ADH519S

ADH519S (Rev. B)

Document overview

• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 8

Technical content

17.5 GHz – 31.5 GHz Low Noise Amplifier ADH519S ASD0016589B Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2022 Analog Devices, Inc. All rights reserved.

1.0 SCOPE

This specification documents the detail requirements for an internally defined equivalent flow per MIL -PRF-38535 Level V except as modified herein. The manufacturing flow described in the ADI RF & MICROWAVE STANDARD SPACE LEVEL PRODUCTS PROGRAM is to be considered a part of this specification. This data specifically details the space grade version of this product. A more detailed operational description and a complete data sheet for commercial product grades can be found at http://www.analog.com/HMC519LC4

2.0 Part Number: The complete part number(s) of this specification follows:

Specific Part Number Description ADH519R701LSH6 GaAs pHEMT Low Noise Amplifier, 17.5 GHz – 31.5 GHz

3.0 Case Outline

The case outline is as follows: Outline Letter Descriptive Designator Terminals Lead Finish Package style X EH-16-2 16 Lead Gold Ceramic Hermetic SMT (LSH6) FUNCTIONAL BLOCK DIAGRAM Figure 1 – Functional Block Diagram

ASD0016589 Rev. B | Page 2 of 8 Package: X 1/ Pin Number Terminal Symbol Pin Type Pin Description

1 VDD3 Power Supply Voltage

2 VDD2 Power Supply Voltage

3 VDD1 Power Supply Voltage

4 GND Power Ground

5 GND Power Ground

6 RF IN RF I/O RF IN 2/

7 GND Power Ground

8 GND Power Ground

9 GND Power Ground

10 GND Power Ground

11 GND Power Ground

12 GND Power Ground

13 GND Power Ground

14 RF OUT RF I/O RF OUT 2/

15 GND Power Ground

16 GND Power Ground

Package Base GND Power Ground Package Lid GND Power Package lid is connected to RF/DC ground Figure 2 – Terminal Connections 1/ The package base has an exposed metal pad that must connect the printed circuit board (PCB) RF/DC ground. 2/ This pin is DC blocked and internally matched to 50 ohms.

ASD0016589 Rev.B | Page 3 of 8

4.0 Specifications

4.1. Absolute Maximum Ratings 1/ (derate 19 mW/°C above 85 °C) 4.2. Recommended Operating Conditions Ambient Operating Temperature Range (TA)………………………… . -40°C to +85°C 4.3. Nominal Operating Performance Characteristics 3/ 4.4. Radiation Features Maximum Total Dose Available (dose rate = 50 – 300 rads (Si)/s)…. 100K rads (Si) 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ Frequency = 17.5 GHz - 31.5 GHz 3/ All typical specifications are at TA = 25°C, VDD1 = VDD2, = VDD3 = 3V, unless otherwise noted.

ASD0016589 Rev. B | Page 4 of 8 TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Parameter See notes at end of table Symbol Conditions 1/ Unless otherwise specified Group A Subgroups Limits Units Min Max RF CHARACTERISTICS Gain S21 17.5 GHz 4 11.8 dB 5,6 10.5 M,D,P,L,R 4 11.8

28.5 GHz 4 11

5,6 10 M,D,P,L,R 4 11 31.5 GHz 4 10.5 5,6 9.5 M,D,P,L,R 4 10.5 Gain Variation Over Temp 2/ 3/ S21 / °C 17.5 GHz 4,5,6 0.026 dB/°C 28.5 GHz 4,5,6 0.026 31.5 GHz 4,5,6 0.026 Noise Figure NF 17.5 GHz 4 4 dB 5,6 4.5 M,D,P,L,R 4 4

