AD8602DR

AD8601_03 AD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 20

Technical content

REV. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved. AD8601/AD8602/AD8604 Precision CMOS Single-Supply Rail-to-Rail Input/Output Wideband Operational Amplifiers

FEATURES

Low Offset Voltage: 500 /H9262V Max Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 750 /H9262A/Amplifier Wide Bandwidth: 8 MHz Slew Rate: 5 V/ /H9262s Low Distortion No Phase Reversal Low Input Currents Unity Gain Stable

APPLICATIONS

Battery-Powered Instrumentation Multipole Filters Sensors ASIC Input or Output Amplifiers Audio FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The AD8601, AD8602, and AD8604 are single, dual, and quad rail-to-rail input and output single-supply amplifiers featuring very low offset voltage and wide signal bandwidth. These amplifiers use a new, patented trimming technique that achieves superior performance without laser trimming. All are fully specified to operate on a 3 V to 5 V single supply. The combination of low offsets, very low input bias currents, and high speed make these amplifiers useful in a wide variety of applications. Filters, integrators, diode amplifiers, shunt current sensors, and high impedance sensors all benefit from the combi- nation of performance features. Audio and other ac applications benefit from the wide bandwidth and low distortion. For the most cost-sensitive applications, the D grades offer this ac per- formance with lower dc precision at a lower price point. Applications for these amplifiers include audio amplification for portable devices, portable phone headsets, bar code scanners, portable instruments, cellular PA controls, and multipole filters. The ability to swing rail-to-rail at both the input and output enables designers to buffer CMOS ADCs, DACs, ASICs, and other wide output swing devices in single-supply systems. The AD8601, AD8602, and AD8604 are specified over the extended industrial (–40°C to +125°C) temperature range. The AD8601, single, is available in the tiny 5-lead SOT-23 package. The AD8602, dual, is available in 8-lead MSOP and narrow SOIC surface-mount packages. The AD8604, quad, is available in 14-lead TSSOP and narrow SOIC packages. SOT, MSOP, and TSSOP versions are available in tape and reel only. 14-Lead TSSOP (RU Suffix) /H11546IN A /H11545IN A V/H11545 /H11545IN B /H11546IN B OUT B OUT D /H11546IN D /H11545IN D V/H11546 /H11545IN C /H11546IN C OUT C OUT A AD8604 14-Lead SOIC (R Suffix) /H11546IN A /H11545IN A V/H11545 /H11545IN B /H11546IN B OUT B OUT D /H11546IN D /H11545IN D V/H11546 /H11545IN C /H11546IN C OUT C OUT A AD8604 5-Lead SOT-23 (RT Suffix) 4 /H11546IN V/H11545 /H11545IN OUT A V/H11546AD8601 8-Lead MSOP (RM Suffix) OUT A 8 /H11546IN A /H11545IN A V/H11545 OUT B /H11546IN B V/H11546/H11545 IN B AD8602 8-Lead SOIC (R Suffix) AD8602 /H11546IN A V/H11546 /H11545IN A OUT B /H11546IN B V/H11545 /H11545IN B OUT A

REV. D–2– AD8601/AD8602/AD8604–SPECIFICATIONS (VS = 3 V, VCM = VS/2, TA = 25/H11543C, unless otherwise noted.) A Grade D Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage (AD8601/AD8602) V OS 0 V ≤ VCM ≤ 1.3 V 80 500 1,100 6,000 µV –40°C ≤ TA ≤ +85°C 700 7,000 µV –40°C ≤ TA ≤ +125°C 1,100 7,000 µV

