ADF4108BRUZ-RL

ADF4108 AD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 20

Technical content

Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.

FEATURES

8.0 GHz bandwidth

3.2 V to 3.6 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3.3 V systems Programmable, dual modulus prescaler 8/9, 16/17, 32/33, or Programmable charge pump currents Programmable antibacklash pulse width 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode Loop filter design possible with ADIsimPLL

APPLICATIONS

Base stations for wireless radio GENERAL DESCRIPTION The ADF4108 frequency synthesizer can be used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low noise digital PFD (phase frequency detector), a precision charge pump, a programmable reference divider, programmable A and B counters, and a dual-modulus prescaler (P/P + 1). The A (6-bit) and B (13-bit) counters, in conjunction with the dual- modulus prescaler (P/P + 1), implement an N divider (N = BP + A). In addition, the 14-bit reference counter (R counter), allows selectable REFIN frequencies at the PFD input. A complete phase-locked loop (PLL) can be implemented if the synthesizer is used with an external loop filter and voltage controlled oscillator (VCO). Its very high bandwidth means that frequency doublers can be eliminated in many high frequency systems, simplifying system architecture and reducing cost. FUNCTIONAL BLOCK DIAGRAM CLK DATA LE REFIN RFINA RFINB 24-BIT INPUT REGISTER SDOUT AVDD DVDD CE AGND DGND 14-BIT R COUNTER R COUNTER LATCH FUNCTION LATCH A, B COUNTER LATCHFROM FUNCTION LATCH PRESCALER P/P + 1 N = BP + A LOAD LOAD 13-BIT B COUNTER 6-BIT A COUNTER M3 M2 M1 MUX SDOUT AVDD HIGH Z MUXOUT CPGND RSETVP CP PHASE FREQUENCY DETECTOR LOCK DETECT REFERENCE CHARGE PUMP CURRENT SETTING 1 ADF4108 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 CURRENT SETTING 2 06015-001 Figure 1.

Rev. 0 | Page 2 of 20 TABLE OF CONTENTS

REVISION HISTORY

4/06—Revision 0: Initial Version

Rev. 0 | Page 3 of 20 SPECIFICATIONS AVDD = DVDD = 3.3 V ± 2%, AVDD ≤ VP ≤ 5.5 V , AGND = DGND = CPGND = 0 V , RSET = 5.1 kΩ, dBm referred to 50 Ω, TA = TMIN to TMAX, unless otherwise noted. Table 1. Parameter B Version1 B Chips2 (Typ) Unit Test Conditions/Comments RF CHARACTERISTICS See Figure 12 for input circuit RF Input Frequency (RFIN) 1.0/8.0 1.0/8.0 GHz min/max For lower frequencies ensure slew rate (SR) > 320 V/μs RF Input Sensitivity −5/+5 −5/+5 dBm min/max Maximum Allowable Prescaler Output Frequency3 300 325 300 325 MHz max MHz max P = 8 P = 16 REFIN CHARACTERISTICS REFIN Input Frequency 20/250 20/250 MHz min/max For f < 20 MHz, ensure SR > 50 V/μs REFIN Input Sensitivity4 0.8/VDD 0.8/VDD V p-p min/max Biased at AVDD/25 REFIN Input Capacitance 10 10 pF max REFIN Input Current ±100 ±100 μA max PHASE DETECTOR Phase Detector Frequency6 104 104 MHz max CHARGE PUMP Programmable; see Figure 19 ICP Sink/Source High Value 5 5 mA typ With RSET = 5.1 kΩ Low Value 625 625 μA typ Absolute Accuracy 2.5 2.5 % typ With RSET = 5.1 kΩ RSET Range 3.0/11 3.0/11 kΩ typ See Figure 19 ICP Three-State Leakage 1 1 nA typ 1 nA typical; TA = 25°C Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP – 0.5 V ICP vs. Temperature 2 2 % typ VCP = VP/2 LOGIC INPUTS VIH, Input High Voltage 1.4 1.4 V min VIL, Input Low Voltage 0.6 0.6 V max IINH, IINL, Input Current ±1 ±1 μA max CIN, Input Capacitance 10 10 pF max LOGIC OUTPUTS VOH, Output High Voltage 1.4 1.4 V min Open-drain output chosen; 1 kΩ pull-up resistor to 1.8 V VOH, Output High Voltage VDD − 0.4 VDD − 0.4 V min CMOS output chosen IOH 100 100 μA max VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 μA POWER SUPPLIES AVDD 3.2/3.6 3.2/3.6 V min/V max DVDD AVDD AVDD VP AVDD/5.5 AVDD/5.5 V min/V max AVDD ≤ VP ≤ 5.5 V IDD (AIDD + DIDD)7 17 17 mA max 15 mA typ IP 0.4 0.4 mA max TA = 25°C Power-Down Mode (AIDD + DIDD)8 10 10 μA typ

