA Sinking VIN = 2.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation EN ABLE > VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown E NABLE < 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, −40°C ≤ TA ≤ +125°C 100 250 mV IL = 2 mA, −40°C ≤ TA ≤ +125°C 150 300 mV ENABLE PIN Shutdown Voltage VL 0 0. 7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, −40°C ≤ TA ≤ +125°C 0. 85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 15 μV p-p f = 10 Hz to 10 kHz 38 μ V rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 0. 9 μV /√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 400 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 5 of 22 ADR3425 ELECTRICAL CHARACTERISTICS VIN = 2.7 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 5. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2.49 75 2.500 2.5025 V INITIAL ACCURACY VOERR ±0. 1 % ±2. 5 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN VIN = 2.7 V to 5.5 V 5 50 ppm/ V VIN = 2.7 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/ V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.0 V, −40°C ≤ TA ≤ +125°C 10 30 ppm/ mA Sinking IL = 0 mA to −3 mA, VIN = 3.0 V, −40°C ≤ TA ≤ +125°C 10 50 ppm/ mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.0 V to 5.5 V 10 mA Sinking VIN = 3.0 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENAB LE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENAB LE ≤ 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C 1 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 18 μV p-p f = 10 Hz to 10 kHz 42 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1 µV/ √Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 600 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 6 of 22 ADR3430 ELECTRICAL CHARACTERISTICS VIN = 3.2 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 6. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 2.9 970 3.0000 3.0030 V INITIAL ACCURACY VOERR ±0. 1 % ±3. 0 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 2.5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN VIN = 3.2 V to 5.5 V 5 50 ppm/V VIN = 3.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm/V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.5 V, −40°C ≤ TA ≤ +125°C 9 30 ppm/m A Sinking IL = 0 mA to −3 mA, VIN = 3.5 V, −40°C ≤ TA ≤ +125°C 10 50 ppm/m A OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.5 V to 5.5 V 10 mA Sinking VIN = 3.5 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation ENAB LE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown ENAB LE ≤ 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0.7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C 0.85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 22 μV p-p f = 10 Hz to 10 kHz 45 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1.1 µV/ √Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 700 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 7 of 22 ADR3433 ELECTRICAL CHARACTERISTICS VIN = 3.5 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 7. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 3. 2967 3.30 3.3033 V INITIAL ACCURACY VOERR ± 0.1 % ± 3.3 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 8 ppm /°C LINE REGULATION ΔVO/ΔVIN VIN = 3.5 V to 5.5 V 5 50 ppm /V VIN = 3.5 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm /V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 3.8 V, −40°C ≤ TA ≤ +125°C 9 30 ppm /mA Sinking IL = 0 mA to −3 mA, VIN = 3.8 V, −40°C ≤ TA ≤ +125°C 10 50 ppm /mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 3.8 V to 5.5 V 10 mA Sinking VIN = 3.8 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation EN ABLE > VIN × 0.85 85 μA EN ABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown E NABLE < 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, −40°C ≤ TA ≤ +125°C 50 200 m V IL = 2 mA, −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0. 7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, −40°C ≤ TA ≤ +125°C 0. 85 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 25 μV p-p f = 10 Hz to 10 kHz 46 μ V rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1. 2 μV /√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz - 60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 750 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 8 of 22 ADR3440 ELECTRICAL CHARACTERISTICS VIN = 4.3 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 8. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 4.0919 4. 0960 4.1000 V INITIAL ACCURACY VOERR ± 0.1 % ±4. 