AD8001AR

AD8001_03 AD | Alldatasheet

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REV. D a AD8001 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.

800 MHz, 50 mW

Current Feedback Amplifier

FEATURES

Excellent Video Specifications (R L = 150 /H9024, G = +2) Gain Flatness 0.1 dB to 100 MHz 0.01% Differential Gain Error 0.025 /H11543 Differential Phase Error Low Power 5.5 mA Max Power Supply Current (55 mW) High Speed and Fast Settling

880 MHz, –3 dB Bandwidth (G = +1)

440 MHz, –3 dB Bandwidth (G = +2)

1200 V/ /H9262s Slew Rate

10 ns Settling Time to 0.1% Low Distortion –65 dBc THD, f C = 5 MHz 33 dBm Third Order Intercept, F 1 = 10 MHz –66 dB SFDR, f = 5 MHz High Output Drive 70 mA Output Current Drives Up to 4 Back-Terminated L oads (75 /H9024 Each) While Maintaining Good Differential Gain/Phase Performance (0.05%/0.25 /H11543)

APPLICATIONS

–IN NC +IN NC = NO CONNECT OUT 1VOUT AD8001 –VS +IN 5 +VS –IN GENERAL DESCRIPTION The AD8001 is a low power, high speed amplifier designed to operate on ± 5V supplies. The AD8001 features unique GAIN – dB –12 10M 100M 1G FREQUENCY – Hz VS = /H115505V RFB = 820/H9024 VS = /H115505V RFB = 1k/H9024 G = +2 RL = 100/H9024 Figure 1. Frequency Response of AD8001 buffer high speed A-to-D converters. where size and power are critical. available in the industrial temperature range of –40°C to +85 °C. Figure 2. Transient Response of AD8001; 2 V Step, G = +2

REV. D–2– AD8001–SPECIFICATIONS(@ TA = + 25/H11543C, VS = /H115505 V, RL = 100 /H9024, unless otherwise noted.) AD8001A Model Conditions Min Typ Max Unit DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth, N Package G = +2, < 0.1 dB Peaking, R F = 750 Ω 350 440 MHz G= +1, < 1 dB Peaking, R F = 1 kΩ 650 880 MHz R Package G = +2, < 0.1 dB Peaking, R F = 681 Ω 350 440 MHz G= +1, < 0.1 dB Peaking, R F = 845 Ω 575 715 MHz G= +1, < 0.1 dB Peaking, R F = 1 kΩ 575 795 MHz Bandwidth for 0.1 dB Flatness N Package G = +2, R F = 750 Ω 85 110 MHz R Package G = +2, R F = 681 Ω 100 125 MHz Slew Rate G = +2, V O = 2 V Step 800 1000 V/ µs G = –1, VO = 2 V Step 960 1200 V/ µs Settling Time to 0.1% G = –1, V O = 2 V Step 10 ns Rise and Fall Time G = +2, V O = 2 V Step, RF = 649 Ω 1.4 ns NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion f C = 5 MHz, VO = 2 V p-p –65 dBc G = +2, RL = 100 Ω Input Voltage Noise f = 10 kHz 2.0 nV/ √Hz Input Current Noise f = 10 kHz, +In 2.0 pA/ √Hz –In 18 pA/ √Hz Differential Gain Error NTSC, G = +2, R L = 150 Ω 0.01 0.025 % Differential Phase Error NTSC, G = +2, R L = 150 Ω 0.025 0.04 Degree Third Order Intercept f = 10 MHz 33 dBm 1 dB Gain Compression f = 10 MHz 14 dBm SFDR f = 5 MHz –66 dB DC PERFORMANCE Input Offset Voltage 2.0 5.5 mV TMIN–TMAX 2.0 9.0 mV Offset Drift 10 µV/°C –Input Bias Current 5.0 25 ±µA TMIN–TMAX 35 ±µA +Input Bias Current 3.0 6.0 ±µA TMIN–TMAX 10 ±µA Open-Loop Transresistance V O = ± 2.5 V 250 900 k Ω TMIN–TMAX 175 k Ω INPUT CHARACTERISTICS Input Resistance +Input 10 M Ω –Input 50 Ω Input Capacitance +Input 1.5 pF Input Common-Mode Voltage Range 3.2 ± V Common-Mode Rejection Ratio Offset Voltage V CM = ± 2.5 V 50 54 dB –Input Current V CM = ± 2.5 V, TMIN–TMAX 0.3 1.0 µA/V +Input Current V CM = ± 2.5 V, TMIN–TMAX 0.2 0.7 µA/V OUTPUT CHARACTERISTICS Output Voltage Swing R L = 150 Ω 2.7 3.1 ± V Output Current R L = 37.5 Ω 50 70 mA Short Circuit Current 85 110 mA POWER SUPPLY Operating Range ± 3.0 ± 6.0 V Quiescent Current T MIN–TMAX 5.0 5.5 mA Power Supply Rejection Ratio +V S = +4 V to +6 V, –VS = –5 V 60 75 dB –VS = – 4 V to –6 V, +V S = +5 V 50 56 dB –Input Current T MIN–TMAX 0.5 2.5 µA/V +Input Current T MIN–TMAX 0.1 0.5 µA/V Specifications subject to change without notice.

