AD52010 ESMT | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
Supply voltage range: 2.5 V to 5.5 V Support single -ended or differential analog input Low Quiescent Current Low Output Noise Low shut-down current Short power-on transient time Internal pull-low resistor on shut-down pins Short-circuit protection Over-temperature protection Loudspeaker power within 10% THD+N 1.78W/ch into 8 loudspeaker >3W/ch into 4 loudspeaker Loudspeaker efficiency E-TSSOP-14L package Integrated Feedback Resistor of 300k
Applications
Monitor audio PDA Portable multimedia devices Notebook computer Mobile phone
Description
The AD52010 is a 3.0W stereo, filter -less class-D audio amplifier . Operating with 5.0V loudspeaker driver supply, it can deliver 3.0W output power into 4 loudspeaker within 10% THD+N or 2.4W at 1% THD+N. The AD52010 is a stereo audio amp lifier with high efficiency and suitable for the notebook computer, and portable multimedia device. Functional Block Diagram PWM Generator Loudspeaker Driver - + ~300k ~300k Overload, Voltage & Thermal Protection -wave Generator ~150k VDDL INL+ INL- OUTPL OUTNL SDN Rin RinCin Cin Differential input Gain=300k/Rin VSSR PWM Generator Loudspeaker Driver - + ~300k ~300k INR+ INR- OUTPR OUTNR Rin RinCin Cin Differential input VSSL VDDR
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 2/15 Typical Application Circuit AD52010 Filterless Class-D VDDL INL+ INL- OUTPL OUTNL SDN RinCin VSSL/VSSR CS2 ON OFF 150kΩ1uF 0.1uF RinCin 150kΩ1uF CS1 2.2uF OUTPR OUTNR INR+ INR- RinCin 150kΩ1uF RinCin 150kΩ1uF VDDR CS2 0.1uF CS1 2.2uF Note. Gain=2 V/V
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 3/15 Pin Assignments E-TSSOP-14 OUTPL VSSL INL+ VDDL SDN INL- OUTPR VSSR INR+ VDDR NC INR- AD52010 Top View OUTNROUTNL Order information Product ID Package Packing Comments AD52010-QG14NRR E-TSSOP-14L Tape/Reel 2.5K Units/Reel Green AD52010-QG14NRT E-TSSOP-14L
96 Units / Tube
100 Tubes / Small Box
OUTPL 1 O Positive output for left channel. VSSL 2 G Power ground for left channel. OUTNL 3 O Negative output for left channel. VDDL 4 P Power supply for left channel. INL+ 5 I Positive differential input for left channel. INL- 6 I Negative differential input for left channel. SDN 7 I Shutdown AD52010 (Low active logic). NC 8 NC No internal connected. INR- 9 I Negative differential input for right channel. INR+ 10 I Positive differential input for right channel. VDDR 11 P Power supply for right channel. OUTNR 12 O Negative output for right channel. VSSR 13 G Power ground for right channel. OUTPR 14 O Positive output for right channel. Thermal pad N/A G To connect the package exposed pad to PCB for thermal power dissipation.
