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SP4T No n -Reflective Switch ADH244S ASD0016609 Rev. A Information furnished by Analog Devices is beli eved t o be accurate and reliable. However, n o re sponsibility is assumed by Analog Devices for its u se, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No l icense is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tr ademarks and registered trademarks are the property of their respective companies. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2021 Analog Devices, Inc. All rights reserved.
1.0 SCOPE
This specification documents the detail requirements for an internally defined equivalent flow per MIL-PRF-38535 Level V except as modified herein. T he manufacturing flow described in the RF & MICROWAVE STANDARD SPACE LEVEL PRODUCTS PROGRAM brochure is to be considered a part of this specification. T his data specifically details the space grade version of this product. A more detailed operational description and a complete data sheet for commercial product grades can be found at https://www.analog.com/HMC244
2.0 Part Number
The complete part number(s) of this specification follows: Specific Part Number Description ADH244-701G16 GaAs MMIC SP4T Non-Reflective Switch, DC – 4 GHz
3.0 Case Outline
The case outline is as follows: Outline Letter Descriptive Designator Terminals Lead Finish Package style X FR-16-2 16 Lead Gold Glass/Metal Hermetic Leaded SMT (G16) PACKAGE BOTTOM F igure 1 – Functional Block Diagram
ASD0016609 Rev. A | Page 2 of 7 Package: X Pin Number Terminal Symbol Pin Type Pin Description Interface Schematic
1 GND Power RF/DC Ground 1/
2 RF4 RF Output This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required
3 GND Power RF/DC Ground 1/
4 RF3 RF Output This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required
5 GND Power RF/DC Ground 1/
6 VDD Power Supply Voltage. Typical: +5.0 Vdc ± 10%
7 B Power Control Inputs
e Truth Table (Table III) and TTL/CMOS Control Voltages Table (Table IV)
8 A Power
9 RF2 RF Output This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required
10 GND Power RF/DC Ground 1/
11 RF1 RF Output This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required
12 GND Power
13 GND Power
14 GND Power
15 RFC RF Input This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required
16 GND Power
Lid N IC No Internal Connection. Package Lid is not connected to RF/DC Ground F igure 2 – Terminal Connections 1/ The package bottom has an exposed metal paddle that must also be connected to RF/DC ground.
ASD0016609 Rev. A | Page 3 of 7
4.0 Specifications
4.1. Absolute Maximum Ratings 1/ Maximum Input Power (VDD = +5 Vdc & 0.05 GHz – 0.5 GHz) ……………………. +20 dBm Maximum Input Power (VDD = +5 Vdc & 0.5 GHz – 4 GHz) …………………...…… +27 dBm 4.2. Recommended Operating Conditions 4.3. Nominal Operating Performance Characteristics 2/ tON, tOFF (50% A/B to 10/90% RF) (DC – 4.0 GHz) ……………………………… . 150 ns 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ All typical specifications apply at TA = 25 °C with VDD = +5.0 V and A & B Control Input Voltage Low = 0 V, High = +5.0 V unless otherwise noted.
