AD85050 ESMT | Alldatasheet

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Technical content

Features

 16/18/20/24-bits input with I2S, Left-alignment and Right-alignment data format  Multiple sampling frequencies (Fs) 8kHz and 32kHz / 44.1kHz / 48kHz and 64kHz / 88.2kHz / 96kHz and 128kHz / 176.4kHz / 192kHz  System clock = 64x, 128x, 192x, 256x, 384x, 512x, 576x, 768x, 1024x Fs MCLK system: 256x~4096x Fs for 8kHz 64x~1024x Fs for 32kHz / 44.1kHz / 48kHz 64x~512x Fs for 64kHz / 88.2kHz / 96kHz 64x~256x Fs for 128kHz / 176.4kHz / 192kHz BCLK system: 64xFs for 32kHz / 44.1kHz / 48kHz 64xFs for 64kHz / 88.2kHz / 96kHz 64xFs for 128kHz / 176.4kHz / 192kHz  Supply voltage 1.8V or 3.3V for digital I/O 3.3V for analog circuit and headphone driver 4.5V~26V for loudspeaker driver  Speaker or headphone out selection  Line-driver maximum output swing into 10kΩ - 2Vrms at 3.3V supply voltage  Headphone output power 25mW x 2ch into 32Ω @ 0.1% THD+N  Speaker output power 30W x 2ch into 8Ω @ <1% THD+N@24V  Sound processing including: 36 bands parametric speaker EQ Volume control (+24dB~-103dB, 0.125dB/step) Dynamic range control Three Band plus post Dynamic range control Power Clipping Programmed 3D surround sound Channel mixing Noise gate with hysteresis window Bass/Treble tone control DC-blocking high-pass filter Pre-scale/post-scale Virtual Bass/exciter Dynamic bass  Anti-pop design  Level meter and power meter  I2S output with selectable audio DSP point  Supports I2C control without clock  I2C control interface with selectable device address  Internal PLL  Protection ■ OCP ■ OVP ■ UVP ■ OTP ■ DCP  Closed-loop structure with good PSRR

Applications

 Boom-box, CD and DVD receiver, docking system  Powered speaker  Wireless audio  AI speaker

Description

AD85050 is a digital audio amplifier capable of driving. a pair of 8Ω,30W or a single 4Ω,60W speaker output. In headphone output mode, it can delivered 25mW into 32Ω load for head phone output. AD85050 provides advanced audio processing functions, such as volume control, 36 EQ bands, audio mixing, 3D surround sound and Dynamic Range Control (DRC). These are fully programmable via a simple I2C control interface . Robust protection circuits are provided to protect AD85050 from damage due to accidental erroneous operating condition. The full digital circuit design of AD85050 is tolerant of noise and PVT (Process, Voltage, and Temperature) variation. AD85050 is pop free during instantaneous power on/off or mute/shut down switching because of its robust built-in anti-pop circuit.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 2/114 Pin Assignment SD Z BCLK AD 85050 SDATA LRCIN BSPL GPIO0 HVDD SA1 DVDD MCLK SA0 DGND D AC_O U TA AVD D SC L SD A AG N D HP _SPK D AC_O U TB CN G N D CP H VSS G VD D AVC C LIN P FAU LTB AM P_SD B R IN P N.C. PBTL PVCCL PGNDL OUTPL BSNL OUTNL OUTNR BSNR OUTPR PGNDR PVCCR BSPR TEST N.C . LIN N VREG R IN N G N D PIN NAME TYPE DESCRIPTION CHARACTERISTICS 1 AMP_SDB I Shut down for AMP, low active. With pull low resistor (250Kohm).

2 FAULTB O

Open drain output used to display short circuit or dc detect fault. Voltage compliant to AVCC. Short circuit faults can be set to auto-recovery by connecting FAULTB pin to AMP_SDB pin. Otherwise, dc detect faults must be reset by cycling AVCC. 3 LINP I Positive audio input for left channel. 4 LINN I Negative audio input for left channel. 5 AVCC P Analog supply. 6 SDZ O Shut down control for AMP. 7 DAC_OUTA O Analog output from DAC A channel. 8 AVDD P Power supply for analog circuit, 3.3V 9 AGND P Ground for analog circuit. 10 SDA I/O I2C bi-directional serial data. Schmitt trigger TTL input buffer 11 SCL I I2C serial clock input. Schmitt trigger TTL input buffer

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 3/114 12 HP_SPK I Head phone and speaker switch. Schmitt trigger TTL input buffer, with pull low resistor internally.

13 GPIO0 I/O

General purpose digital input and output. Port 0. Schmitt trigger TTL input buffer, with pull low resistor internally. 14 SA1 I I2C select address 1. Schmitt trigger TTL input buffer, with pull low resistor internally. 15 MCLK I Master clock input. Schmitt trigger TTL input buffer. 16 BCLK I Bit clock input (64Fs). Schmitt trigger TTL input buffer. 17 SDATA I Serial audio data input. Schmitt trigger TTL input buffer 18 LRCIN I Left/Right clock input (Fs). Schmitt trigger TTL input buffer. 19 SA0 I I2C select address 0. Schmitt trigger TTL input buffer, with pull low resistor internally. 20 TEST I This pin must connect to GND. With pull low resistor internally. 21 VREG O 1.8V Regulator voltage output. 22 DGND P Digital Ground. 23 DVDD P Digital I/O power, 1.8V or 3.3V. 24 HVDD P Supply voltage for headphone driver, 3.3V.

25 CP O

Charge-pump flying capacitor positive terminal. 26 GND P Power ground.

27 CN O

Charge-pump flying capacitor negative terminal.

28 HVSS P

Negative supply voltage for headphone driver. 29 N.C. Not connected. 30 DAC_OUTB O Analog output from DAC B channel.

31 GVDD O

5V regulated output, also used as supply for PLIMIT function. 32 GND P Power ground. 33 RINN I Negative audio input for right channel. 34 RINP I Positive audio input for right channel. 35 N.C. I Not connected.

36 PBTL I

Parallel BTL mode switch, high for parallel BTL output. Voltage compliance to AVCC. With pull low resistor internally.

37 PVCCR P

High-voltage power supply for right-channel. Channel power supply inputs are connected in chip internally.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 4/114

38 BSPR O

Bootstrap I/O for right channel, positive high side FET

39 OUTPR O

Class-D H-bridge positive output for right channel 40 PGNDR P Power ground for the H-bridges.

41 OUTNR O

Class-D H-bridge negative output for right channel.

42 BSNR O

Bootstrap I/O for right channel, negative high side FET.

43 BSNL O

Bootstrap I/O for left channel, negative high side FET.

44 OUTNL O

Class-D H-bridge negative output for left channel. 45 PGNDL P Power ground for the H-bridges.

46 OUTPL O

Class-D H-bridge positive output for left channel.

47 BSPL O

Bootstrap I/O for left channel, positive high side FET.

48 PVCCL P

High-voltage power supply for left-channel. Left channel and Right channel power supply inputs are connected in chip internally.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 5/114 Functional Block Diagram

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 6/114

Ordering Information

Product ID Package Packing / MPQ Comments AD85050-LG48NRY E-LQFP 48L (7mm x 7mm)

250 Units / Tray

2.5K Units / Box (10 Trays) Green AD85050-LG48NRR E-LQFP 48L (7mm x 7mm) 2K Units / Reel

1 Reel / Small box

Package Type Device No. θ ja(℃/W) Ψ jt(℃/W) θ jt(℃/W) Exposed Thermal Pad E-LQFP 48L AD85050 22.9 1.64 34.9 Yes (Note1) Note 1.1: The thermal pad is located at the bottom of the package. To optimize thermal performance, soldering the thermal pad to the PCB’s ground plane is suggested. Note 1.2: θ ja, the junction-to-ambient thermal resistance is simulated on a room temperature (TA=25℃), natural convection environment test board , which is constructed with a thermally efficient, 4 -layers PCB (2S2P). The simulation is tested using the JESD51-5 thermal measurement standard. Note 1.3: Ψjt represents the thermal parameter for the heat flow between the chip junction and the package ’s top surface center. It’s extracted from the simulation data for obtaining θ ja, using a procedure described in JESD51-2. Note 1.4: θ jt represents the thermal resistance for the heat flow between the chip junction and the package’s top surface. It’s extracted from the simulation data with obtaining a cold plate on the package top. Marking Information AD85050 Line 1 : LOGO Line 2 : Product no. Line 3 : Tracking Code PIN 1 DO T ESM T AD 85050 Tracking Code

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 7/114 Absolute Maximum Ratings (AMR) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. Symbol Parameter Min Max Units DVDD Supply for Digital I/O Circuit -0.3 3.6 V AVDD Supply for Analog Circuit -0.3 3.6 V HVDD Supply for Headphone Driver -0.3 3.6 V PVCCL/R Supply for Driver Stage -0.3 30 V AVCC Supply for Driver Stage Analog Circuit -0.3 30 V Vi Input Voltage for AMP_SDB, FAULTB, PBTL -0.3 30 V Input Voltage for the other pins -0.3 3.6 V Tstg Storage Temperature -65 150 oC TJ Junction Operating Temperature 0 150 oC RL Minimum Load Resistance BTL (Stereo) 3.2  PBTL (Mono) > 18V 3.2  PBTL (Mono) ≦ 18V 1.6  ESD Human Body Model ±2K V Charged Device Model ±500 V Recommended Operating Conditions Symbol Parameter Typ Units DVDD Supply for Digital I/O Circuit for 1.8V 1.65~1.95 V Supply for Digital I/O Circuit for 3.3V 3.0~3.6 AVDD Supply for Analog Circuit 3.0~3.6 V HVDD Supply for Headphone Driver 3.0~3.6 V PVCC Supply for Driver Stage PVCCL/R 4.5~26 V AVCC Supply for Driver Stage Analog Circuit 4.5~26 V TJ Junction Operating Temperature -40~125 oC TA Ambient Operating Temperature -40~85 oC

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 8/114 General Electrical Characteristics Condition: PVCC=24V, RL=8TA=25°C, (unless otherwise noted). SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT IQ(PVCC) Quiescent supply current AMP_SDB=2V, no load, PVCC=12V 13 26 mA IQ(AVCC) Quiescent supply current for PVCC 7.1 15 mA IQ(HVDD) Quiescent supply current for HVDD 47 53 mA IQ(AVDD) Quiescent supply current for AVDD 12 20 mA IQ(DVDD) Quiescent supply current for DVDD DVDD=1.8V 15 50 uA DVDD=3.3V 29 65 ISD(PVCC) Quiescent supply current in shutdown mode AMP_SDBD=0.8V, no load, PVCC=12V < 12 25 uA UV(AVDD) AVDD Under-Voltage Active Threshold 2.66 V AVDD Under-Voltage Release Threshold 2.74 UV(HVDD) HVDD Under-Voltage Active Threshold 2.66 V HVDD Under-Voltage Release Threshold 2.74 RDS(on) Drain-source on-state resistance-High side NMOS PVCC=12V, Id=500mA, TJ=25 oC 90 m Drain-source on-state resistance-Low side NMOS 90 m |VOS| Class-D output offset voltage (measured differential) PVCC=12V VI=0V 1.5 15 mV tON Turn-on time AMP_SDB=2V 90 ms tOFF Turn-off time AMP_SDB=0.8V 2 us GVDD 5V regulator output IGVDD=0.1mA 4.75 5 5.25 V

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 9/114 VREG 1.8V regulator output 1.71 1.8 1.89 V G Gain Value represents the “peak voltage” disregarding clipping due to lower PVCC). Measured at 0 dB input(1FS) and all volume gain at 0dB 28 V fOSC Oscillator frequency 250 310 370 kHz ISC LI Channel Over Current Protection 8 A Mono Over-Current Protection 16 A VIH High-Level Input Voltage DVDD=1.8V 1.3 V DVDD=3.3V 2.0 AMP_SDB ; PBTL pin 2.0 VIL Low-level Input Voltage DVDD=1.8V 0.5 V DVDD=3.3V 0.8 AMP_SDB ; PBTL pin 0.8 VOH High-Level Output Voltage DVDD=1.8V 1.2 V DVDD=3.3V 2.4 VOL Low-Level Output Voltage DVDD=1.8V 0.2 V DVDD=3.3V 0.4 CI Input Capacitance 6.4 pF

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 10/114 Application Circuit Example for Stereo Note. The under-voltage threshold for AVCC could be adjusted by RAVCC, the formula will be followed   K30 4-AVCCRAVCC , RAVCC=100ohm minimum is requirement in AD85050.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 11/114 Application Circuit Example for Mono Note. The under-voltage threshold for AVCC could be adjusted by RAVCC, the formula will be followed   K30 4-AVCCRAVCC , RAVCC=100ohm minimum is requirement in AD85050.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 12/114 Electrical Characteristics and Specifications for Loudspeaker  BTL (Bridge-Tied-Load) output for Stereo Condition: TA=25oC, DVDD=HVDD=AVDD=3.3V, PVCC=24V, FS=48kHz, Load=8; Input is 1kHz sine-wave unless otherwise specified. Symbol Parameter Condition Input Level Min Typ Max Units PO (Note 3) RMS Output Power (THD+N < 1%) 30 W RMS Output Power (THD+N=0.1%) 15 W RMS Output Power (THD+N=10%) for PVCC=12V 10 W THD+N Total Harmonic Distortion + Noise PO=10W 0.08 % SNR Signal to Noise Ratio (Note 2) Maximum power at THD < 1% @1kHz 103 dB DR Dynamic Range (Note 2) -60dB 108 dB Vn Output Noise (Note 2) 20Hz to 20kHz 120 uV PSRR Power Supply Rejection Ratio VRIPPLE=1VRMS at 1kHz -70 dB Channel Separation 1W @1kHz -95 dB Note 2: Measured with A-weighting filter. Note 3: Thermal dissipation is limited by package type and PCB design. The external heat-sink or system cooling method should be adopted for maximum power output. Total Harmonic Distortion + Noise vs. Output Power ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 24v LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 18v LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 12V LCH 4 1 Cyan Solid 3 Anlr.THD+N Ratio Left 5V LCH 0.01 0.02 0.05 0.1 0.2 0.5 10m 60 20m 50m 100m 200m 500m 1 2 5 10 20 W Load=8ohm Stereo 24V 18V 12V

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 13/114 Total Harmonic Distortion + Noise vs. Output Power ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 16V 1kHz LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 12V LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 7.4v LCH 4 1 Cyan Solid 3 Anlr.THD+N Ratio Left 5V LCH 0.01 0.02 0.05 0.1 0.2 0.5 10m 100 20m 50m 100m 200m 500m 1 2 5 10 20 50 W Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 24v 30W LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 20W LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 10W LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz 30W 20W 10W 24V, Load=8ohm Stereo Load=4ohm Stereo 16V 12V 7.4V

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 14/114 Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 16v 20W LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 10W LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 5W LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 12V 5W LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 2.5W LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 1W LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz 2.5W 12V, Load=8ohm Stereo 16V, Load=4ohm Stereo 20W 10W

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 15/114 Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 12V 15w LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 10W LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 5W LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz Cross-talk ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Crosstalk Left 24v L==>R 2 1 Blue Solid 3 Anlr.Crosstalk Left R==>L -120 -115 -110 -105 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 d B 20 20k 50 100 200 500 1k 2k 5k 10k Hz TTTTTTTTTT T LCHRCH RCHLCH 24V, Load=8ohm Stereo, Po=1W 12V, Load=4ohm Stereo 15W 10W

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 16/114 Cross-talk ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Crosstalk Left L==>R 2 1 Blue Solid 3 Anlr.Crosstalk Left R==>L -120 -115 -110 -105 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 d B 20 20k 50 100 200 500 1k 2k 5k 10k Hz TTTTTTTTTTTTTTTT Noise Level ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left 1 2 Blue Solid 3 Anlr.Ampl Left 150u 10u 20u 30u 40u 50u 60u 70u 80u 90u 100u 110u 120u 130u 140u V 20 20k 50 100 200 500 1k 2k 5k 10k Hz LCH RCH 24V, Load=8ohm Stereo 12V, Load=4ohm Stereo, Po=1W

