ADN2821 AD | Alldatasheet
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11.1 Gbps 3.3V Transimpedance Amplifier Preliminary Technical Data ADN2821 Rev. PrL Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent ri ghts of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
FEATURES
Bandwidth: 8 GHz min Input Noise Current Density: 12pA√Hz Optical sensitivity: −19 dBm1 Differential Transimpedance /Linear Range: ADN2821_2: 2.0 kΩ/0.20 mA p-p ADN2821_5: 5.0 kΩ/0.08 mA p -p ADN2821_10: 10.0 kΩ/0.04 mA p-p Power Dissipation: 150 mW Differential Output Swing: 400 mV p-p min Input Overload: 3.25 dBm @ 10 dB ER Low-F cutoff: ADN2821_10: 25 kHz w/C LF = 0.5 nF On-Chip PD filter: RF = 200 Ω, CF = 20 pF RSSI voltage and current ratio: 0.8V/mA Die Size: 0.65 mm × 1.20 mm
APPLICATIONS
10.7 Gbps Optical Modules
SONET/SDH OC-192/STM-64 and 10 GbE Receivers, Transceivers, Transponders PRODUCT DESCRIPTION The ADN2821_2/5/10 are a series of compact, high performance SiGe 3.3V power supply Trans-impedance Amplifiers (TIAs) optimized for small form factor 10Gbps Metro-Access and Ethernet PD-TIA modules. The ADN2821 series features low input referred noise current and a range of trans-impedance gains, suitable for driving a typical CDR or transceiver directly. 8GHz minimum BW enables up to 11.1Gbps operation; 1.1µA input referred noise current enables −19dBm sensitivity; 3.25dBm input overload current at a 10dB extinction ratio. RSSI output signal proportional to average input current is available for monitoring and alarm generation. For assembly in small form factor packages, the ADN2821 series integrates a photodiode filter R FCF network on chip and features 25kHz low frequency cutoff with small 0.5nF external capacitor The ADN2821 operates with a 3.3V ±0.3V power supply and is available in die form. 1 10-12 BER, 10 dB extinction ratio, 0.85 A/W PD responsivity. FUNCTIONAL BLOCK DIAGRAM Figure 1. ADN2821 Block Diagram.
ADN2821 Preliminary Technical Data Rev. PrL| Page 2 of 8 TABLE OF CONTENTS
REVISION HISTORY
Revision PrL: Preliminary Version 11/04 Revision Pr-A: Add RSSI function Spec.
Preliminary Technical Data ADN2821 Rev. PrL | Page 3 of 8 ELECTRICAL SPECIFICATIONS Table 1. Parameter Conditions 1 Min Typ Max Units DYNAMIC PERFORMANCE Bandwidth (BW)2 −3 dB 8 9.5 GHz Total Input RMS Noise (IRMS)2 DC to 10GHz 1.1 1.3 µA Small Signal Trans-impedance (TZ) ADN2821_2, 100 MHz 1500 2000 2500 V/A ADN2821_5, 100 MHz 3500 5000 6500 V/A ADN2821_10, 100 MHz 6000 10000 15000 V/A Trans-impedance Ripple2 50 MHz to 5 GHz ±1 dB Group Delay Variation2 50 MHz to 8 GHz ±10 ps Low Frequency Cut-Off C LF = 1000 pF 15 kHz Output Return Loss2 DC to 8 GHz, differential −12 −10 dB Total pk-pk Jitter2 I IN,PK- PK = 2.0 mA, 4 dB ER 5 TBD ps Input Overload Current3, 2 Pav, 10 -12 BER, 10 dB ER TBD 3.25 dBm Maximum Output Swing p-p diff, I IN,PK- PK = 2.5mA 400 520 650 mV Linear Output Range p-p, < 1 dB gain compression 400 mV Power Supply Noise Rejection <10MHz TBD dB DC PERFORMANCE Power Dissipation I IN,AVE = 0.1 mA, Vcc = 3.3 V ± 5% 150 200 mW Input Voltage 0.85 V Output Impedance single-ended 50 Ω PD FILTER Resistance R F 200 Ω PD FILTER Capacitance C F 20 pF RSSI Sensitivity I IN, AVE = 0 uA to 1 mA 0.8 V/mA RSSI Offset I IN, AVE = 0 uA TBD mV 1 Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, Tambient = +25C Load impedance = 50Ω (each output, AC coupled) 3 10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity
