ADL8107_V01 AD | Alldatasheet
Document overview
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Technical content
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz Rev. B DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
FEATURES
►Single positive supply (self biased) ►Gain: 24 dB typical at 7 GHz to 16 GHz ►OIP3: 29 dBm typical at 7 GHz to 16 GHz ►Noise figure: 1.3 dB typical at 7 GHz to 16 GHz ►8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions section)
APPLICATIONS
►Test instrumentation ►Military communications ►Radar GENERAL DESCRIPTION The ADL8107 is a gallium arsenide (GaAs), monolithic micro- wave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. The ADL8107 provides a typical gain of 24 dB at 7 GHz to 16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a 18.5 dBm typical output power for 1 dB compression (OP1dB) at
7 GHz to 16 GHz, and a typical output third-order intercept (OIP3)
of 29 dBm at 7 GHz to 16 GHz, requiring only 90 mA from a 5 V drain supply voltage. This low noise amplifier has a high output sec- ond-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz, making the ADL8107 suitable for military and test instrumentation applications. The ADL8107 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-cou- pled, and the bias inductor is also integrated, making the ADL8107 ideal for surface-mounted technology (SMT)-based, high density applications. The ADL8107 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP. FUNCTIONAL BLOCK DIAGRAM Figure 1.
analog.com Rev. B | 2 of 23 Using the RBIAS Pin to Enable and Disable
REVISION HISTORY
8/2023—Rev. A to Rev. B 10/2022—Rev. 0 to Rev. A 1/2022—Revision 0: Initial Version
analog.com Rev. B | 3 of 23
6 GHZ TO 7 GHZ FREQUENCY RANGE
VDD = 5 V, total supply current (IDQ) = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 6 7 GHz GAIN 19.5 22.5 dB Gain Variation over Temperature 0.03 dB/°C NOISE FIGURE 1.9 dB RETURN LOSS Input 12 dB Output 13 dB OUTPUT OP1dB 15 18 dBm Saturated Output Power (PSAT) 19.5 dBm OIP3 28 dBm Measurement taken at output power (POUT) per tone = 6 dBm OIP2 27 dBm Measurement taken at POUT per tone = 6 dBm POWER ADDED EFFICIENCY (PAE) 16 % Measured at PSAT
7 GHZ TO 16 GHZ FREQUENCY RANGE
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted. Table 2. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 7 16 GHz GAIN 21.5 24 dB Gain Variation over Temperature 0.048 dB/°C NOISE FIGURE 1.3 dB RETURN LOSS Input 12 dB Output 13.5 dB OUTPUT OP1dB 16.5 18.5 dBm Saturated Output Power (PSAT) 20 dBm OIP3 29 dBm Measurement taken at POUT per tone = 6 dBm OIP2 30.5 dBm Measurement taken at POUT per tone = 6 dBm POWER ADDED EFFICIENCY (PAE) 18 % Measured at PSAT
analog.com Rev. B | 4 of 23
16 GHZ TO 18 GHZ FREQUENCY RANGE
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted. Table 3. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 16 18 GHz GAIN 18 20.5 dB Gain Variation over Temperature 0.046 dB/°C NOISE FIGURE 1.7 dB RETURN LOSS Input 8 dB Output 7 dB OUTPUT OP1dB 14 17 dBm Saturated Output Power (PSAT) 19 dBm OIP3 28.5 dBm Measurement taken at POUT per tone = 6 dBm OIP2 33 dBm Measurement taken at POUT per tone = 6 dBm POWER ADDED EFFICIENCY (PAE) 12 % Measured at PSAT DC SPECIFICATIONS Table 4. Parameter Min Typ Max Unit SUPPLY CURRENT IDQ 90 mA Amplifier Current (IDQ_AMP) 89 mA RBIAS Current (IRBIAS) 1 mA SUPPLY VOLTAGE VDD 3 5 5.5 V
ing conditions for extended periods may affect product reliability. PCB thermal design is required. θJC is the junction to case thermal resistance. Table 6. Thermal Resistance sitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Table 7. ADL8107, 8-Lead LFCSP damage may occur on devices subjected to high energy ESD. performance degradation or loss of functionality.
Figure 19. Output Return Loss vs. Frequency for Various Temperatures,
4 GHz to 20 GHz, VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 20. Output Return Loss vs. Frequency for Various Supply Voltages Figure 21. Reverse Isolation vs. Frequency for Various Temperatures, 4 GHz Figure 22. Output Return Loss vs. Frequency for Various Temperatures, Figure 23. Output Return Loss vs. Frequency for RBIAS Values and Various Figure 24. Reverse Isolation vs. Frequency for Various Temperatures, 4 GHz
Figure 25. Reverse Isolation vs. Frequency for Various Supply Voltages and Figure 26. Reverse Isolation vs. Frequency for Various Supply Voltages and Figure 27. Noise Figure vs. Frequency for Various Temperatures, Figure 28. Reverse Isolation vs. Frequency for RBIAS Values and Various IDQ, Figure 29. Noise Figure vs. Frequency for Various Supply Voltages and Figure 30. Noise Figure vs. Frequency for Various Temperatures,
characterize and qualify the ADL8107. power from RFIN before VDD is powered off. Figure 79. Typical Application Circuit Table 9. Recommended Bias Resistor Values for VDD = 5 V
range to the LT8607 can be as high as 42 V. ranging from 0.2 MHz to 2.2 MHz. recommended resistor values for operation at 5 V, 3.3 V, and 3 V. Table 10. Recommended Resistor Values for Operating at 5 V, 3.3 V, and 3 V
1.5 A and 3 A, respectively, and these devices are pin compatible
ble with LT3042, can source a maximum current to 500 mA. Figure 80. Recommended Power Management Circuit
registered trademarks are the property of their respective owners. One Analog Way, Wilmington, MA 01887-2356, U.S.A. Figure 83. 8-Lead Lead Frame Chip Scale Package [LFCSP]