ADL8100

ADL8100 (Rev.A)

Document overview

• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 27

Technical content

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz Rev. A DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. All Analog Devices products contained herein are subject to release and availability.

FEATURES

►Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz ►Single positive supply (self biased) ►High gain: 20 dB typical from 0.01 GHz to 6 GHz ►High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz ►RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

APPLICATIONS

►Satellite communication ►Telecommunications ►Civilian radars ►Military radars ►Weather radars ►Electronic warfare GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that oper- ates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at

6 GHz to 14 GHz, and a typical output third-order intercept (OIP3)

of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power. The ADL8100 also features inputs and outputs that are DC-coupled and internally matched to 50 Ω. The ADL8100 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP. FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram

analog.com Rev. A | 2 of 27

REVISION HISTORY

6/2025—Rev. 0 to Rev. A 7/2023—Revision 0: Initial Version

0.01 GHZ TO 6 GHZ FREQUENCY RANGE

Supply voltage (VDD) = 5 V, quiescent current (IDQ) = 220 mA, bias resistance (RBIAS) = 560 Ω, and TC = 25°C, unless otherwise noted. Table 1. 0.01 GHz to 6 GHz Frequency Range

6 GHZ TO 14 GHZ FREQUENCY RANGE

VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω, and TC = 25°C, unless otherwise noted. Table 2. 6 GHz to 14 GHz Frequency Range

14 GHZ TO 20 GHZ FREQUENCY RANGE

VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω, and TC = 25°C, unless otherwise noted. Table 3. 14 GHz to 20 GHz Frequency Range Table 4. DC Specifications

Table 5. Absolute Maximum Ratings ing conditions for extended periods may affect product reliability. θJC is the channel to case thermal resistance. Table 6. Thermal Resistance1 1 Thermal resistance varies with operating conditions. 2 Worst case across all specified operating conditions. sitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Table 7. ADL8100, 8-Lead LFCSP damage may occur on devices subjected to high energy ESD. performance degradation or loss of functionality.

Figure 7. Gain and Return Loss vs. Frequency, 10 MHz to 1 GHz, VDD = 5 V, Figure 8. Gain vs. Frequency for Various Temperatures, 10 MHz to 1 GHz, Figure 9. Gain vs. Frequency for Various Supply Voltages and IDQ Values,

10 MHz to 1 GHz, RBIAS = 560 Ω

Figure 10. Gain and Return Loss vs. Frequency, 1 GHz to 22 GHz, VDD = 5 V, Figure 11. Gain vs. Frequency for Various Temperatures, 1 GHz to 22 GHz, Figure 12. Gain vs. Frequency for Various Supply Voltages and IDQ Values,

1 GHz to 22 GHz, RBIAS = 560 Ω

Figure 13. Gain vs. Frequency for Various IDQ and RBIAS Values,

10 MHz to 1 GHz, VDD = 5 V

Figure 14. Input Return Loss vs. Frequency for Various Temperatures,

10 MHz to 1 GHz, VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω

Figure 15. Input Return Loss vs. Frequency for Various Supply Voltages and Figure 16. Gain vs. Frequency for Various IDQ and RBIAS Values,

1 GHz to 22 GHz, VDD = 5 V

Figure 17. Input Return Loss vs. Frequency for Various Temperatures,

1 GHz to 22 GHz, VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω

Figure 18. Input Return Loss vs. Frequency for Various Supply Voltages and

Figure 19. Input Return Loss vs. Frequency for Various IDQ and RBIAS Values, Figure 20. Output Return Loss vs. Frequency for Various Temperatures, Figure 21. Output Return Loss vs. Frequency for Various Supply Voltages Figure 22. Input Return Loss vs. Frequency for Various IDQ and RBIAS Values, Figure 23. Output Return Loss vs. Frequency for Various Temperatures, Figure 24. Output Return Loss vs. Frequency for Various Supply Voltages

Figure 25. Output Return Loss vs. Frequency for Various IDQ and RBIAS Figure 26. Reverse Isolation vs. Frequency for Various Temperatures, 10 MHz Figure 27. Reverse Isolation vs. Frequency for Various Supply Voltages and Figure 28. Output Return Loss vs. Frequency for Various IDQ and RBIAS Figure 29. Reverse Isolation vs. Frequency for Various Temperatures, Figure 30. Reverse Isolation vs. Frequency for Various Supply Voltages and

Figure 31. Reverse Isolation vs. Frequency for Various IDQ and RBIAS Values, Figure 32. Noise Figure vs. Frequency for Various Temperatures, Figure 33. Noise Figure vs. Frequency for Various Supply Voltages and IDQ Figure 34. Reverse Isolation vs. Frequency for Various IDQ and RBIAS Values, Figure 35. Noise Figure vs. Frequency for Various Temperatures, Figure 36. Noise Figure vs. Frequency for Various Supply Voltages and IDQ

Figure 37. Noise Figure vs. Frequency for Various IDQ and RBIAS Values, Figure 38. OP1dB vs. Frequency for Various Temperatures, 10 MHz to 2 GHz, Figure 39. OP1dB vs. Frequency for Various Supply Voltages and IDQ Values,

10 MHz to 2 GHz, RBIAS = 560 Ω

Figure 40. Noise Figure vs. Frequency for Various IDQ and RBIAS Values, Figure 41. OP1dB vs. Frequency for Various Temperatures, 2 GHz to 22 GHz, Figure 42. OP1dB vs. Frequency for Various Supply Voltages and IDQ Values,