0 V ≤ VCM ≤ 3 V* 350 750 1,300 6,000 µV

–40°C ≤ TA ≤ +85°C 1,800 7,000 µV –40°C ≤ TA ≤ +125°C 2,100 7,000 µV Offset Voltage (AD8604) V OS VCM = 0 V to 1.3 V 80 600 1,100 6,000 µV –40°C ≤ TA ≤ +85°C 800 7,000 µV –40°C ≤ TA ≤ +125°C 1,600 7,000 µV VCM = 0 V to 3.0 V * 350 800 1,300 6,000 µV –40°C ≤ TA ≤ +85°C 2,200 7,000 µV –40°C ≤ TA ≤ +125°C 2,400 7,000 µV Input Bias Current I B 0.2 60 0.2 200 pA –40°C ≤ TA ≤ +85°C2 5 100 25 200 pA –40°C ≤ TA ≤ +125°C 150 1,000 150 1,000 pA Input Offset Current I OS 0.1 30 0.1 100 pA –40°C ≤ TA ≤ +85°C5 0 100 pA –40°C ≤ TA ≤ +125°C 500 500 pA Input Voltage Range 0 3 0 3 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 3 V 68 83 52 65 dB Large Signal Voltage Gain A VO VO = 0.5 V to 2.5 V, RL = 2 kΩ , VCM = 0 V 30 100 20 60 V/mV Offset Voltage Drift ∆VOS/∆T2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Low V OL IL = 1.0 mA 20 35 20 35 mV –40°C ≤ TA ≤ +125°C5 0 5 0 m V Output Current I OUT ± 30 ± 30 mA Closed-Loop Output Impedance Z OUT f = 1 MHz, AV = 1 12 12 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR V S = 2.7 V to 5.5 V 67 80 56 72 dB Supply Current/Amplifier I SY VO = 0 V 680 1,000 680 1,000 µA –40°C ≤ TA ≤ +125°C 1,300 1,300 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 5.2 5.2 V/ µs Settling Time t S To 0.01% <0.5 <0.5 µs Gain Bandwidth Product GBP 8.2 8.2 MHz Phase Margin /H9021o5 05 0 Degrees NOISE PERFORMANCE Voltage Noise Density e n f = 1 kHz 33 33 nV/ √Hz en f = 10 kHz 18 18 nV/ √Hz Current Noise Density i n 0.05 0.05 pA/ √Hz *For VCM between 1.3 V and 1.8 V, V OS may exceed specified value. Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

REV. D AD8601/AD8602/AD8604 –3– Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage (AD8601/AD8602) V OS 0 V ≤ VCM ≤ 5 V 80 500 1,300 6,000 µV –40°C ≤ TA ≤ +125°C 1,300 7,000 µV Offset Voltage (AD8604) V OS VCM = 0 V to 5 V 80 600 1,300 6,000 µV –40°C ≤ TA ≤ +125°C 1,700 7,000 µV Input Bias Current I B 0.2 60 0.2 200 pA –40°C ≤ TA ≤ +85°C 100 200 pA –40°C ≤ TA ≤ +125°C 1,000 1,000 pA Input Offset Current I OS 0.1 30 0.1 100 pA –40°C ≤ TA ≤ +85°C6 5 06 100 pA –40°C ≤ TA ≤ +125°C2 5 500 25 500 pA Input Voltage Range 0 5 0 5 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 5 V 74 89 56 67 dB Large Signal Voltage Gain A VO VO = 0.5 V to 4.5 V, 30 80 20 60 V/mV RL = 2 kΩ, VCM = 0 V Offset Voltage Drift ∆VOS/∆T2 2 µV/°C OUTPUT CHARACTERISTICS IL = 10 mA 4.7 4.77 4.7 4.77 V Output Voltage Low V OL IL = 1.0 mA 15 30 15 30 mV IL = 10 mA 125 175 125 175 mV –40°C ≤ TA ≤ +125°C 250 250 mV Output Current I OUT ± 50 ± 50 mA Closed-Loop Output Impedance Z OUT f = 1 MHz, AV = 1 10 10 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR V S = 2.7 V to 5.5 V 67 80 56 72 dB Supply Current/Amplifier I SY VO = 0 V 750 1,200 750 1,200 µA –40°C ≤ TA ≤ +125°C 1,500 1,500 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 66 V / µs Settling Time t S To 0.01% <1.0 <1.0 µs Full Power Bandwidth BWp < 1% Distortion 360 360 kHz Gain Bandwidth Product GBP 8.4 8.4 MHz Phase Margin /H9021o5 55 5 Degrees NOISE PERFORMANCE Voltage Noise Density e n f = 1 kHz 33 33 nV/ √Hz en f = 10 kHz 18 18 nV/ √Hz Current Noise Density i n f = 1 kHz 0.05 0.05 pA/ √Hz Specifications subject to change without notice. (VS = 5.0 V, VCM = VS/2, TA = 25/H11543C, unless otherwise noted.)