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 17/114 Noise Level ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left 1 2 Blue Solid 3 Anlr.Ampl Left 150u 10u 20u 30u 40u 50u 60u 70u 80u 90u 100u 110u 120u 130u 140u V 20 20k 50 100 200 500 1k 2k 5k 10k Hz Efficiency (Stereo 8ohm load) / 2ch 100 0 10 20 30 40 50 60 70 80 Efficiency (%) Output Power (W)*2CH PVCC=24V PVCC=18V PVCC=12V PVCC=5V 24V, Load=4ohm Stereo LCH RCH

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 18/114 Efficiency (Stereo 4ohm load) / 2ch 100 0 20 40 60 80 100 120 140 Efficiency (%) Output Power (W)*2CH PVCC=24V PVCC=18V PVCC=12V PVCC=5V Output Power vs. Supply Voltage (BTL, 8ohm) 4 6 8 10 12 14 16 18 20 22 24 Output Power (W) Supply Voltage (V) THD=1% THD=10%

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 19/114 Output Power vs. Supply Voltage (BTL, 6ohm) 4 6 8 10 12 14 16 18 20 22 24 Output Power (W) Supply Voltage (V) THD=1% THD=10% Note: Dashed Line represent thermally limited regions. Output Power vs. Supply Voltage (BTL, 4ohm) 4 6 8 10 12 14 16 18 20 22 Output Power (W) Supply Voltage (V) THD=1% THD=10% Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 20/114 Electrical Characteristics and Specifications for Loudspeaker  PBTL (Parallel Bridge-Tied-Load) output for Mono Condition: TA=25oC, DVDD=HVDD=AVDD=3.3V, PVCC=24V, FS=48kHz, Load=4; Input is 1kHz sine-wave unless otherwise specified. Symbol Parameter Condition Input Level Min Typ Max Units PO (Note 3) RMS Output Power (THD+N < 1%) 60 W RMS Output Power (THD+N=0.1%) 30 W RMS Output Power (THD+N=10%) for PVCC=12V 20 W THD+N Total Harmonic Distortion + Noise PO=20W 0.08 % SNR Signal to Noise Ratio (Note 2) Maximum power at THD < 1% @1kHz 103 dB DR Dynamic Range (Note 2) -60dB 109 dB Vn Output Noise (Note 2) 20Hz to 20kHz 105 uV Note 2: Measured with A-weighting filter. Note 3: Thermal dissipation is limited by package type and PCB design. The external heat-sink or system cooling method should be adopted for maximum power output. Total Harmonic Distortion + Noise vs. Output Power ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 24v 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 18V 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 12V 4 1 Cyan Solid 3 Anlr.THD+N Ratio Left 5v 0.01 0.02 0.05 0.1 0.2 0.5 10m 100 20m 50m 100m 200m 500m 1 2 5 10 20 50 W Load=4ohm Mono 24V 18V 12V

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 21/114 Total Harmonic Distortion + Noise vs. Output Power ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 18v 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 12V 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 7.4V 4 1 Cyan Solid 3 Anlr.THD+N Ratio Left 5V 0.01 0.02 0.05 0.1 0.2 0.5 10m 100 20m 50m 100m 200m 500m 1 2 5 10 20 50 W Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 24V 40W 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 30W 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 20W 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz 24V Load=4ohm Mono 40W 30W 20W Load=2ohm Mono 18V 12V 7.4V

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 22/114 Total Harmonic Distortion + Noise vs. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 12v 25W 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 15W 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 10W 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 20k 50 100 200 500 1k 2k 5k 10k Hz Noise ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left 24V 150u 10u 20u 30u 40u 50u 60u 70u 80u 90u 100u 110u 120u 130u 140u V 20 20k 50 100 200 500 1k 2k 5k 10k Hz 24V Load=4ohm Mono 25W 15W 10W 12V Load=2ohm Mono

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 23/114 Noise ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left 150u 10u 20u 30u 40u 50u 60u 70u 80u 90u 100u 110u 120u 130u 140u V 20 20k 50 100 200 500 1k 2k 5k 10k Hz Efficiency (Mono 4ohm load) 100 0 10 20 30 40 50 60 70 Efficiency (%) Output Power (W) PVCC=24V PVCC=18V PVCC=12V PVCC=5V 12V Load=2ohm Mono

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 24/114 Efficiency (Mono 2ohm load) 100 0 10 20 30 40 50 60 70 80 90 100 Efficiency (%) Output Power (W)*2CH PVCC=18V PVCC=12V PVCC=7.4V PVCC=5V Output Power vs. Supply Voltage (PBTL, 4ohm) 4 6 8 10 12 14 16 18 20 22 24 Output Power (W) Supply Voltage (V) THD=1% THD=10%

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 25/114 Output Power vs. Supply Voltage (PBTL, 2ohm) 4 6 8 10 12 14 16 18 20 Output Power (W) Supply Voltage (V) THD=1% THD=10% Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 26/114 Electrical Characteristics and Specifications for DAC Output  DAC output for Stereo Condition: AVDD=HVDD=DVDD=3.3V, Fs=48kHz, CFLY=CHVSS=1μF, CHVDD=1μF, RL=10kΩ, TA=25°C (unless otherwise noted) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT VO Output Voltage (In Phase) At THD+N=1%, fIN=1kHz 2.0 2.3 Vrms At THD+N=1%, fIN=1kHz, RL=32ohm 25 mW THD+N Total Harmonic Distortion Plus Noise VO=2Vrms, fIN=1kHz 0.17 Pout=20mW, fIN=1kHz, RL=32ohm 0.02 SNR Signal to Noise Ratio Output at THD+N=1%, fIN=1kHz 100 109 dB Output at THD+N=1%, fIN=1kHz, RL=32ohm 95 103 Crosstalk Channel Separation VO=2Vrms, fIN=1kHz -90 dB Pout=10mW, fIN=1kHz, RL=32ohm -80 |VOS| Output Offset Voltage Input Grounded ±1 mV VN Output Noise 8 18 μVrms PSRR fIN=1kHz, 200mVpp ripple 63 70 dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 27/114 THD + N (%) v.s. Output power ColorSweep Trace Line Style Thick Data Axis Comment 2 1 Red Solid 3 Anlr.THD+N Ratio Left 3.3V LCH 2 3 Blue Solid 3 Anlr.THD+N Ratio Left 3.3V RCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10u 200m 20u 50u 100u 200u 500u 10m 20m 50m W THD + N (%) v.s. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 3.3V 20mW LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 10mW LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 5mW LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Hz T T T AVDD=HVDD=DVDD=3.3V Load=32Ohm OUTA OUTB AVDD=HVDD=DVDD=3.3V Load=32Ohm Po=20mW Po=10mW Po=5mW

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 28/114 Crosstalk ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Crosstalk Left 3.3V A==>B 2 1 Blue Solid 3 Anlr.Crosstalk Left B==>A -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 d B 20k 100 200 500 10k Hz Frequency Response ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Level A Left OUTA 1 2 Blue Solid 3 Anlr.Level B Right 3.3OUTB -0.8 -0.6 -0.4 -0.2 +0.2 +0.4 +0.6 +0.8 d B r B -0.8 -0.6 -0.4 -0.2 +0.2 +0.4 +0.6 +0.8 d B r A 20k 100 200 500 10k Hz OUTAOUTB OUTBOUTA AVDD=HVDD=DVDD=3.3V Load=32Ohm OUTA OUTB AVDD=HVDD=DVDD=3.3V Load=32Ohm

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 29/114 Noise ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left 3.3V OUTA 1 2 Blue Solid 3 Anlr.Ampl Left 3.3V OUTB 30u 10u 12u 14u 16u 18u 20u 22u 24u 26u 28u V 20k 100 200 500 10k Hz AVDD=HVDD=DVDD=3.3V Load=32Ohm OUTA OUTB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 30/114 THD + N (%) v.s. Output power ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left OUTA 1 3 Blue Solid 3 Anlr.THD+N Ratio Left OUTB 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10m 20m 50m 100m 200m 500m V THD + N (%) v.s. Frequency ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.THD+N Ratio Left 3.3V 2V LCH 2 1 Blue Solid 3 Anlr.THD+N Ratio Left 1V LCH 3 1 Magenta Solid 3 Anlr.THD+N Ratio Left 0.5V LCH 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Hz AVDD=HVDD=DVDD=3.3V Load=10kOhm AVDD=HVDD=DVDD=3.3V Load=10kOhm Po=2V Po=1V Po=0.5V OUTA OUTB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 31/114 Crosstalk ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Crosstalk Left OUTA==>OUTB 2 1 Blue Solid 3 Anlr.Crosstalk Left OUTB==>OUTA -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 d B 20k 100 200 500 10k Hz T Frequency Response ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Level A Left 1 2 Blue Solid 3 Anlr.Level B Right -0.8 -0.6 -0.4 -0.2 +0.2 +0.4 +0.6 +0.8 d B r B -0.8 -0.6 -0.4 -0.2 +0.2 +0.4 +0.6 +0.8 d B r A 20k 100 200 500 10k Hz OUTAOUTB OUTBOUTA AVDD=HVDD=DVDD=3.3V Load=10kOhm OUTA OUTB AVDD=HVDD=DVDD=3.3V Load=10kOhm

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 32/114 Noise ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Red Solid 3 Anlr.Ampl Left OUTA 1 2 Blue Solid 3 Anlr.Ampl Left OUTB 30u 10u 12u 14u 16u 18u 20u 22u 24u 26u 28u V 20k 100 200 500 10k Hz OUTA OUTB AVDD=HVDD=DVDD=3.3V Load=10kOhm

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 33/114 Interface configuration  I2S MSB LSB MSB LSB Left RightLRCIN BCLK SDATA  Left-Alignment MSB LSB MSB LSB Left RightLRCIN BCLK SDATA  Right-Alignment MSB LSB Left Right MSB LSBSDATA BCLK LRCIN  System Clock Timing BCLK tHIGH t LOW t PERIOD tHIGH ≧ 162.7 ns , t LOW ≧ ns , t PERIOD ≧ ns Default setting,PLL is enable BCLK system162.7 325.4  Timing Relationship (Using I2S format as an example)

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 34/114 LRCIN BCLK SDATA Left Right MSB MSB t LR tBL tLB tBCC tDS tDH tBCH tBCL Symbol Parameter Min Typ Max Units tLR LRCIN Period (1/FS) 5.2 31.25 s tBL BCLK Rising Edge to LRCIN Edge 25 ns tLB LRCIN Edge to BCLK Rising Edge 25 ns tBCC BCLK Period (1/64FS) 81.38 488.3 ns tBCH BCLK Pulse Width High 40.69 244 ns tBCL BCLK Pulse Width Low 40.69 244 ns tDS SDATA Set-Up Time 25 ns tDH SDATA Hold Time 25 ns  I2C Timing tf tHD;STA tLOW tr tHD;DAT tSU;DAT tf tHIGH tSU;STA tHD;STA tSU;STO tr tBUF S Sr P S Parameter Symbol Standard Mode Fast Mode Unit MIN. MAX. MIN. MAX. SCL clock frequency fSCL 0 100 0 400 kHz Hold time for repeated START condition tHD,STA 4.0 --- 0.6 --- s LOW period of the SCL clock tLOW 4.7 --- 1.3 --- s HIGH period of the SCL clock tHIGH 4.0 --- 0.6 --- s Setup time for repeated START condition tSU;STA 4.7 --- 0.6 --- s Hold time for I2C bus data tHD;DAT 0 3.45 0 0.9 s Setup time for I2C bus data tSU;DAT 250 --- 100 --- ns

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 35/114 Rise time of both SDA and SCL signals tr --- 1000 --- 300 ns Fall time of both SDA and SCL signals tf --- 300 --- 300 ns Setup time for STOP condition tSU;STO 4.0 --- 0.6 --- s Bus free time between STOP and the next START condition Capacitive load for each bus line Cb 400 400 pF  Power on sequence for Fs=48KHz DVDD AVDD / H V D D M C L K B C L K DAC _ O U T A DAC _ O U T B I2 C S o ftw a re re s e t P o w e r-O n N o rm a l O p e ra tio n P V C C L/R L R C I N S D A T A P B T L (M o n o) t10O U T P R/ O U R P L/ O U T N R / O U T N L W a it F s s e ttin g/o th e r c o n tro l Un m u te A M P _ S D B Symbol Condition Min Max Units t1 0 - msec

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 36/114 t2 0 - msec t3 0 - msec t4 0 - msec t5 0 - msec t6 1 msec t7 20 - msec t8 20 - msec t9 10 msec t10 150 msec  Power on sequence for 96KHz # 1t3 # 2 t10 t11 # 3 t12 t14 t13 # 4 t15 P V C C L/R DVDD AVDD H V D D I2 C M C L K B C L K L R C I N S D A T A A M P _ S D B DAC _ O U T A DAC _ O U T B O U T P R/O U T N R O U T P L/O U T N L P o w e r O n N o r m a l O p e r a tio n A M P _ S D B= L N o r m a l O p e r a tio n P B T L (M o n o) #1: Steps #2: Steps 1) Set s/w reset bit=0 1) Set all channel=unmute 2) Delay 5ms # 3: Steps 3) Set s/w reset bit=1 1) Set all channel=mute 4) Delay 20ms #4: Steps 5) Set all channels=mute 1) Set all channel=unmute 6) Set I2S as Fs=96KHz #5: If reg0x1C B[2]=0, max. is 35ms 7) Set other registers, except (all channels=mute) If reg0x1C B[2]=1, max. is 280ms

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 37/114 Symbol Min Max Units Symbol Min Max Units t1 0 - msec t10 10 - msec t2 0 - msec t11 - #5 msec t3 5 - msec t12 0.01 - msec t4 20 - msec t13 160 - msec t5 0 - msec t14 - 150 msec t6 0 - msec t15 10 - msec t7 1 msec t8 160 - msec t9 - 150 msec  Power off sequence DVDD AVDD / H V D D M C L K B C L K DAC _O U T A DAC _O U T B PV C C L/R L R C IN SD A T A A M P_SD B O U T PR/ O U R PL/ O U T N R/ O U T N L I2C M ute t2 Symbol Condition Min Max Units

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 38/114 35 (FADE_SPEED=0) 280 (FADE_SPEED=1) - msec t2 0.1 - msec t3 0.1 - msec t4 1 - msec t5 1 - msec t6 0 - msec t7 1 msec t8 0.01 msec

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 39/114 Operation Description AD85050 has a built-in PLL internally, the default volume is muted. AD85050 will activate while the de-mute command via I2C is programmed.  DAC Output for headphone A conventional inverting headphone amplifier always requires an output dc-blocking capacitor and a bypass capacitor. DC blocking capacitors are large in size and cost a lot. It also restricts the output low frequency response. POP will occur if the charge and discharge processes on output capacitors are not carefully take cared. Besides, it needs to wait for a long time to charge output from 0V to 1/2 bias voltage. A cap -less DAC, a negative supply voltage is produced by the integrated charge -pump, and feeds to headphone driver’s negative supply instead of ground. The DAC output is biased at ground which can eliminate the output dc-blocking capacitors. The output voltage swing is doubled compared to conventional amplifiers.  Anti-pop design AD85050 will generate appropriate control signals to suppress pop sounds during initial power on/off, power down/up, mute, and volume level changes.  3D surround sound AD85050 provides the virtual surround sound technology with greater separation and depth voice quality for stereo signals.  Shutdown control Pulling AMP_SDB pin low will let AD85050 operate in low -current state for power conservation. The AD85050 outputs will enter mute once AMP_SDB pin is pulled low, and regulator (GVDD) will also disable to save power. If let AMP_SDB pin floating, the chip will enter shutdown mode because of the internal pull low resistor. For the best power -off performance, place the chip in the shutdown m ode in advance of removing the power supply.  HP_SPK control Pulling HP_SPK pin high (HP mode) will let SDZ pin operate in low state, connect the SDZ pin directly to AMP_SDB pin. The AMP output will be turned off. Pulling HP_SPK pin low (SPK mode) will le t SDZ pin operate in high state, connect the SDZ pin directly to AMP_SDB pin. The AMP output will be turned on.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 40/114 > 0 .1 mS DVDD A M P _ S D B P B T L P V C C L/R > 0 .1 mS DVDD A M P _ S D B P B T L P V C C L/R  PBTL (mono) function AD85050 provides the application of parallel BTL operation with two outputs of each channel connected directly. If the PBTL pin is tied high, the positive and negative outputs of left and right channel are synchronized and in phase. Apply the input signal to the RIGHT channel input in PBTL mode and let the LEFT channel input grounded, and place the speaker between the LEFT and RIGHT outputs. The output swing is doubled of that in normal mode. See the application circuit example for PBTL (Mono) mode operation. For normal BTL (Stereo) operation, connect the PBTL pin to ground. Due to the positive and negative outputs are synchronized and in phase, PBTL pin voltage threshold shall be taken care in power off state to avoid the output channel short directly in mono configuration. The PBTL pin can’t go to Low status when AMP_SDB=High. The timing shall be taken care in Mono configuration  Under-voltage detection When the GVDD voltage is lower than 2.8V or the AVCC voltage is lower than 4V, loudspeaker drivers of right/left channel will be disabled and kept at low state. Otherwise, AD85050 return to normal operation. When HVDD and AVDD voltage are lower than 2.6V, DAC output will be off.  DC detection AD85050 has dc detection circuit to protect the speakers from DC current which might be occurred as input capacitor defect or inputs short on printed circuit board. The detection circuit detects first volume amplifier stage output, when both differential outputs’ voltage become higher than a determined voltage or lower than a determined voltage for more than 420ms, the dc detect error will occur and report to FAULTB pin. At the same time, loudspeaker drivers of right/left channel will disable and enter Hi-Z. This fault can not be cleared by cycling AMP_SDB pin, it is necessary to cycle the PVCC supply. The equivalent class-D output duty of the DC detect threshold is listed in table 1.