2 GHz to 22 GHz, RBIAS = 560 Ω

Figure 43. OP1dB vs. Frequency for Various IDQ and RBIAS Values,

10 MHz to 2 GHz, VDD = 5 V

Figure 44. PSAT vs. Frequency for Various Temperatures, 10 MHz to 2 GHz, Figure 45. PSAT vs. Frequency for Various Supply Voltages and IDQ Values, Figure 46. OP1dB vs. Frequency for Various IDQ and RBIAS Values,

2 GHz to 22 GHz, VDD = 5 V

Figure 47. PSAT vs. Frequency for Various Temperatures, 2 GHz to 22 GHz, Figure 48. PSAT vs. Frequency for Various Supply Voltages and IDQ Values,

Figure 49. PSAT vs. Frequency for Various IDQ and RBIAS Values, Figure 50. PAE Measured at PSAT vs. Frequency for Various Temperatures,

10 MHz to 2 GHz, VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω

Figure 51. PAE Measured at PSAT vs. Frequency for Various Supply Voltages Figure 52. PSAT vs. Frequency for Various IDQ and RBIAS Values, Figure 53. PAE Measured at PSAT vs. Frequency for Various Temperatures,

2 GHz to 22 GHz, VDD = 5 V, IDQ = 220 mA, RBIAS = 560 Ω

Figure 54. PAE Measured at PSAT vs. Frequency for Various Supply Voltages

Figure 61. PDISS vs. PIN at Various Frequencies at 85°C, VDD = 5 V, Figure 62. OIP3 vs. Frequency for Various Temperatures, 10 MHz to 2 GHz, Figure 63. OIP3 vs. Frequency for Various Supply Voltages and IDQ Values, Figure 64. IDD vs. PIN at Various Frequencies, VDD = 5 V Figure 65. OIP3 vs. Frequency for Various Temperatures, 2 GHz to 22 GHz, Figure 66. OIP3 vs. Frequency for Various Supply Voltages and IDQ Values,

Figure 67. OIP3 vs. Frequency for Various IDQ and RBIAS Values, Figure 68. OIP2 vs. Frequency for Various Temperatures, 10 MHz to 2 GHz, Figure 69. OIP2 vs. Frequency for Various Supply Voltages and IDQ Values, Figure 70. OIP3 vs. Frequency for Various IDQ and RBIAS Values, Figure 71. OIP2 vs. Frequency for Various Temperatures, 2 GHz to 22 GHz, Figure 72. OIP2 vs. Frequency for Various Supply Voltages and IDQ Values,

Figure 73. OIP2 vs. Frequency for Various IDQ and RBIAS Values, Figure 74. Third-Order Intermodulation (IM3) vs. POUT per Tone at Various Figure 75. IM3 vs. POUT per Tone at Various Frequencies, VDD = 5 V, Figure 76. OIP2 vs. Frequency for Various IDQ and RBIAS Values, Figure 77. IM3 vs. POUT per Tone at Various Frequencies, VDD = 4 V, Figure 78. IM3 vs. POUT per Tone at Various Frequencies, VDD = 6 V,

Figure 84. Gain and Return Loss vs. Frequency, 10 MHz to 1 GHz, VDD = 5 V, Figure 85. Gain vs. Frequency for Various Temperatures, 10 MHz to 1 GHz, Figure 86. Input Return Loss vs. Frequency for Various Temperatures, Figure 87. Gain and Return Loss vs. Frequency, 1 GHz to 22 GHz, VDD = 5 V, Figure 88. Gain vs. Frequency for Various Temperatures, 1 GHz to 22 GHz, Figure 89. Input Return Loss vs. Frequency for Various Temperatures,

Figure 90. Output Return Loss vs. Frequency for Various Temperatures, Figure 91. Reverse Isolation vs. Frequency for Various Temperatures, Figure 92. Noise Figure vs. Frequency for Various Temperatures, Figure 93. Output Return Loss vs. Frequency for Various Temperatures, Figure 94. Reverse Isolation vs. Frequency for Various Temperatures, Figure 95. Noise Figure vs. Frequency for Various Temperatures,

pins are DC-coupled and matched to 50 Ω. Figure 104. Simplified Schematic

©2023-2025 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. One Analog Way, Wilmington, MA 01887-2356, U.S.A. Rev. A | 27 of 27 Package Drawing (Option) Package Type Package Description CP-8-30 LFCSP 8-Lead Lead Frame Chip Scale Package For the latest package outline information and land patterns (footprints), go to Package Index. ORDERING GUIDE Model1, 2 Temperature Range Package Description Packing Quantity Package Option ADL8100ACPZN −40°C to +85°C 8-Lead Lead Frame Chip Scale Package [LFCSP]Tape, 500 CP-8-30 ADL8100ACPZN-R7 −40°C to +85°C 8-Lead Lead Frame Chip Scale Package [LFCSP]Reel, 500 CP-8-30 1 Z = RoHS Compliant Part. 2 The lead finish of the ADL8100ACPZN and the ADL8100ACPZN-R7 is nickel palladium gold. Updated: June 21, 2023 EVALUATION BOARDS Model1 Description ADL8100-EVALZ Evaluation Board ADL8100-EVAL1Z Evaluation Board with Bias Tee 1 Z = RoHS Compliant Part.