conditions for extended periods may affect device reliability. due to a change in the stresses exerted on the die by the package. period can result in device failure. Figure 3. Plot of Maximum Power Dissipation vs. accumulate on the human body and test equipment and can discharge without detection. precautions are recommended to avoid performance degradation or loss of functionality. *Standard Military Drawing Device.

REV. D AD8001 –4– HP8133A PULSE GENERATOR 806/H9024 +VS RL = 100/H9024 50/H9024 VIN 0.1/H9262F 0.001/H9262F AD8001 0.1/H9262F 0.001/H9262F TR/TF = 50ps 806/H9024 VOUT TO TEKTRONIX CSA 404 COMM. SIGNAL ANALYZER S TPC 1. Test Circuit , Gain = +2 TPC 2. 1 V Step Response, G = +2 0.5V 5ns TPC 3. 2 V Step Response, G = +1 5ns400mV TPC 4. 2 V Step Response, G = +2 LeCROY 9210 PULSE GENERATOR 909/H9024 +VS RL = 100/H9024 –VS 50/H9024 VIN 0.1/H9262F 0.001/H9262F AD8001 0.1/H9262F 0.001/H9262F TR/TF = 350ps VOUT TO TEKTRONIX CSA 404 COMM. SIGNAL ANALYZER TPC 5. Test Circuit, Gain = +1 TPC 6. 100 mV Step Response, G = +1 –Typical Performance Characteristics

REV. D AD8001 –5– GAIN – dB –12 10M 100M 1G FREQUENCY – Hz VS = /H115505V RFB = 820/H9024 VS = /H115505V RFB = 1k/H9024 G = +2 RL = 100/H9024 TPC 7. Frequency Response, G = +2 OUTPUT – dB 0.1 –0.9 1M 10M 100M –0.1 –0.2 –0.3 –0.4 –0.5 FREQUENCY – Hz –0.6 –0.7 –0.8 RF = 649/H9024 RF = 698/H9024 RF = 750/H9024 G = +2 RL = 100/H9024 VIN = 50mV TPC 8. 0.1 dB Flatness, R Package (for N Package Add 50 Ω to RF) –50 –80 –110 100k 100M 10M1M10k –90 –100 –70 –60 FREQUENCY – Hz HARMONIC DISTORTION – dBc VOUT = 2V p-p RL = 1k/H9024 G = +2 /H115505V SUPPLIES THIRD HARMONIC SECOND HARMONIC TPC 9. Distortion vs. Frequency, R L = 1 kΩ VALUE OF FEEDBACK RESISTOR (RF) – /H9024 –3dB BANDWIDTH – MHz 1000 1000 600 200 600 400 500 800 900800700 R PACKAGE N PACKAGE VS = /H115505V RL = 100/H9024 G = +2 TPC 10. –3 dB Bandwidth vs. R F –50 –70 –100 100k 100M 10M1M10k –80 –90 –60 FREQUENCY – Hz HARMONIC DISTORTION – dBc VOUT = 2V p-p RL = 100/H9024 G = +2 /H115505V SUPPLIES SECOND HARMONIC THIRD HARMONIC TPC 11. Distortion vs. Frequency, R L = 100 Ω 0.08 0.01 –0.01 0.00 0.00 0.02 0.02 0.04 0.06 100IRE DIFF GAIN – % DIFF PHASE – Degrees –0.02 G = +2 RF = 806/H9024

1 BACK TERMINATED

LOAD (150/H9024)

2 BACK TERMINATED

LOADS (75/H9024)

