AD62476P TOSHIBA | Alldatasheet

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TOSHIBA TD62476~479P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62476P, TD62477P, TD62478P, TD62479P 2CH PERIPHERAL AND/ NAND/ OR/ NOR DRIVERS The TD62476P, TD62477P, TD62478P, TD62479P are comprised of two NPN single output stages and control inputs which can gate the outputs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers.

FEATURES

@ Output current (single output) 350mA (Max.) @ High sustaining voltage output 35V (Min.) © Output clamp diodes DIP8-P-300-2.54 @ Inputs compatible with TTL and 5V CMOS Weight : 0.45g (Typ.) @ Standard supply voltage @ Package type-P : DIP-8 pin TD62476P TD62477P. TD62478P TD62479P OUTPUT OUTPUT OUTPUT OUTPUT cw [| Pon ft | Pon Tt | [an [ot | fo To [ on 7 o [To [ or To To [ on To To [orf | po | 1 [ or | o [ 1 | om [ o | i | or | o {| a1 {| on | pi | o [ orf | 1 [ o | of [ 1 | o | or | 1 {| o | on | Pap a fore Pt a ow a a ore a on PIN CONNECTION (TOP VIEW) TD62476P TD62477P TD62478P TD62479P Vcc 12 02 COMMON Vcc 12 02 COMMON Vcc 12 02 COMMON Vcc 12 02 COMMON fe] {7 | fs] [5] fel {7 | fs] [5] fe] {7 | fs] [5] fe] PL fel fs] LI EIT] LI EIT] LT EI ETL] LI EIEIE] Cn 1 O01 GND Gn 1 01 GND Gn 1 01 GND Gn 1 01 GND 961001EBA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and, vulnerability to physical stress. itis the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice. 1998-05-15 1/5

TOSHIBA TD62476~479P EQUIVALENT OF INPUTS AND OUTPUTS Equivalent of inputs Equivalent of outputs Vee *-O COMMON g ! = +0 OUTPUT INpuTO—s + tt ' 5 ar * ‘i i H GND teneee ee GND (Note) The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta =25°C) Supply Voltage input Voltage [vin [05-55 | v_ Output Sustaining Voltage VCE (SUS) -0.5~35 [Output Current | tour | 350 mae Clamp Diode Reverse Voltage Clamp Diode Forward Current Pp (ete) 09 | w Operating Temperature Storage Temperature —55~150 (Note) Delated above 25°C in the proportion of 7.2mW/°C. RECOMMENDED OPERATING CONDITIONS (Ta = - 30~75°C) CHARACTERISTIC SYMBOL CONDITION | win. [ ve. max. | uni | Supply Voltage a Output Sustaining VoKiage | Vee isusy)| —*+| 0 | — | |v | Output Current jour OCT Sireuit_ P= 300 DC 2 Greuits [0 | — | 200 | [input Vonage | Vw TSC«*d A | — [Vee | VI Clamp Diode Forward Current| I |= ———S*d S|) | 300 | ma 1998-05-15 2/5

TOSHIBA TD62476~479P ELECTRICAL CHARACTERISTICS (Ta = 25°C) |TEST| CHARACTERISTIC SYMBOL TEST CONDITION a | rv. faa UNIT cuit] [H" level] Vin [tf oo = 2 | — | Input Vowsge [rirtevel [Vu ft] SS | — | el a Vcc =4.5V, ViH =2.0V ee cona [in ww [> eee [== | | Vec=45V — [lour=100ma_| — | 0.15] 0.30 | Output Voltage }“L” Level | VoL Vin =2.0V lout=200mA | — | 0.28] 045] v Pattee tw | # [vee=ssvivn=ssv | — | — | aa] Input Current [*L" TL | 5 |Vec=5.5V, Viy=0.4V | = |=0.26]-04] IL cc IN Level [= [-0s2]-08 | Clamp Diode Reverse Vcc =4.5V, VR =35V 10 fesmene "| ks fecntevvarasy | = | | | | Clamp Diode Forward vy 7 |Vec=4-5V, Ip =300mA 15] 1.75] v fsrage | ve [7 veers ieszona | — | s| vs] | TORRATEP Winesv_ | — | aa] a] Output |TD62477P Vin =0V [ — | 0.6] 0.85 | off | TD62a7ep | CCH Vin=5V [= [| 9f 14] Supply Vecessv fvinsov = [taf 18 | Current TD62476P ° Vin=5V | = | 38] 55 | output [T6247] 4, | 4 Wiv=ov | — | 36] 53 | TD62479P Vin =0V [— | 36] 63 | SWITCHING CHARACTERISTICS (Ta = 25°C) TEST CHARACTERISTIC SYMBOL |CIR- CONDITION TYP. | MAX. | UNIT cuit] Propagation = ["H" Level] tpn | — Jo _ = | — | 07 | = | Delay Time _[*L" Level [tp | — [ct "PF RL= 1200 [= [ez [= |“ 1998-05-15 3/5

TOSHIBA TD62476~479P TEST CIRCUIT 1. Vin VIL 2. IOH Vcc OPEN Vcc OPEN flour ion YOu “— t | 3. VoL 4. WH. Ich Vcc OPEN Vcc OPEN ‘OPEN “men i . 5. lite lCcH 6. IR Vcc OPEN OPEN te re == ‘OPEN OPEN Ve VIN | A ore 7. Ve Vee ve Kiet OPEN OPEN PRECAUTIONS for USING Utmost care is necessary in the design of the output line, Vcc, COMMON and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. TEST CIRCUIT OF SWITCHING CHARACTERISTIC TEST WAVEFORM 5 10 “ - Vin=3V 1062476P Sng 5¢s Vec=5V OPEN . Vin=3V pedenn-den bg s200 7062479 N ' i L a 10ns ° en en aaa 90% 20% YOH OUTPUT XS 7 10% 10% © Vou 1998-05-15 4/5

TOSHIBA TD62476~479P OUTLINE DRAWING DIP8-P-300-2.54 Unit : mm ut | og ) : : | ya SP D Lr tl Cl co y 1 4 ~ 10.1MAX 0.850.1 | i a 2. WH oH als] 8 StS Waumemel 3 Zz 2 I ote tte a a 2 —s ) 1.240.1 Weight : 0.45g (Typ.) 1998-05-15 5/5