AD8505ACBZ-R7

AD8505_16 AD | Alldatasheet

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Rev. E | Page 2 of 20 TABLE OF CONTENTS Four-Pole, Low-Pass Butterworth Filter for Glucose

REVISION HISTORY

5/10—Rev. D to Rev. E 10/09—Rev. C to Rev. D Moved Electrical Characteristics—1.8 V Operation Section, Moved Electrical Characteristics—5 V Operation Section, 3/09—Rev. B to Rev. C 10/08—Rev. A to Rev. B Changes to Input Capacitance Differential Mode Parameter Symbol and Input Capacitance Common Mode Parameter Changes to Input Capacitance Differential Mode Parameter Symbol and Input Capacitance Common Mode Parameter 7/08—Rev. 0 to Rev. A Changes to Features Section and General Description Section .. 1 Changed Electrical Characteristics Heading to Electrical Changes to Table 3, Thermal Resistance Section, and Table 4 .... 5 Added T A = 25°C Condition to Typical Performance Added Theory of Operation Section, Figure 41, and 11/07—Revision 0: Initial Version

Rev. E | Page 3 of 20 SPECIFICATIONS ELECTRICAL CHARACTERISTICS—1.8 V OPERATION VSY = 1.8 V , VCM = VSY/2, TA = 25°C, RL = 100 kΩ to GND, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 0 V ≤ V CM ≤ 1.8 V 0.5 2.5 mV Input Bias Current IB 1 10 pA −40°C ≤ TA ≤ +85°C 100 pA −40°C ≤ TA ≤ +125°C 600 pA Input Offset Current IOS 0.5 5 pA −40°C ≤ TA ≤ +85°C 50 pA −40°C ≤ TA ≤ +125°C 100 pA Input Voltage Range −40°C ≤ TA ≤ +125°C 0 1.8 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 1.8 V 85 100 dB −40°C ≤ TA ≤ +85°C 85 dB −40°C ≤ TA ≤ +125°C 80 dB Large-Signal Voltage Gain AVO 0.05 V ≤ VOUT ≤ 1.75 V, RL = 100 kΩ to VCM 95 115 dB −40°C ≤ TA ≤ +125°C 95 dB Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 2.5 μV/°C Input Resistance RIN 220 GΩ Input Capacitance, Differential Mode CINDM 3 pF Input Capacitance, Common Mode CINCM 4.2 pF OUTPUT CHARACTERISTICS Output Voltage High VOH R L = 100 kΩ to GND 1.78 1.79 V RL = 10 kΩ to GND 1.65 1.75 V Output Voltage Low VOL R L = 100 kΩ to VSY 2 5 mV −40°C ≤ TA ≤ +125°C 5 mV RL = 10 kΩ to VSY 12 25 mV −40°C ≤ TA ≤ +125°C 25 mV Short-Circuit Limit ISC V OUT = VSY or GND ±4.5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 1.8 V to 5 V 100 110 dB −40°C ≤ TA ≤ +85°C 100 dB −40°C ≤ TA ≤ +125°C 95 dB Supply Current per Amplifier ISY AD8506/AD8508 VOUT = VSY/2 16.5 20 μA −40°C ≤ TA ≤ +125°C 25 μA AD8505 VOUT = VSY/2 16.5 24 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 10 pF, G = 1 13 mV/μs Gain Bandwidth Product GBP RL = 1 MΩ, CL = 20 pF, G = 1 95 kHz Phase Margin ΦM RL = 1 MΩ, CL = 20 pF, G = 1 60 Degrees NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 2.8 μV p-p Voltage Noise Density en f = 1 kHz 45 nV/√Hz Current Noise Density in f = 1 kHz 15 fA/√Hz

Rev. E | Page 4 of 20 ELECTRICAL CHARACTERISTICS—5 V OPERATION VSY = 5 V , VCM = VSY/2, TA = 25°C, RL = 100 kΩ to GND, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 0 V ≤ V CM ≤ 5 V 0.5 2.5 mV Input Bias Current IB 1 10 pA −40°C ≤ TA ≤ +85°C 100 pA −40°C ≤ TA ≤ +125°C 600 pA Input Offset Current IOS 0.5 5 pA −40°C ≤ TA ≤ +85°C 50 pA −40°C ≤ TA ≤ +125°C 130 pA Input Voltage Range −40°C ≤ TA ≤ +125°C 0 5 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5 V 90 105 dB −40°C ≤ TA ≤ +85°C 90 dB −40°C ≤ TA ≤ +125°C 85 dB Large-Signal Voltage Gain AVO 0.05 V ≤ VOUT ≤ 4.95 V, RL = 100 kΩ to VCM 105 120 dB −40°C ≤ TA ≤ +125°C 100 dB Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 2 μV/°C Input Resistance RIN 220 GΩ Input Capacitance, Differential Mode CINDM 3 pF Input Capacitance, Common Mode CINCM 4.2 pF OUTPUT CHARACTERISTICS Output Voltage High VOH R L = 100 kΩ to GND 4.98 4.99 V RL = 10 kΩ to GND 4.9 4.95 V Output Voltage Low VOL R L = 100 kΩ to VSY 2 5 mV −40°C ≤ TA ≤ +125°C 5 mV RL = 10 kΩ to VSY 10 25 mV −40°C ≤ TA ≤ +125°C 30 mV Short-Circuit Limit ISC V OUT = VSY or GND ±45 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 1.8 V to 5 V 100 110 dB −40°C ≤ TA ≤ +85°C 100 dB −40°C ≤ TA ≤ +125°C 95 dB Supply Current per Amplifier ISY AD8506/AD8508 VOUT = VSY/2 15 20 μA −40°C ≤ TA ≤ +125°C 25 μA AD8505 −40°C ≤ TA ≤ +125°C 25.5 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 10 pF, G = 1 13 mV/μs Gain Bandwidth Product GBP RL = 1 MΩ, CL = 20 pF, G = 1 95 kHz Phase Margin ΦM R L = 1 MΩ, CL = 20 pF, G = 1 60 Degrees NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 2.8 μV p-p Voltage Noise Density en f = 1 kHz 45 nV/√Hz Current Noise Density in f = 1 kHz 15 fA/√Hz