Table 1. Output DC Detect Duty (for Either Channel) status will be released as PVCC lower than 29V. output overload is detected again. of protected temperature is about 10%. Thermal protection faults are NOT reported on the FAULTB pin.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 42/114  Internal PLL AD85050 has a built -in PLL internally, the BCLK/FS or MCLK/ FS ratio, which is selected by I 2C control interface. The clock inputted into the BCLK or MCLK pin becomes the frequency of multiple edge evaluation in chip internally. Fs BCLK/FS Setting Ratio for PLL BCLK Frequency Multiple edge evaluation for bit clock PWM Frequency 48kHz 64x 3.072MHz 16x 310kHz 44.1kHz 64x 2.8224MHz 16x 310kHz 32kHz 64x 2.048MHz 16x 310kHz Fs MCLK/FS Setting Ratio for PLL MCLK Frequency Multiple edge evaluation for Master clock PWM Frequency 48kHz 256x 12.288MHz 4x 310kHz 44.1kHz 256x 11.2896MHz 4x 310kHz 32kHz 256x 8.192MHz 4x 310kHz 8kHz 256x 2.048MHz 16x 310kHz

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 43/114

Application information

 Input capacitors (Cin) The performance at low frequency (bass) is affected by the corner frequency (f c) of the high -pass filter composed of input resistor (R in=60KΩ ) and input capacitor (C in), determined in equation (2). Typically, a 0.1F or 1F ceramic capacitor is suggested for Cin.  HzCR 2 inin c  Ferrite Bead selection If the traces from the AD85050 to speaker are short, the ferrite bead filters can reduce the high frequency emissions to meet FCC requirements. A ferrite bead that has very low impedance at low frequency and high impedance at high frequency (above 1MHz) is recommended. The impedance of the ferrite bead can b e used along with a small capacitor with a value around 1000pF to reduce the frequency spectrum of the signal to an acceptable level. FB 1000pF 1000pFFB OUTP OUTN Figure 1. Typical Ferrite Bead Filter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 45/114 I2C-Bus Transfer Protocol  Introduction AD85050 employs I 2C-bus transfer protocol. Two wires, serial data and serial clock carry information between the devices connected to the bus. Each device is recognized by a unique 7 -bit address and can operate as either a transmitter or a receiver. The master device initiates a data transfer and provides the serial clock on the bus. AD85050 is always an I2C slave device.  Protocol  START and STOP condition START is identified by a high to low transition of the SDA signal. A START condition must precede any command for data transfer. A STOP is identified by a low to high transition of the SDA signal. A STOP condition terminates communication between AD85050 and the master device on the bus. In both START and STOP, the SCL is stable in the high state.  Data validity The SDA signal must be stable during the high period of the clock. The high or low change of SDA only occurs when SCL signal is low. AD85050 samples the SDA signal at the rising edge of SCL signal.  Device addressing The master generates 7 -bit address to recognize slave devi ces. When AD8 5050 receives 7 -bit address matched with 0110x0y (where x and y can be selected by external SA0 and SA1 pins, respectively), AD85050 will acknowledge at the 9 th bit (the 8th bit is for R/W bit). The bytes following the device identification address are for AD85050 internal sub-addresses.  Data transferring Each byte of SDA signaling must consist of 8 consecutive bits, and the byte is followed by an acknowledge bit. Data is transferred with MSB first, as shown in the figure below. In both write and read operations, AD85050 supports both single -byte and multi -byte transfers. Refer to the figure below for detailed data-transferring protocol. R/W ACK DEV_ADDR SUB_ADDR STOP DATAIN START ACK ACK START DEV_ADDR SUB_ADDR DEV_ADDR DATAIN STOP R/W ACK ACK NO ACK START START DEV_ADDR SUB_ADDR DEV_ADDR DATAIN STOP R/W ACK ACK ACK START R/W R/W DATAIN NO ACK Byte Write Random Address Read Sequential Random Read START DEV_ADDR SUB_ADDR DATAIN DATAIN STOP R/W ACK ACK ACK ACK Multi-Byte Write ACK ACK ACK

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 46/114 Register Table The AD85050’s audio signal processing data flow is shown below. Users can control these functions by programming appropriate settings in the register table. In this section, the register table is summarized first. The definition of each register follows in the next section. One band DRC Dual band DRC

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 47/114 Three bands DRC – Type 1 Three bands DRC – Type 2

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 48/114 Register Table Address Name B[7] B[6] B[5] B[4] B[3] B[2] B[1] B[0] Default 0X00 SCTL1 IF[2] IF[1] IF[0] Reserved Reserved Reserved Reserved LREXC 0X00 0X01 SCTL2 BCLK_SEL FS[2] FS[1] FS[0] PMF[3] PMF[2] PMF[1] PMF[0] 0X91 0X02 SCTL3 Reserved MUTE CM1 CM2 CM3 CM4 CM5 CM6 0X00 0X03 MVOL MV[7] MV[6] MV[5] MV[4] MV[3] MV[2] MV[1] MV[0] 0XFF 0X04 C1VOL C1V[7] C1V[6] C1V[5] C1V[4] C1V[3] C1V[2] C1V[1] C1V[0] 0X18 0X05 C2VOL C2V[7] C2V[6] C2V[5] C2V[4] C2V[3] C2V[2] C2V[1] C2V[0] 0X18 0X06 C3VOL C3V[7] C3V[6] C3V[5] C3V[4] C3V[3] C3V[2] C3V[1] C3V[0] 0X18 0X07 C4VOL C4V[7] C4V[6] C4V[5] C4V[4] C4V[3] C4V[2] C4V[1] C4V[0] 0X18 0X08 C5VOL C5V[7] C5V[6] C5V[5] C5V[4] C5V[3] C5V[2] C5V[1] C5V[0] 0X18 0X09 C6VOL C6V[7] C6V[6] C6V[5] C6V[4] C6V[3] C6V[2] C6V[1] C6V[0] 0X18 0X0A BTONE Reserved BTC[4] BTC[3] BTC[2] BTC[1] BTC[0] 0X10 0X0B TTONE Reserved TTC[4] TTC[3] TTC[2] TTC[1] TTC[0] 0X10 0X0C SCTL4 SRBP BTE DEQE NGE EQL PSL DSPB HPB 0X90 0X0D C1CFG Reserved C1PCBP C1DRCBP Reserved C1VBP 0X00 0X0E C2CFG Reserved C2PCBP C2DRCBP Reserved C2VBP 0X00 0X0F C3CFG Reserved C3DRCBP Reserved C3VBP 0X00 0X10 C4CFG Reserved C4DRCBP Reserved C4VBP 0X00 0X11 C5CFG Reserved C5DRCBP Reserved C5VBP 0X00 0X12 C6CFG Reserved C6DRCBP Reserved C6VBP 0X00 0X13 C7CFG Reserved C7DRCBP Reserved C7VBP 0X00 0X14 C8CFG Reserved C8DRCBP Reserved C8VBP 0X00 0X15 LAR1 LA1[3] LA1[2] LA1[1] LA1[0] LR1[3] LR1[2] LR1[1] LR1[0] 0X6A 0X16 LAR2 LA2[3] LA2[2] LA2[1] LA2[0] LR2[3] LR2[2] LR2[1] LR2[0] 0X6A 0X17 LAR3 LA3[3] LA3[2] LA3[1] LA3[0] LR3[3] LR3[2] LR3[1] LR3[0] 0X6A 0X18 LAR4 LA4[3] LA4[2] LA4[1] LA4[0] LR4[3] LR4[2] LR4[1] LR4[0] 0X6A 0X19 SCTL5 Reserved HP_SPK_ON DRCM DRC_LINK DB_CTRL_INV DB_EN MF_EN 0x10 0X1A SCTL6 Reserved PDB_REG SW_RSTB LVUV_FADE Reserved DIS_MCLK_DET Reserved 0X70 0X1B SCTL7 DRC_SEL[1] DRC_SEL[0] HOP[1] HOP[0] 32X3 FS8K TriBDRC_TYPE Reserved 0X00 0X1C SCTL8 Reserved Reserved POST_BOOST DIS_NG_FADE DRC_BOOST FADE_SPEED NG_GAIN[1] NG_GAIN[0] 0X00 0X1D CFADDR CFA[7] CFA[6] CFA[5] CFA[4] CFA[3] CFA[2] CFA[1] CFA[0] 0X00 0X1E A1CF1 C1B[23] C1B[22] C1B[21] C1B[20] C1B[19] C1B[18] C1B[17] C1B[16] 0X00 0X1F A1CF2 C1B[15] C1B[14] C1B[13] C1B[12] C1B[11] C1B[10] C1B[9] C1B[8] 0X00 0X20 A1CF3 C1B[7] C1B[6] C1B[5] C1B[4] C1B[3] C1B[2] C1B[1] C1B[0] 0X00

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 49/114 0X21 A2CF1 C2B[23] C2B[22] C2B[21] C2B[20] C2B[19] C2B[18] C2B[17] C2B[16] 0X00 0X22 A2CF2 C2B[15] C2B[14] C2B[13] C2B[12] C2B[11] C2B[10] C2B[9] C2B[8] 0X00 0X23 A2CF3 C2B[7] C2B[6] C2B[5] C2B[4] C2B[3] C2B[2] C2B[1] C2B[0] 0X00 0X24 B1CF1 C3B[23] C3B[22] C3B[21] C3B[20] C3B[19] C3B[18] C3B[17] C3B[16] 0X00 0X25 B1CF2 C3B[15] C3B[14] C3B[13] C3B[12] C3B[11] C3B[10] C3B[9] C3B[8] 0X00 0X26 B1CF3 C3B[7] C3B[6] C3B[5] C3B[4] C3B[3] C3B[2] C3B[1] C3B[0] 0X00 0X27 B2CF1 C4B[23] C4B[22] C4B[21] C4B[20] C4B[19] C4B[18] C4B[17] C4B[16] 0X00 0X28 B2CF2 C4B[15] C4B[14] C4B[13] C4B[12] C4B[11] C4B[10] C4B[9] C4B[8] 0X00 0X29 B2CF3 C4B[7] C4B[6] C4B[5] C4B[4] C4B[3] C4B[2] C4B[1] C4B[0] 0X00 0X2A A0CF1 C5B[23] C5B[22] C5B[21] C5B[20] C5B[19] C5B[18] C5B[17] C5B[16] 0X40 0X2B A0CF2 C5B[15] C5B[14] C5B[13] C5B[12] C5B[11] C5B[10] C5B[9] C5B[8] 0X00 0X2C A0CF3 C5B[7] C5B[6] C5B[5] C5B[4] C5B[3] C5B[2] C5B[1] C5B[0] 0X00 0X2D CFRW Reserved RBS R3 W3 RA R1 WA W1 0X00 0X2E PRS Prohibited 0X00 0X2F MBIST Prohibited 0X00 0X30 MSATEST Prohibited 0X00 0X31 Reserved Reserved 0X00 0X32 TM_CTRL Prohibited 0X00 0X33 TM2_CTRL Prohibited 0X00 0X34 VFT1 MV_FT[1] MV_FT[0] C1V_FT[1] C1V_FT[0] C2V_FT[1] C2V_FT[0] C3V_FT[1] C3V_FT[0] 0X00 0X35 VFT2 C4V_FT[1] C4V_FT[0] C5V_FT[1] C5V_FT[0] C6V_FT[1] C6V_FT[0] Reserved 0X00 0X36 HP_CTRL DAC_GAIN[1] DAC_GAIN[0] Reserved 0X00 0X37 ID DN[3] DN[2] DN[1] DN[0] VN[3] VN[2] VN[1] VN[0] 0XC8 0X38 R1ADDR Prohibited 0X00 0X39 R1D1 Prohibited 0X00 0X3A R1D2 Prohibited 0X00 0X3B R1D3 Prohibited 0X00 0X3C R1RW Prohibited 0X00 0X3D R3ADDR Prohibited 0X00 0X3E R3D1 Prohibited 0X00 0X3F R3D2 Prohibited 0X00 0X40 R3D3 Prohibited 0X00 0X41 R3RW Prohibited 0X00 0X42 LMC C1_CLR C2_CLR C3_CLR C4_CLR C5_CLR C6_CLR C7_CLR C8_CLR 0X00 0X43 PMC C1_CLR_RMS C2_CLR_RMS C3_CLR_RMS C4_CLR_RMS C5_CLR_RMS C6_CLR_RMS C7_CLR_RMS C8_CLR_RMS 0X00 0X44 TC1LM C1_LEVEL[23] C1_LEVEL[22] C1_LEVEL[21] C1_LEVEL[20] C1_LEVEL[19] C1_LEVEL[18] C1_LEVEL[17] C1_LEVEL[16] Read only