1 AND 2 BACK TERMINATED

LOADS (150/H9024 AND 75/H9024) TPC 12. Differential Gain and Differential Phase

REV. D AD8001 –6– GAIN – dB –35 100M 1G 3G –10 –15 –20 –25 –30 FREQUENCY – Hz VIN = –26dBm RF = 909/H9024 TPC 13. Frequency Response, G = +1 10M 1G 100M2M –5OUTPUT – dB FREQUENCY – Hz G = +1 RL = 100/H9024 VIN = 50mV RF = 649/H9024 RF = 953/H9024 TPC 14. Flatness, R Package, G = +1 (for N Package Add 100 Ω to RF) –40 –60 –110 100k 100M 10M1M10k –50 –80 –70 –100 –90 DISTORTION – dBc FREQUENCY – Hz G = +1 RL = 1k/H9024 VOUT = 2V p-p SECOND HARMONIC THIRD HARMONIC TPC 15. Distortion vs. Frequency, R L = 1 kΩ 1000 900 500 600 700 1100 800 900 800 700 600 1000 VALUE OF FEEDBACK RESISTOR (RF) – /H9024 –3dB BANDWIDTH – MHz N PACKAGE R PACKAGE VIN = 50mV RL = 100/H9024 G = +1 TPC 16. –3 dB Bandwidth vs. R F, G = +1 FREQUENCY – Hz 10k 100k 1M 10M 100M –40 –70 –100 –80 –90 –60 –50 DISTORTION – dBc RL = 100/H9024 G = +1 VOUT = 2V p-p SECOND HARMONIC THIRD HARMONIC TPC 17. Distortion vs. Frequency, R L = 100 Ω –24 1M 100M 10M –12 –15 FREQUENCY – Hz –27 –18 –21 OUTPUT – dBV RL = 100/H9024 G = +1 TPC 18. Large Signal Frequency Response, G = +1

REV. D AD8001 –7– 1M 10M 100M FREQUENCY – Hz GAIN – dB –25 –20 –15 –10 RF = 470/H9024 G = +100 G = +10 RL = 100/H9024 RF = 1000/H9024 TPC 19. Frequency Response, G = +10, G = +100 3.35 100 2.95 –40–60 3.05 3.15 3.25 806040200–20 OUTPUT SWING – Volts JUNCTION TEMPERATURE – /H11543C 2.75 2.85 2.55 2.65 RL = 50/H9024 VS = /H115505V RL = 150/H9024 VS = /H115505V | –VOUT | | –VOUT | +VOUT +VOUT TPC 20. Output Swing vs. Temperature –60 JUNCTION TEMPERATURE – /H11543C INPUT BIAS CURRENT – /H9262A –40 –20 0 20 40 60 80 100 120 140 +IN –IN TPC 21. Input Bias Current vs. Temperature 2.2 0.4 100 0.8 0.6 –40–60 1.0 1.2 1.4 1.6 1.8 2.0 806040200–20 INPUT OFFSET VOLTAGE – mV JUNCTION TEMPERATURE – /H11543C DEVICE NO. 1 DEVICE NO. 2 DEVICE NO. 3 TPC 22. Input Offset vs. Temperature –60 JUNCTION TEMPERATURE – /H11543C SUPPLY CURRENT – mA 4.4 4.8 5.8 –40 –20 0 20 40 60 80 100 120 140 5.2 5.4 4.6 5.6 5.0 VS = /H115505V TPC 23. Supply Current vs. Temperature 125 100 –40–60 105 100 110 115 120 806040200–20 JUNCTION TEMPERATURE – /H11543C SHORT CIRCUIT CURRENT – mA SOURCE ISC | SINK ISC | TPC 24. Short Circuit Current vs. Temperature

REV. D AD8001 –8– –60 JUNCTION TEMPERATURE – /H11543C TRANSRESISTANCE – k/H9024 –40 –20 0 20 40 60 80 100 120 140 VS = /H115505V RL = 150/H9024 VOUT = /H115502.5V –TZ +TZ TPC 25. Transresistance vs. Temperature 100 10 100 10k 1k FREQUENCY – Hz 100 NOISE VOLTAGE – nV/√Hz NOISE CURRENT – pA/√Hz 100k INVERTING CURRENT VS = /H115505V NONINVERTING CURRENT VS = /H115505V VOLTAGE NOISE VS = /H115505V TPC 26. Noise vs. Frequency –60 JUNCTION TEMPERATURE – /H11543C CMRR – dB –48 –40 –20 0 20 40 60 80 100 120 140 –51 –50 –49 –53 –55 –54 –52 –56 +CMRR –CMRR 2.5V SPAN TPC 27. CMRR vs. Temperature 100k 100M10M1M10k 0.01 0.1 100 FREQUENCY – Hz ROUT – /H9024 G = +2 RF = 909/H9024 TPC 28. Output Resistance vs. Frequency 1M 10M 1G 100M FREQUENCY – Hz OUTPUT – dB G = –1 RL = 100/H9024 VIN = 50mV RF = 576/H9024 RF = 649/H9024 RF = 750/H9024 TPC 29. –3 dB Bandwidth vs. Frequency, G = –1 –60 JUNCTION TEMPERATURE – /H11543C PSRR – dB –52.5 –40 –20 0 20 40 60 80 100 –62.5 –60.0 –57.5 –67.5 –75.0 –72.5 –65.0 –77.5 –70.0 –55.0 +PSRR –PSRR 3V SPAN CURVES ARE FOR WORST- CASE CONDITION WHERE ONE SUPPLY IS VARIED WHILE THE OTHER IS HELD CONSTANT.TPC 30. PSRR vs. Temperature