096 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 2. 5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN VIN = 4.3 V to 5.5 V 3 50 ppm /V VIN = 4.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm /V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 4.6 V, −40°C ≤ TA ≤ +125°C 6 30 ppm /mA Sinking IL = 0 mA to −3 mA, VIN = 4.6 V, −40°C ≤ TA ≤ +125°C 15 50 ppm /mA OUTPUT CURRENT CAPACITY IL Sourcing VIN = 4.6 V to 5.5 V 10 mA Sinking VIN = 4.6 V to 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation EN ABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown EN ABLE ≤ 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0. 7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 29 μV p-p f = 10 Hz to 10 kHz 53 μ V rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1. 4 µV /√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz − 60 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 800 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 9 of 22 ADR3450 ELECTRICAL CHARACTERISTICS VIN = 5.2 V to 5.5 V , IL = 0 mA, TA = 25°C, unless otherwise noted. Table 9. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE VOUT 4. 9950 5.0000 5.0050 V INITIAL ACCURACY VOERR ± 0.1 % ± 5.0 mV TEMPERATURE COEFFICIENT TCVOUT −40°C ≤ TA ≤ +125°C 2. 5 8 ppm/°C LINE REGULATION ΔVO/ΔVIN VIN = 5.2 V to 5.5 V 3 50 ppm/V VIN = 5.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C 120 ppm /V LOAD REGULATION ΔVO/ΔIL Sourcing IL = 0 mA to 10 mA, VIN = 5.5 V, −40°C ≤ TA ≤ +125°C 3 30 ppm /mA Sinking IL = 0 mA to −3 mA, VIN = 5.5 V, −40°C ≤ TA ≤ +125°C 19 50 ppm/m A OUTPUT CURRENT CAPACITY IL Sourcing VIN = 5.5 V 10 mA Sinking VIN = 5.5 V −3 mA QUIESCENT CURRENT IQ Normal Operation EN ABLE ≥ VIN × 0.85 85 μA ENABLE = VIN, −40°C ≤ TA ≤ +125°C 100 μA Shutdown EN ABLE ≤ 0.7 V 5 μA DROPOUT VOL TAGE1 VDO IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C 50 200 mV IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C 75 250 mV ENABLE PIN Shutdown Voltage VL 0 0. 7 V ENABLE Voltage VH VIN × 0.85 VIN V ENABLE Pin Leakage Current IEN ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C 1 3 μA OUTPUT VOLTAGE NOISE en p-p f = 0.1 Hz to 10 Hz 35 μV p- p f = 10 Hz to 10 kHz 60 μV rms OUTPUT VOLTAGE NOISE DENSITY en f = 1 kHz 1. 5 µV /√Hz OUTPUT VOLTAGE HYSTERESIS2 ΔVOUT_HYS TA = +25°C to −40°C to +125°C to +25°C 70 ppm RIPPLE REJECTION RATIO RRR fIN = 60 Hz −58 dB LONG-TERM STABILITY ΔVOUT_LTD 1000 hours at 50°C 30 ppm TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 900 µs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
TA = 25°C, unless otherwise noted. soldered in a circuit board for surface-mount packages. Table 11. Thermal Resistance
Figure 2. Pin Configuration Table 12. Pin Function Descriptions 3 ENABLE Enable Connection. En ables or disables the device. 4 VIN Input Voltage Connection. 1 See the Applications Information section for more information on force/sense connections.
Figure 14. Line Regulation vs. Temperature
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 18 of 22 TERMINOLOGY Dropout Voltage (VDO) Dropout voltage, sometimes referred to as supply voltage headroom or supply-output voltage differential, is defined as the minimum voltage differential between the input and output such that the output voltage is maintained to within 0.1% accuracy. VDO = (VIN − VOUT)min | IL = constant Because the dropout voltage depends upon the current passing through the device, it is always specified for a given load current. In series-mode devices, dropout voltage typically increases proportionally to load current (see Figure 8 and Figure 14). Temperature Coefficient (TCVOUT) The temperature coefficient relates the change in output voltage to the change in ambient temperature of the device, as normalized by the output voltage at 25°C. This parameter is expressed in ppm/°C and can be determined by the following equation: ( ){ } ( ){ } ( ) ( ) [ ] 123 123 2 31 max , , min , , 10 ppm/°C OUT OUT OUT OUT V TTT V TTTTCV V T TT −= ××− where: VOUT(T) is the output voltage at Temperature T. T1 = −40°C. T2 = +25°C. T3 = +125°C. This three-point method ensures that TCVOUT accurately portrays the maximum difference between any of the three temperatures at which the output voltage of the part is measured. The TCV OUT for the ADR3412/ADR3425/ADR3430/ADR3433/ ADR3440/ADR3450 is guaranteed via statistical means. This is accomplished by recording output voltage data for a large number of units over temperature, computing TCV OUT for each individual device via Equation 1, then defining