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 50/114 0X45 MC1LM C1_LEVEL[15] C1_LEVEL[14] C1_LEVEL[13] C1_LEVEL[12] C1_LEVEL[11] C1_LEVEL[10] C1_LEVEL[9] C1_LEVEL[8] read only 0X46 BC1LM C1_LEVEL[7] C1_LEVEL[6] C1_LEVEL[5] C1_LEVEL[4] C1_LEVEL[3] C1_LEVEL[2] C1_LEVEL[1] C1_LEVEL[0] read only 0X47 TC2LM C2_LEVEL[23] C2_LEVEL[22] C2_LEVEL[21] C2_LEVEL[20] C2_LEVEL[19] C2_LEVEL[18] C2_LEVEL[17] C2_LEVEL[16] read only 0X48 MC2LM C2_LEVEL[15] C2_LEVEL[14] C2_LEVEL[13] C2_LEVEL[12] C2_LEVEL[11] C2_LEVEL[10] C2_LEVEL[9] C2_LEVEL[8] read only 0X49 BC2LM C2_LEVEL[7] C2_LEVEL[6] C2_LEVEL[5] C2_LEVEL[4] C2_LEVEL[3] C2_LEVEL[2] C2_LEVEL[1] C2_LEVEL[0] read only 0X4A TC3LM C3_LEVEL[23] C3_LEVEL[22] C3_LEVEL[21] C3_LEVEL[20] C3_LEVEL[19] C3_LEVEL[18] C3_LEVEL[17] C3_LEVEL[16] read only 0X4B MC3LM C3_LEVEL[15] C3_LEVEL[14] C3_LEVEL[13] C3_LEVEL[12] C3_LEVEL[11] C3_LEVEL[10] C3_LEVEL[9] C3_LEVEL[8] read only 0X4C BC3LM C3_LEVEL[7] C3_LEVEL[6] C3_LEVEL[5] C3_LEVEL[4] C3_LEVEL[3] C3_LEVEL[2] C3_LEVEL[1] C3_LEVEL[0] read only 0X4D TC4LM C4_LEVEL[23] C4_LEVEL[22] C4_LEVEL[21] C4_LEVEL[20] C4_LEVEL[19] C4_LEVEL[18] C4_LEVEL[17] C4_LEVEL[16] read only 0X4E MC4LM C4_LEVEL[15] C4_LEVEL[14] C4_LEVEL[13] C4_LEVEL[12] C4_LEVEL[11] C4_LEVEL[10] C4_LEVEL[9] C4_LEVEL[8] read only 0X4F BC4LM C4_LEVEL[7] C4_LEVEL[6] C4_LEVEL[5] C4_LEVEL[4] C4_LEVEL[3] C4_LEVEL[2] C4_LEVEL[1] C4_LEVEL[0] read only 0X50 TC5LM C5_LEVEL[23] C5_LEVEL[22] C5_LEVEL[21] C5_LEVEL[20] C5_LEVEL[19] C5_LEVEL[18] C5_LEVEL[17] C5_LEVEL[16] read only 0X51 MC5LM C5_LEVEL[15] C5_LEVEL[14] C5_LEVEL[13] C5_LEVEL[12] C5_LEVEL[11] C5_LEVEL[10] C5_LEVEL[9] C5_LEVEL[8] read only 0X52 BC5LM C5_LEVEL[7] C5_LEVEL[6] C5_LEVEL[5] C5_LEVEL[4] C5_LEVEL[3] C5_LEVEL[2] C5_LEVEL[1] C5_LEVEL[0] read only 0X53 TC6LM C6_LEVEL[23] C6_LEVEL[22] C6_LEVEL[21] C6_LEVEL[20] C6_LEVEL[19] C6_LEVEL[18] C6_LEVEL[17] C6_LEVEL[16] read only 0X54 MC6LM C6_LEVEL[15] C6_LEVEL[14] C6_LEVEL[13] C6_LEVEL[12] C6_LEVEL[11] C6_LEVEL[10] C6_LEVEL[9] C6_LEVEL[8] read only 0X55 BC6LM C6_LEVEL[7] C6_LEVEL[6] C6_LEVEL[5] C6_LEVEL[4] C6_LEVEL[3] C6_LEVEL[2] C6_LEVEL[1] C6_LEVEL[0] read only 0X56 TC7LM C7_LEVEL[23] C7_LEVEL[22] C7_LEVEL[21] C7_LEVEL[20] C7_LEVEL[19] C7_LEVEL[18] C7_LEVEL[17] C7_LEVEL[16] read only 0X57 MC7LM C7_LEVEL[15] C7_LEVEL[14] C7_LEVEL[13] C7_LEVEL[12] C7_LEVEL[11] C7_LEVEL[10] C7_LEVEL[9] C7_LEVEL[8] read only 0X58 BC7LM C7_LEVEL[7] C7_LEVEL[6] C7_LEVEL[5] C7_LEVEL[4] C7_LEVEL[3] C7_LEVEL[2] C7_LEVEL[1] C7_LEVEL[0] read only 0X59 TC8LM C8_LEVEL[23] C8_LEVEL[22] C8_LEVEL[21] C8_LEVEL[20] C8_LEVEL[19] C8_LEVEL[18] C8_LEVEL[17] C8_LEVEL[16] read only 0X5A MC8LM C8_LEVEL[15] C8_LEVEL[14] C8_LEVEL[13] C8_LEVEL[12] C8_LEVEL[11] C8_LEVEL[10] C8_LEVEL[9] C8_LEVEL[8] read only 0X5B BC8LM C8_LEVEL[7] C8_LEVEL[6] C8_LEVEL[5] C8_LEVEL[4] C8_LEVEL[3] C8_LEVEL[2] C8_LEVEL[1] C8_LEVEL[0] read only 0X5C I2S_OUT Reserved 2S_DO_SEL[2] 2S_DO_SEL[1] 2S_DO_SEL[0] 0X05 0X5D CHK_STATE CHK_DRC_E CHK_DRC_AM CHK_DRC_R CHK_DRC_EN CHK_BEQ_E CHK_BEQ_AM CHK_BEQ_R CHK_BEQ_EN 0X00 0X5E DRC_CHK_TSV CHS_DRC_V[23] CHS_DRC_V[22] CHS_DRC_V[21] CHS_DRC_V[20] CHS_DRC_V[19] CHS_DRC_V[18] CHS_DRC_V[17] CHS_DRC_V[16] 0X00 0X5F DRC_CHK_MSV CHS_DRC_V[15] CHS_DRC_V[14] CHS_DRC_V[13] CHS_DRC_V[12] CHS_DRC_V[11] CHS_DRC_V[10] CHS_DRC_V[9] CHS_DRC_V[8] 0X00 0X60 DRC_CHK_BSV CHS_DRC_V[7] CHS_DRC_V[6] CHS_DRC_V[5] CHS_DRC_V[4] CHS_DRC_V[3] CHS_DRC_V[2] CHS_DRC_V[1] CHS_DRC_V[0] 0X00 0X61 BEQ_CHK_TSV CHS_BEQ_V[23] CHS_BEQ_V[22] CHS_BEQ_V[21] CHS_BEQ_V[20] CHS_BEQ_V[19] CHS_BEQ_V[18] CHS_BEQ_V[17] CHS_BEQ_V[16] 0X00 0X62 BEQ_CHK_MSV CHS_BEQ_V[15] CHS_BEQ_V[14] CHS_BEQ_V[13] CHS_BEQ_V[12] CHS_BEQ_V[11] CHS_BEQ_V[10] CHS_BEQ_V[9] CHS_BEQ_V[8] 0X00 0X63 BEQ_CHK_BSV CHS_BEQ_V[7] CHS_BEQ_V[6] CHS_BEQ_V[5] CHS_BEQ_V[4] CHS_BEQ_V[3] CHS_BEQ_V[2] CHS_BEQ_V[1] CHS_BEQ_V[0] 0X00 0X64 DRC_CHK_TRT CHS_DRC_R[23] CHS_DRC_R[22] CHS_DRC_R[21] CHS_DRC_R[20] CHS_DRC_R[19] CHS_DRC_R[18] CHS_DRC_R[17] CHS_DRC_R[16] read only 0X65 DRC_CHK_BRT CHS_DRC_R[15] CHS_DRC_R[14] CHS_DRC_R[13] CHS_DRC_R[12] CHS_DRC_R[11] CHS_DRC_R[10] CHS_DRC_R[9] CHS_DRC_R[8] read only 0X66 DRC_CHK_BRT CHS_DRC_R[7] CHS_DRC_R[6] CHS_DRC_R[5] CHS_DRC_R[4] CHS_DRC_R[3] CHS_DRC_R[2] CHS_DRC_R[1] CHS_DRC_R[0] read only 0X67 BEQ_CHK_TRT CHS_BEQ_R[23] CHS_BEQ_R[22] CHS_BEQ_R[21] CHS_BEQ_R[20] CHS_BEQ_R[19] CHS_BEQ_R[18] CHS_BEQ_R[17] CHS_BEQ_R[16] read only 0X68 BEQ_CHK_MRT CHS_BEQ_R[15] CHS_BEQ_R[14] CHS_BEQ_R[13] CHS_BEQ_R[12] CHS_BEQ_R[11] CHS_BEQ_R[10] CHS_BEQ_R[9] CHS_BEQ_R[8] read only

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 51/114 0X69 BEQ_CHK_BRT CHS_BEQ_R[7] CHS_BEQ_R[6] CHS_BEQ_R[5] CHS_BEQ_R[4] CHS_BEQ_R[3] CHS_BEQ_R[2] CHS_BEQ_R[1] CHS_BEQ_R[0] read only 0X6A~0X6F Reserved Reserved 0X00 0X70 Dither_CT Prohibited 0X78 0X71~0X73 Reserved Reserved 0X00 0X74 MKHB MK_HBYTE[7] MK_HBYTE[6] 0X75 MKLB MK_LBYTE[7] MK_LBYTE[6] 0X76 Reserved Reserved 0X00 0X77 HI_RES Prohibited 0X07 0X78 TMR Prohibited 0XFC 0X79 VOS Prohibited 0X58 0X7A Reserved Reserved 0X00 0X7B MBIST_UPT_E Prohibited 0X55 0X7C MBIST_UPT_E Prohibited 0X55 0X7D MBIST_UPT_E Prohibited 0X55 0X7E MBIST_UPT_O Prohibited 0X55 0X7F MBIST_UPT_O Prohibited 0X55 0X80 MBIST_UPT_O Prohibited 0X55 0X81 GPIO0_CTRL Reserved GPIO0_STATUS GPIO0_CTRL[3] GPIO0_CTRL[2] GPIO0_CTRL[1] GPIO0_CTRL[0] 0X00 0X82 GPIO1_CTRL Reserved 0X00 0X83 GPIO2_CTRL Reserved 0X00 0X84 ERR_REG A_LVDET_N A_OTP_N Reserved A_CKERR Reserved read only 0X85 ERR_RECORD A_LVDET_N_LATCH A_OTP_N__LATCH Reserved A_CKERR__LATCH Reserved read only 0X86 ERR_CLEAR A_LVDET_N_CLEAR A_OTP_N_CLEAR Reserved A_CKERR_CLEAR Reserved 0X00 0X87 MV_HP MV_HP[7] MV_HP[6] MV_HP[5] MV_HP[4] MV_HP[3] MV_HP[2] MV_HP[1] MV_HP[0] 0XFF 0X88 C1V_HP C1V_HP[7] C1V_HP[6] C1V_HP[5] C1V_HP[4] C1V_HP[3] C1V_HP[2] C1V_HP[1] C1V_HP[0] 0X18 0X89 C2V_HP C2V_HP[7] C2V_HP[6] C2V_HP[5] C2V_HP[4] C2V_HP[3] C2V_HP[2] C2V_HP[1] C2V_HP[0] 0X18 0X8A C3V_HP C3V_HP[7] C3V_HP[6] C3V_HP[5] C3V_HP[4] C3V_HP[3] C3V_HP[2] C3V_HP[1] C3V_HP[0] 0X18 0X8B C4V_HP C4V_HP[7] C4V_HP[6] C4V_HP[5] C4V_HP[4] C4V_HP[3] C4V_HP[2] C4V_HP[1] C4V_HP[0] 0X18 0X8C C5V_HP C5V_HP[7] C5V_HP[6] C5V_HP[5] C5V_HP[4] C5V_HP[3] C5V_HP[2] C5V_HP[1] C5V_HP[0] 0X18 0X8D C6V_HP C6V_HP[7] C6V_HP[6] C6V_HP[5] C6V_HP[4] C6V_HP[3] C6V_HP[2] C6V_HP[1] C6V_HP[0] 0X18 0X8E HPV_FT1 MV_FT_HP[1] MV_FT_HP[0] C1V_FT_HP[1] C1V_FT_HP[0] C2V_FT_HP[1] C2V_FT_HP[0] C3V_FT_HP[1] C3V_FT_HP[0] 0X00 0x8F HPV_FT2 C4V_FT_HP[1] C4V_FT_HP[0] C5V_FT_HP[1] C5V_FT_HP[0] C6V_FT_HP[1] C6V_FT_HP[0] Reserved 0X00 0X90 SMB_DB_L_AL SMB_LA1[3] SMB_LA1[2] SMB_LA1[1] SMB_LA1[0] SMB_LR1[3] SMB_LR1[2] SMB_LR1[1] SMB_LR1[0] 0X6A 0X91 SMB_DB_R_AL SMB_RA1[3] SMB_RA1[2] SMB_RA1[1] SMB_RA1[0] SMB_RR1[3] SMB_RR1[2] SMB_RR1[1] SMB_RR1[0] 0X6A 0X92 R2ADDR Prohibited 0X00 0X93 R2D1 Prohibited 0X00

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 52/114 0X94 R2D2 Prohibited 0X00 0X95 R2D3 Prohibited 0X00 0X96 R2RW Prohibited 0X00 0X97 R4ADDR Prohibited 0X00 0X98 R4D1 Prohibited 0X00 0X99 R4D2 Prohibited 0X00 0X9A R4D3 Prohibited 0X00 0X9B R4RW Prohibited 0X00

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 53/114 Detail Description for Register Note that the highlighted columns are default values of these tables. If there is no highlighted value, the default setting of this bit is determined by the external pin.  Address 0X00 : State control 1 AD85050 supports multiple serial data input formats including I2S, Left-alignment and Right-alignment. These formats are selected by u sers via bit7~bit5 of address 0 X00. The left/right channels can be exchanged to each other by programming to address 0/bit0, LREXC. BIT NAME DESCRIPTION VALUE FUNCTION B[7:5] IF[2:0] Input Format

000 I2S 16-24 bits

001 Left-alignment 16-24 bits

010 Right-alignment 16 bits

011 Right-alignment 18 bits

100 Right-alignment 20 bits

101 Right-alignment 24 bits

B[4:1] Reserved B[0] LREXC Left/Right (L/R) Channel exchanged

0 No exchanged

1 L/R exchanged

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 54/114  Address 0X01 : State control 2 AD85050 has a built-in PLL and supports multiple MCLK/Fs or BCLK/Fs ratios. If BCLK_SEL is high, the ratio is changed to BCLK/FS ratios. On the contrary, the ratio is changed to MCLK/FS ratios. AD85050 has 8K sample rate application via 0X1B, bit 2 to enable it. Detail setting is shown in the following table. BIT NAME DESCRIPTION VALUE FUNCTION B[7] BCLK_SEL MCLK-less (BCLK system)

0 Disable

1 Enable

B[6:4] FS[2:0] Sampling Frequency 000 32kHz 001 44.1kHz, 48kHz 010 64kHz 011 88.2kHz, 96kHz 100 128KHz 101 176kHz, 192kHz Multiple MCLK/FS in MCLK system or BCLK/FS in BCLK system ratio setting table BIT NAME DESCRIPTION VALUE B[6:5]=00 B[6:5]=01 B[6:5]=1x B[3:0] PMF[3:0] MCLK/Fs or BCLK/Fs setup 0000 1024x 512x 256x 0001 Reset Default (64x) Reset Default (64x) Reset Default (64x) 0010 128x 128x 128x 0011 192x 192x 192x 0100 256x 256x 256x 0101 384x 384x Reserved 0110 512x 512x 0111 576x Reserved 1000 768x 1001 1024x

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 55/114 Multiple MCLK/FS ratio setting table of 8K application BIT NAME DESCRIPTION VALUE 0X1B, B[2]=1 B[3:0] PMF[3:0] MCLK/Fs Setup 0000 4096x 0001 Reset Default (256x) 0010 512x 0011 768x 0100 1024x 0101 1536x 0110 2048x 0111 2304x 1000 3072x 1001 4096x

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 56/114  Address 0X02 : State control 3 AD85050 has mute function including master mute and channel mute. In one band DRC, master, channel 1, and channel 2 mute will be active. When master mute is enabled, all 2 processing channels are muted. User can mute these 2 channels individually by channel mute. When the mute function is enabled or disabled, the fade-out or fade-in process will be initiated. In three bands DRC, master, channel 1 to channel 6 mute will be active. When master mute is enabled, all 6 processing channels are muted. User can mute these 6 channels individually by channel mute. When the mute function is enabled or disabled, the fade-out or fade-in process will be initiated. BIT NAME DESCRIPTION VALUE FUNCTION B[7] Reserved B[6] MMUTE Master Mute