ADN2821 Preliminary Technical Data Rev. PrL| Page 4 of 8 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage (Vcc to Gnd) 5V Internal Power Dissipation Output Short Circuit Duration Indefinite Maximum Input Current 10 mA Storage Temperature Range −65°C to +125°C Operating Ambient Temperature Range −40°C to +95°C Maximum Junction Temperature +165°C Die Attach Temperature (<60 seconds) +450°C Stresses above those listed under ‘ Absolute Maximum Rating’ may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Preliminary Technical Data ADN2821 Rev. PrL | Page 5 of 8 PAD DESCRIPTIONS Table 3. Pad No. Pad Function
1 GND Ground (input return)
2 IN Current input. Bond directly to PD anode. 3 TEST Test probe Pad. Leave Floating. 4 FILTER Filter Output. 5 FILTER Filter Output.
6 GND Ground
7 RSSI Voltage Output (provides average input current reading)
8 CAP Low Frequency set point. Connect with .5nF capacitance to GND for <30kHz
9 GND Ground
10 GND Ground (output return)
11 OUTB Negative Output. Drives 50 ohm termination (AC or DC termination) 12 OUT Positive Output. Drives 50 ohm te rmination (AC or DC termination)
13 GND Ground (output return)
14 GND Ground
15 VCCFILTER Filter Supply. Connect to V cc to enable on-chip 200 ohm*20pf Filter. 16 VCC 3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor. 17 VCC 3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor. B FILTER RSSI
ADN2821 Preliminary Technical Data Rev. PrL| Page 6 of 8 PAD LAYOUT Figure 2.. Pad Layout PAD COORDINATES Table 4. PAD # PAD X (um) Y (um)
1 GND −500 260
2 IN −500 130
3 TEST −500 10
4 FILTER −500 −120
5 FILTER −500 −260
6 GND −350 −260
7 RSSI −200 −260
8 CAP −50 −260
9 GND 130 −260
10 GND 500 −260
11 OUTB 350 −60
12 OUT 350 60
13 GND 500 260
14 GND 130 260
15 VCCFILTER −50 260
16 VCC −200 260
17 VCC −350 260
0.7mm × 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm × 0.075 mm 0.144mm × 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000Å Si3N4 (top) +5000 Å SiO2 (bot) Pad Composition Al/1%Cu Backside Contact B FILTER RSSI
Figure 3. 5-Pin TO-46 w/External Photodiode Supply VPD
- 1× VENDOR SPECIFIC (0.3mm × 0.3mm) 10.0Gbps Photo Diode
- 1× ADN2821 (0.7mm × 1.2mm) Analog Devices SiGe 10.0Gbps Trans-Impedance Amplifier
- 200pF RF Single Layer Capacitor
- 560pF RF Single Layer Capacitor
- 1000pF Ceramic Cap Notes: 1. Minimize all GND bond wire lengths. 2. Minimize IN, FILTER, OUT and OUTB bond wire lengths. 3. Maintain symmetry in length and orientation between IN and FILTER bond wires. 4. Maintain symmetry in length and orientation between OUT and OUTB bond wires. 5. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
ADN2821 Preliminary Technical Data Rev. PrL| Page 8 of 8 ORDERING GUIDE Model Temperature Package Description Package Option ADN2821XCHIP-02KWP -40 oC to 95oC NA Tested Die ADN2821XCHIP-05KWP -40 oC to 95oC NA Tested Die ADN2821XCHIP-10KWP -40 oC to 95oC NA Tested Die © 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the proper ty of their respective companies. Printed in the U.S.A. PR04369–0–11/04(PrL)