ASD0016609 Rev. A | Page 4 of 7 TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Parameter See notes at end of table Symbol Conditions 1/ Unless otherwise specified Group A Subgroups Limits Units Min Max Frequency = 0.1 GHz Continuous Wave (CW) Input Insertion Loss IL RFC PIN = -25 dBm 4, 5, 6 1.1 dB Isolation ISO 4, 5, 6 40 dB Input Power for 1dB Compression 2/ IP1dB 7, 8A, 8B 21 dBm Frequency = 0.5 GHz Continuous Wave (CW) Input Input Third Order Intercept 3/4/ IIP3 4 43 dBm Frequency = 2.0 GHz Continuous Wave (CW) Input Insertion Loss IL RFC PIN = -25 dBm 4, 5, 6 1.2 dB Isolation ISO 4, 5, 6 35 dB Input Power for 1dB Compression 2/ IP1dB 7, 8A, 8B 21 dBm Input Third Order Intercept 3/4/ IIP3 4 43 dBm Frequency = 4.0 GHz Continuous Wave (CW) Input Insertion Loss IL RFC PIN = -25 dBm 4, 5, 6 2 dB Isolation ISO 4, 5, 6 22 dB Input Power for 1dB Compression 2/ IP1dB 7, 8A, 8B 21 dBm Input Third Order Intercept 3/4/ IIP3 4 40 dBm Power Supplies VDD Supply Current IDD No Signal at RFC, RF1 – RF4 1, 2, 3 7 mA TABLE I Notes: 1/ TA Nom = +25 °C, TA Max = +85 °C, TA Min = -40 °C, VDD = +5.0 V, A & B Control Input Voltage Low = 0 V, High = +5.0 V. 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. 3/ Guaranteed by design and shall not be tested. It shall be repeated after major design or process changes. 4/ Two-Tone Input Power = +7 dBm per Tone with1 MHz spacing. TABLE IIA – ELECTRICAL TEST REQUIREMENTS Test Requirements Subgroups (in accordance with MIL- PRF-38535, Table III) Interim Electrical Parameters 1, 4 Final Electrical Parameters 1, 4 1/ 2/ Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C end-point electrical parameters 1, 4 2/ Group D end-point electrical parameters 1, 4 TABLE IIA Notes: 1/ PDA applies to Table I subgroup 1 and Table IIB delta parameters. 2/ See Table IIB for delta parameters
ASD0016609 Rev. A | Page 5 of 7 TABLE IIB – BURN-IN/LIFE TEST DELTA LIMITS 1/2/ Parameter Test Conditions Symbol Delta Units Insertion Loss 3/ IL ± 1 dB VDD Supply Current 4/ IDD ± 10 % TABL E IIB Notes: 1/ 240 hour burn in and 1000 hour life test (Group C) end point electrical parameters. 2/ Deltas are performed at TA = +25 °C only with VDD = + 5.0 V 3/ A & B Control Input Voltage Low = 0 V, High = +5.0 V. 4/ No Signal at RFC, RF1 – RF4. TABLE III – TRUTH TABLE Control Input Signal Path State A B RFC to: Low Low RF1 High Low RF2 Low High RF3 High High RF4 TABLE IV – TTL/CMOS CONTROL VOLTAGES State Bias Condition Low 0 Vdc to +0.8 Vdc @ 5 µA Typ. High +2.0 Vdc to +5.0 Vdc @ 70 µA Typ.
5.0 Burn-In Life Test, and Radiation
5.1. Burn-In Test Circuit, Life Test Circuit 5.1.1. The test conditions and circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 test condition D of MIL –STD-883. 5.1.2. HTRB is not applicable for this drawing.
ASD0016609 Rev. A | Page 6 of 7
6.0 MIL-PRF-38535 QMLV Exceptions
The manufacturing flow described in the RF & MICROWA VE STANDARD SPACE LEVEL PRODUCT S PROGRAM is to be considered a part of this specification. The brochure describes standard QMLV exceptions for Aerospace products run at the ADI Chelmsford, MA facility. 6.1. Wafer Fabrication Foundry information is available upon request. 6.2. Group D Group D-5 Salt Atmosphere testing is not being performed.
7.0 Application Notes
The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports (RFC, RF1 – RF4) should have 50 Ohm impedance. Also, the package ground leads, and package bottom should be connected directly to the ground plane. The recommended circuit board material is Rogers 4350.
8.0 Package Outline Dimensions
The G16 package and outline dimensions can be found at http://www.analog.com or upon request.
ASD0016609 Rev. A | Page 7 of 7 ORDERING GUIDE R evision History Rev Description of Change Date A Initial Release 03/24/2021 Model Temperature Range Package Description Package Option ADH244-701G16 -40 °C to +85 °C 16 Lead Glass/Metal Hermetic SMT G16 (FR-16-2) © 2 021 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. Printed in the U.S.A. 03/21