ADR293 AD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

(R Suffix) TOP VIEW (Not to Scale) ADR293 VOUT VIN GND NC NC NC NC NC NC = NO CONNECT 8-Lead TSSOP (RU Suffix) TOP VIEW (Not to Scale) ADR293 VOUT VIN GND NC NC NC NC NC NC = NO CONNECT 3-Lead TO-92 (T9 Suffix) PIN 1 VIN PIN 2 GND PIN 3 VOUT BOTTOM VIEW REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Low Noise Micropower Precision Voltage Reference ADR293

FEATURES

Voltage Output 5.0 V

6.0 V to 15 V Supply Range

Initial Accuracy 63 mV Max Temperature Coefficient 8 ppm/ 8C Max Low Noise 15 mV p–p Typ (0.1 Hz to 10 Hz) High Output Current 5 mA Min Temperature Range 2408C to 11258C REF02/REF19x Pinout

APPLICATIONS

Precision Reference for 5 V Systems A/D and D/A Converter Reference Solar Powered Applications Loop-Current Powered Instruments GENERAL DESCRIPTION The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET ™ (eXtra implanted junction FET) reference circuit. The new XFET architecture offers sig- nificant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term stability. The ADR293 is a series voltage reference providing stable and accurate output voltage from a 6.0 V supply. Quiescent current is only 15 µA max, making this device ideal for battery powered instrumentation. Three electrical grades are available offering initial output accuracy of ± 3 mV, ± 6 mV, and ± 10 mV. Tem- perature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C and 25 ppm/°C max. Line regulation and load regulation are typi- cally 30 ppm/V and 30 ppm/mA, maintaining the reference’s over- all high performance. The ADR293 is specified over the extended industrial tempera- ture range of –40°C to +125°C. This device is available in the 8-lead SOIC, 8-lead TSSOP and the TO-92 package. XFET is a trademark of Analog Devices, Inc. Part Number Nominal Output Voltage (V) ADR290 2.048 ADR291 2.500 ADR292 4.096 ADR293 5.000 Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998

ADR293–SPECIFICATIONS ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units INITIAL ACCURACY “E” Grade V O IOUT = 0 mA 4.997 5.000 5.003 V “F” Grade 4.994 5.006 V “G” Grade 4.990 5.010 V LINE REGULATION “E/F” Grades ΔVO/ΔVIN 6.0 V to 15 V, IOUT = 0 mA 30 100 ppm/V “G” Grade 40 150 ppm/V LOAD REGULATION “E/F” Grades ΔVO/Δ ILOAD VS = 6.0 V, 0 mA to 5 mA 30 100 ppm/mA “G” Grade 40 150 ppm/mA LONG TERM STABILITY ΔVO 1000 hrs @ +25°C, VS = +15 V 0.2 ppm NOISE VOLTAGE e N 0.1 Hz to 10 Hz 15 µV p-p WIDEBAND NOISE DENSITY e N at 1 kHz 640 nV/ √Hz ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units TEMPERATURE COEFFICIENT “E” Grade TCV O/°CI OUT = 0 mA 3 8 ppm/ °C “F” Grade 5 15 ppm/ °C “G” Grade 10 25 ppm/ °C LINE REGULATION “E/F” Grades ΔVO/ΔVIN 6.0 V to 15 V, IOUT = 0 mA 35 150 ppm/V “G” Grade 50 200 ppm/V LOAD REGULATION “E/F” Grades ΔVO/Δ ILOAD VS = 6.0 V, 0 mA to 5 mA 20 150 ppm/mA “G” Grade 30 200 ppm/mA ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units TEMPERATURE COEFFICIENT “E” Grade TCV O/°CI OUT = 0 mA 3 10 ppm/ °C “F” Grade 5 20 ppm/ °C “G” Grade 10 30 ppm/ °C LINE REGULATION “E/F” Grades ΔVO/ΔVIN 6.0 V to 15 V, IOUT = 0 mA 40 200 ppm/V “G” Grade 70 250 ppm/V LOAD REGULATION “E/F” Grades ΔVO/Δ ILOAD VS = 6.0 V, 0 mA to 5 mA 20 200 ppm/mA “G” Grade 30 300 ppm/mA SUPPLY CURRENT @ +25 °C1 1 1 5 µA 15 20 µA THERMAL HYSTERESIS TO-92 160 ppm SO-8 72 ppm TSSOP-8 157 ppm Specifications subject to change without notice. (VS = 16.0 V, TA = 1258C unless otherwise noted) (VS = 16.0 V, TA = 2408C ≤ TA ≤ 11258C unless otherwise noted) (VS = 16.0 V, TA = 2258C ≤ TA ≤ 1858C unless otherwise noted) REV. 0–2–