REV. D–4– AD8601/AD8602/AD8604 ABSOLUTE MAXIMUM RATINGS * Storage Temperature Range Operating Temperature Range Junction Temperature Range *Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING GUIDE Temperature Package Package Model Range Description Option Branding AD8601ART-R2 –40 °C to +125°C 5-Lead SOT-23 RT-5 AAA AD8601ART-REEL –40 °C to +125°C 5-Lead SOT-23 RT-5 AAA AD8601ART-REEL7 –40 °C to +125°C 5-Lead SOT-23 RT-5 AAA AD8601DRT-R2 –40 °C to +125°C 5-Lead SOT-23 RT-5 AAD AD8601DRT-REEL –40 °C to +125°C 5-Lead SOT-23 RT-5 AAD AD8601DRT-REEL7 –40 °C to +125°C 5-Lead SOT-23 RT-5 AAD AD8602AR –40 °C to +125°C 8-Lead SOIC R-8 AD8602AR-REEL7 –40 °C to +125°C 8-Lead SOIC R-8 AD8602AR-R2 –40 °C to +125°C 8-Lead SOIC R-8 AD8602DR –40 °C to +125°C 8-Lead SOIC R-8 AD8602DR-REEL –40 °C to +125°C 8-Lead SOIC R-8 AD8602DR-REEL7 –40 °C to +125°C 8-Lead SOIC R-8 AD8602ARM-R2 –40 °C to +125°C 8-Lead MSOP RM-8 ABA AD8602ARM-REEL –40 °C to +125°C 8-Lead MSOP RM-8 ABA AD8602DRM-REEL –40 °C to +125°C 8-Lead MSOP RM-8 ABD AD8604AR –40 °C to +125°C 14-Lead SOIC R-14 AD8604AR-REEL –40 °C to +125°C 14-Lead SOIC R-14 AD8604AR-REEL7 –40 °C to +125°C 14-Lead SOIC R-14 AD8604DR –40 °C to +125°C 14-Lead SOIC R-14 AD8604DR-REEL –40 °C to +125°C 14-Lead SOIC R-14 AD8604ARU –40 °C to +125°C 14-Lead TSSOP RU-14 AD8604ARU-REEL –40 °C to +125°C 14-Lead TSSOP RU-14 AD8604DRU –40 °C to +125°C 14-Lead TSSOP RU-14 AD8604DRU-REEL –40 °C to +125°C 14-Lead TSSOP RU-14 Package Type /H9258JA* /H9258JC Unit 5-Lead SOT-23 (RT) 230 92 °C/W 8-Lead SOIC (R) 158 43 °C/W 8-Lead MSOP (RM) 210 45 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W */H9258JA is specified for worst-case conditions, i.e., /H9258JA is specified for device in socket for PDIP packages; /H9258JA is specified for device soldered onto a circuit board for surface-mount packages. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8601/AD8602/AD8604 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