Rev. E | Page 5 of 20 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 5.5 V Input Voltage ±VSY ± 0.1 V Input Current1 ±10 mA Differential Input Voltage2 ±V SY Output Short-Circuit Duration to GND Indefinite Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C 1 Input pins have clamp diodes to the supply pins. The input current should be limited to 10 mA or less whenever the input signal exceeds the power supply rail by 0.5 V.

2 The differential input voltage is limited to 5 V or the supply voltage, whichever

is less. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages with its exposed paddle soldered to a pad, if applicable. Table 4 shows simulated thermal values for a 4-layer (2S2P) JEDEC standard thermal test board, unless otherwise specified. Table 4. Package Type θJA θ JC Unit 5-Lead SOT-23 (RJ-5) 190 92 °C/W 6-Ball WLCSP (CB-6-7) 105 N/A °C/W 8-Lead MSOP (RM-8) 142 45 °C/W 8-Ball WLCSP (CB-8-2) 82 N/A °C/W 14-Lead TSSOP (RU-14) 112 35 °C/W 14-Ball WLCSP (CB-14-1) 64 N/A °C/W ESD CAUTION

the other emits light in the near IR (800 nm to 900 nm) region. Figure 49. Pulse Oximeter Red and Infrared Current Sources Using the

bias current at ambient temperature. (preceded by a one-pole, low-pass filter) is shown in Figure 50. is 297 μW typical at ambient temperature. Figure 50. A Four-Pole Butterworth Filter That Can Be Used in a Glucose Meter

0.95 BSC

0.15 MAX

0.05 MIN

1.45 MAX

0.95 MIN

0.20 MAX

0.08 MIN

0.50 MAX

0.35 MIN

Figure 51. 5-Lead Small Outline Transistor Package [SOT-23]

0.40 BSC

0.05 NOM

Figure 52. 6-Ball Wafer Level Chip Scale Package [WLCSP]

0.65 BSC

1.10 MAX

Figure 53. 8-Lead Mini Small Outline Package [MSOP] Figure 54. 8-Ball Wafer Level Chip Scale Package [WLCSP]

Figure 55. 14-Lead Thin Shrink Small Outline Package [TSSOP]

0.50 BSC

0.10 MAX

Figure 56. 14-Ball Wafer Level Chip Scale Package [WLCSP]

Rev. E | Page 20 of 20 ORDERING GUIDE Model1 Temperature Range Package Description Package Option Branding AD8505ARJZ-R2 −40°C to +125°C 5-Lead Small Outl ine Transistor Package [SOT-23] RJ-5 A2E AD8505ARJZ-R7 −40°C to +125°C 5-Lead Small Outl ine Transistor Package [SOT-23] RJ-5 A2E AD8505ARJZ-RL −40°C to +125°C 5-Lead Small Outl ine Transistor Package [SOT-23] RJ-5 A2E AD8505ACBZ-R7 −40°C to +125°C 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-7 A2H AD8505ACBZ-RL −40°C to +125°C 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-7 A2H AD8506ACBZ-REEL −40°C to +125°C 8-Ball Wafer Level Chip Scale Package [WLCSP] CB-8-2 A1X AD8506ACBZ-REEL7 −40°C to +125°C 8-Ball Wafer Level Chip Scale Package [WLCSP] CB-8-2 A1X AD8506ARMZ −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 A1X AD8506ARMZ-R7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 A1X AD8506ARMZ-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 A1X AD8508ARUZ −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 AD8508ARUZ-REEL −40°C to +125°C 14-Lead Thin Sh rink Small Outline Package [TSSOP] RU-14 AD8508ACBZ-REEL −40°C to +125°C 14-Ball Wafer Level Chip Scale Package [WLCSP] CB-14-1 A27 AD8508ACBZ-REEL7 −40°C to +125°C 14-Ball Wafer Level Chip Scale Package [WLCSP] CB-14-1 A27 1 Z = RoHS Compliant Part. ©2007–2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D06900-0-5/10(E)