REV. 0 –3– WAFER TEST LIMITS Parameter Symbol Conditions Limits Units INITIAL ACCURACY V O IOUT = 0 mA 4.990/5.010 V LINE REGULATION ΔVO/ΔVIN 6.0 V < VIN < 15 V, IOUT = 0 mA 150 ppm/V LOAD REGULATION ΔVO/Δ ILOAD 0 mA to 5 mA 150 ppm/mA SUPPLY CURRENT No load 15 µA NOTES Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss , yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assem bly and testing. Specifications subject to change without notice. DICE CHARACTERISTICS Die Size 0.074 3 0.052 inch, 3848 sq. mils (1.88 3 1.32 mm, 2.48 sq. mm) Transistor Count: 52 (VS = 16.0 V, TA = 1258C unless otherwise noted) VIN VOUT(SENSE) VOUT(FORCE) GND

REV. 0–4– ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Junction Temperature Range NOTE 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADR293 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE Package Type uJA 1 uJC Units 8-Lead SOIC (R) 158 43 °C/W 3-Lead TO-92 (T9) 162 120 °C/W 8-Lead TSSOP (RU) 240 43 °C/W NOTE 1θJA is specified for worst case conditions, i.e., θJA is specified for device in socket for PDIP, and θJA is specified for a device soldered in circuit board for SOIC packages. ORDERING GUIDE Model Temperature Range Package Type Package Options ADR293ER, ADR293FR, ADR293GR 240°C to 1125°C 8-Lead SOIC R-8 ADR293ER-REEL, ADR293FR-REEL, ADR293GR-REEL 240°C to 1125°C 8-Lead SOIC R-8 ADR293ER-REEL7, ADR293FR-REEL7, ADR293GR-REEL7 240°C to 1125°C 8-Lead SOIC R-8 ADR293GT9 240°C to 1125°C 3-Lead TO-92 T9 ADR293GT9-REEL 240°C to 1125°C 3-Lead TO-92 T9 ADR293GRU-REEL 240°C to 1125°C 8-Lead TSSOP RU-8 ADR293GRU-REEL7 240°C to 1125°C 8-Lead TSSOP RU-8 ADR293GBC 125°C DICE

REV. 0 –11– OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Narrow Body SO (R-8) 0.1968 (5.00) 0.1890 (4.80) 0.1574 (4.00) 0.1497 (3.80) 0.2440 (6.20) 0.2284 (5.80) PIN 1 SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.102 (2.59) 0.094 (2.39) 0.0500 (1.27) BSC 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25)x 45° 8-Lead TSSOP (RU-8) 8 5 0.122 (3.10) 0.114 (2.90) 0.256 (6.50) 0.246 (6.25) 0.177 (4.50) 0.169 (4.30) PIN 1 0.0256 (0.65) BSC SEATING PLANE 0.006 (0.15) 0.002 (0.05) 0.0118 (0.30) 0.0075 (0.19) 0.0433 (1.10) MAX 0.0079 (0.20) 0.0035 (0.090) 0.028 (0.70) 0.020 (0.50) 3-Lead TO-92 (T9 Suffix) 0.105 (2.66) 0.080 (2.42) 0.105 (2.66) 0.080 (2.42) 0.165 (4.19) 0.125 (3.94) SQUARE 0.019 (0.482) 0.016 (0.407) 0.105 (2.66) 0.095 (2.42) 0.055 (1.39) 0.045 (1.15) SEATING PLANE 0.500 (12.70) MIN 0.205 (5.20) 0.175 (4.96) 0.210 (5.33) 0.170 (4.38) 123 BOTTOM VIEW 0.135 (3.43) MIN 0.050 (1.27) MAX C3347–8–6/98PRINTED IN U.S.A.