Rev. 0 | Page 4 of 20 Parameter B Version1 B Chips2 (Typ) Unit Test Conditions/Comments NOISE CHARACTERISTICS Normalized Phase Noise Floor9 −219 −219 dBc/Hz typ Phase Noise Performance10 @ VCO output

7900 MHz Output11 −81 −81 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency

7900 MHz Output11 –61 –61 dBc typ @ 1 MHz offset and 1 MHz PFD frequency

1 Operating temperature range (B version) is –40°C to +85°C. 2 The B chip specifications are given as typical values. 3 This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that is less than this value. 4 AVDD = DVDD = 3.3 V. 5 AC coupling ensures AVDD/2 bias. 6 Guaranteed by design. Sample tested to ensure compliance. 7 TA = 25°C; AVDD = DVDD = 3.3 V; P = 32; RFIN = 8 GHz, fPFD = 200 kHz, REFIN = 10 MHz. 8 TA = 25°C; AVDD = DVDD = 3.3 V; R = 16,383; A = 63; B = 891; P = 32; RFIN = 7.0 GHz. 9 This value can be used to calculate phase noise for any application. Use the formula –219 + 10 log(fPFD) + 20 logN to calculate in-band phase noise performance as seen at the VCO output. The value given is the lowest noise mode. 10 The phase noise is measured with the EVAL-ADF4108EB1 evaluation board, with the Hittite HMC506LP4 VCO. The spectrum analyzer provides the REFIN for the synthesizer (fREFOUT = 10 MHz @ 0 dBm). 11 fREFIN = 10 MHz; fPFD = 1 MHz; fRF = 7900 MHz; N = 7900; loop B/W = 50 kHz, VCO = HMC506LP4, spurs are dominated by the leakage current on the tuning port of the HMC506LP4 VCO.

TMAX, unless otherwise noted. 1 Guaranteed by design but not production tested. 2 Operating temperature range (B Version) is –40°C to +85°C. Figure 2. Timing Diagram

Rev. 0 | Page 6 of 20 ABSOLUTE MAXIMUM RATING TA = 25°C, unless otherwise noted. Table 3. Parameter Rating AVDD to GND1 –0.3 V to +3.9 V AVDD to DVDD –0.3 V to +0.3 V VP to GND –0.3 V to +5.8 V VP to AVDD –0.3 V to +5.8 V Digital I/O Voltage to GND –0.3 V to VDD + 0.3 V Analog I/O Voltage to GND –0.3 V to VP + 0.3 V REFIN, RFINA, RFINB to GND –0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B Version) –40°C to +85°C Storage Temperature Range –65°C to +125°C Maximum Junction Temperature 150°C TSSOP θJA Thermal Impedance 112°C/W CSP θJA Thermal Impedance (Paddle Soldered) 30.4°C/W Reflow Soldering Peak Temperature (60 sec) 260 Time at Peak Temperature 40 sec Transistor Count CMOS 6425 Bipolar 303 1 GND = AGND = DGND = 0 V. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with an ESD rating of <2 kV , and it is ESD sensitive. Proper precautions should be taken for handling and assembly. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrosta tic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent dama ge may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD pr ecautions are recommended to avoid performance degradation or loss of functionality.

15 MUXOUT

13 DATA

12 CLK

Figure 3. TSSOP Pin Configuration for TSSOP Figure 4. LFCSP_VQ Pin Configuration Table 4. Pin Function Descriptions 1 19 RSET Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. with RSET = 5.1 kΩ, ICP MAX = 5 mA. 3 1 CPGND Charge Pump Ground. This is the ground return path for the charge pump. 4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler. small bypass capacitor, typically 100 pF. See Figure 12. 6 5 RFINA Input to the RF Prescaler. This small signal input is ac-coupled to the external VCO. 9 9, 10 DGND Digital Ground. is a high impedance CMOS input. one of the four latches, the latch being selected using the control bits. frequency to be accessed externally. plane should be placed as close as possible to this pin. DVDD must be the same value as AVDD. VDD is 3.3 V, it can be set to 5 V and used to drive a VCO with a tuning range of up to 5 V.

