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High Common-Mode Voltage, Bidirectional Current Shunt Amplifier Data Sheet AD8206 Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 © 2005–2012 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com

FEATURES

Ideal for current shunt applications High common-mode voltage range −2 V to +65 V operating −25 V to +75 V survival Gain = 20 Wide operating temperature range −40°C to +125°C for Y grade and WY grade −40°C to +150°C for WH grade Bidirectional operation Available in 8-lead SOIC Qualified for automotive applications EXCELLENT AC AND DC PERFORMANCE 15 µV/°C offset drift 30 ppm/°C gain drift 80 dB CMRR dc to 20 kHz

APPLICATIONS

High-side current sensing in Motor controls Transmission controls Diesel-injection controls Engine management Suspension controls Vehicle dynamic controls DC-to-dc converters FUNCTIONAL BLOCK DIAGRAM 04953-001 AD8206 +IN –IN NC NC = NO CONNECT GND OUT VREF1 VREF2 Figure 1. GENERAL DESCRIPTION The AD8206 is a single-supply difference amplifier for amplifying small differential voltages in the presence of large common-mode voltages. The operating input common-mode voltage range extends from −2 V to +65 V . The typical single- supply voltage is 5 V . The AD8206 is offered in an 8-lead SOIC package. The Y grade and WY grade models are rated for operation from −40°C to +125°C. The WH grade is rated from −40°C to +150°C. Excellent DC performance over temperature keeps errors in the measurement loop to a minimum. Offset drift is typically less than 15 µV/°C, and gain drift is typically below 30 ppm/°C. The output offset can be adjusted from 0.08 V to 4.7 V with a 5 V supply by using the VREF1 and VREF2 pins. With VREF1 attached to the V+ pin, and VREF2 attached to the GND pin, the output is set at half scale. Attaching both pins to GND causes the output to be unipolar, starting near ground. Attaching both pins to V+ causes the output to be unipolar starting near V+. Other offsets can be obtained by applying an external voltage to the V REF1 and VREF2 pins.

Rev. B | Page 2 of 16 TABLE OF CONTENTS

REVISION HISTORY

11/12—Rev. A to Rev. B Change to Product Title, Features Section, and General Added Y Grade and WY Grade Parameter, Table 2 and WH 5/10—Rev. 0 to Rev. A 7/05—Revision 0: Initial Version

Rev. B | Page 3 of 16 SPECIFICATIONS TA = operating temperature range, VS = 5 V , unless otherwise noted. Table 1. Parameter Test Conditions/Comments AD8206 SOIC Unit Min Typ Max GAIN Initial 20 V/V Accuracy VO ≥ 0.1 V dc, 25°C ±1 % Accuracy Over Temperature Specified temperature range ±1.2 % Gain vs. Temperature 30 ppm/°C VOL TAGE OFFSET Offset Voltage (RTI) 25°C ±2 mV Over Temperature (RTI) Specified temperature range ±4.5 mV Offset Drift 15 µV/°C INPUT Input Impedance Differential 400 kΩ Common Mode 200 kΩ Input Voltage Range Common mode, continuous −2 +65 V Differential1 250 mV Common-Mode Rejection 25°C, f = dc to 20 kHz2 76 86 dB Operating temperature range, f = dc to 20 kHz2 76 80 dB OUTPUT Output Voltage Range AD8206YRZ, RL = 25 kΩ 0.08 4.7 V AD8206WYRZ, RL = 25 kΩ 0.08 4.7 V AD8206WHRZ, RL = 25 kΩ 0.08 4.65 V Output Resistance 2 Ω DYNAMIC RESPONSE Small Signal −3 dB Bandwidth 100 kHz Slew Rate 0.5 V/µs NOISE

0.1 Hz to 10 Hz, RTI 20 µV p-p

Spectral Density, 1 kHz, RTI 0.5 µV/√Hz OFFSET ADJUSTMENT Ratiometric Accuracy3 Divider to supplies 0.497 0.503 V/V Accuracy, RTO Voltage applied to VREF1 and VREF2 in parallel ±2 mV/V Output Offset Adjustment Range AD8206YRZ, VS = 5 V 0.08 4.7 V AD8206WYRZ, VS = 5 V 0.08 4.7 V AD8206WHRZ, VS = 5 V 0.08 4.65 V VREF Input Voltage Range 0.0 VS V VREF Divider Resistor Values 24 32 40 kΩ

Rev. B | Page 4 of 16 Parameter Test Conditions/Comments AD8206 SOIC Unit Min Typ Max POWER SUPPLY Operating Range 4.5 5.5 V Quiescent Current Over Temperature AD8206YRZ, VO = 0.1 V dc 2 mA AD8206WYRZ, VO = 0.1 V dc 2 mA AD8206WHRZ, VO = 0.1 V dc 2.2 mA Power Supply Rejection Ratio 70 dB OPERATING TEMPERATURE RANGE For Specified Performance AD8206YRZ −40 +125 °C AD8206WYRZ −40 +125 °C AD8206WHRZ −40 +150 °C 1 Input voltage range = ±125 mV with half-scale offset. 2 Source imbalance < 2 Ω. 3 The offset adjustment is ratiometric to the power supply when VREF1 and VREF2 are used as a divider between the supplies.

Rev. B | Page 5 of 16 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage 12.5 V Continuous Input Voltage −25 V to +75 V Input Transient Survival −30 V to +80 V Differential Input Survival −25 V to 75 V Reverse Supply Voltage 0.3 V Operating Temperature Range Y Grade and WY Grade −40°C to +125°C WH Grade −40°C to +150°C Storage Temperature Range −65°C to +150°C Output Short-Circuit Duration Indefinite Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION

Figure 2. Metallization Diagram Figure 3. Pin Configuration Table 3. Pin Function Descriptions

2 GND −447 +34

3 VREF2 −432 −480

4 NC N/A N/A

5 OUT +444 −495

6 V+ +444 −227

7 VREF1 +456 +342

Die size is 1245 µm by 1400 µm. Passivation type is 8KA USG (Oxide) + 10KA Oxynitride. Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu.

common-mode voltage. It is offered in an 8-lead SOIC package. The gain of the AD8206 is 20 V/V , with an accuracy of 1.2%. to +150°C, with the same accuracy of 1.2%. rejection ratio over the operating temperature is 76 dB. S = 5 V) for unidirectional and bidirectional operation. for a simplified schematic diagram (bias circuit not shown). created by a common-mode voltage is 0 V at the inputs of A1. A, RB, and RC is approximately 200 kΩ ± 20%. reference voltage of 250 mV biases the attenuator above ground.

1 V/V from the reference pins to the output when the reference

the resistor ratio matching to better than 0.01%. a 300 µA current sink pull-down. Figure 16. Simplified Schematic

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 25. 8-Lead Standard Small Outline Package [SOIC_N] 2 W = Qualified for Automotive Applications. obtain the specific Automotive Reliability reports for these models.

Rev. B | Page 14 of 16 NOTES

Rev. B | Page 15 of 16 NOTES

Rev. B | Page 16 of 16 NOTES ©2005–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04953–0–12/ 12(B)