ADL8150 (Rev. 0)

Document overview

  • Manufacturer or author: Analog Devices, Inc.
  • PDF pages: 15

Technical content

GaAs, HBT, MMIC, Low Phase Noise Amplifier, 6 GHz to 14 GHz Data Sheet ADL8150 Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com

FEATURES

OP1dB: 18 dBm (typical at 7 GHz to 12 GHz) PSAT: 22 dBm (typical at 7 GHz to 12 GHz) Gain: 12 dB (typical at 7 GHz to 12 GHz) OIP3: 30 dBm typical Phase noise: −172 dBc/Hz at 10 kHz offset Supply voltage: 5 V at 74 mA 6-lead, 2 mm × 2 mm LFCSP

APPLICATIONS

Figure 1. GENERAL DESCRIPTION The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage. The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). Note that throughout this data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.

Rev. 0 | Page 2 of 15 TABLE OF CONTENTS

REVISION HISTORY

10/2020—Revision 0: Initial Version

Rev. 0 | Page 3 of 15 SPECIFICATIONS FREQUENCY RANGE: 6 GHz TO 7 GHz Collector bias voltage (VCC) = 5 V, supply current (ICQ) = 74 mA and TA = 25°C, unless otherwise noted. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 6 7 GHz GAIN 8 10.5 dB Gain Flatness ±1.0 dB Gain Variation over Temperature 0.033 dB/°C NOISE FIGURE 4.8 dB PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier RETURN LOSS Input 2 dB Output 14 dB OUTPUT OP1dB 15.5 17.5 dBm Saturated Output Power (PSAT) 20.5 dBm OIP3 30 dBm Measurement taken at output power (POUT) per tone = 6 dBm Output Second-Order Intercept (OIP2) 32 dBm Measurement taken at POUT per tone = 6 dBm SUPPLY ICQ 74 mA Self biased VCC 3 5 6 V FREQUENCY RANGE: 7 GHz TO 12 GHz VCC = 5 V, ICQ = 74 mA and TA = 25°C, unless otherwise noted. Table 2. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 7 12 GHz GAIN 10 12 dB Gain Flatness ±0.5 dB Gain Variation over Temperature 0.024 dB/°C NOISE FIGURE 3.6 dB PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier RETURN LOSS Input 7.5 dB Output 8 dB OUTPUT OP1dB 16 18 dBm PSAT 22 dBm OIP3 30 dBm Measurement taken at POUT per tone = 6 dBm OIP2 44.5 dBm Measurement taken at POUT per tone = 6 dBm SUPPLY ICQ 74 mA Self biased VCC 3 5 6 V

Rev. 0 | Page 4 of 15 FREQUENCY RANGE: 12 GHz TO 14 GHz VCC = 5 V , ICQ = 74 mA and TA = 25°C, unless otherwise noted. Table 3. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 12 14 GHz GAIN 8 10.5 dB Gain Flatness ±0.9 dB Gain Variation over Temperature 0.034 dB/°C NOISE FIGURE 3.8 dB PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier RETURN LOSS Input 5 dB Output 8 dB OUTPUT OP1dB 15.5 17.5 dBm PSAT 21.5 dBm OIP3 30 dBm Measurement taken at P OUT per tone = 6 dBm OIP2 60 Measurement taken at P OUT per tone = 6 dBm SUPPLY ICQ 74 mA Self biased VCC 3 5 6 V

1 See the Ordering Guide for more information. PCB thermal design is required. θJC is the junction to case thermal resistance. Table 5. Thermal Resistance ESD-sensitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Table 6. ADL8150, 6-Lead LFCSP

noise amplifier. Figure 41 shows the typical application circuit. 531Z104KTR16T, 0.1 μF capacitor.

  1. Connect the VCC pin to the power supply.
  2. Apply the RF input signal.
  3. Turn off the RF input signal.

Figure 41. Typical Application Circuit

0.203 REF

0.05 MAX

0.02 NOM

1.30 REF

Figure 42. 6-Lead Lead Frame Chip Scale Package [LFCSP] 2 When ordering the evaluation board only, reference the model number, ADL8150-EVALZ. 3 See the Absolute Maximum Ratings section for additional information. 4 The lead finish of the ADL8150ACPZN and ADL8150ACPZN-R7 is nickel palladium gold (NiPdAu). registered trademarks are the property of their respective owners.