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 4/15 Available Package Package Type Device no. θ JA (oC/W) Exposed Thermal Pad E-TSSOP-14L AD52010 38 Yes Note. Θja is measured at room temperature (TA=25℃), natural convection environment test board, which is constructed with a thermal efficient, 4-layers PCB. The measurement is tested using the JEDEC51-5 thermal measurement standard. Marking Information
- E-TSSOP-14L Package Marking Information Line 1：LOGO Line 2：Product No Line 3：Tracking Code Absolute Maximum Ratings SYMBOL PARAMETER MIN MAX UNIT VDD Supply for analog cells & loudspeaker driver -0.3 6.0 V Input pins voltage -0.3 5.5 V TA Operating free-air temperature range -40 85 oC Tstg Storage temperature -65 150 oC TJ Junction operating temperature -40 150 oC Recommended Operating Conditions SYMBOL PARAMETER MIN MAX UNIT VDD Supply for analog cells & loudspeaker driver 2.5 5.5 V VIH High-Level Input Voltage 1.3 - V VIL Low-Level Input Voltage - 0.35 V TJ Junction operating temperature -40 125 ℃ Ta Ambient Operating Temperature -40 85 ℃ PIN1 DOT ESMT AD52010 Tracking Code
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 5/15 General Electrical Characteristics (TA=25℃) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT Iq Operating current VDD=SDN=5V, Output switching 6 mA IPD Supply current during power-down mode VDD=5.5V; SDN=0V <1 Voffset Output offset voltage Input ac grounded, VDD=2.5V ~ 5.5V < 1 5 mV Tsd Junction temperature for driver shutdown 165 oC Thys Temperature hysteresis for recovery from shutdown 20 oC fsw Switching rate of loudspeakers driver 250 300 350 kHz AV Gain inR k270 inR k300 inR k330 V/V Ton Turn-on time VDD = 3.6 V 1.7 4 msec RSC Loudspeaker short-circuit detect resistance VDD = 5.0 V 2.8 3.2 Ohm
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 6/15 Electrical Characteristics and Specifications for Loudspeaker Gain= 2 V/V, Load=8,fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT PO RMS Output Power VDD=5.0V THD+N = 10 % 1.7 W THD+N = 1 % 1.4 W VDD=3.6V THD+N = 10 % 0.90 W THD+N = 1 % 0.73 W VDD=2.5V THD+N = 10 % 0.43 W THD+N = 1 % 0.35 W THD+N Total Harmonic Distortion plus Noise VDD=5.0V, Po=1.0W 0.04 % VDD=3.6V, Po=0.5W 0.04 % VDD=2.5V, Po=0.2W 0.05 % SNR Signal to Noise Ratio VDD=5.0V, Po=1.0W 98 dB X-talk Channel Separation PO=1W, fIN=1kHz >90 dB PSRR Power Supply Rejection Ratio VDD=3.6V, Vripple=200mVpp Inputs ac grounded with Ci=2F f=217 Hz 74 dB CMRR Common-Mode Rejection Ratio VDD=3.6V, VIC=1Vpp, f=217Hz 66 dB Vn Output integrated noise (A-weighted) VDD=3.6V fin=20Hz ~ 20kHz 23 V Efficiency VDD=5V, THD+N=10% 90 %
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 7/15 Gain= 2 V/V, Load=4fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT PO RMS Output Power VDD=5.0V THD+N = 10 % 3.0 W THD+N = 1 % 2.4 W VDD=3.6V THD+N = 10 % 1.5 W THD+N = 1 % 1.3 W VDD=2.5V THD+N = 10 % 0.72 W THD+N = 1 % 0.58 W THD+N Total Harmonic Distortion plus Noise VDD=5.0V, Po=2.0W 0.04 % VDD=3.6V, Po=1.0W 0.04 % VDD=2.5V, Po=0.5W 0.08 % SNR Signal to Noise Ratio VDD=5.0V, Po=1.8W 98 dB X-talk Channel Separation PO=1W, fIN=1kHz >90 dB PSRR Power Supply Rejection Ratio VDD=3.6V, Vripple=200mVpp Inputs ac grounded with Ci=2F f=217 Hz 77 dB CMRR Common-Mode Rejection Ratio VDD=3.6V, VIC=1Vpp, f=217Hz 66 dB Vn Output integrated noise (A-weighted) VDD=3.6V fin=20Hz ~ 20kHz 22 V Efficiency VDD=5.0V, THD+N=10% 82 %
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 8/15 Typical Characteristics (Gain= 2 V/V, unless otherwise noted) THD+N vs. Output Power THD+N vs. Output Power 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10m 20m 50m 100m 200m 500m Output Power (W) THD+N (%) VDD=5.0V RL=8Ω Lch Rch 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10m 520m 50m 100m 200m 500m 1 2 Output Power (W) THD+N (%) VDD=5.0V RL=4Ω Lch Rch THD+N vs. Output Power THD+N vs. Output Power 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10m 20m 50m 100m 200m 500m Output Power (W) THD+N (%) VDD=5.0V VDD=3.6V VDD=2.5V fin=1KHz RL=8Ω 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10m 20m 50m 100m 200m 500m Output Power (W) THD+N (%) VDD=5.0V VDD=3.6V VDD=2.5V fin=1KHz RL=4Ω THD+N vs. Frequency THD+N vs. Output Power 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Frequency (Hz) THD+N (%) PO=1W PO=0.5W VDD=5.0V RL=8Ω 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Frequency (Hz) THD+N (%) PO=0.5W PO=0.25W VDD=3.6V RL=8Ω
