DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

10 V IC Reference

Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2009 Analog Devices, Inc. All rights reserved.

FEATURES

Laser trimmed to high accuracy

10.000 V ±5 mV (L and U models)

Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model) Excellent long-term stability 25 ppm/1000 hrs (noncumulative) −10 V reference capability Low quiescent current: 1.0 mA maximum 10 mA current output capability 3-pin TO-5 package MIL-STD-883 compliant versions available FUNCTIONAL BLOCK DIAGRAM TO-5 BOTTOM VIEW +VS VOUT GND AD581 08014-001 Figure 1. GENERAL DESCRIPTION The AD581 is a 3-pin, temperature compensated, monolithic, band ga p voltage reference that provides a precise 10.00 V output from an unregulated input level ranging from 12 V to 30 V . Laser wafer trimming (LWT) is used to trim both the initial error at +25°C as well as the temperature coefficient, resulting in high precision performance previously available only in expen- sive hybrids or oven regulated modules. The 5 mV initial error tolerance and 5 ppm/°C guaranteed temperature coefficient of the AD581L is available in a monolithic voltage reference. The band gap circuit design used in the AD581 offers several advantages over classical Zener breakdown diode techniques. Most important, no external components are required to achieve full accuracy and significant stability to low power systems. In addition, total supply current to the device, including the output buffer amplifier (which can supply up to 10 mA) is typically 750 μA. The long-term stability of the band gap design is equivalent to selected Zener reference diodes. The AD581 is recommended for use as a reference for 8-, 10- or 12-bit digital-to-analog converters (DACs) that require an external precision reference. The device is also ideal for all types of analog-to-digital converters (ADCs) up to 14-bit accuracy, either successive approximation or integrating designs, and can generally offer better performance than that provided by standard self-contained references. The AD581J, AD581K, and AD581L are specified for operation from 0°C to 70°C; the AD581S, AD581T, and AD581U are specified for the −55°C to +125°C range. All grades are packaged in a hermetically sealed 3-pin TO-5 metal can. PRODUCT HIGHLIGHTS 1. Laser trimming of both initial accuracy and temperature coefficient results in very low errors over temperature without the use of external components. The AD581L has a maximum deviation from 10.000 V of ±7.25 mV from 0°C to 70°C, whereas the AD581U guarantees ±15 mV maximum total error without external trims from −55°C to +125°C. 2. Because the laser trimming is done on the wafer prior to separation into individual chips, the AD581 is extremely valuable to hybrid designers for its ease of use, lack of required external trims, and inherent high performance. 3. The AD581 can also be operated in a 2-pin Zener mode to provide a precision −10 V reference with just one external resistor to the unregulated supply. The performance in this mode is nearly equal to that of the standard 3-pin confi- guration. 4. Advanced circuit design using the band gap concept allows the AD581 to give full performance with an unregulated input voltage down to 13 V . With an external resistor, the device operates with a supply as low as 11.4 V . 5. The AD581 is available in versions compliant with MILSTD-883. Refer to the military datasheet for detailed specifications.

Rev. C | Page 2 of 12 TABLE OF CONTENTS

REVISION HISTORY

4/09—Rev. B to Rev. C Changes to 10 V Reference with Multiplying CMOS DACs

Rev. C | Page 3 of 12 SPECIFICATIONS @ VIN = +15 V and TA = +25°C. Specifications shown in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All minimum and maximum specifications are guaranteed, although only those shown in boldface are tested on all production units. Table 1. Model AD581J AD581K AD581L Units Min Typ Max Min Typ Max Min Typ Max OUTPUT VOLTAGE TOLERANCE (Error from Nominal 10,000 V Output) ±30 ±10 ±5 mV O U T P U T V O L T A G E C H A N G E Maximum Deviation from +25°C ±13.5 ±6.75 ±2.25 mV Value, TMIN to TMAX Temperature Coefficient 30 15 5 ppm/°C L I N E R E G U L A T I O N 15 V ≤ VIN ≤ 30 V 3.0 3.0 3.0 mV 13 V ≤ VIN ≤ 15 V 1.0 1.0 1.0 mV LOAD REGULATION 0 ≤ IOUT ≤ 5 mA 200 500 200 500 200 500 μV/mA TURN-ON SETTLING TIME TO 0.1%1 200 200 200 μs NOISE (0.1 Hz TO 10 Hz) 40 40 40 μV (p-p) LONG-TERM STABILITY 25 25 25 ppm/1000 hr SHORT-CIRCUIT CURRENT 30 30 30 mA OUTPUT CURRENT Source @ +25°C 10 10 10 mA Source TMIN to TMAX 5 5 5 mA Sink TMIN to TMAX 5 5 5 μA TEMPERATURE RANGE Specified 0 70 0 70 0 70 °C Operating −65 +150 −65 +150 −65 +150 °C PACKAGE OPTION2 TO-5 (H-03B) AD581JH AD581KH AD581LH 1 See Figure 7. 2 H indicates the hermetic metal can.

Rev. C | Page 4 of 12 Table 2. Model AD581S AD581T AD581U Units Min Typ Max Min Typ Max Min Typ Max OUTPUT VOLTAGE TOLERANCE (Error from Nominal 10,000 V Output) ±30 ±10 ±5 mV O U T P U T V O L T A G E C H A N G E Maximum Deviation from +25°C ±30 ±15 ±10 mV Value, TMIN to TMAX Temperature Coefficient 30 15 10 ppm/°C L I N E R E G U L A T I O N 15 V ≤ VIN ≤ 30 V 3.0 3.0 3.0 mV 13 V ≤ VIN ≤ 15 V 1.0 1.0 1.0 mV LOAD REGULATION 0 ≤ IOUT ≤ 5 mA 200 500 200 500 200 500 μV/mA TURN-ON SETTLING TIME TO 0.1%1 200 200 200 μs NOISE (0.1 Hz TO 10 Hz) 40 40 40 μV (p-p) LONG-TERM STABILITY 25 25 25 ppm/1000 hr SHORT-CIRCUIT CURRENT 30 30 30 mA OUTPUT CURRENT Source @ +25°C 10 10 10 mA Source TMIN to TMAX 5 5 5 mA Sink TMIN to TMAX 200 200 200 μA Sink −55°C to +85°C 5 5 5 mA TEMPERATURE RANGE Specified −55 +125 −55 +125 −55 +125 °C Operating −65 +150 −65 +150 −65 +150 °C PACKAGE OPTION2 TO-5 (H-03B) AD581SH AD581TH AD581UH 1 See Figure 7. 2 H indicates hermetic metal can.

Rev. C | Page 5 of 12 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Input Voltage 40 V Power Dissipation @ +25°C 600 mW Operating Junction Temperature Range −55°C to +150°C Lead Temperature (Soldering 10 sec) +300°C Thermal Resistance Junction-to-Ambient 150°C/W Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION

approach often results in temperature coefficients of 1%/°C. with compliance voltage down to 4.5 V . Figure 12. A Two-Component Precision Current Limiter (2 mA to 5 mA for operation beyond +85°C). Figure 13. 2-Pin −10 V Reference

10 V REFERENCE WITH MULTIPLYING CMOS DACs

Figure 14. Low Power 10-Bit CMOS DAC Application

10 V reference guarantees a maximum full-scale temperature

Figure 15. AD581 as −10 V Reference for CMOS ADC Figure 16. Precision 12-Bit DAC

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 17. 3-Pin Metal Header Package [TO-5] 1 RoHS compliant model as of Date Code 0713.

Rev. C | Page 12 of 12 NOTES ©2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D08014-0-4/09(C)