ADL8104ACPZN

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Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz Data Sheet ADL8104 Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com

FEATURES

Single positive supply (self biased) High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz High gain: 15 dB typical at 0.6 GHz to 6 GHz High OIP3: 32 dBm typical Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

APPLICATIONS

Figure 1. GENERAL DESCRIPTION The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz. The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at

0.6 GHz to 6 GHz, and a typical output third-order intercept

(OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at

0.6 GHz to 6 GHz, making the ADL8104 suitable for military

and test instrumentation applications. The ADL8104 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications. The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP.

Rev. 0 | Page 2 of 23 TABLE OF CONTENTS

REVISION HISTORY

9/2020—Revision 0: Initial Version

Rev. 0 | Page 3 of 23 SPECIFICATIONS 0.4 GHz TO 0.6 GHz FREQUENCY RANGE VDD = 5 V, total supply current (IDQ) = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 0.4 0.6 GHz GAIN 11.5 14 dB Gain Variation over Temperature 0.036 dB/°C NOISE FIGURE 3.5 dB RETURN LOSS Input 12 dB Output 13 dB OUTPUT OP1dB 16.5 19 dBm Saturated Output Power (PSAT) 21 dBm OIP3 32 dBm Measurement taken at output power (POUT) per tone = 5 dBm OIP2 50 dBm Measurement taken at POUT per tone = 5 dBm POWER ADDED EFFICIENCY (PAE) 18 % Measured at PSAT

0.6 GHz TO 6 GHz FREQUENCY RANGE

VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted. Table 2. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 0.6 6 GHz GAIN 12 15 dB Gain Variation over Temperature 0.030 dB/°C NOISE FIGURE 3.5 dB RETURN LOSS Input 12 dB Output 12 dB OUTPUT OP1dB 17.5 20 dBm PSAT 21 dBm OIP3 32 dBm Measurement taken at POUT per tone = 5 dBm OIP2 52 dBm Measurement taken at POUT per tone = 5 dBm PAE 12 % Measured at PSAT 6 GHz TO 7.5 GHz FREQUENCY RANGE VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted. Table 3. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 6 7.5 GHz GAIN 10 13 dB Gain Variation over Temperature 0.041 dB/°C NOISE FIGURE 4.5 dB RETURN LOSS Input 12 dB Output 12 dB

Rev. 0 | Page 4 of 23 Parameter Min Typ Max Unit Test Conditions/Comments OUTPUT OP1dB 15.5 18 dBm PSAT 19 dBm OIP3 32 dBm Measurement taken at POUT per tone = 5 dBm OIP2 52 dBm Measurement taken at POUT per tone = 5 dBm PAE 12 % Measured at PSAT DC SPECIFICATIONS Table 4. Parameter Min Typ Max Unit SUPPLY CURRENT IDQ 150 mA Drain Current (IDD) 144 mA RBIAS Current (IRBIAS) 6 mA SUPPLY VOLTAGE VDD 3 5 5.5 V

1 See the Ordering Guide for more information. operational section of this specification is not implied. extended periods may affect product reliability. PCB thermal design is required. θJC is the junction to case thermal resistance. Table 6. Thermal Resistance ESD-sensitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Table 7. ADL8104, 16-Lead LFCSP

Figure 13. Gain vs. Frequency for Various RBIAS and IDQ Values,

0.3 GHz to 1 GHz, VDD = 5 V

Figure 14. Input Return Loss vs. Frequency for Various Temperatures, Figure 15. Input Return Loss vs. Frequency for Various VDD and IDQ Values, Figure 16. Gain vs. Frequency for Various RBIAS and IDQ Values,

1 GHz to 10 GHz, VDD = 5 V

Figure 17. Input Return Loss vs. Frequency for Various Temperatures, Figure 18. Input Return Loss vs. Frequency for Various VDD and IDQ Values,

Figure 19. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values, Figure 20. Output Return Loss vs. Frequency for Various Temperatures, 0.3 GHz Figure 21. Output Return Loss vs. Frequency for Various VDD and IDQ Values, Figure 22. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values, Figure 23. Output Return Loss vs. Frequency for Various Temperatures, 1 GHz to Figure 24. Output Return Loss vs. Frequency for Various VDD and IDQ Values,