0 All channel not muted

1 All channel muted

B[5] CM1 Channel 1 Mute

0 Ch1 not muted

1 Only Ch1 muted

B[4] CM2 Channel 2 Mute

0 Ch2 not muted

1 Only Ch2 muted

B[3] CM3 Channel 3 Mute

0 Ch3 not muted

1 Only Ch3 muted

B[2] CM4 Channel 4 Mute

0 Ch4 not muted

1 Only Ch4 muted

B[1] CM5 Channel 5 Mute

0 Ch5 not muted

1 Only Ch5 muted

B[0] CM6 Channel 6 Mute

0 Ch6 not muted

1 Only Ch6 muted

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 57/114  Address 0X03 : Master volume control AD85050 supports both master-volume (Address 0X03) and channel-volume control (Address 0X04, 0X05, 0X06, 0X07, 0X08, 0X09 ) modes. Both volume control settings range from +12dB ~ -103dB and 0.5dB per step. Note that the master volume control is added to the individual channel volume control as the total volume control. For example, if the master volume level is set at, Level A (in dB unit) and the channel volume level is set at Level B (in dB unit), the total volume control setting is equal to Level A plus with Level B. -103dB ≦ Total volume ( Level A + Level B ) ≦ +24dB. BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] MV[7:0] Master Volume 00000000 +12.0dB 00000001 +11.5dB 00000010 +11.0dB ︰ ︰ 00010111 +0.5dB 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB  Address 0X04 : Channel 1 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C1V[7:0] Channel1 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 58/114  Address 0X05 : Channel 2 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C2V[7:0] Channel2 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB  Address 0X06 : Channel 3 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C3V[7:0] Channel3 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 59/114  Address 0X07 : Channel 4 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C4V[7:0] Channel 4 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB  Address 0X08 : Channel 5 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C5V[7:0] Channel 5 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 60/114  Address 0X09 : Channel 6 volume BIT NAME DESCRIPTION VALUE FUNCTION BIT[7:0] C6V[7:0] Channel 6 Volume 00000000 +12.0dB 00000001 +11.5dB ︰ ︰ 00010100 +2dB ︰ ︰ 00011000 0.0dB 00011001 -0.5dB ︰ ︰ 11100110 -103.0dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 61/114  Address 0X0A/0X0B : Bass/Treble tone boost and cut EQ11 and EQ12 can be programmed as bass/treble tone boost and cut. When, register with address -0X0C, bit-6, BTE is set to h igh, the EQ11 and EQ12 will perform as bass and treble respectively. The -3dB corner frequency of bass is 360Hz, and treble is 7kHz. The gain range for both filters is +12db ~ -12dB with 1dB per step. BIT NAME DESCRIPTION VALUE FUNCTION B[7:5] Reserved B[4:0] BTC[4:0] TTC[4:0] The gain setting of boost and cut 00000 +12dB … … 00100 +12dB 00101 +11dB 00110 +10dB … … 01110 +2dB 01111 +1dB 10000 0dB 10001 -1dB 10010 -2dB … … 11010 -10dB 11011 -11dB 11100 -12dB … … 11111 -12dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 62/114  Address 0X0C : State control 4 The AD85050 provides several DSP setting as following, BIT NAME DESCRIPTION VALUE FUNCTION B[7] SRBP Surround bypass

0 Surround enable

1 Surround bypass

B[6] BTE Bass/Treble Selection bypass

0 Bass/Treble Disable

1 Bass/Treble Enable

B[5] DEQE Dynamic EQ enable

0 DEQ Disable

1 DEQ enable

B[4] NGE Noise gate enable

0 Noise gate disable

1 Noise gate enable

B[3] EQL EQ Link

0 Each channel uses individual EQ

1 Channel-2 uses channel-1 EQ

B[2] PSL Post-scale link Each channel uses individual post-scale

1 Use channel-1 post-scale

B[1] DSPB EQ bypass

0 EQ enable

1 EQ bypass

B[0] HPB DC blocking HPF bypass

0 HPF dc enable

1 HPF dc bypass

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 63/114  Address 0X0D, 0X0E ,0X0F,0X10,0X11,0X12, 0X13,0X14 : Channel configuration registers AD85050 can configure each channel to enable or bypass DRC and channel volume and select the limiter set. Address 0X0D and 0X0E; where x=1 or 2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:4] Reserved B[3] CxPCBP Channel x Power Clipping bypass

0 Channel x PC enable

1 Channel x PC bypass

B[2] CxDRCBP Channel x DRC bypass

0 Channel x DRC enable

1 Channel x DRC bypass

B[1] Reserved B[0] CxVBP Channel x Volume bypass

0 Channel x’s master volume operation

1 Channel x’s master volume bypass

Address 0X0F, 0X10, 0X11, and 0X12; where x=3,4,5,6 BIT NAME DESCRIPTION VALUE FUNCTION B[7:3] Reserved B[2] CxDRCBP Channel x DRC bypass B[1] Reserved B[0] CxVBP Channel x Volume bypass

0 Channel x volume operation

1 Channel x volume bypass

Address 0X13, and 0X14; where x=7 or 8 BIT NAME DESCRIPTION VALUE FUNCTION B[7:3] Reserved B[2] CxDRCBP Channel x DRC bypass B[1:0] Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 64/114  Address 0X15, 0X16, 0X17, 0X18 : DRC limiter attack/release rate The AD85050 has 4 independent DRC set, each DRC has its own attack/release rate. Address 0X15, 0X16, 0X17, and 0X18; where x=1, 2, 3, 4 BIT NAME DESCRIPTION VALUE FUNCTION B[7:5] Lax[3:0] DRC attack rate 0000 3 dB/ms 0001 2.667 dB/ms 0010 2.182 dB/ms 0011 1.846 dB/ms 0100 1.333 dB/ms 0101 0.889 dB/ms 0110 0.4528 dB/ms 0111 0.2264 dB/ms 1000 0.15 dB/ms 1001 0.1121 dB/ms 1010 0.0902 dB/ms 1011 0.0752 dB/ms 1100 0.0645 dB/ms 1101 0.0563 dB/ms 1110 0.0501 dB/ms 1111 0.0451 dB/ms B[3:0] LRx[3:0] DRC release rate 0000 0.5106 dB/ms 0001 0.1371 dB/ms 0010 0.0743 dB/ms 0011 0.0499 dB/ms 0100 0.0360 dB/ms 0101 0.0299 dB/ms 0110 0.0264 dB/ms 0111 0.0208 dB/ms 1000 0.0198 dB/ms 1001 0.0172 dB/ms 1010 0.0147 dB/ms 1011 0.0137 dB/ms 1100 0.0134 dB/ms 1101 0.0117 dB/ms 1110 0.0112 dB/ms 1111 0.0104 dB/ms

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 65/114  Address 0X19 : State control 5 DRC mode: The selection of DRC calculation is peak or RMS. DRC link: When DRC_LINK=1, left channel and right channel use the same coefficient and threshold. HP and SPK on : Turn on headphone and speaker at the sa me time. When HP_SPK_ON=1, SDZ pin is always high, connect the SDZ pin directly to AMP_SDB pin. The AMP output will be turned on. When HP_SPK_ON=0, SDZ pin is controlled by HP_SPK pin. Dynamic Bass: A processing block that allows for optimizing the bass response of the system by setting DB_EN = 1: With DB_CTRL_INV=0, if the energy of lower frequency is bigger than Dynamic bass DRC attack threshold, the missing fundamental function will be enable, while energy of lower frequency is smaller than Dynamic bass DRC release threshold, true bass will be enable. On the other side, with DB_CTRL_INV=1, if the energy of lower frequency is bigger than Dynamic bass DRC attack threshold, true bass will be enable, while energy of lower frequency is smaller than Dynamic b ass DRC release threshold, the missing fundamental will be enable. Note: it needs to set BTE=1 and MF_EN=1 while enable dynamic bass DB_EN = 0: True bass and missing fundamental will be controlled by BTE and MF_EN individually. Missing fundamental: This method is a well-known psychoacoustic effect invoking a perception of the bass frequencies even though the fundamental of those frequencies has been filtered out. A missing fundamental is used as a function of regenerating a bass that is filtered out by pre-filter. BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] Reserved B[5] HP_SPK_ON HP and SPK turn on simultaneously B[4] DRCM DRC Mode

0 PEAK mode

1 RMS mode

B[3] DRC_LINK DRC link B[2] DB_CTRL_INV DB CTRL inversion

0 Normal

1 Invert

B[1] DB_EN Dynamic Bass enable

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 66/114 B[0] MF_EN Missing fundamental enable Address 0X1A : State control 6 Power down register: When PDB_REG=0, power down is happened (SDZ pin is pulled low). Software reset: When SW_RSTB=1, software reset is happened. Lower under voltage fade: If LVUV_FADE=1, system will fade out when LVUV occur. Disable MCLK detect circuit: enable/disable MCLK detect circuit. PWM modulation: PWM select qua-ternary or ternary. BIT NAME DESCRIPTION VALUE FUNCTION B[7] Reserved B[6] PDB_REG Power down register

0 Power down

1 Normal operation

B[5] SW_RSTB Software reset

0 Reset

B[4] LVUV_FADE Low Under Voltage Fade

0 No Fade

1 Fade

B[3] Reserved B[2] DIS_MCLK_DET Disable MCLK detect circuit

0 Enable MCLK detect circuit

1 Disable MCLK detect circuit

B[1:0] Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 67/114  Address 0X1B : State control 7 AD85050 can support one band, two band, and three band DRC selection via bit7~bit6. AD85050 can support x3 oversampling. AD85050 can support application of 8KHZ (human speech voice). AD85050 can support two types in three bands DRC. Type 1: Type 2: BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] DRC_SEL DRC mode selection 00 1 Band DRC 01 2 Bands DRC 1x 3 Bands DRC B[3] 32X3 X3 oversampling

0 X2 oversampling

1 X3 oversampling

B[2] FS8K FS8K B[1] TriBDRC_TYPE

3 Band DRC type

0 Type 1

1 Type 2

B[0] Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 68/114  Address 0X1C: State control 8 AD85050 provides invert left channel output by bit 7. AD85050 provides invert right channel output by bit 6. AD85050 provides post boost +48dB support via bit 5. AD85050, user can select fade out or not for noise gate via bit 4. AD85050 provides DRC boost +36dB support via bit 3. AD85050 provides 2 kind of fade in/out speed via bit 2. One is 1.25ms from mute to 0dB. The other one is 10ms from mute to 0dB. AD85050 provides noise gate function if receiving 2048 signal sample points smaller than noise gate attack level. User can change noise gate gain via bit1~ bit0. When noise gate function occurs, input signal will multiply noise gate gain (x1/8, x1/4 x1/2, Mute). BIT NAME DESCRIPTION VALUE FUNCTION B[7] Reserved B[6] Reserved B[5] POST_BOOST POST boost +48dB 0 0dB 1 +48dB B[4] DIS_NG_FADE Disable noise gate fade

0 Fade

1 No fade

B[3] DRC_BOOST DRC boost +36dB 0 0dB 1 +36dB B[2] FADE_SPEED Fade in/out speed selection 0 1.25ms 1 10ms B[1:0] NG_GAIN[1:0] Noise gate gain 00 x1/8 01 x1/4 10 x1/2

11 Mute

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 69/114  Address 0X1D ~0X2D : User-defined coefficients registers An on-chip RAM in AD85050 stores user-defined EQ, mixing, pre-scale, post-scale coefficients…etc. The content of this coe fficient RAM is indirectly accessed via coefficient registers , which consist of one base address register (address 0X1D), five sets of registers (address 0X1E to 0X2C) of three consecutive 8-bit entries for each 24-bit coefficient, and one control register (address 0X2D) to control access of the coefficients in the RAM.. Address 0X1D BIT NAME DESCRIPTION VALUE FUNCTION B[7] Reserved B[6:0] CFA[6:0] Coefficient RAM base address 0000000 Address 0X1E, A1cf1 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1B[23:16] Top 8-bits of coefficients A1 Address 0X1F, A1cf2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1B[15:8] Middle 8-bits of coefficients A1 Address 0X20, A1cf3 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1B[7:0] Bottom 8-bits of coefficients A1 Address 0X21, A2cf1 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2B[23:16] Top 8-bits of coefficients A2 Address 0X22, A2cf2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2B[15:8] Middle 8-bits of coefficients A2

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 70/114 Address 0X23, A2cf3 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2B[7:0] Bottom 8-bits of coefficients A2 Address 0X24, B1cf1 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3B[23:16] Top 8-bits of coefficients B1 Address 0X25, B1cf2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3B[15:8] Middle 8-bits of coefficients B1 Address 0X26, B1cf3 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3B[7:0] Bottom 8-bits of coefficients B1 Address 0X27, B2cf1 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4B[23:16] Top 8-bits of coefficients B2 Address 0X28, B2cf2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4B[15:8] Middle 8-bits of coefficients B2 Address 0X29, B2cf3 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4B[7:0] Bottom 8-bits of coefficients B2

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 71/114 Address 0X2A, A0cf1 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5B[23:16] Top 8-bits of coefficients A0 Address 0X2B, A0cf2 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5B[15:8] Middle 8-bits of coefficients A0 Address 0X2C, A0cf3 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5B[7:0] Bottom 8-bits of coefficients A0 Address 0X2D, CfRW BIT NAME DESCRIPTION VALUE FUNCTION B[7] Reserved B[6] RBS RAM bank selection

0 Select RAM bank 0

1 Select RAM bank 1

B[5] R3 Enable of reading three coefficients from RAM

0 Read complete

1 Read enable

B[4] W3 Enable of writing three coefficients to RAM

0 Write complete

1 Write enable

B[3] RA Enable of reading a set of coefficients from RAM B[2] R1 Enable of reading a single coefficients from RAM B[1] WA Enable of writing a set of coefficients to RAM B[0] W1 Enable of writing a single coefficient to RAM

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 72/114  Address 0X34/0X35 : Volume fine tune AD85050 supports both master-volume fine tune and channel-volume control fine tune modes. Both volume control settings range from 0dB ~ -0.375dB and 0.125dB per step. Note that the master volume fine tune is added to the individual channel volume fine tune as the total volume fine tune. Address 0X34 BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] MV_FT Master Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[5:4] C1V_FT Channel 1 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[3:2] C2V_FT Channel 2 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[1:0] C3V_FT Channel 3 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB Address 0X35 BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] C4V_FT Channel 4 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[5:4] C5V_FT Channel 5 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[3:2] C6V_FT Channel 6 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[1:0] Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 73/114  Address 0X36 : DAC gain control AD85050 supports DAC analog gain control by bit [7:6]. BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] DAC_GAIN DAC gain control 00 1.5dB 01 1.0dB 00 -3.5dB 11 -4dB B[5:0] Reserved Reserved  Address 0X42 : level meter clear AD85050 has 8 set of level meters which hold the maximum absolute value. Each level meter has its own level meter clear. BIT NAME DESCRIPTION VALUE FUNCTION B[7] C1_CLR Clear CH1 level meter

0 No clear

1 Clear

B[6] C2_CLR Clear CH2 level meter B[5] C3_CLR Clear CH3 level meter B[4] C4_CLR Clear CH4 level meter B[3] C5_CLR Clear CH5 level meter B[2] C6_CLR Clear CH6 level meter B[1] C7_CLR Clear CH7 level meter B[0] C8_CLR Clear CH8 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 74/114  Address 0X43 : Power meter clear AD85050 has 8 set of level meters which continue update RMS value. Each level meter has its own power meter clear. BIT NAME DESCRIPTION VALUE FUNCTION B[7] C1_CLR_RMS Clear CH1 power meter B[6] C2_CLR_RMS Clear CH2 power meter B[5] C3_CLR_RMS Clear CH3 power meter B[4] C4_CLR_RMS Clear CH4 power meter B[3] C5_CLR_RMS Clear CH5 level meter B[2] C6_CLR_RMS Clear CH6 level meter B[1] C7_CLR_RMS Clear CH7 level meter B[0] C8_CLR_RMS Clear CH8 level meter  Address 0X44 : Top 8 bit of C1 level meter In one band DRC, channel-1 level meter is used for L channel. In two/three bands DRC, channel-1 level meter is high frequency path of L channel. The addresses to show channel-1 level meter are 0X44, 0X45, and 0X46. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1_LEVEL_T Top 8 bits of channel 1 level meter