REV. D AD8001 –9– 300k 100M 10M1M FREQUENCY – Hz –20 –10 –40 –30CMRR – dB 910/H9024 VOUT VIN 150/H9024 150/H9024 910/H9024 51/H9024 62/H9024 –50 TPC 31. CMRR vs. Frequency 1M 10M 1G 100M FREQUENCY – Hz OUTPUT – dB RF = 750/H9024 RF = 649/H9024 RF = 549/H9024 G = –2 RL = 100/H9024 VIN = 50mVrms TPC 32. –3 dB Bandwidth vs. Frequency, G = –2 TPC 33. 100 mV Step Response, G = –1 –20 1M 10M 100M –10 FREQUENCY – Hz PSRR – dB –60 –50 –40 –30 CURVES ARE FOR WORST- CASE CONDITION WHERE ONE SUPPLY IS VARIED WHILE THE OTHER IS HELD CONSTANT. RF = 909/H9024 G = +2 –PSRR +PSRR –PSRR +PSRR TPC 34. PSRR vs. Frequency TPC 35. 2 V Step Response, G = –1 100 100 COUNT PERCENT INPUT OFFSET VOLTAGE – mV

3 WAFER LOTS

COUNT = 895 MEAN = 1.37 STD DEV = 1.13 MIN = –2.45 MAX = +4.69 FREQ DIST CUMULATIVE TPC 36. Input Offset Voltage Distribution

Figure 12. AD8001 Driving a Dual A-to-D Converter consumption while not limiting the performance of the circuit.

near the input pins to reduce stray capacitance. Chip capacitors should be used for supply bypassing (see Figure 13). for fast, large-signal changes at the output. ing input will significantly affect high speed performance. Figure 13. Inverting and Noninverting Configurations for Evaluation Boards

REV. D AD8001 –15– 8-Lead Plastic Dual In-Line Package [PDIP] (N-8) Dimensions shown in inches and (millimeters) SEATING PLANE 0.180 (4.57) MAX 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.060 (1.52) 0.050 (1.27) 0.045 (1.14) 1 4 5 0.295 (7.49) 0.285 (7.24) 0.275 (6.98) 0.100 (2.54) BSC 0.375 (9.53) 0.365 (9.27) 0.355 (9.02) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05) 0.015 (0.38) 0.010 (0.25) 0.008 (0.20) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MO-095AA 0.015 (0.38) MIN 8-Lead Standard Small Outline Package [SOIC] (R-8) Dimensions shown in millimeters and (inches) 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) /H11547 45/H11543 8/H11543 0/H11543 1.75 (0.0688) 1.35 (0.0532) SEATING PLANE 0.25 (0.0098) 0.10 (0.0040) 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) BSC 6.20 (0.2440) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122) COPLANARITY 0.10 CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-012AA OUTLINE DIMENSIONS 8-Lead Ceramic Dual In-Line Package [CERDIP] (Q-8) Dimensions shown in inches and (millimeters) 1 4 0.310 (7.87) 0.220 (5.59)PIN 1 0.005 (0.13) MIN 0.055 (1.40) MAX 0.100 (2.54) BSC 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) SEATING PLANE 0.200 (5.08) MAX 0.405 (10.29) MAX 0.150 (3.81) MIN 0.200 (5.08) 0.125 (3.18) 0.023 (0.58) 0.014 (0.36) 0.070 (1.78) 0.030 (0.76) 0.060 (1.52) 0.015 (0.38) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETERS DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN 5-Lead Small Outline Transistor Package [SOT-23] (RT-5) Dimensions shown in millimeters PIN 1 1.60 BSC 2.80 BSC 1.90 BSC

0.95 BSC

0.22 0.08 10/H11543 5/H11543 0/H11543 0.50 0.30

0.15 MAX SEATING

1.45 MAX

1.30 1.15 0.90

2.90 BSC

0.60 0.45 0.30 COMPLIANT TO JEDEC STANDARDS MO-178AA

REV. D AD8001 –16– C01043–0–7/03(D)

Revision History

7/03—Data Sheet changed from REV. C to REV. D