ADH561S (Rev. A)
Document overview
- Manufacturer or author: Analog Devices, Inc.
- PDF pages: 8
Technical content
x2 Active Frequency Multiplier ADH561S ASD0016612 Rev. A Information fu rnished by Analo g Devices is b elieved to be accurate an d reliable . However, no responsi bility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may re sult from its use. Specifications subject to change without notice. No license is granted by implication or otherwise un der an y patent or patent rig hts of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Analog Way, Wilmington, MA 01887, U.S.A. Tel: 781.935.5565 www.analog.com Fax: 800.262.5643 © 2023 Analog Devices, Inc. All rights reserved.
1.0 SCOPE
This specification documents the detail requirements for space qualified die per MIL- PRF-38534 class K except as modified herein. The manufacturing flow described in the SPACE DIE BROCHURE is to be considered a part of this specification. This datasheet specifically details the space grade version of this product. A more detailed operational description and a complete datasheet for commercial product grades can be found at https://www.analog.com/hmc561-die.
2.0 Part Number:
The complete part number(s) of this specification follows: Specific Part Number Description ADH561-000C 8 to 21 GHz Output GaAs PHEMT MMIC x2 Active Frequency Multiplier
3.0 Die Information
3.1. Die Dimensions Die Size Die Thickness Bond Pad and Backside Metallization 34.2 mils x 60.2 mils 4 mils Au 3.2. Die Picture 1. GND 2. RFIN 3. Vgg 4. Vdd1 5. Vdd2 6. RFOUT 7. GND Die bottom is GND
ASD0016612 Rev. A | Page 2 of 8 3.3. Pad Descriptions Pad Number Function Description Interface Schematic 2 RFIN Pad is AC coupled and matched to 50 Ohms. 3 Vgg Gain Control to the Amplifier. Adjust to Idd1 + Idd2 = 98 mA (Typ.) 4, 5 Vdd1, Vdd2 Supply Voltage (+5 V ± 0.5 V) External bypass capacitors of 100 pF and 0.1 µF are recommended on each pad. 6 RFOUT Pad is AC coupled and matched to 50 Ohms. 1, 7, Die Bottom GND These pads and Die bottom must be connected to RF/DC ground.
4.0 Specifications
4.1. Absolute Maximum Ratings 1/
4.2 Recommended Operating Conditions
ASD0016612 Rev. A | Page 3 of 8
4.3 Nominal Operating Performance Characteristics 2/
4.4 Nominal Isolation Performance Characteristics 4/
1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ All specifications apply with TA = 25 °C, Vdd1 = Vdd2 = +5 Vdc, +5 dBm Drive Level, Idd (Idd1 +Idd2) = 98 mA, and RFOUT Frequency Range = 8 GHz to 21 GHz only, unless otherwise noted. 3/ Output Frequency = 16 GHz. 4/ All specifications apply with TA = 25 °C, Vdd1 = Vdd2 = +3.5 Vdc, +5 dBm Drive Level, Idd (Idd1 + Idd2) = 98 mA, and RFOUT Frequency Range = 8 GHz to 21 GHz only.
5.0 Die Qualification
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Pre-screen test post assembly required prior to die qualification, to remove all assembly related rejects. (b) Mechanical Shock or Constant Acceleration not performed. (c) Interim and post burn-in electrical tests will include tests screened at +25 °C only.
6.0 Dice Electrical Characteristics
TABLE I – DIE ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions 1/2/3/ Unless otherwise specified Limits Unit Min Max Output Power POUT 14 dBm Supply Current (Idd1 + Idd2) Idd No Drive level applied at RFIN 126 mA TABLE I Notes: 1/ Limits apply at TA = +25 °C only with Vdd1 = Vdd2 = +5 Vdc and +5 dBm Drive level. 2/ Parameters measured at FOUT = 8 GHz, 14.5 GHz and 21 GHz only. 3/ Adjust Vgg between -2 Vdc and -1.2 Vdc to achieve Idd (Idd1 + Idd2) = 98 mA.
ASD0016612 Rev. A | Page 4 of 8 TABLE II – ELECTRICAL CHARACTERISTICS FOR QUALIFICATION SAMPLES Parameter Symbol Conditions 1/2/3/4/ Unless otherwise specified Sub- Group Limits Unit Min Max Output Power POUT FOUT = 8 GHz, 14.5 GHz, 21 GHz 4, 6 14 dBm FOUT = 8 GHz, 21 GHz 5 11.5 dBm FOUT = 14.5 GHz 5 12.5 dBm Supply Current (Idd1 + Idd2) Idd No Drive level applied at RFIN 1, 2, 3 126 mA TABLE II Notes: 1/ TA Nom = +25 ºC, TA Max = +85 ºC, TA Min = -40 ºC. 2/ Vdd1 = Vdd2 = +5 Vdc and +5 dBm Drive level. 3/ Parameters measured at FOUT = 8 GHz, 14.5 GHz and 21 GHz only. 4/ Vgg adjusted between -2 Vdc and -1.2 Vdc to achieve Idd (Idd1 + Idd2) = 98 mA typical at TA nom, TA max, and TA min. 5/ See ML-PRF-38534 Table C-Xa for Sub-Group parameter definitions. TABLE III – BURN-IN/LIFE TEST DELTA LIMITS 1/2/3/4/5/ Parameter Symbol Delta Unit Output Power POUT ± 1 dB Supply Current (Idd1 + Idd2) Idd ± 10 % TABLE III Notes: 1/ 240 hour burn-in and 1000 hour life test end point electrical parameters. 2/ Deltas are performed at TA = +25 °C only. 3/ Product is tested in accordance with conditions in Table II. 4/ Table II limits shall not be exceeded. 5/ Vgg voltage set at pre burn-in value for each device.
ASD0016612 Rev. A | Page 5 of 8
7.0 Die Outline
8.0 Application Notes
length. Typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). Figure 1. Assembly Diagram Figure 2. Die without Moly Tab Figure 3. Die with Moly Tab
ASD0016612 Rev. A | Page 8 of 8 Die Packaging Information Standard Alternate GP-2 (Gel Pack) 1/ Note: 1/ For alternate packaging information, contact Analog Devices Inc.
Revision History
Rev Description of Change Date A Initial Production Release 29-Mar-2023 © 2023 Analog D evices, Inc . A ll rights reserved. Trademarks and registered trademarks are the property of t heir respective companies. Printed in the U.S.A. 03/23