0000000 Reset value

 Address 0X45 : Middle 8 bit of C1 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1_LEVEL_M Middle 8 bits of channel 1 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 75/114  Address 0X46 : Bottom 8 bit of C1 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C1_LEVEL_B Bottom 8 bits of channel 1 level meter  Address 0X47 : Top 8 bit of C2 level meter In one band DRC, channel-2 level meter is used for R channel. In two/three bands DRC, channel-2 level meter is high frequency path of R channel. The addresses to show channel-2 level meter are 0X47, 0X48, and 0X49. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2_LEVEL_T Top 8 bits of channel 2 level meter  Address 0X48 : Middle 8 bit of C2 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2_LEVEL_M Middle 8 bits of channel 2 level meter  Address 0X49 : Bottom 8 bit of C2 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C2_LEVEL_B Bottom 8 bits of channel 2 level meter  Address 0X4A : Top 8 bit of C3 level meter In one/two bands DRC, channel-3 level meter is no use. In three bands DRC, channel-3 level meter is low frequency path of L channel. The addresses to show channel-3 level meter are 0X4A, 0X4B, and 0X4C. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3_LEVEL_T Top 8 bits of channel 3 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 76/114  Address 0X4B : Middle 8 bit of C3 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3_LEVEL_M Middle 8 bits of channel 3 level meter  Address 0X4C : Bottom 8 bit of C3 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C3_LEVEL_B Bottom 8 bits of channel 3 level meter  Address 0X4D : Top 8 bit of C4 level meter In one/two bands DRC, channel-4 level meter is no use. In three bands DRC, channel-4 level meter is low frequency path of R channel. The addresses to show channel-4 level meter are 0X4D, 0X4E, and 0X4F. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4_LEVEL_T Top 8 bits of channel 4 level meter  Address 0X4E : Middle 8 bit of C4 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4_LEVEL_M Middle 8 bits of channel 4 level meter  Address 0X4F : Bottom 8 bit of C4 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C4_LEVEL_B Bottom 8 bits of channel 4 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 77/114  Address 0X50 : Top 8 bit of C5 level meter In one band DRC, channel-5 level meter is no use. In two/three bands DRC, channel-5 level meter is band pass frequency path of L channel. The addresses to show channel-5 level meter are 0X50, 0X51, and 0X52. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5_LEVEL_T Top 8 bits of channel 5 level meter  Address 0X51 : Middle 8 bit of C5 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5_LEVEL_M Middle 8 bits of channel 5 level meter  Address 0X52 : Bottom 8 bit of C5 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C5_LEVEL_B Bottom 8 bits of channel 5 level meter  Address 0X53 : Top 8 bit of C6 level meter In one band DRC, channel-6 level meter is no use. In two/three bands DRC, channel-6 level meter is band pass frequency path of R channel. The addresses to show channel-6 level meter are 0X53, 0X54, and 0X55. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C6_LEVEL_T Top 8 bits of channel 6 level meter  Address 0X54 : Middle 8 bit of C6 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C6_LEVEL_M Middle 8 bits of channel 6 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 78/114  Address 0X55 : Bottom 8 bit of C6 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C6_LEVEL_B Bottom 8 bits of channel 6 level meter  Address 0X56 : Top 8 bit of C7 level meter In one band DRC, channel-7 level meter is no use. In two/three bands DRC, channel-7 level meter is summation path of L channel. The addresses to show channel-7 level meter are 0X56, 0X57, and 0X58. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C7_LEVEL_T Top 8 bits of channel 7 level meter  Address 0X57 : Middle 8 bit of C7 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C7_LEVEL_M Middle 8 bits of channel 7 level meter  Address 0X58 : Bottom 8 bit of C7 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C7_LEVEL_B Bottom 8 bits of channel 7 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 79/114  Address 0X59 : Top 8 bit of C8 level meter In one band DRC, channel-8 level meter is no use. In two/three bands DRC, channel-8 level meter is summation path of R channel. The addresses to show channel-8 level meter are 0X59, 0X5A, and 0X5B. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C8_LEVEL_T Top 8 bits of channel 8 level meter  Address 0X5A : Middle 8 bit of C8 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C8_LEVEL_M Middle 8 bits of channel 8 level meter  Address 0X5B : Bottom 8 bit of C8 level meter BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] C8_LEVEL_B Bottom 8 bits of channel 8 level meter

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 80/114  Address 0X5C : I2S output selection AD85050 provide I2S output function via GPIO pins and the output point can be selected via bit 2~bit 0. BIT NAME DESCRIPTION VALUE FUNCTION B[7:3] Reserved B[2:0] I2S_DO_SEL I2S DATA OUTPUT selection Others Reserved

110 Reserved

101 Point6 : DC blocking HPF output

100 Point5 : volume output

011 Point4 : EQ12 output

010 Point3 : Mixer output

001 Point2 : pre-scale output

000 Ponit1 : DSP input

L R PreScal PreScal EQ1 EQ1 EQ2 EQ2 EQ17 EQ17 LCH RCH Volume1 Volume2 DRC 1 DRC 3 M11 M12 M21 M22 LCH RCH Surrround Surrround ASRC EQ18 EQ18 Power Clip32 LPF Noise shaper PostScal boost Power Clip32 LPF Noise shaper PostScal boost MF MF Point 1 Point 2 Point 3 Point 4 EQ11 EQ11 EQ12 EQ12 EQ13 EQ13 EQ14 EQ14 EQ15 EQ15 EQ16 EQ16 Point 5 Point 6

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 81/114  Address 0x5D:CHS_stat AD85050 provides check sum status for user via bit 5 / bits 1(read only). And you can enable DRC/BEQ check sum function via bit 4 / bit 0. BIT NAME DESCRIPTION VALUE FUNCTION B[7] CHK_DRC_E ERROR link DRC_CHK

0 No link

1 ERROR link

B[6] CHK_DRC_AM Auto Mute DRC_CHK B[5] CHK_DRC_R Result DRC_CHK

0 No error

1 Error occurred

B[4] CHK_DRC_EN Enable DRC_CHK B[3] CHK_BEQ_E PROTN link BEQ_CHK B[2] CHK_BEQ_AM Auto Mute BEQ_CHK B[1] CHK_BEQ_R Result BEQ_CHK B[0] CHK_BEQ_EN Enable BEQ_CHK

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 82/114 Set up DRC check value  Address 0X5E : Top 8 bits of DRC_CHK set value. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_V[23:16] Top 8-bits of DRC_CHK set value

0000000 Initial value

 Address0x5F : Middle 8 bits of DRC_CHK set value BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_V[15:8] Middle 8-bits of DRC_CHK set value  Address0x60 : Bottom 8 bits of DRC_CHK set val ue BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_V[7:0] Bottom 8-bits of DRC_CHK set value  Address0x61 : Top 8 bits of BEQ_CHK set value BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_V[23:16] Top 8-bits of BEQ_CHK set value  Address0x62 : Middle 8 bits of BEQ_CHK set value BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_V[15:8] Middle 8-bits of BEQ_CHK set value  Address0x63 : Bottom 8 bits of BEQ_CHK set value BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_V[7:0] Bottom 8-bits of BEQ_CHK set value

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 83/114 DRC check result  Address0x64 : Top 8 bits of DRC_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_R[23:16] Top 8-bits of DRC_CHK result x Result  Address0x65 : Middle 8 bits of DRC_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_R15:8] Middle 8-bits of DRC_CHK result x Result  Address0x66: Bottom 8 bits of DRC_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_DRC_R[7:0] Bottom 8-bits of DRC_CHK result x Result BEQ check result  Address0x67 : Top 8 bits of BEQ_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_R[23:16] Top 8-bits of BEQ_CHK result x Result  Address0x68 : Middle 8 bits of BEQ_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_R[15:8] Middle 8-bits of BEQ_CHK result x Result  Address0x69 : Bottom 8 bits of BEQ_CHK result BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CHS_BEQ_R[7:0] Bottom 8-bits of BEQ_CHK result x Result

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 84/114  Address 0x81: GPIO0 control GPIO0 of AD85050 is input or output via bit 4. Select output types of GPIO0 by setting bit 3-0. BIT NAME DESCRIPTION VALUE FUNCTION B[7:5] Reserved Reserved B[4] GPIO0_STATUS GPIO0_status GPIO0 act as input (initial MCLK/Fs setting)

1 GPIO0 act as output

B[3:0] GPIO0_CTRL GPIO0 Control

0000 Clock error output

0001 Under voltage output

0010 OTP output

0011 PLL clock output

0100 charge pump clock output

0101 Serial audio interface data output

0110 Reserved

0111 Checksum error output

….. Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 85/114 Address0x84 : Error register BIT NAME DESCRIPTION VALUE FUNCTION B[7] A_LVDET_N LVDET register

0 LVDET ever occur

1 Normal

B[6] A_OTP_N OTP register

0 OTP ever occur

B[5:3] Reserved Reserved B[2] A_CKEER CKEER register

0 CKEER ever occur

B[1:0] Reserved Reserved  Address0x85 : Error latch register BIT NAME DESCRIPTION VALUE FUNCTION B[7] A_LVDET_N_LATCH LVDET latch register

0 LVDET latched

B[6] A_OTP_N_LATCH OTP latch register

0 OTP latched

B[5:3] Reserved Reserved B[2] A_CKEER_LATCH CKEER latch register

0 CKEER latched

B[1:0] Reserved Reserved  Address0x86 : Error clear register BIT NAME DESCRIPTION VALUE FUNCTION B[7] A_LVDET_N LVDET register B[6] A_OTP_N_CLEAR OTP latch clear register B[5:3] Reserved Reserved B[2] A_CKEER_CLEAR CLOCK ERROR latch clear register B[1:0] Reserved Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 86/114  Address 0X87 : HP Master volume AD85050 can tune head phone master volume by setting bit7-0. BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] MV_HP[7:0] HP Master Volume 00000000 +12dB 00000001 +11.5dB 00000010 +11dB ︰ ︰ 00010111 0.5dB 00011000 0dB 00011001 -0.5dB ︰ ︰ 11100110 -103dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 87/114  Address 0X88, 0X89, 0X8A, 0X8B, 0X8C, 0X8D AD85050 can tune head phone channel1-6 volume by setting bit7-0. Address 0X88 ~ 0X8D; where x=1, 2 , 3 , 4, 5 , 6 BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] CxV_HP[7:0] HP Channel Volume 00000000 +12dB 00000001 +11.5dB ︰ ︰ 00010100 2dB ︰ ︰ 00011000 0dB 00011001 -0.5dB ︰ ︰ 11100110 -103dB 11100111 -∞dB ︰ ︰ 11111111 -∞dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 88/114  Address 0X8E : HP Volume fine tune for master volume and Channel 1~3 AD85050 can fine tune head phone master volume by setting bit7-6. AD85050 can fine tune head phone channel1 volume by setting bit5-4. AD85050 can fine tune head phone channel2 volume by setting bit3-2. AD85050 can fine tune head phone channel3 volume by setting bit1-0. BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] MV_FT_HP HP Master Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[5:4] C1V_FT_HP HP Channel 1 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[3:2] C2V_FT_HP HP Channel 2 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[1:0] C3V_FT_HP HP Channel 3 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 89/114  Address 0X8F : HP Volume fine tune for channel 4~6 AD85050 can fine tune head phone channel4 volume by setting bit7-6. AD85050 can fine tune head phone channel5 volume by setting bit5-4. AD85050 can fine tune head phone channel6 volume by setting bit3-2. BIT NAME DESCRIPTION VALUE FUNCTION B[7:6] C4V_FT_HP HP Channel 4 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[5:4] C5V_FT_HP HP Channel 5 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[3:2] C6V_FT_HP HP Channel 6 Volume Fine Tune 00 0dB 01 -0.125dB 10 -0.25dB 11 -0.375dB B[1:0] Reserved Reserved

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 90/114  Address 0X90 : Lch limiter attack/release time for DB The AD85050 has left channel DB (dynamic bass) set, this DB has its own attack/release time. BIT NAME DESCRIPTION VALUE FUNCTION B[7:4] LA1[3:0] DB attack time 0000 41.67us 0001 52.1us 0010 62.5us 0011 72.92us 0100 93.75us 0101 145.8us 0110 281.25us 0111 562.5us 1000 833.3us 1001 1.114ms 1010 1.385ms 1011 1.667ms 1100 1.937ms 1101 2.218ms 1110 2.5ms 1111 2.65ms B[3:0] LR1[3:0] DB release time 0000 250us 0001 916.6us 0010 1.687ms 0011 2.51ms 0100 3.479ms 0101 4.187ms 0110 4.739ms 0111 6.01ms 1000 6.312ms 1001 7.27ms 1010 8.51ms 1011 9.12ms 1100 9.33ms 1101 10.68ms 1110 11.36ms

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 91/114  Address 0X91 : Rch limiter attack/release time for DB The AD85050 has right channel DB (dynamic bass) set, this DB has its own attack/release time. BIT NAME DESCRIPTION VALUE FUNCTION B[7:4] RA1[3:0] DB attack time 0000 41.67us 0001 52.1us 0010 62.5us 0011 72.92us 0100 93.75us 0101 145.8us 0110 281.25us 0111 562.5us 1000 833.3us 1001 1.114ms 1010 1.385ms 1011 1.667ms 1100 1.937ms 1101 2.218ms 1110 2.5ms 1111 2.65ms B[3:0] RR1[3:0] DB release time 0000 250us 0001 916.6us 0010 1.687ms 0011 2.51ms 0100 3.479ms 0101 4.187ms 0110 4.739ms 0111 6.01ms 1000 6.312ms 1001 7.27ms 1010 8.51ms 1011 9.12ms 1100 9.33ms 1101 10.68ms 1110 11.36ms

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 92/114  RAM access The procedure to read/write coefficient(s) from/to RAM is as followings: Read a single coefficient from RAM: 1. Write 7-bis of address to I2C address-0X1D 2. Write 1 to R1 bit and write 1/0 to RBS in address-0X2D 3. Read top 8-bits of coefficient in I2C address-0X1E 4. Read middle 8-bits of coefficient in I2C address-0X1F 5. Read bottom 8-bits of coefficient in I2C address-0X20 Read three coefficients from RAM: 1. Write 7-bis of address to I2C address-0X1D 2. Write 1 to R3 bit and write 1/0 to RBS in address-0X2D 3. Read top 8-bits of coefficient in I2C address-0X1E 4. Read middle 8-bits of coefficient in I2C address-0X1F 5. Read bottom 8-bits of coefficient A1 in I2C address-0X20 6. Read top 8-bits of coefficient A2 in I2C address-0X21 7. Read middle 8-bits of coefficient A2 in I2C address-0X22 8. Read bottom 8-bits of coefficient A2 in I2C address-0X23 9. Read top 8-bits of coefficient B1 in I2C address-0X24 10. Read middle 8-bits of coefficient B1 in I2C address-0X25 11. Read bottom 8-bits of coefficient B1 in I2C address-0X26 Read a set of coefficients from RAM: 1. Write 7-bits of address to I2C address-0X1D 2. Write 1 to RA bit and write 1/0 to RBS in address-0X2D 3. Read top 8-bits of coefficient A1 in I2C address-0X1E 4. Read middle 8-bits of coefficient A1in I2C address-0X1F 5. Read bottom 8-bits of coefficient A1 in I2C address-0X20 6. Read top 8-bits of coefficient A2 in I2C address-0X21 7. Read middle 8-bits of coefficient A2 in I2C address-0X22 8. Read bottom 8-bits of coefficient A2 in I2C address-0X23 9. Read top 8-bits of coefficient B1 in I2C address-0X24 10. Read middle 8-bits of coefficient B1 in I2C address-0X25 11. Read bottom 8-bits of coefficient B1 in I2C address-0X26 12. Read top 8-bits of coefficient B2 in I2C address-0X27 13. Read middle 8-bits of coefficient B2 in I2C address-0X28 14. Read bottom 8-bits of coefficient B2 in I2C address-0X29 15. Read top 8-bits of coefficient A0 in I2C address-0X2A 16. Read middle 8-bits of coefficient A0 in I2C address-0X2B