Figure 16. Latch Summary

15ns MUST OCCUR BEFORE LOCK DETECT IS SET. 15ns MUST OCCUR BEFORE LOCK DETECT IS SET. Figure 17. Reference Counter Latch Map

SETTING 1 IS PERMANENTLY USED. SETTING 2 IS PERMANENTLY USED. Figure 18. AB Counter Latch Map

0 X X

Figure 19. Function Latch Map

Figure 20. Initialization Latch Map

Rev. 0 | Page 16 of 20 FUNCTION LATCH The on-chip function latch is programmed with C2 and C1 set to 1 and 0, respectively. Figure 19 shows the input data format for programming the function latch. Counter Reset DB2 (F1) is the counter reset bit. When this bit is 1, the R counter and the AB counters are reset. For normal operation, this bit should be 0. Upon powering up, the F1 bit needs to be disabled (set to 0). Then, the N counter resumes counting in close alignment with the R counter. (The maximum error is one prescaler cycle.) Power-Down DB3 (PD1) and DB21 (PD2) provide programmable power- down modes. They are enabled by the CE pin. When the CE pin is low, the device is immediately disabled regardless of the states of PD2 and PD1. In the programmed asynchronous power-down, the device powers down immediately after latching a 1 into the PD1 bit, with the condition that PD2 has been loaded with a 0. In the programmed synchronous power-down, the device power-down is gated by the charge pump to prevent unwanted frequency jumps. Once the power-down is enabled by writing a 1 into PD1 (on condition that a 1 has also been loaded to PD2), then the device will go into power-down on the occurrence of the next charge pump event. When a power-down is activated (either synchronous or asynchronous mode, including CE pin activated power-down), the following events occur:

• All active dc current paths are removed.
• The R, N, and timeout counters are forced to their load state conditions.
• The charge pump is forced into three-state mode.
• The digital lock detect circuitry is reset.
• The RF IN input is debiased.
• The reference input buffer circuitry is disabled.
• The input register remains active and capable of loading and latching data. MUXOUT Control The on-chip multiplexer is controlled by M3, M2, and M1 on the ADF4108. Figure 19 shows the truth table. Fastlock Enable Bit DB9 of the function latch is the fastlock enable bit. Fastlock is enabled only when this bit is 1. Fastlock Mode Bit DB10 of the function latch is the fastlock mode bit. When fastlock is enabled, this bit determines which fastlock mode is used. If the fastlock mode bit is 0, then Fastlock Mode 1 is selected; and if the fastlock mode bit is 1, then Fastlock Mode 2 is selected. Fastlock Mode 1 The charge pump current is switched to the contents of Current Setting 2. The device enters fastlock by having a 1 written to the CP gain bit in the AB counter latch. The device exits fastlock by having a 0 written to the CP gain bit in the AB counter latch. Fastlock Mode 2 The charge pump current is switched to the contents of Current Setting 2. The device enters fastlock by having a 1 written to the CP gain bit in the AB counter latch. The device exits fastlock under the control of the timer counter. After the timeout period determined by the value in TC4:TC1, the CP gain bit in the AB counter latch is automatically reset to 0 and the device reverts to normal mode instead of fastlock. See Figure 19 for the timeout periods. Timer Counter Control The user has the option of programming two charge pump currents. The intent is that Current Setting 1 is used when the RF output is stable and the system is in a static state. Current Setting 2 is meant to be used when the system is dynamic and in a state of change (that is, when a new output frequency is programmed). The normal sequence of events is as follows: The user initially decides what the preferred charge pump currents are going to be. For example, the choice may be 2.5 mA as Current Setting 1 and 5 mA as Current Setting 2. At the same time it must be decided how long the secondary current is to stay active before reverting to the primary current. This is controlled by the timer counter control bits, DB14:DB11 (TC4:TC1) in the function latch. The truth table is given in Figure 19. Now, to program a new output frequency, the user simply programs the AB counter latch with new values for A and B. At the same time, the CP gain bit can be set to 1, which sets the charge pump with the value in CPI6:CPI4 for a period of time determined by TC4–TC1. When this time is up, the charge pump current reverts to the value set by CPI3:CPI1. At the same time, the CP gain bit in the AB counter latch is reset to 0 and is now ready for the next time the user wishes to change the frequency. Note that there is an enable feature on the timer counter. It is enabled when Fastlock Mode 2 is chosen by setting the fastlock mode bit (DB10) in the function latch to 1.