REV. D AD8601/AD8602/AD8604 –5– Typical Performance Characteristics– INPUT OFFSET VOLTAGE – mV 3,000 1,500 /H115461.0 1.0/H115460.8 QUANTITY – Amplifiers 2,500 2,000 1,000 500 VS = 3V TA = 25/H11543C VCM = 0V TO 3V TPC 1. Input Offset Voltage Distribution INPUT OFFSET VOLTAGE – mV 3,000 1,500 /H115461.0 1.0/H115460.8 QUANTITY – Amplifiers 2,500 2,000 1,000 500 VS = 5V TA = 25/H11543C VCM = 0V TO 5V TPC 2. Input Offset Voltage Distribution TCVOS – /H9262V//H11543C 01 0 1 QUANTITY – Amplifiers 23 4 5 6 7 8 9 VS = 3V TA = 25/H11543C TO 85/H11543C TPC 3. Input Offset Voltage Drift Distribution TCVOS – /H9262V//H11543C 01 0 1 QUANTITY – Amplifiers 23 4 5 6 7 8 9 VS = 5V TA = 25/H11543C TO 85/H11543C TPC 4. Input Offset Voltage Drift Distribution COMMON-MODE VOLTAGE – V 1.5 /H115462.0 03 . 0 0.5 INPUT OFFSET VOLTAGE – mV 1.0 1.5 2.0 2.5 1.0 0.5 /H115461.0 /H115461.5 /H115460.5 VS = 3V TA = 25/H11543C TPC 5. Input Offset Voltage vs. Common-Mode Voltage COMMON-MODE VOLTAGE – V 1.5 /H115462.0 INPUT OFFSET VOLTAGE – mV 2345 1.0 0.5 /H115461.0 /H115461.5 /H115460.5 VS = 5V TA = 25/H11543C TPC 6. Input Offset Voltage vs. Common-Mode Voltage

REV. D–6– AD8601/AD8602/AD8604 /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 300 250 INPUT BIAS CURRENT – pA 200 150 100 VS = 3V TPC 7. Input Bias Current vs. Temperature /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 300 250 INPUT BIAS CURRENT – pA 200 150 100 VS = 5V TPC 8. Input Bias Current vs. Temperature COMMON-MODE VOLTAGE – V 4.0 INPUT BIAS CURRENT – pA 2.0 2.5 3.0 3.5 VS = 5V TA = 25/H11543C TPC 9. Input Bias Current vs. Common-Mode Voltage /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C INPUT OFFSET CURRENT – pA VS = 3V TPC 10. Input Offset Current vs. Temperature /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C INPUT OFFSET CURRENT – pA VS = 5V TPC 11. Input Offset Current vs. Temperature LOAD CURRENT – mA 10k 0.1 0.001 100 0.01 OUTPUT VOLTAGE – mV 0.1 1 10 100 SOURCE SINK VS = 2.7V TA = 25/H11543C TPC 12. Output Voltage to Supply Rail vs. Load Current

REV. D AD8601/AD8602/AD8604 –7– /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C OUTPUT VOLTAGE – mV VOL @ 1mA LOAD VS = 2.7V TPC 16. Output Voltage Swing vs. Temperature /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 2.67 2.66 2.62 OUTPUT VOLTAGE – V 2.64 VOH @ 1mA LOAD VS = 2.7V 2.63 2.65 TPC 17. Output Voltage Swing vs. Temperature FREQUENCY – Hz 1k 100M 10k GAIN – dB 100k 1M 10M 135 180 PHASE SHIFT – Degrees VS = 3V RL = NO LOAD TA = 25/H11543C 100 –20 –40 –60 TPC 18. Open-Loop Gain and Phase vs. Frequency LOAD CURRENT – mA 10k 0.1 0.001 100 0.01 OUTPUT VOLTAGE – mV 0.1 1 10 100 SOURCE SINK VS = 5V TA = 25/H11543C TPC 13. Output Voltage to Supply Rail vs. Load Current /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 5.1 5.0 4.5 OUTPUT VOLTAGE – V 4.9 4.8 4.7 4.6 VS = 5V VOH @ 1mA LOAD VOH @ 10mA LOAD TPC 14. Output Voltage Swing vs. Temperature /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 250 OUTPUT VOLTAGE – mV 200 150 100 VOL @ 10mA LOAD VS = 5V VOL @ 1mA LOAD TPC 15. Output Voltage Swing vs. Temperature

