ADL8142-2C-CSL

Datasheet search site | www.alldatasheet.com

Document overview

• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 8

Technical content

GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

FEATURES

►Low noise figure: 1.8 dB typical at 27 GHz to 31 GHz ►Single positive supply (self biased) ►High gain: 26.5 dB typical at 27 GHz to 31 GHz ►High OIP3: 20 dBm typical at 27 GHz to 31 GHz ►Die size: 0.945 mm × 1.015 mm × 0.100 mm COMMERCIAL SPACE FEATURES ►Wafer diffusion lot traceability ►Radiation benchmark ►Total ionizing dose (TID): 30 krads ►Single event latchup (SEL): ≥ 62.4 MeV-cm2/mg

APPLICATIONS

►Geosynchronous high throughput satellite (GEO HTS) ►Low Earth orbit (LEO) space payloads ►Satellite communication GENERAL DESCRIPTION The ADL8142-2C-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142-2C-CSL provides a typical gain of 26.5 dB, a 1.8 dB typical noise figure, and a typical output third-order intercept (OIP3) of 20 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142-2C-CSL also features inputs and outputs that are AC-coupled and internally matched to 50 Ω, making it ideal for high capacity microwave radio applications. FUNCTIONAL BLOCK DIAGRAM Figure 1.

analog.com Rev. 0 | 2 of 8

REVISION HISTORY

11/2022—Revision 0: Initial Version

analog.com Rev. 0 | 3 of 8 FREQUENCY RANGE: 23 GHZ TO 27 GHZ TC = 25°C, supply voltage (VDD) = 2 V, and quiescent current (IDQ) = 25 mA for nominal operation, unless otherwise noted. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 23 27 GHz GAIN 28 dB Gain Variation over Temperature 0.023 dB/°C NOISE FIGURE 1.9 dB RETURN LOSS Input 11 dB Output 12 dB OUTPUT Power for 1 dB Compression (OP1dB) 7 dBm Saturated Output Power (PSAT) 9 dBm OIP3 16 dBm Measurement taken at output power (POUT) per tone = –2 dBm POWER ADDED EFFICIENCY (PAE) 14 % Measured at PSAT FREQUENCY RANGE: 27 GHZ TO 31 GHZ TC = 25°C, VDD = 2 V, and IDQ = 25 mA for nominal operation, unless otherwise noted. Table 2. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 27 31 GHz GAIN 23.5 26.5 dB Gain Variation over Temperature 0.022 dB/°C NOISE FIGURE 1.8 dB RETURN LOSS Input 21 dB Output 8 dB OUTPUT OP1dB 6 8.5 dBm PSAT 10 dBm OIP3 20 dBm Measurement taken at POUT per tone = –2 dBm POWER ADDED EFFICIENCY (PAE) 17 % Measured at PSAT DC SPECIFICATIONS Table 3. Parameter Min Typ Max Unit SUPPLY CURRENT IDQ 25 mA Amplifier Current (IDQ_AMP) 22.6 mA RBIAS Current (IRBIAS) 2.4 mA SUPPLY VOLTAGE (VDD) 1.5 2 3.5 V

analog.com Rev. 0 | 4 of 8 RADIATION TEST AND LIMIT SPECIFICATIONS Electrical characteristics at VDD = 2 V, IDQ = 25 mA, RBIAS = 499 Ω, and TC = 25°C, unless otherwise noted. Total ionizing dose (TID) testing characterized to 30 krads, SEL ≥ 62.4 MeV-cm2/mg. Table 4. Parameter Min Typ Max Unit FREQUENCY RANGE 27 31 GHz GAIN 23.5 26.5 dB OP1dB 6 8.5 dBm SUPPLY CURRENT IDQ 25 mA SUPPLY VOLTAGE (VDD) 1.5 2 3.5 V

ing conditions for extended periods may affect product reliability. Table 6. Thermal Resistance been used as screening levels for rejection of spacecraft materials. Table 7. Outgas Testing

1 Outgas testing was performed after encapsulating the ADL8142-2C-CSL chip

in the 8-lead lead frame chip scale package (LFCSP) of the ADL8142 . sitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDDEC JS-001. Table 8. ADL8142-2C-CSL, 8-Pad CHIP damage may occur on devices subjected to high energy ESD. performance degradation or loss of functionality.

Figure 2. Pad Configuration Table 9. Pad Function Descriptions 2, 4, 5, 7 GND Ground. Connect the GND pins to a ground plane that has low electrical and thermal impedance. 3 RFIN RF Input. The RFIN pin is AC-coupled and matched to 50 Ω. also a DC path to ground on the RFOUT side of the AC coupling capacitor. 8 VDD Drain Bias. Connect the VDD pin to the supply voltage. Die Bottom GND Die bottom must be connected to RF and DC ground.

TYPICAL PERFORMANCE CHARACTERISTICS analog.com Rev. 0 | 7 of 8 See the ADL8142-2CHIP data sheet for the typical performance characteristics plots.

registered trademarks are the property of their respective owners. One Analog Way, Wilmington, MA 01887-2356, U.S.A. Figure 3. 8-Pad Bare Die [CHIP]