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2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier Data Sheet ADL5321 Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2008–2012 Analog Devices, Inc. All rights reserved.
FEATURES
Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V Power supply current: 37 mA to 90 mA Dynamically adjustable bias No bias resistor required Thermally efficient, MSL-1 rated SOT-89 package Operating temperature range: −40°C to +105°C ESD rating of ±2 kV (Class 3A)
APPLICATIONS
Figure 1. ISM/AMR applications GENERAL DESCRIPTION The ADL5321 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V without the need for an external bias resistor. This feature gives the designer the ability to tailor driver amplifier performance to the specific needs of the design. This feature also creates the opportunity for dynamic biasing of the driver amplifier, where a variable supply is used to allow for full 5 V biasing under large signal conditions and then can reduce the supply voltage when signal levels are smaller and lower power consumption is desirable. This scalability reduces the need to evaluate and inventory multiple driver amplifiers for different output power requirements from 22 dBm to 26 dBm output power levels. The ADL5321 is also rated to operate across the wide temper- ature range of −40°C to +105°C for reliable performance in designs that experience higher temperatures, such as power amplifiers. The 1∕4 watt driver amplifier covers the 2.3 GHz to
4.0 GHz wide frequency range and only requires a few external
components to be tuned to a specific band within that wide range. This high performance, broadband RF driver amplifier is well suited for a variety of wired and wireless applications including cellular infrastructure, ISM band power amplifiers, defense equipment, and instrumentation equipment. A fully populated evaluation board is available. The ADL5321 also delivers excellent adjacent channel leakage ratio (ACLR) vs. P OUT. For output powers up to 10 dBm rms, the ADL5321 adds very little distortion to the output spectrum. At
2.6 GHz, the ACLR is −59 dB and a relative constellation error of
−46.6 dB (<0.5% EVM) at an output power of 10 dBm rms. Figure 2. WiMAX 64 QAM, 10 MHz Bandwidth, Single Carrier
Rev. C | Page 2 of 16 TABLE OF CONTENTS Soldering Information and Recommended PCB Land
REVISION HISTORY
7/12—Rev. B to Rev. C Moved High Temperature and 3.3 V Operation Section and added Changes to Soldering Information and Recommended PCB 6/10—Rev. A to Rev. B Added High Temperature Operation Section, Figure 27, Figure 28, 2/09—Rev. 0 to Rev. A 5/08—Revision 0: Initial Version
Rev. C | Page 3 of 16 SPECIFICATIONS TA = 25°C, unless otherwise noted. Table 1.
3.3 V 5 V
Parameter Conditions Min Typ Max Min Typ Max Unit OVERALL FUNCTION Frequency Range 2.3 4.0 2.3 4.0 GHz FREQUENCY = 2.6 GHz Gain1 12.6 13.2 14.0 14.6 dB vs. Frequency ±100 MHz ±0.3 ±0.4 dB vs. Temperature −40°C ≤ TA ≤ +85°C ±0.6 ±0.7 dB Output 1 dB Compression Point, P1dB 22.0 25.7 dBm Output Third-Order Intercept, OIP3 Δf = 1 MHz, POUT = 5 dBm per tone 31 41 dBm Noise Figure 3.5 4.0 dB FREQUENCY = 3.5 GHz Gain1 10.4 11.1 12.0 12.9 dB vs. Frequency ±100 MHz ±0.17 ±0.05 dB vs. Temperature −40°C ≤ TA ≤ +85°C ±0.7 ±0.8 dB Output 1 dB Compression Point, P1dB 24.7 25.7 dBm Output Third-Order Intercept, OIP3 Δf = 1 MHz, POUT = 5 dBm per tone 27 38 dBm Noise Figure 4.3 4.9 dB POWER INTERFACE Pin RFOUT Supply Voltage 3.3 4.5 5 5.5 V Supply Current 37 90 100 mA vs. Temperature −40°C ≤ TA ≤ +85°C ±4.0 ±6.0 mA Power Dissipation VCC = 3.3 V, VCC = 5 V 122 520 mW 1 Guaranteed maximum and minimum specified limits on this parameter are based on six sigma calculations.
Rev. C | Page 4 of 16 TYPICAL SCATTERING PARAMETERS VCC = 5 V and TA = 25°C; the effects of the test fixture have been de-embedded up to the pins of the device. Table 2. Frequency (MHz) S11 S21 S12 S22 Magnitude (dB) Angle (°) Magnitude (dB) Angle (°) Magnitude (dB) Angle (°) Magnitude (dB) Angle (°)
junction-to-paddle thermal resistance (θJC) for the ADL5321. Table 4. Thermal Resistance
2 Unit
2 Based on simulation with JEDEC standard JESD51.
Figure 3. Pin Configuration Table 5. Pin Function Descriptions 1 RFIN RF Input. This pin requires a dc blocking capacitor. 2 GND Ground. Connect this pin to a low impedance ground plane. to the external power supply. RF path requires a dc blocking capacitor. Exposed Paddle Expose Paddle. Internally connected to GND. Solder to a low impedance ground plane.
Table 8. Load Conditions for GainMAX Table 9. Load Conditions for OIP3MAX signal source used (−63 dB at 2.6 GHz and −60 dB at 3.5 GHz). measured ACLR is −69 dB for an output power of −10 dBm. at an output power of 10 dBm rms. Figure 33. ACLR vs. POUT, WiMAX 64 QAM, 10 MHz Bandwidth, Single Carrier Figure 34. RCE/EVM vs. POUT, WiMAX 64 QAM, 10 MHz Bandwidth, Single Carrier
2.6 GHz
3.5 GHz
Figure 38. 3-Lead Small Outline Transistor Package [SOT-89] EXCEPTION OF DIMENSIONS INDICATED BY AN ASTERISK.
1.50 TYP
3.00 TYP
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