REV. D–8– AD8601/AD8602/AD8604 FREQUENCY – Hz 1k 100M 10k GAIN – dB 100k 1M 10M 135 180 PHASE SHIFT – Degrees VS = 5V RL = NO LOAD TA = 25/H11543C 100 –20 –40 –60 TPC 19. Open-Loop Gain and Phase vs. Frequency FREQUENCY – Hz 1k 100M 10k CLOSED-LOOP GAIN – dB 100k 1M 10M VS = 3V TA = 25/H11543C AV = 100 AV = 10 AV = 1 TPC 20. Closed-Loop Gain vs. Frequency FREQUENCY – Hz 1k 100M 10k CLOSED-LOOP GAIN – dB 100k 1M 10M VS = 5V TA = 25/H11543C AV = 100 AV = 10 AV = 1 TPC 21. Closed-Loop Gain vs. Frequency FREQUENCY – Hz 3.0 2.5 1k 10M 10k OUTPUT SWING – V p-p 100k 1M 2.0 0.5 1.5 1.0 VS = 2.7V VIN = 2.6V p-p RL = 2k/H9024 TA = 25/H11543C AV = 1 TPC 22. Closed-Loop Output Voltage Swing vs. Frequency FREQUENCY – Hz 1k 10M 10k OUTPUT SWING – V p-p 100k 1M VS = 5V VIN = 4.9V p-p RL = 2k/H9024 TA = 25/H11543C AV = 1 TPC 23. Closed-Loop Output Voltage Swing vs. Frequency FREQUENCY – Hz 100 10M 1k OUTPUT IMPEDANCE – /H9024 10k 100k 1M 160 120 VS = 3V TA = 25/H11543C AV = 100 AV = 10 AV = 1 100 140 180 200 TPC 24. Output Impedance vs. Frequency

REV. D AD8601/AD8602/AD8604 –9– FREQUENCY – Hz 100 10M 1k OUTPUT IMPEDANCE – /H9024 10k 100k 1M 160 120 VS = 5V TA = 25/H11543C AV = 100 AV = 10 AV = 1 100 140 180 200 TPC 25. Output Impedance vs. Frequency FREQUENCY – Hz 1k 20M 10k COMMON-MODE REJECTION – dB 100k 1M 160 140 /H1154640 120 100 /H1154620 10M VS = 3V TA = 25/H11543C TPC 26. Common-Mode Rejection Ratio vs. Frequency FREQUENCY – Hz 1k 20M 10k COMMON-MODE REJECTION – dB 100k 1M 160 140 /H1154640 120 100 /H1154620 10M VS = 5V TA = 25/H11543C TPC 27. Common-Mode Rejection Ratio vs. Frequency FREQUENCY – Hz 100 10M 1k POWER SUPPLY REJECTION – dB 10k 100k 1M 120 VS = 5V TA = 25/H11543C /H1154640 /H1154620 100 140 160 TPC 28. Power Supply Rejection Ratio vs. Frequency VS = 2.7V RL = TA = 25/H11543C AV = 1 CAPACITANCE – pF 010 1k 100 SMALL SIGNAL OVERSHOOT – % /H11546OS +OS TPC 29. Small Signal Overshoot vs. Load Capacitance VS = 5V RL = TA = 25/H11543C AV = 1 CAPACITANCE – pF 010 1k 100 SMALL SIGNAL OVERSHOOT – % /H11546OS +OS TPC 30. Small Signal Overshoot vs. Load Capacitance