the maximum TCVOUT limits as the mean TCVOUT for all devices extended by six standard deviations (6σ). Thermally Induced Output Voltage Hysteresis (ΔVOUT_HYS) Thermally induced output voltage hysteresis represents the change in output voltage after the device is exposed to a specified temperature cycle. This is expressed as either a shift in voltage or a difference in ppm from the nominal output. __ (25 C)OUT HYS OUT OUT TCVV V∆ = °− [V] (25 C) 10(25 C) OUT OUT TC OUT HYS OUT VVV V °−∆= ×° [ppm] where: VOUT(25°C) is the output voltage at 25°C. VOUT_TC is the output voltage after temperature cycling. Long-Term Stability (ΔVOUT_LTD) Long-term stability refers to the shift in output voltage at 50°C after 1000 hours of operation in a 50°C environment. Ambient temperature is kept at 50°C to ensure that the temperature chamber does not switch randomly between heating and cooling, which can cause instability over the 1000 hour measurement. This is also expressed as either a shift in voltage or a difference in ppm from the nominal output. ( ) ( )_ 10OUT LTD OUT OUTV V tV t∆=− [V] ( ) ( ) ( ) 10 6 10OUT OUT OUT LTD OUT V tV tV Vt −∆= × [ppm] where: VOUT(t0) is the VOUT at 50°C at Time 0. VOUT(t1) is the VOUT at 50°C after 1000 hours of operation at 50°C. Line Regulation Line regulation refers to the change in output voltage in response to a given change in input voltage and is expressed in percent per volt, ppm per volt, or μV per volt change in input voltage. This parameter accounts for the effects of self-heating. Load Regulation Load regulation refers to the change in output voltage in response to a given change in load current and is expressed in μV per mA, ppm per mA, or ohms of dc output resistance. This parameter accounts for the effects of self-heating. Solder Heat Resistance (SHR) Drift SHR drift refers to the permanent shift in output voltage induced by exposure to reflow soldering, expressed in units of ppm. This is caused by changes in the stress exhibited upon the die by the package materials when exposed to high tempera- tures. This effect is more pronounced in lead-free soldering processes due to higher reflow temperatures.
Figure 39. Block Diagram added to the VBE voltage to compensate for its negative TC. drift and thermal hysteresis. and how it can be minimized. PD is the device power dissipation. TJ is the device junction temperature. TA is the ambient temperature. θJA is the package (junction-to-air) thermal resistance. can result in premature failure or permanent damage to the device.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 20 of 22 APPLICATIONS INFORMATION BASIC VOLTAGE REFERENCE CONNECTION VIN 2.7V TO 5.5V VOUT 2.5V 0.1µF1µF 0.1µF ADR34xx VIN ENABLE VOUT FORCE VOUT SENSE GND FORCE GND SENSE 08440-047 Fig ure 40. Basic Reference Connection The circuit shown in Figure 40 illustrates the basic configuration for the ADR34xx references. Bypass capacitors should be connected according to the following guidelines. INPUT AND OUTPUT CAPACITORS A 1 μF to 10 μF electrolytic or ceramic capacitor can be connected to the input to improve transient response in applications where the supply voltage may fluctuate. An additional 0.1 μF ceramic capacitor should be connected in parallel to reduce high frequency supply noise. A ceramic capacitor of at least a 0.1 μF must be connected to the output to improve stability and help filter out high fre- quency noise. An additional 1 μF to 10 μF electrolytic or ceramic capacitor can be added in parallel to improve transient performance in response to sudden changes in load current; however, the designer should keep in mind that doing so increases the turn-on time of the device. Best performance and stability is attained with low ESR (for example, less than 1 Ω), low inductance ceramic chip-type output capacitors (X5R, X7R, or similar). If using an electrolytic capacitor on the output, a 0.1 µF ceramic capacitor should be placed in parallel to reduce overall ESR on the output. 