Figure 25. Output Return Loss vs. Frequency for Various RBIAS and IDQ Values, Figure 26. Reverse Isolation vs. Frequency for Various Temperatures, 0.3 GHz Figure 27. Reverse Isolation vs. Frequency for Various VDD and IDQ Values, Figure 28. Output Return Loss vs. Frequency for Various RBIAS and IDQ Values, Figure 29. Reverse Isolation vs. Frequency for Various Temperatures, 1 GHz Figure 30. Reverse Isolation vs. Frequency for Various VDD and IDQ Values,

Figure 31. Reverse Isolation vs. Frequency for Various RBIAS and IDQ Values, Figure 32. Noise Figure vs. Frequency for Various Temperatures, 0.3 GHz to Figure 33. Noise Figure vs. Frequency for Various VDD and IDQ Values, 0.3 GHz Figure 34. Reverse Isolation vs. Frequency for Various RBIAS and IDQ Values, Figure 35. Noise Figure vs. Frequency for Various Temperatures, 1 GHz to Figure 36. Noise Figure vs. Frequency for Various VDD and IDQ Values, 1 GHz

Figure 43. OP1dB vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to Figure 44. OP1dB vs. Frequency for Various RBIAS and IDQ Values, 0.35 GHz to

1 GHz, VDD = 5 V

Figure 45. PSAT vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz, Figure 46. OP1dB vs. Frequency for Various VDD and IDQ Values, 1 GHz to Figure 47. OP1dB vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to

10 GHz, VDD = 5 V

Figure 48. PSAT vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,

Figure 49. PSAT vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to Figure 50. PSAT vs. Frequency for Various RBIAS and IDQ Values, 0.35 GHz to Figure 51. PAE vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz, Figure 52. PSAT vs. Frequency for Various VDD and IDQ Values, 1 GHz to 10 GHz, Figure 53. PSAT vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to Figure 54. PAE vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,

Figure 55. PAE vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to Figure 56. PAE vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to Figure 57. POUT, Gain, PAE, and IDD vs. Input Power, Figure 58. PAE vs. Frequency for Various VDD and IDQ Values, 1 GHz to 10 GHz, Figure 59. PAE vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to Figure 60. POUT, Gain, PAE, and IDD vs. Input Power,

Figure 67. PDISS vs. Input Power at TA = 85°C, VDD = 5 V, IDQ = 150 mA, Figure 68. OIP3 vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz, Figure 69. OIP3 vs. Frequency for Various VDD and IDQ Values, 0.3 GHz to

1 GHz, VDD = 5 V, POUT per Tone = 5 dBm

Figure 70. OIP3 vs. Frequency for Various POUT per Tone, VDD = 5 V, RBIAS = 90.9 Ω, Figure 71. OIP3 vs. Frequency for Various Temperatures, 1 GHz to 10 GHz, Figure 72. OIP3 vs. Frequency for Various VDD and IDQ Values, 1 GHz to

10 GHz, VDD = 5 V, POUT per Tone = 5 dBm

Figure 73. OIP3 vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to Figure 74. Third-Order Intermodulation Distortion Relative to Carrier (IMD3) Figure 75. OIP2 vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz, Figure 76. OIP3 vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to Figure 77. OIP2 vs. Frequency for Various POUT per Tone, VDD = 5 V, Figure 78. OIP2 vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,

Figure 79. OIP2 vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to Figure 80. OIP2 vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to Figure 81. IDQ vs. Input Power for Various Frequencies, VDD = 5 V, RBIAS = 90.9 Ω Figure 82. OIP2 vs. Frequency for Various VDD and IDQ Values, 1 GHz to

Figure 83. OIP2 vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to Figure 84. IDQ vs. Supply Voltage, RBIAS = 90.9 Ω Figure 85. IDQ vs. Bias Resistor Value, VDD = 5 V

inductor. Figure 86 shows a simplified schematic. connect an external resistor between the RBIAS and VDD pins. Figure 86. Simplified Schematic

configuration used to characterize and qualify the ADL8104. Figure 87. Typical Application Circuit Table 9. Recommended Bias Resistor Values

0.05 MAX

0.02 NOM

0.20 REF

0.20 MIN

Figure 88. 16-Lead Lead Frame Chip Scale Package [LFCSP] 1 The ADL8104ACPZN, ADL8104ACPZN-R7, and ADL8104-EVALZ are RoHS compliant parts. 2 When ordering the evaluation board only, reference the model number, ADL8104-EVALZ. 3 See the Absolute Maximum Ratings section for additional information. 4 The lead finish of the ADL8104ACPZN and ADL8104ACPZN-R7 is nickel palladium gold (NiPdAu). registered trademarks are the p roperty of their respective owners.