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 93/114 17. Read bottom 8-bits of coefficient A0 in I2C address-0X2C Write a single coefficient to RAM: 1. Write 7-bis of address to I2C address-0X1D 2. Write top 8-bits of coefficient in I2C address-0X1E 3. Write middle 8-bits of coefficient in I2C address-0X1F 4. Write bottom 8-bits of coefficient in I2C address-0X20 5. Write 1 to W1 bit and write 1/0 to RBS in address-0X2D Write three coefficients to RAM: 1. Write 7-bis of address to I2C address-0X1D 2. Write top 8-bits of coefficient A1 in I2C address-0X1E 3. Write middle 8-bits of coefficient A1 in I2C address-0X1F 4. Write bottom 8-bits of coefficient A1 in I2C address-0X20 5. Write top 8-bits of coefficient A2 in I2C address-0X21 6. Write middle 8-bits of coefficient A2 in I2C address-0X22 7. Write bottom 8-bits of coefficient A2 in I2C address-0X23 8. Write top 8-bits of coefficient B1 in I2C address-0X24 9. Write middle 8-bits of coefficient B1 in I2C address-0X25 10. Write bottom 8-bits of coefficient B1 in I2C address-0X26 Write 1 to W3 bit and write 1/0 to RBS in address-0X2D Write a set of coefficients to RAM: 1. Write 7-bits of address to I2C address-0X1D 2. Write top 8-bits of coefficient A1 in I2C address-0X1E 3. Write middle 8-bits of coefficient A1 in I2C address-0X1F 4. Write bottom 8-bits of coefficient A1 in I2C address-0X20 5. Write top 8-bits of coefficient A2 in I2C address-0X21 6. Write middle 8-bits of coefficient A2 in I2C address-0X22 7. Write bottom 8-bits of coefficient A2 in I2C address-0X23 8. Write top 8-bits of coefficient B1 in I2C address-0X24 9. Write middle 8-bits of coefficient B1 in I2C address-0X25 10. Write bottom 8-bits of coefficient B1 in I2C address-0X26 11. Write top 8-bits of coefficient B2 in I2C address-0X27 12. Write middle 8-bits of coefficient B2 in I2C address-0X28 13. Write bottom 8-bits of coefficient B2 in I2C address-0X29 14. Write top 8-bits of coefficient A0 in I2C address-0X2A 15. Write middle 8-bits of coefficient A0 in I2C address-0X2B 16. Write bottom 8-bits of coefficient A0 in I2C address-0X2C 17. Write 1 to WA bit and write 1/0 to RBS in address-0X2D

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 94/114 Note that: the read and write operation on RAM coefficients works only if LRCIN (pin-15) switching on rising edge. And, before each writing operation, it is necessary to read the address -0X2D to confirm whether RAM is writable current in first. If the logic of W1 or W3 or WA is high, the coefficient writing is prohibited.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 95/114  User-defined equalizer The AD85050 provides 30 parametric Equalizer (EQ). Users can program suitable coefficients via I 2C control interface to program the required audio band frequency response for every EQ. The transfer function The data format of 2’s complement binary code for EQ coefficient is 3.21 . i.e., 3-bits for integer (MSB is the sign bit) and 21 -bits for mantissa. Each coefficient range i s from 0x800000 ( -4) to 0x7FFFFF (+3.999999523). These coefficients are stored in User Defined RAM and are referenced in following manner: Where x and y represents the number of channel and the band number of EQ biquard. All user-defined filters are path -through, where all coefficients are defaulted to 0 after being powered up, except the A0 that is set to 0x200000 which represents 1.  EQ arrangement AD85050 provides 18 Eqs per channel. When, register with address -0X0C, bit -5, DEQE is set to high, the E Q7, EQ 8, EQ9, and EQ10 will use another filter coefficient stored in used defined RAM 0X68~0X7B. When, register with address -0X0C, bit-6, BTE is set to high, the EQ11 and EQ 12 will perform as bass and treble respectively. When three bands DRC enable, EQ13, EQ14, and EQ15, EQ16, EQ17, EQ 18 will perform as APF1/BPF1, LPF1, HPF1, APF2/BPF2, LPF2 and HPF2 respectively. 1)(   zBzB zAzAAzH BCHxEQyB BCHxEQyB ACHxEQyA ACHxEQyA ACHxEQyA

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 96/114  Mixer The AD85050 provides mixers to generate the extra audio source from the input left and right channels. The coefficients of mixers are defined in range from 0x800000 ( -1) to 0x7FFFFF (0. 9999998808). The function block diagram is as following:

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 97/114  Pre-scale For each audio channel, AD85050 can scale input signal level prior to EQ processing which is realized by a 24-bit signed fractional multiplier. The pre -scale factor, ranging from -1 (0x800000) to 0. 9999998808 (0x7FFFFF), for this multiplier, can be loaded into RAM. The default values of the pre-scaling factors are set to 0x7FFFFF. Programming of RAM is described in RAM access.  Post-scale The AD85050 provides an additional multiplication after equalizing and before interpolation stage, which is realized by a 24 -bit signed fractional multiplier. The post -scaling factor, ranging from -1 (0x800000) to 0.9999998808 (0x7FFFFF), for this mu ltiplier, can be loaded into RAM. The default values of the post-scaling factors are set to 0x7FFFFF. All channels can use the channel-1 post-scale factor by setting the post-scale link. Programming of RAM is described in RAM access.  Power Clipping The AD85050 provides power clipping function to avoid excessive signal that may destroy loud speaker. 3. The power clipping level is defined by 24-bit representation and is stored in RAM address 0X55 of RAM bank 0. The following table shows the power clipping level’s numerical representation. Sample calculation for power clipping Max amplitude dB Linear Decimal Hex (3.21 format) PVCC 0 1 2097152 200000 PVCC*0.707 -3 0.707 1482686 169FBE PVCC*0.5 -6 0.5 1048576 100000 PVCC*L x L=10(x/20) D=2097152xL H=dec2hex(D)  Attack threshold The AD85050 provides DRC function. When the input RMS exceeds the programmable attack threshold value, the output power will be limited by this threshold power level via gradual gain reduction. Four sets of DRC are provided. DRC1 is used for high frequency path in three bands DRC and used for L/R channel in one band DRC. DRC2 is used for low frequency path in three bands DRC. DRC3 is used for band pass frequency path in three bands DRC. DRC4 is used for the post DRC. Attack threshold is defined by 24-bit presentation and is stored in RAM address 0X56, 0X58, 0X5A, 0X5C of RAM bank 0.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 98/114  Release threshold After AD85050 has reached the attack threshold, its output power will be limited to that level. The output power level will be gradually adjusted to the programmable release threshold level. Release threshold is defined by 24-bit representation and is stored in RAM address 0X57, 0X59, 0X5B, and 0X5D of RAM bank 0. The following table shows the attack and release threshold’s numerical representation. Sample calculation for attack and release threshold Power dB Linear Decimal Hex (3.21 format) (PVCC^2)/R 0 1 2097152 200000 (PVCC^2)/2R -3 0.5 1048576 100000 (PVCC^2)/4R -6 0.25 524288 80000 ((PVCC^2)/R)*L x L=10(x/10) D=2097152xL H=dec2hex(D) To best illustrate the power limit function, please refer to the following figure. GAIN Under release threshold Touch attack threshold Attack threshold Attack threshold Release threshold Release threshold Attack threshold Attack threshold Release threshold Release threshold Δ gain1 Δ gain2 Δ t1 Δ t2 Attack rate=Δ gain1/Δt1 Release rate=Δ gain2/Δt2 INPUTOUTPUT

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 99/114  Noise Gate Attack Level When both left and right signals have 2048 consecutive sample points l ess than the programmable noise gate attack level, the audio signal will multiply noise gate gain, which can be set at x1/8, x1/4, x1/2, or zero if the noise gate function is enabled. Noise gate attack level is defined by 24-bit representation and is stored in RAM address 0X5E of RAM bank 0.  Noise Gate Release Level After entering the noise gating status, the noise gain will be removed whenever AD85050 receives any input signal that is more than the noise gate release level. Noise gate release level is de fined by 24 -bit representation and is stored in RAM address 0X5F of RAM bank 0. The following table shows the noise gate attack and release threshold level’s numerical representation. Sample calculation for noise gate attack and release level Input amplitude (dB) Linear Decimal Hex (1.23 format) 0 1 8388607 7FFFFF -100 10-5 83 53 -110 10-5.5 26 1A x L=10(x/20) D=8388607xL H=dec2hex(D)  DRC Energy Coefficient x2[n] DRC_EC Z-1 xrms[n] 1-DRC_EC The above figure illustrates the digital processing of calculat ing RMS signal power. In this processing, a DRC energy coefficient is required, which can be programmed for different frequency range. Four sets of energy coefficients are provided and used for respective DRC. Energy coefficient is defined by 24 -bit representation and is stored in RAM address 0X60, 0X61, 0X62, and 0X63 of RAM bank 0. The following table shows the DRC energy coefficient numerical representation.

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 100/114 Sample calculation for DRC energy coefficient DRC energy coefficient dB Linear Decimal Hex (1.23 format) 1 0 1 8388607 7FFFFF 1/256 -48.2 1/256 32768 8000 1/1024 -60.2 1/1024 8192 2000 L x L=10(x/20) D=8388607xL H=dec2hex(D) The user defined RAM The contents of user defined RAM is represented in following table. Ram Bank selection = 0 Address NAME Coefficient Default 0x00 1st SET Channel-1 EQ1 CH1EQ1A1 0x000000 0x01 CH1EQ1A2 0x000000 0x02 CH1EQ1B1 0x000000 0x03 CH1EQ1B2 0x000000 0x04 CH1EQ1A0 0x200000 0x05 1st SET Channel-1 EQ2 CH1EQ2A1 0x000000 0x06 CH1EQ2A2 0x000000 0x07 CH1EQ2B1 0x000000 0x08 CH1EQ2B2 0x000000 0x09 CH1EQ2A0 0x200000 0x0A 1st SET Channel-1 EQ3 CH1EQ3A1 0x000000 0x0B CH1EQ3A2 0x000000 0x0C CH1EQ3B1 0x000000 0x0D CH1EQ3B2 0x000000 0x0E CH1EQ3A0 0x200000 0x0F 1st SET Channel-1 EQ4 CH1EQ4A1 0x000000 0x10 CH1EQ4A2 0x000000 0x11 CH1EQ4B1 0x000000 0x12 CH1EQ4B2 0x000000 0x13 CH1EQ4A0 0x200000 0x14 1st SET Channel-1 EQ5 CH1EQ5A1 0x000000 0x15 CH1EQ5A2 0x000000 0x16 CH1EQ5B1 0x000000 0x17 CH1EQ5B2 0x000000 0x18 CH1EQ5A0 0x200000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 101/114 0x19 1st SET Channel-1 EQ6 CH1EQ6A1 0x000000 0x1A CH1EQ6A2 0x000000 0x1B CH1EQ6B1 0x000000 0x1C CH1EQ6B2 0x000000 0x1D CH1EQ6A0 0x200000 0x1E 1st SET Channel-1 EQ7 CH1EQ7A1 0x000000 0x1F CH1EQ7A2 0x000000 0x20 CH1EQ7B1 0x000000 0x21 CH1EQ7B2 0x000000 0x22 CH1EQ7A0 0x200000 0x23 1st SET Channel-1 EQ8 CH1EQ8A1 0x000000 0x24 CH1EQ8A2 0x000000 0x25 CH1EQ8B1 0x000000 0x26 CH1EQ8B2 0x000000 0x27 CH1EQ8A0 0x200000 0x28 1st SET Channel-1 EQ9 CH1EQ9A1 0x000000 0x29 CH1EQ9A2 0x000000 0x2A CH1EQ9B1 0x000000 0x2B CH1EQ9B2 0x000000 0x2C CH1EQ9A0 0x200000 0x2D 1st SET Channel-1 EQ10 CH1EQ10A1 0x000000 0x2E CH1EQ10A2 0x000000 0x2F CH1EQ10B1 0x000000 0x30 CH1EQ10B2 0x000000 0x31 CH1EQ10A0 0x200000 0x32 1st SET Channel-1 EQ11 CH1EQ11A1 0x000000 0x33 CH1EQ11A2 0x000000 0x34 CH1EQ11B1 0x000000 0x35 CH1EQ11B2 0x000000 0x36 CH1EQ11A0 0x200000 0x37 1st SET Channel-1 EQ12 CH1EQ12A1 0x000000 0x38 CH1EQ12A2 0x000000 0x39 CH1EQ12B1 0x000000 0x3A CH1EQ12B2 0x000000 0x3B CH1EQ12A0 0x200000 0x3C 1st SET Channel-1 EQ13 CH1EQ13A1 0x000000 0x3D CH1EQ13A2 0x000000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 102/114 0x3E CH1EQ13B1 0x000000 0x3F CH1EQ13B2 0x000000 0x40 CH1EQ13A0 0x200000 0x41 1st SET Channel-1 EQ14 CH1EQ14A1 0x000000 0x42 CH1EQ14A2 0x000000 0x43 CH1EQ14B1 0x000000 0x44 CH1EQ14B2 0x000000 0x45 CH1EQ14A0 0x200000 0x46 1st SET Channel-1 EQ15 CH1EQ15A1 0x000000 0x47 CH1EQ15A2 0x000000 0x48 CH1EQ15B1 0x000000 0x49 CH1EQ15B2 0x000000 0x4A CH1EQ15A0 0x200000 0x4B Channel-1 Mixer1 M11 0x7FFFFF 0x4C Channel-1 Mixer2 M12 0x000000 0x4D Channel-1 Prescale C1PRS 0x080000 0x4E Channel-1 Postscale C1POS 0x200000 0X4F A0 of L channel SRS HPF LSRSH_A0 C7B691 0X50 A1 of L channel SRS HPF LSRSH_A1 38496E 0X51 B1 of L channel SRS HPF LSRSH_B1 C46f8 0X52 A0 of L channel SRS LPF LSRSL_A0 E81B9 0X53 A1 of L channel SRS LPF LSRSL_A1 F22C12 0X54 B1 of L channel SRS LPF LSRSL_ B1 FCABB 0x55 CH1.2 Power Clipping PC1 0x200000 0X56 CH1 DRC1 Attack threshold DRC1_ATH 0x200000 0X57 CH1 DRC1 Release threshold DRC1_RTH 0x80000 0X58 CH3 DRC2 Attack threshold DRC2_ATH 0x200000 0X59 CH3 DRC2 Release threshold DRC2_RTH 0x80000 0x5A CH5 DRC3 Attack threshold DRC3_ATH 0x200000 0x5B CH5 DRC3 Release threshold DRC3_RTH 0x80000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 103/114 0x5C CH7 DRC4 Attack threshold DRC4_ATH 0x200000 0x5D CH7 DRC4 Release threshold DRC4_RTH 0x80000 0x5E Noise Gate Attack Level NGAL 0x00001A 0x5F Noise Gate Release Level NGRL 0x000053 0x60 DRC1 Energy Coefficient DRC1_EC 0x8000 0X61 DRC2 Energy Coefficient DRC2_EC 0x2000 0x62 DRC3 Energy Coefficient DRC3_EC 0x8000 0X63 DRC4 Energy Coefficient DRC4_EC 0x2000 0X64 DRC1 Power Meter C1_RMS 0X65 DRC3 Power Meter C3_RMS 0X66 DRC5 Power Meter C5_RMS 0X67 DRC7 Power Meter C7_RMS 0x68 2nd SET Channel-1 EQ1 CH1DEQ1A1 0x000000 0x69 CH1DEQ1A2 0x000000 0x6A CH1DEQ1B1 0x000000 0x6B CH1DEQ1B2 0x000000 0x6C CH1DEQ1A0 0x200000 0x6D 2nd SET Channel-1 EQ2 CH1DEQ2A1 0x000000 0x6E CH1DEQ2A2 0x000000 0x6F CH1DEQ2B1 0x000000 0x70 CH1DEQ2B2 0x000000 0x71 CH1DEQ2A0 0x200000 0x72 2nd SET Channel-1 EQ3 CH1DEQ3A1 0x000000 0x73 CH1DEQ3A2 0x000000 0x74 CH1DEQ3B1 0x000000 0x75 CH1DEQ3B2 0x000000 0x76 CH1DEQ3A0 0x200000 0x77 2nd SET Channel-1 EQ4 CH1DEQ4A1 0x000000 0x78 CH1DEQ4A2 0x000000 0x79 CH1DEQ4B1 0x000000 0x7A CH1DEQ4B2 0x000000 0x7B CH1DEQ4A0 0x200000 0X7C~0X7F Reserved 0x80 MF LPF1 Channel-1 CH1MFLPF1A1 0x0000D3 0x81 CH1MFLPF1A2 0x000069

