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<0.4 Ω CMOS 1.8 V to 5.5 V SPST Switches Data Sheet ADG801/ADG802 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2002–2012 Analog Devices, Inc. All rights reserved.

FEATURES

0.4 Ω maximum on resistance at 125°C 0.08 Ω maximum on resistance flatness at 125°C 1.8 V to 5.5 V single supply Automotive temperature range from −40°C to +125°C 400 mA current-carrying capability Tiny 6-lead SOT-23 and 8-lead MSOP packages 35 ns switching times Low power consumption TTL-/CMOS-compatible inputs Pin compatible with ADG701/ADG702

APPLICATIONS

S ADG801 D IN S ADG802 D SWITCHES SHOWN FOR A LOGIC 1 INPUT 02800-001 Figure 1. GENERAL DESCRIPTION The ADG801 and ADG802 are monolithic CMOS, single-pole, single throw (SPST) switches with on resistance of less than 0.4 Ω. These switches are designed using an advanced submicron process that provides extremely low on resistance, high switching speed, and low leakage currents. The low on resistance of <0.4 Ω makes these parts ideal for applications where low on resistance switching is critical. The ADG801 switch is normally open (NO), while the ADG802 is normally closed (NC). Each switch conducts equally well in both directions when on. PRODUCT HIGHLIGHTS 1. Low on resistance (0.25 Ω typical). 2. 1.8 V to 5.5 V single-supply operation. 3. Tiny 6-lead SOT-23 and 8-lead MSOP packages. 4. 400 mA current-carrying capability. 5. Automotive temperature range from −40°C to +125°C. 6. Pin compatible with ADG701 (ADG801) and ADG702 (ADG802).

Rev. B | Page 2 of 16 TABLE OF CONTENTS

REVISION HISTORY

1/12—Rev. A to Rev. B 3/07—Rev. 0 to Rev. A 5/02—Revision 0: Initial Version

Rev. B | Page 3 of 16 SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V , unless otherwise noted. The automotive temperature range is −40°C to +125°C. Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C1 Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.25 Ω typ VS = 0 V to VDD, IS = 100 mA; see Figure 13 0.3 0.35 0.4 Ω max VS = 0 V to VDD, IS = 100 mA; see Figure 13 On Resistance Flatness (RFLAT(ON)) 0.05 Ω typ VS = 0 V to VDD, IS = 100 mA 0.07 0.08 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 14 ±0.25 ±3 ±30 nA max VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 14 Drain Off Leakage, ID (Off ) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 14 ±0.25 ±3 ±30 nA max VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 14 Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 4.5 V; see Figure 15 ±0.25 ±3 ±30 nA max VS = VD = 1 V, or 4.5 V; see Figure 15 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max CIN, Digital Input Capacitance 5 pF typ DYNAMIC CHARACTERISTICS2 tON 35 ns typ RL = 50 Ω, CL = 35 pF 45 50 55 ns max VS = 3 V; see Figure 16 tOFF 9 ns typ RL = 50 Ω, CL = 35 pF 15 18 21 ns max VS = 3 V; see Figure 16 Charge Injection 50 pC typ VS = 2.5 V, RS = 0 Ω; CL = 1 nF; see Figure 17 Off Isolation −61 dB typ RL = 50 Ω, CL = 5 pF; f = 100 kHz; see Figure 18 Bandwidth −3 dB 12 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 19 CS (Off ) 180 pF typ f = 1 MHz CD (Off ) 180 pF typ f = 1 MHz CD, CS (On) 420 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V 1.0 2.0 μA max 1 On resistance parameters tested with IS = 10 mA. 2 Guaranteed by design, not subject to production test.