4-WIRE KELVIN CONNECTIONS Current flowing through a PCB trace produces an IR voltage drop, and with longer traces, this drop can reach several millivolts or more, introducing a considerable error into the output voltage of the reference. A 1 inch long, 5 mm wide trace of 1 ounce copper has a resistance of approximately 100 mΩ at room temperature; at a load current of 10 mA, this can introduce a full millivolt of error. In an ideal board layout, the reference should be mounted as close to the load as possible to minimize the length of the output traces, and, therefore, the error introduced by voltage drop. However, in applications where this is not possible or convenient, force and sense connections (sometimes referred to as Kelvin sensing connections) are provided as a means of minimizing the IR drop and improving accuracy. Kelvin connections work by providing a set of high impedance voltage-sensing lines to the output and ground nodes. Because very little current flows through these connections, the IR drop across their traces is negligible, and the output and ground voltages can be sensed accurately. These voltages are fed back into the internal amplifier and used to automatically correct for the voltage drop across the current-carrying output and ground lines, resulting in a highly accurate output voltage across the load. To achieve the best performance, the sense connections should be connected directly to the point in the load where the output voltage should be the most accurate. See Figure 41 for an example application. LOAD VIN 0.1µF 0.1µF 1µF 08440-048 OUTPUT CAPACITOR(S) SHOULD BE MOUNTED AS CLOSE TO VOUT FORCE PIN AS POSSIBLE. SENSE CONNECTIONS SHOULD CONNECT AS CLOSE TO LOAD DEVICE AS POSSIBLE. ADR34xx VIN ENABLE VOUT FORCE VOUT SENSE GND FORCE GND SENSE Fig ure 41. Application Showing Kelvin Connection It is always advantageous to use Kelvin connections whenever possible. However, in applications where the IR drop is negligi- ble or an extra set of traces cannot be routed to the load, the force and sense pins for both V OUT and GND can simply be tied together, and the device can be used in the same fashion as a normal 3-terminal reference (as shown in Figure 40). VIN SLEW RATE CONSIDERATIONS In applications with slow-rising input voltage signals, the refer- ence exhibits overshoot or other transient anomalies that appear on the output. These phenomena also appear during shutdown as the internal circuitry loses power. To avoid such conditions, ensure that the input voltage wave- form has both a rising and falling slew rate of at least 0.1 V/ms. SHUTDOWN/ENABLE FEATURE The ADR34xx references can be switched to a low power shut- down mode when a voltage of 0.7 V or lower is input to the ENABLE pin. Likewise, the reference becomes operational for ENABLE voltages of 0.85 × VIN or higher. During shutdown, the supply current drops to less than 5 μA, useful in applications that are sensitive to power consumption. If using the shutdown feature, ensure that the ENABLE pin voltage does not fall between 0.7 V and 0.85 × VIN because this causes a large increase in the supply current of the device and may keep the reference from starting up correctly (see Figure 34). If not using the shutdown feature, however, the ENABLE pin can simply be tied to the VIN pin, and the reference remains operational continuously.
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. C | Page 22 of 22 OUTLINE DIMENSIONS COMPLIANT TO JEDEC STANDARDS MO-178-AB 10° SEATING PLANE 1.90 BSC
0.95 BSC
0.60 BSC 6 5 1 2 3 3.00 2.90 2.80 3.00 2.80 2.60 1.70 1.60 1.50 1.30 1.15 0.90
0.15 MAX
0.05 MIN
1.45 MAX
0.95 MIN
0.20 MAX
0.08 MIN
0.50 MAX
0.30 MIN
0.55 0.45 0.35 PIN 1 INDICATOR 12-16-2008-A F igure 45. 6-Lead Small Outline Transistor Package (SOT-23) (RJ-6) Dimensions shown in millimeters ORDERING GUIDE Model1 Output Voltage (V) Temperature Range Package Description Package Option Ordering Quantity Marking Code ADR3412ARJZ-R2 1.200 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2R ADR3412ARJZ-R7 1.200 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2R ADR3420ARJZ-R2 2.048 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2V ADR3420ARJZ-R7 2.048 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2V ADR3425ARJZ-R2 2.500 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2X ADR3425ARJZ-R7 2.500 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2X ADR3430ARJZ-R2 3.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2Z ADR3430ARJZ-R7 3.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2Z ADR3433ARJZ-R2 3.300 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R31 ADR3433ARJZ-R7 3.300 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R31 ADR3440ARJZ-R2 4.096 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R33 ADR3440ARJZ-R7 4.096 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R33 ADR3450ARJZ-R2 5.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R34 ADR3450ARJZ-R7 5.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R34 1 Z = RoHS Compliant Part. ©2010–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D08440-0-6/18(C)