Rev. 0 | Page 17 of 20 Charge Pump Currents CPI3, CPI2, and CPI1 program Current Setting 1 for the charge pump. CPI6, CPI5, and CPI4 program Current Setting 2 for the charge pump. The truth table is given in Figure 19. Prescaler Value P2 and P1 in the function latch set the prescaler values. The prescaler value should be chosen so that the prescaler output frequency is always less than or equal to 300 MHz. Thus, with an RF frequency of 4 GHz, a prescaler value of 16/17 is valid but a value of 8/9 is not valid. PD Polarity This bit sets the phase detector polarity bit. See Figure 19. CP Three-State This bit controls the CP output pin. With the bit set high, the CP output is put into three-state. With the bit set low, the CP output is enabled. INITIALIZATION LATCH The initialization latch is programmed when C2 and C1 are set to 1 and 1. This is essentially the same as the function latch (programmed when C2, C1 = 1, 0). However, when the initialization latch is programmed, an additional internal reset pulse is applied to the R and AB counters. This pulse ensures that the AB counter is at load point when the AB counter data is latched and the device will begin counting in close phase alignment. If the latch is programmed for synchronous power-down (CE pin is high; PD1 bit is high; PD2 bit is low), the internal pulse also triggers this power-down. The prescaler reference and the oscillator input buffer are unaffected by the internal reset pulse and so close phase alignment is maintained when counting resumes. When the first AB counter data is latched after initialization, the internal reset pulse is again activated. However, successive AB counter loads after this will not trigger the internal reset pulse. Device Programming after Initial Power-Up After initially powering up the device, there are three ways to program the device. Initialization Latch Method 1. Apply VDD. 2. Program the initialization latch (11 in 2 LSBs of input word). Make sure that the F1 bit is programmed to 0. 3. Next, do a function latch load (10 in 2 LSBs of the control word), making sure that the F1 bit is programmed to a 0. 4. Then do an R load (00 in 2 LSBs). 5. Then do an AB load (01 in 2 LSBs). When the initialization latch is loaded, the following occurs:

• The function latch contents are loaded.
• An internal pulse resets the R, AB, and timeout counters to load-state conditions and also three-states the charge pump. Note that the prescaler band gap reference and the oscillator input buffer are unaffected by the internal reset pulse, allowing close phase alignment when counting resumes.
• Latching the first AB counter data after the initialization word will activate the same internal reset pulse. Successive AB loads will not trigger the internal reset pulse unless there is another initialization. CE Pin Method 1. Apply VDD. 2. Bring CE low to put the device into power-down. This is an asynchronous power-down in that it happens immediately. 3. Program the function latch (10). 4. Program the R counter latch (00). 5. Program the AB counter latch (01). 6. Bring CE high to take the device out of power-down. The R and AB counters will now resume counting in close alignment. Note that after CE goes high, a duration of 1 μs may be required for the prescaler band gap voltage and oscillator input buffer bias to reach steady state. CE can be used to power the device up and down to check for channel activity. The input register does not need to be reprogrammed each time the device is disabled and enabled as long as it has been programmed at least once after V DD was initially applied. Counter Reset Method 1. Apply VDD. 2. Do a function latch load (10 in 2 LSBs). As part of this, load 1 to the F1 bit. This enables the counter reset. 3. Do an R counter load (00 in 2 LSBs). 4. Do an AB counter load (01 in 2 LSBs). 5. Do a function latch load (10 in 2 LSBs). As part of this, load 0 to the F1 bit. This disables the counter reset. This sequence provides the same close alignment as the initialization method. It offers direct control over the internal reset. Note that counter reset holds the counters at load point and three-states the charge pump, but does not trigger synchronous power-down. POWER SUPPLY CONSIDERATIONS The ADF4108 operates over a power supply range of 3.2 V to 3.6 V . The ADP3300ART-3.3 is a low dropout linear regulator from Analog Devices. It outputs 3.3 V with an accuracy of 1.4% and is recommended for use with the ADF4108.

Rev. 0 | Page 19 of 20 PCB DESIGN GUIDELINES FOR CHIP SCALE PACKAGE The lands on the chip scale package (CP-20) are rectangular. The printed circuit board pad for these should be 0.1 mm longer than the package land length and 0.05 mm wider than the package land width. The land should be centered on the pad. This will ensure that the solder joint size is maximized. The bottom of the chip scale package has a central thermal pad. The thermal pad on the printed circuit board should be at least as large as this exposed pad. On the printed circuit board, there should be a clearance of at least 0.25 mm between the thermal pad and the inner edges of the pad pattern. This will ensure that shorting is avoided. Thermal vias can be used on the printed circuit board thermal pad to improve thermal performance of the package. If vias are used, they should be incorporated in the thermal pad at 1.2 mm pitch grid. The via diameter should be between 0.3 mm and 0.33 mm and the via barrel should be plated with 1 oz. copper to plug the via. The user should connect the printed circuit board thermal pad to AGND.

Figure 23. 16-Lead Thin Shrink Small Outline Package [TSSOP]

0.80 MAX

0.65 TYP

0.05 MAX

0.02 NOM

0.25 MIN

Figure 24. 20-Lead Lead Frame Chip Scale Package [LFCSP_VQ] registered trademarks are the property of their respective owners.