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 104/114 0x82 CH1MFLPF1B1 0x3F594D 0x83 CH1MFLPF1B2 0xE0A50D 0x84 CH1MFLPF1A0 0x000069 0x85 MF LPF2 Channel-1 CH1MFLPF2A1 0x0000D3 0x86 CH1MFLPF2A2 0x000069 0x87 CH1MFLPF2B1 0x3F594D 0x88 CH1MFLPF2B2 0xE0A50D 0x89 CH1MFLPF2A 0x000069 0x8A MF BPF1 Channel-1 CH1MFBPF1A1 0x000000 0x8B CH1MFBPF1A2 0xFFC63B 0x8C CH1MFBPF1B1 0x3F594D 0x8D CH1MFBPF1B2 0xE0A50D 0x8E CH1MFBPF1A0 0x0039C5 0x8F MF BPF2 Channel-1 CH1MFBPF2A1 0x000000 0x90 CH1MFBPF2A2 0xFFC63B 0x91 CH1MFBPF2B1 0x3F594D 0x92 CH1MFBPF2B2 0xE0A50D 0x93 CH1MFBPF2A0 0x0039C5 0x94 MF positive CLIP Channel-1 CH1MFPCLP 0x080000 0x95 MF G1 Channel-1 CH1MFG1 0x019AFD 0x96 MF G2 Channel-1 CH1MFG2 0x080000 0x97 MF G3 Channel-1 CH1MFG3 0x0B4CE0 0X98 MF negative CLIP Channel-1 CH1MFNCLP 0x080000 0X99 MF G4 Channel-1 CH1MFG4 0X080000 0X9A~0X9F Reserved 0xA0 1st SET Channel-1 EQ16 CH1EQ16A1 0x000000 0XA1 CH1EQ16A2 0x000000 0xA2 CH1EQ16B1 0x000000 0XA3 CH1EQ16B2 0x000000 0XA4 CH1EQ16A0 0x200000 0XA5 1st SET CH1EQ17A1 0x000000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 105/114 0XA6 Channel-1 EQ17 CH1EQ17A2 0x000000 0XA7 CH1EQ17B1 0x000000 0xA8 CH1EQ17B2 0x000000 0xA9 CH1EQ17A0 0x200000 0xAA 1st SET Channel-1 EQ18 CH1EQ18A1 0x000000 0xAB CH1EQ18A2 0x000000 0xAC CH1EQ18B1 0x000000 0xAD CH1EQ18B2 0x000000 0xAE CH1EQ18A0 0x200000 0xAF Dynamic bass DRC attack threshold Channel-1 CH1SMBDRCATH 0x200000 0xB0 Dynamic bass DRC release threshold Channel-1 CH1SMBDRCRTH 0x080000 0xB1 Boost chip control attack threshold1 BSTCHIP_ATH1 0x020000 0xB2 Boost chip control attack threshold2 BSTCHIP_ATH2 0x008000 0xB3 Boost chip control attack threshold3 BSTCHIP_ATH3 0x002000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 106/114 Ram Bank selection = 1 Address NAME Coefficient Default 0x00 1st SET Channel-2 EQ1 CH2EQ1A1 0x000000 0x01 CH2EQ1A2 0x000000 0x02 CH2EQ1B1 0x000000 0x03 CH2EQ1B2 0x000000 0x04 CH2EQ1A0 0x200000 0x05 1st SET Channel-2 EQ2 CH2EQ2A1 0x000000 0x06 CH2EQ2A2 0x000000 0x07 CH2EQ2B1 0x000000 0x08 CH2EQ2B2 0x000000 0x09 CH2EQ2A0 0x200000 0x0A 1st SET Channel-2 EQ3 CH2EQ3A1 0x000000 0x0B CH2EQ3A2 0x000000 0x0C CH2EQ3B1 0x000000 0x0D CH2EQ3B2 0x000000 0x0E CH2EQ3A0 0x200000 0x0F 1st SET Channel-2 EQ4 CH2EQ4A1 0x000000 0x10 CH2EQ4A2 0x000000 0x11 CH2EQ4B1 0x000000 0x12 CH2EQ4B2 0x000000 0x13 CH2EQ4A0 0x200000 0x14 1st SET Channel-2 EQ5 CH2EQ5A1 0x000000 0x15 CH2EQ5A2 0x000000 0x16 CH2EQ5B1 0x000000 0x17 CH2EQ5B2 0x000000 0x18 CH2EQ5A0 0x200000 0x19 1st SET Channel-2 EQ6 CH2EQ6A1 0x000000 0x1A CH2EQ6A2 0x000000 0x1B CH2EQ6B1 0x000000 0x1C CH2EQ6B2 0x000000 0x1D CH2EQ6A0 0x200000 0x1E 1st SET Channel-2 EQ7 CH2EQ7A1 0x000000 0x1F CH2EQ7A2 0x000000 0x20 CH2EQ7B1 0x000000 0x21 CH2EQ7B2 0x000000 0x22 CH2EQ7A0 0x200000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 107/114 0x23 1st SET Channel-2 EQ8 CH2EQ8A1 0x000000 0x24 CH2EQ8A2 0x000000 0x25 CH2EQ8B1 0x000000 0x26 CH2EQ8B2 0x000000 0x27 CH2EQ8A0 0x200000 0x28 1st SET Channel-2 EQ9 CH2EQ9A1 0x000000 0x29 CH2EQ9A2 0x000000 0x2A CH2EQ9B1 0x000000 0x2B CH2EQ9B2 0x000000 0x2C CH2EQ9A0 0x200000 0x2D 1st SET Channel-2 EQ10 CH2EQ10A1 0x000000 0x2E CH2EQ10A2 0x000000 0x2F CH2EQ10B1 0x000000 0x30 CH2EQ10B2 0x000000 0x31 CH2EQ10A0 0x200000 0x32 1st SET Channel-2 EQ11 CH2EQ11A1 0x000000 0x33 CH2EQ11A2 0x000000 0x34 CH2EQ11B1 0x000000 0x35 CH2EQ11B2 0x000000 0x36 CH2EQ11A0 0x200000 0x37 1st SET Channel-2 EQ12 CH2EQ12A1 0x000000 0x38 CH2EQ12A2 0x000000 0x39 CH2EQ12B1 0x000000 0x3A CH2EQ12B2 0x000000 0x3B CH2EQ12A0 0x200000 0x3C 1st SET Channel-2 EQ13 CH2EQ13A1 0x000000 0x3D CH2EQ13A2 0x000000 0x3E CH2EQ13B1 0x000000 0x3F CH2EQ13B2 0x000000 0x40 CH2EQ13A0 0x200000 0x41 1st SET Channel-2 EQ14 CH2EQ14A1 0x000000 0x42 CH2EQ14A2 0x000000 0x43 CH2EQ14B1 0x000000 0x44 CH2EQ14B2 0x000000 0x45 CH2EQ14A0 0x200000 0x46 1st SET Channel-2 EQ15 CH2EQ15A1 0x000000 0x47 CH2EQ15A2 0x000000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 108/114 0x48 CH2EQ15B1 0x000000 0x49 CH2EQ15B2 0x000000 0x4A CH2EQ15A0 0x200000 0x4b Channel-2 Mixer1 M21 0x000000 0x4c Channel-2 Mixer2 M22 0x7FFFFF 0x4D Channel-2 Prescale C2PRS 0x080000 0x4E Channel-2 Postscale C2POS 0x200000 0X4F A0 of R channel SRS HPF RSRSH_A0 C7B691 0X50 A1 of R channel SRS HPF RSRSH_A1 38496E 0X51 B1 of R channel SRS HPF RSRSH_B1 C46f8 0X52 A0 of R channel S RS LPF RSRSL_A0 E81B9 0X53 A1 of R channel SRS LPF RSRSL_A1 F22C12 0X54 B1 of R channel SRS LPF RSRSL_ B1 FCABB 0x55 Reserved 0X56 Reserved 0X57 Reserved 0X58 Reserved 0X59 Reserved 0x5A Reserved 0x5B Reserved 0x5C Reserved 0x5D Reserved 0x5E Reserved 0x5F Reserved 0x60 Reserved 0X61 Reserved 0x62 Reserved 0X63 Reserved 0X64 DRC2 Power Meter C2_RMS 0X65 DRC4 Power Meter C4_RMS 0X66 DRC6 Power Meter C6_RMS 0X67 DRC8 Power Meter C8_RMS 0x68 2nd SET Channel-2 EQ1 CH2EQ1A1 0x000000 0x69 CH2EQ1A2 0x000000 0x6A CH2EQ1B1 0x000000 0x6B CH2EQ1B2 0x000000 0x6C CH2EQ1A0 0x200000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 109/114 0x6D 2nd SET Channel-2 EQ2 CH2EQ2A1 0x000000 0x6E CH2EQ2A2 0x000000 0x6F CH2EQ2B1 0x000000 0x70 CH2EQ2B2 0x000000 0x71 CH2EQ2A0 0x200000 0x72 2nd SET Channel-2 EQ3 CH2EQ3A1 0x000000 0x73 CH2EQ3A2 0x000000 0x74 CH2EQ3B1 0x000000 0x75 CH2EQ3B2 0x000000 0x76 CH2EQ3A0 0x200000 0x77 2nd SET Channel-2 EQ4 CH2EQ4A1 0x000000 0x78 CH2EQ4A2 0x000000 0x79 CH2EQ4B1 0x000000 0x7A CH2EQ4B2 0x000000 0x7B CH2EQ4A0 0x200000 0x80 MF LPF1 Channel-2 CH2MFLPF1A1 0x0000D3 0x81 CH2MFLPF1A2 0x000069 0x82 CH2MFLPF1B1 0x3F594D 0x83 CH2MFLPF1B2 0xE0A50D 0x84 CH2MFLPF1A0 0x000069 0x85 MF LPF2 Channel-2 CH2MFLPF2A1 0x0000D3 0x86 CH2MFLPF2A2 0x000069 0x87 CH2MFLPF2B1 0x3F594D 0x88 CH2MFLPF2B2 0xE0A50D 0x89 CH2MFLPF2A0 0x000069 0x8A MF BPF1 Channel-2 CH2MFBPF1A1 0x000000 0x8B CH2MFBPF1A2 0xFFC63B 0x8C CH2MFBPF1B1 0x3F594D 0x8D CH2MFBPF1B2 0xE0A50D 0x8E CH2MFBPF1A0 0x0039C5 0x8F MF BPF2 Channel-2 CH2MFBPF2A1 0x000000 0x90 CH2MFBPF2A2 0xFFC63B 0x91 CH2MFBPF2B1 0x3F594D 0x92 CH2MFBPF2B2 0xE0A50D 0x93 CH2MFBPF2A0 0x0039C5 0x94 MF CLIP Channel-2 CH2MFCLP 0x080000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 110/114 0x95 MF G1 Channel-2 CH2MFG1 0x019AFD 0x96 MF G2 Channel-2 CH2MFG2 0x080000 0x97 MF G3 Channel-2 CH2MFG3 0x0B4CE0 0X98 MF negative CLIP Channel-1 CH1MFNCLP 0x080000 0X99 MF G4 Channel-1 CH1MFG4 0X080000 0X9A~0X9F Reserved 0xA0 1st SET Channel-2 EQ16 CH2EQ16A1 0x000000 0XA1 CH2EQ16A2 0x000000 0xA2 CH2EQ16B1 0x000000 0XA3 CH2EQ16B2 0x000000 0XA4 CH2EQ16A0 0x200000 0XA5 1st SET Channel-2 EQ17 CH2EQ16A1 0x000000 0XA6 CH2EQ17A2 0x000000 0XA7 CH2EQ17B1 0x000000 0xA8 CH2EQ17B2 0x000000 0xA9 CH2EQ17A0 0x200000 0xAA 1st SET Channel-2 EQ18 CH2EQ17A1 0x000000 0xAB CH2EQ18A2 0x000000 0xAC CH2EQ18B1 0x000000 0xAD CH2EQ18B2 0x000000 0xAE CH2EQ18A0 0x200000 0xAF Dynamic bass DRC attack threshold Channel-2 CH2SMBDRCATH 0x200000 0xB0 Dynamic bass DRC release threshold Channel-2 CH2SMBDRCRTH 0x080000 0xB1 Boost chip control release threshold1 BSTCHIP_RTH1 0x010000 0xB2 Boost chip control release threshold2 BSTCHIP_RTH2 0x004000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 111/114 0xB3 Boost chip control release threshold3 BSTCHIP_RTH3 0x001000

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 112/114 Package Dimensions E-LQFP-48L (7mm x 7mm) SIDE VIEW b e DETAIL A L DETAIL A c D E1E TOP VIEW 12 25 2413 1225 24 13 BOTTOM VIEW A Exposed pad Min Max A -- 1.60 Min Max A1 0.05 0.15 D2 4.31 5.21 b 0.17 0.27 E2 4.31 5.21 c 0.09 0.20 D 6.90 7.10 D1 8.90 9.10 E 6.90 7.10 E1 8.90 9.10 e L 0.45 0.75 Dimension in mmSymbol Dimension in mm

0.50 BSC

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 113/114

Revision History

0.1 2019.03.29 Initial draft version. 0.2 2019.05.13 Add DAC performance 0.3 2019.07.09 Update address 0X01 : state control 2 1.0 2019.08.01 Remove “Preliminary” and revise to 1.0 1.1 2019.09.02 1. Modify recommended Operating Conditions 2. Modify general Electrical Characteristics 3. Modify register table 4. Modify HP Master volume 5. Modify Write a single coefficient to RAM 1.2 2019.11.07 Modify Recommended Operating Conditions. Modify General Electrical Characteristics. Modify Function block. Modify Application Circuit Example for Stereo. Modify Application Circuit Example for Mono. Modify Power on sequence for Fs=48KHz & 96KHz. Modify PBTL (Mono) function. Add address 0x84~0x86 register table. 1.3 2019.12.02 Modify Application Circuit Example for Mono. 1.4 2020.01.06 1.Modify application Circuit Example for stereo mono. 2.Add System Clock Timing. 3.Modify under voltage detection. 1.5 2020.03.03 Modify Pin Assignment description. 1.6 2021.09.13 Modify address 0x1C data. 1.7 2022.08.30 Remove "Support initial EEPROM setting".

Elite Semiconductor Microelectronics Technology Inc. Publication Date: Aug. 2022 Revision: 1.7 114/114 Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are b elieved to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application , adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.