REV. D–10– AD8601/AD8602/AD8604 FREQUENCY – Hz 0.1

0.0001 THD + N – %

0.001 0.01 20 20k 100 1k 10k VS = 5V TA = 25/H11543C RL = 600/H9024 RL = 2k/H9024 RL = 10k/H9024 RL = 10k/H9024 RL = 2k/H9024RL = 600/H9024 G = 10 G = 1 TPC 34. Total Harmonic Distortion + Noise vs. Frequency VS = 2.7V TA = 25/H11543C FREQUENCY – kHz 05 1 0 15 20 25 VOLTAGE NOISE DENSITY – nV/ Hz TPC 35. Voltage Noise Density vs. Frequency VS = 2.7V TA = 25/H11543C FREQUENCY – kHz 104 130 156 182 208VOLTAGE NOISE DENSITY – nV/ Hz TPC 36. Voltage Noise Density vs. Frequency /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 1.2 1.0 SUPPLY CURRENT PER AMPLIFIER – mA 0.8 0.6 0.4 0.2 VS = 5V TPC 31. Supply Current per Amplifier vs. Temperature /H1154640 12520 65/H1154625 /H1154610 53 5 5 0 8 09 5 110 TEMPERATURE – /H11543C 1.0 0.8 SUPPLY CURRENT PER AMPLIFIER – mA 0.6 0.4 0.2 VS = 3V TPC 32. Supply Current per Amplifier vs. Temperature SUPPLY VOLTAGE – V 0.8 SUPPLY CURRENT PER AMPLIFIER – mA 0.7 0.4 0.3 0.2 0.1 0.6 0.5 0 612345 TPC 33. Supply Current per Amplifier vs. Supply Voltage

REV. D AD8601/AD8602/AD8604 –11– VOLTAGE – 2.5/H9262V/DIV TIME – 1s/DIV VS = 5V TA = 25/H11543C TPC 40. 0.1 Hz to 10 Hz Input Voltage Noise 50.0mV/DIV 200ns/DIV VS = 5V RL = 10k/H9024 CL = 200pF TA = 25/H11543C TPC 41. Small Signal Transient Response 50.0mV/DIV 200ns/DIV VS = 2.7V RL = 10k/H9024 CL = 200pF TA = 25/H11543C TPC 42. Small Signal Transient Response VS = 5V TA = 25/H11543C FREQUENCY – kHz 104 130 156 182 208VOLTAGE NOISE DENSITY – nV/ Hz TPC 37. Voltage Noise Density vs. Frequency VS = 5V TA = 25/H11543C FREQUENCY – kHz 05 1 0 15 20 25 64VOLTAGE NOISE DENSITY – nV/ Hz TPC 38. Voltage Noise Density vs. Frequency VOLTAGE – 2.5/H9262V/DIV TIME – 1s/DIV VS = 2.7V TA = 25/H11543C TPC 39. 0.1 Hz to 10 Hz Input Voltage Noise

REV. D–12– AD8601/AD8602/AD8604 VOLTAGE – 1V/DIV TIME – 2.0/H9262s/DIV VS = 5V RL = 10k/H9024 AV = 1 TA = 25/H11543C VIN VOUT TPC 46. No Phase Reversal VOLTAGE – V TIME – 100ns/DIV +0.1% ERROR VOUT /H115460.1% ERROR VIN VIN TRACE – 0.5V/DIV VOUT TRACE – 10mV/DIV VS = 5V RL = 10k/H9024 VO = 2V p-p TA = 25/H11543C TPC 47. Settling Time SETTLING TIME – ns 2.0 /H115462.0 OUTPUT SWING – V 1.5 /H115460.5 /H115461.0 /H115461.5 1.0 0.5 300 600 350 400 450 500 550 0.1% 0.01% 0.01%0.1% VS = 2.7V TA = 25/H11543C TPC 48. Output Swing vs. Settling Time VOLTAGE – 1.0V/DIV TIME – 400ns/DIV VS = 5V RL = 10k/H9024 CL = 200pF AV = 1 TA = 25/H11543C TPC 43. Large Signal Transient Response VOLTAGE – 500mV/DIV TIME – 400ns/DIV VS = 2.7V RL = 10k/H9024 CL = 200pF AV = 1 TA = 25/H11543C TPC 44. Large Signal Transient Response VOLTAGE – 1V/DIV TIME – 2.0/H9262s/DIV VS = 2.7V RL = 10k/H9024 AV = 1 TA = 25/H11543CVIN VOUT TPC 45. No Phase Reversal