28.5 GHz 4 4

5,6 4.5 M,D,P,L,R 4 4 31.5 GHz 4 4.5 5,6 5 M,D,P,L,R 4 4.5 Output Power for 1dB Compression 2/ 3/ 5/ OP1dB 17.5 GHz 4 7.2 dBm 5 6.5 6 8.5 28.5 GHz 4 7.2 5 6.5 6 8.5 31.5 GHz 4 8.5 5 8 6 9.5 Output Third Order Intercept 2/ 3/ 6/ OIP3 17.5 GHz 4 17.2 dBm 5 16 6 19 28.5 GHz 4 17.2 5 16 6 19 31.5 GHz 4 19.2 5 17.5 6 20.5 BIAS AND SUPPLY CURRENT Supply Current 4/ IDD 1,2,3 95 mA M,D,P,L,R 1 95 mA TABLE I NOTES: 1/ TA nom = 25ºC, TA max = 85ºC, and TA min = -40ºC unless otherwise noted, VDD1 = VDD2, = VDD3 = +3V 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. 3/ Parameter is not tested post irradiation 4/ Supply current measured with no signal at RF IN. 5/ Input power sweep -5 dBm to 10 dBm 6/ f1 power = f2 power = -5 dBm, Fixed Delta F = 1 MHz

ASD0016589 Rev.B | Page 5 of 8 TABLE IIA – ELECTRICAL TEST REQUIREMENTS: Test Requirements Subgroups (in accordance with MIL-PRF-38535, Table III) Interim Electrical Parameters 1, 4 Final Electrical Parameters 1, 4 1/ 2/ Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C end-point electrical parameters 1, 4 2/ Group D end-point electrical parameters 1, 4 Group E end-point electrical parameters 1, 4 3/ Table IIA Notes: 1/ PDA applies to Table I subgroup 1 and Table IIB delta parameters. 2/ See Table IIB for delta parameters 3/ Parameters noted in Table I are not tested post irradiation. TABLE IIB – BURN-IN / LIFE TEST DELTA LIMITS 1/ 2/ 3/ Parameter Symbol Delta Units Gain at 17.5 GHz S21 ±1.0 dB Gain at 28.5 GHz S21 ±1.5 dB Gain at 31.5 GHz S21 ±1.5 dB Supply Current IDD ±10 % Table IIB Notes: 1/ 240 hour burn in and 1000 hour life test (group C) end point electrical parameters. 2/ Deltas are performed at room temperature TA = +25°C only. 3/ Deltas apply with VDD1 = VDD2 = VDD3 = 3.0V unless otherwise noted

ASD0016589 Rev. B | Page 6 of 8

5.0 Burn-In Life Test, and Radiation

5.1. Burn-In Test Circuit, Life Test Circuit 5.1.1. The test conditions and circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 test condition B of MIL –STD-883. 5.1.2. HTRB is not applicable for this drawing. 5.2. Radiation Exposure Circuit 5.2.1. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A. 5.2.2. ADH519S have been characterized through all levels M, D, P, L, R of irradiation. However, ADH519S is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table IA.

6.0 MIL-PRF-38535 QMLV Exceptions

The manufacturing flow described in the RF & MICROWAVE STANDARD SPACE LEVEL PRODUCTS PROGRAM is to be considered a part of this specification. The brochure describes standard QMLV exceptions for Aerospace products run at the ADI Chelmsford, MA facility. 6.1. Wafer Fabrication Foundry information is available on request. 6.2. Group D Group D-5 Salt Atmosphere testing is not being performed.

ASD0016589 Rev.B | Page 7 of 8

7.0 Application Circuit

Figure 3 – Application Circuit

8.0 Package Outline Dimensions

The LSH6 package and outline dimensions can be found at http://www.analog.com or upon request.

ASD0016589 Rev. B | Page 8 of 8 ORDERING GUIDE

Revision History

Rev Description of Change Date A Initial Release 2/14/2020 B Update table IIB and Section 5.1.1 5/23/2022 Model Temperature Range Package Description Package Option ADH519R701LSH6 –40°C to +85°C 16 Lead Ceramic Leadless SMT LSH6 (EH-16-2) © 2022 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. Printed in the U.S.A. 05/22