ADH814S AD | Alldatasheet
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Technical content
13 to 24.6 GHz Output x2 Active Frequency Multiplier ADH814S ASD0016611 Rev. A Information fu rnished by Analo g D evices is be lieved to be accurate an d reliable. However, no responsib ility is assumed by Analog Devices for its use, nor for any infringements of pa tents or other rights of third parties that ma y result from its use. Specifications subject to change wit hout notice. No license is granted by i mplication or o therwise under any patent or patent rights o f Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Analog Way, Wilmington, MA 01887, U.S.A. Tel: 781.935.5565 www.analog.com Fax: 800.262.5643 © 2023 Analog Devices, Inc. All rights reserved.
1.0 SCOPE
This specification documents the detail requirements for space qualified die per MIL -PRF-38534 class K except as modified herein. The manufacturing flow described in the SPACE DIE BROCHURE is to be considered a part of this specification. This datasheet specifically details the space grade version of this product. A more detailed operational description and a complete datasheet for commercial product grades can be found at https://www.analog.com/hmc814-die
2.0 Part Number:
The complete part number(s) of this specification follows: Specific Part Number Description ADH814-000C 13 to 24.6 GHz Output GaAs PHEMT MMIC x2 Active Frequency Multiplier
3.0 Die Information
3.1. Die Dimensions Die Size Die Thickness Bond Pad and Backside Metallization 45.6 mils x 44.5 mils 4 mils Au 3.2. Die Picture 1. RFIN 2. Vdd1 3. Vdd2 4. RFOUT Die bottom is GND
ASD0016611 Rev. A | Page 2 of 8 3.3. Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN Pad is AC coupled and matched to 50 Ohms. 2, 3 Vdd1, Vdd2 Supply Voltage (+5 V ± 0.5 V) External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are recommended on each pad. 4 RFOUT Pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground.
4.0 Specifications
4.1. Absolute Maximum Ratings 1/
4.2 Recommended Operating Conditions
4.3 Nominal Operating Performance Characteristics 2/
ASD0016611 Rev. A | Page 3 of 8
4.4 Nominal Isolation Performance Characteristics 3/
1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ All specifications apply with TA = 25 °C, Vdd1 = Vdd2 = +5 Vdc, +4 dBm Drive Level and RFOUT Frequency Range = 13 GHz to 24.6 GHz only, unless otherwise noted. 3/ All specifications apply with TA = 25 °C, Vdd1 = Vdd2 = +3.5 Vdc, +4 dBm Drive Level and RFOUT Frequency Range = 13 GHz to 24.6 GHz only.
5.0 Die Qualification
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Pre-screen test post assembly required prior to die qualification, to remove all assembly related rejects. (b) Mechanical Shock or Constant Acceleration not performed. (c) Interim and post burn-in electrical tests will include tests screened at +25 °C only.
6.0 Dice Electrical Characteristics
TABLE I – DIE ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions 1/2/ Unless otherwise specified Limits Unit Min Max Output Power POUT 14 dBm Supply Current (Idd1 + Idd2) Idd No Drive level applied at RFIN 100 mA TABLE I Notes: 1/ Limits apply at TA = +25 °C only with Vdd1 = Vdd2 = +5 Vdc and +4 dBm Drive level. 2/ Parameters measured at FOUT = 14 GHz and 24.6 GHz only. TABLE II – ELECTRICAL CHARACTERISTICS FOR QUALIFICATION SAMPLES Parameter Symbol Conditions 1/2/3/ Unless otherwise specified Sub- Group Limits Unit Min Max Output Power POUT 4 14 dBm 5, 6 10 dBm Supply Current (Idd1 + Idd2) Idd No Drive level applied at RFIN 1, 2, 3 100 mA TABLE II Notes: 1/ TA Nom = +25 ºC, TA Max = +85 ºC, TA Min = -40 ºC. 2/ Vdd1 = Vdd2 = +5 Vdc and +5.5 dBm Drive level. Additional drive level needed due to fixure loss. 3/ Parameters measured at FOUT = 14 GHz and 24.6 GHz only. 4/ See ML-PRF-38534 Table C-Xa for Sub-Group parameter definitions.
ASD0016611 Rev. A | Page 4 of 8 TABLE III – BURN-IN/LIFE TEST DELTA LIMITS 1/2/3/4/ Parameter Symbol Delta Unit Output Power POUT ± 1 dB Supply Current (Idd1 + Idd2) Idd ± 10 % TABLE III Notes: 1/ 240 hour burn-in and 1000 hour life test end point electrical parameters. 2/ Deltas are performed at TA = +25 °C only. 3/ Product is tested in accordance with conditions in Table II. 4/ Table II limits shall not be exceeded.
ASD0016611 Rev. A | Page 5 of 8
7.0 Die Outline
8.0 Application Notes
length < 0.31 mm ( < 12 mils) is recommended to minimize inductance on the RF ports. Figure 1. Assembly Diagram Figure 2. Die without Moly Tab Figure 3. Die with Moly Tab
ASD0016611 Rev. A | Page 8 of 8 Die Packaging Information Standard Alternate GP-2 (Gel Pack) 1/ Note: 1/ For alternate packaging information, contact Analog Devices Inc.
Revision History
Rev Description of Change Date A Initial Production Release 4-Jan-2023 © 20 23 Analog D evices, Inc . A ll rights reserved. Trademarks and registered trademarks are th e property of their resp ective companies. Printed in the U.S.A. 01/23