4 VS = 5V

degree of precision than available from most CMOS amplifiers. voltages than previously achieved in these small packages. precision op amp application. limit how close the output voltage can get to the supply rail. 20 mV of the positive rail and within 15 mV of the negative rail. inherent to all rail-to-rail output amplifiers. the PMOS pair is active at the lower end. including the transition region. Figure 1. Burr Brown OPA2340UR Input Offset Figure 2. AD8602AR Input Offset Voltage vs.

and output ensure no signal clipping.

8 MHz gain-bandwidth product of the AD8601 ensures no

2 AD8601

Figure 6. A Complete 3 V 12-Bit 1 MHz A/D

2 AD8601 RL

Figure 7. Using the AD8601 as a DAC Output Figure 8. A PC100 Compliant Line Output Amplifier respect to the actual behavior of the AD860x.

REV. D–16– AD8601/AD8602/AD8604 OUTLINE DIMENSIONS 14-Lead Thin Shrink Small Outline Package [TSSOP] (RU-14) Dimensions shown in millimeters 4.50 4.40 4.30 14 8 6.40 BSC PIN 1 5.10 5.00 4.90 0.65 BSC SEATING PLANE 0.15 0.05 0.30 0.19 1.20 MAX 1.05 1.00 0.80 0.20 0.09 8/H11543 0/H11543 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153AB-1 COPLANARITY 0.10 5-Lead Small Outline Transistor Package [SOT-23] (RT-5) Dimensions shown in millimeters PIN 1 1.60 BSC 2.80 BSC 1.90 BSC

0.95 BSC

0.22 0.08 10/H11543 5/H11543 0/H11543 0.50 0.30

0.15 MAX SEATING

1.45 MAX

1.30 1.15 0.90

2.90 BSC

0.60 0.45 0.30 COMPLIANT TO JEDEC STANDARDS MO-178AA 14-Lead Standard Small Outline Package [SOIC] (R-14) Dimensions shown in millimeters and (inches) CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COPLANARITY 0.10 14 8 6.20 (0.2441) 5.80 (0.2283) 4.00 (0.1575) 3.80 (0.1496) 8.75 (0.3445) 8.55 (0.3366) 1.27 (0.0500) BSC SEATING PLANE 0.25 (0.0098) 0.10 (0.0039) 0.51 (0.0201) 0.31 (0.0122) 1.75 (0.0689) 1.35 (0.0531) 8/H11543 0/H11543 0.50 (0.0197) 0.25 (0.0098)/H11547 45/H11543 1.27 (0.0500) 0.40 (0.0157) 0.25 (0.0098) 0.17 (0.0067) COMPLIANT TO JEDEC STANDARDS MS-012AB 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters 0.80 0.60 0.40 8/H11543 0/H11543 4.90 BSC PIN 1

0.65 BSC

3.00 BSC SEATING PLANE 0.15 0.00 0.38 0.22

1.10 MAX

3.00 BSC COPLANARITY 0.10 0.23 0.08 COMPLIANT TO JEDEC STANDARDS MO-187AA 8-Lead Standard Small Outline Package [SOIC] (R-8) Dimensions shown in millimeters and (inches) 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) /H11547 45/H11543 8/H11543 0/H11543 1.75 (0.0688) 1.35 (0.0532) SEATING PLANE 0.25 (0.0098) 0.10 (0.0040) 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) BSC 6.20 (0.2440) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122)COPLANARITY 0.10 CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-012AA

REV. D AD8601/AD8602/AD8604 –17–

Revision History

11/03—Data Sheet changed from REV. C to REV. D. 3/03—Data Sheet changed from REV. B to REV. C. 3/03—Data Sheet changed from REV. A to REV. B.

–18–

–19–

C01525–0–11/03(D) –20–