Rev. B | Page 4 of 16 VDD = 2.7 V to 3.6 V , GND = 0 V , unless otherwise noted. The automotive temperature range is −40°C to +125°C. Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C1 Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.4 Ω typ VS = 0 V to VDD, IS = 100 mA; see Figure 13 0.6 0.65 0.7 Ω max VS = 0 V to VDD, IS = 100 mA; see Figure 13 On Resistance Flatness (RFLAT(ON)) 0.1 0.1 0.1 Ω typ VS = 0 V to VDD, IS = 100 mA LEAKAGE CURRENTS VDD = 3.6 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V; see Figure 14 ±0.25 ±3 ±30 nA max VS = 3.3 V/1 V, VD = 1 V/3.3 V; see Figure 14 Drain Off Leakage, ID (Off ) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V; see Figure 14 ±0.25 ±3 ±30 nA max VS = 3.3 V/1 V, VD = 1 V/3.3 V; see Figure 14 Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 3.3 V; see Figure 15 ±0.25 ±3 ±30 nA max VS = VD = 1 V, or 3.3 V; see Figure 15 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max CIN, Digital Input Capacitance 5 pF typ DYNAMIC CHARACTERISTICS2 tON 40 ns typ RL = 50 Ω, CL = 35 pF 55 60 65 ns max VS = 1.5 V; see Figure 16 tOFF 9 ns typ RL = 50 Ω, CL = 35 pF 15 18 21 ns max VS = 1.5 V; see Figure 16 Charge Injection 10 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 17 Off Isolation −61 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 18 Bandwidth −3 dB 12 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 19 CS (Off ) 180 pF typ f = 1 MHz CD (Off ) 180 pF typ f = 1 MHz CD, CS (On) 420 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 3.6 V IDD 0.001 μA typ Digital inputs = 0 V or 3.6 V 1.0 2.0 μA max 1 On resistance parameters tested with IS = 10 mA. 2 Guaranteed by design, not subject to production test.

TA = 25°C, unless otherwise noted. 1 Overvoltages at Pin IN, Pin S, or Pin D are clamped by internal diodes. Current should be limited to the maximum ratings provided. Table 4. Truth Table

Rev. B | Page 9 of 16 TERMINOLOGY VDD The most positive power supply potential. IDD Positive supply current. GND Ground (0 V) reference. S The source terminal can be an input or an output. D The drain terminal can be an input or an output. IN Logic control input. V D (VS) Analog voltage on Terminal D and Terminal S. R ON Ohmic resistance between Terminal D and Terminal S. R FLAT(ON) The difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. IS (Off) Source leakage current with the switch off. I D (Off) Drain leakage current with the switch off. I D, IS (On) Channel leakage current with the switch on. V INL Maximum input voltage for Logic 0. V INH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. C S (Off) The off switch source capacitance is measured with reference to ground. CD (Off) The off switch drain capacitance is measured with reference to ground. CD, CS (On) The on switch capacitance is measured with reference to ground. CIN Digital input capacitance. t ON The delay between applying the digital control input and when the output switches on. See Figure 16. tOFF The delay between applying the digital control input and when the output switches off. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. Off Isolation A measure of unwanted signal coupling through an off switch. Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch.

0.95 BSC

0.15 MAX

0.05 MIN

1.45 MAX

0.95 MIN

0.20 MAX

0.08 MIN

0.50 MAX

0.30 MIN

Figure 20. 6-Lead Small Outline Transistor Package [SOT-23]

0.65 BSC

1.10 MAX

Figure 21. 8-Lead Mini Small Outline Package [MSOP]

Rev. B | Page 13 of 16 ORDERING GUIDE Model1 Temperature Range Package Description Package Option Branding2 ADG801BRM −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SLB ADG801BRM-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SLB ADG801BRM-REEL7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SLB ADG801BRMZ −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S06 ADG801BRMZ-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S06 ADG801BRMZ-REEL7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S06 ADG801BRT-500RL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SLB ADG801BRT-REEL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SLB ADG801BRTZ-500RL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S06 ADG801BRTZ-REEL −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S06 ADG801BRTZ-REEL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S06 ADG802BRM −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SMB ADG802BRM-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SMB ADG802BRM-REEL7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SMB ADG802BRMZ −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S0F ADG802BRMZ-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S0F ADG802BRMZ-REEL7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S0F ADG802BRT-500RL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SMB ADG802BRTZ-500RL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S0F ADG802BRTZ-REEL −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S0F ADG802BRTZ-REEL7 −40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 S0F 1 Z = RoHS Compliant Part. 2 Branding on SOT-23 and MSOP packages is limited to three characters due to space constraints.

Rev. B | Page 14 of 16 NOTES

Rev. B | Page 15 of 16 NOTES

Rev. B | Page 16 of 16 NOTES ©2002–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D02800-0-1/12(B)