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 9/15 Typical Characteristics (Gain= 2 V/V, unless otherwise noted) THD+N vs. Frequency THD+N vs. Frequency 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Frequency (Hz) THD+N (%) PO=0.2W PO=0.1W VDD=2.5V RL=8Ω 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20k 100 200 500 10k Frequency (Hz) PO=250mW RL=4Ω THD+N (%) VDD=3.6V VDD=2.5V VDD=5.0V PSRR vs. Frequency PSRR vs. Frequency -120 -20 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) PSRR (dB) VDD=3.6V VDD=5.0V RL=8Ω Input AC GND -120 -20 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) PSRR (dB) VDD=3.6V VDD=5.0V RL=4Ω Input AC GND CMRR vs. Frequency CMRR vs. Frequency -120 -20 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) CMRR (dB) VDD=3.6V RL=8Ω -120 -20 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) CMRR (dB) VDD=3.6V RL=4Ω
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 10/15 Typical Characteristics (Gain= 2 V/V, unless otherwise noted) Crosstalk vs. Frequency Crosstalk vs. Frequency -160 -20 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) Crosstalk (dB) VDD=5V Po=1W RL=8Ω Lch to Rch Rch to Lch -140 -20 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 20k 100 200 500 10k Frequency (Hz) Crosstalk (dB) VDD=5V Po=1W RL=4Ω Lch to Rch Rch to Lch Efficiency vs. Output Power Efficiency vs. Output Power 100 0 1 2 3 4 5 Output Power (W) Efficiency (%) RL=8Ω fin=1KHz VDD=5V 100 0 2 4 6 8 Output Power (W) Efficiency (%) RL=4Ω fin=1KHz VDD=5V
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 11/15 Operation Descriptions Self-protection circuits (Typical values are used below.) AD52010 has built-in over-temperature, overload and under-voltage detectors. (i) If the internal junction temperature is higher than 165 oC, the outputs of loudspeaker drivers will be disabled and connected to ground and the temperature hysteresis for AD52010 to return to normal operation is about 20oC. The variation of protected temperature is around 10%. (ii) To protect loudspeaker drivers from current damage when the wires connected to loudspeakers are shorted to one another or shorted to GND, circuits for the detection of output loading are built in the AD52010. For normal operation, loudspeaker resistance is larger than 3.2 is required. Otherwise , overload detectors may activate. Once overload detector is active, loudspeaker drivers will be disabled and at low state. AD52010 will be recovery from overload fault by pulling SD# down to low and back to high after removing the short. Once the lines connected to loudspeakers are shorted to VDD, AD52010 will be burnt. (iii) When the VDD voltage is lower than 2.3V, AD52010 will disable and loudspeaker drivers are at low state, cease AD52010 beside voltage detector circuit. When VDD becomes larger than 2.4V, AD52010 will return to normal operation. Anti-pop design AD52010 is with anti-pop design. Annoying pop sounds during initial power on and power down/up are suppressed. When one of the operations mentioned above is applied, AD52010 will internally generate appropriate control signals to suppress pop sounds. Application Circuit Information Input resistors (Rin) and input capacitors (Cin) The total gain of the audio amplifier (AD52010) is set by input resistor (R in) according to the following equation (a). The performance at low frequency (bass) is affected by the corner frequency (f c) of the high -pass filter compo sed of input resistors (Rin) and input capacitors (Cin), determined in equation (b). aVV R kGain in bHzCRf inin c 2 For differential audio signal application, the input capacitors (Cin), for DC decoupling, are not required. When single-ended audio source is used, the input capacitors (Cin) are required.
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 12/15 Suggested application circuit for single-ended input AD52010 Filterless Class-D VDDL INL+ INL- OUTPL OUTNL SDN RinCin VSSL/VSSR CS2 ON OFF 150kΩ1uF 0.1uF RinCin 150kΩ1uF CS1 2.2uF OUTPR OUTNR INR+ INR- RinCin 150kΩ1uF RinCin 150kΩ1uF VDDR CS2 0.1uF CS1 2.2uF Single-ended input Single-ended input Note. Gain=2 V/V
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 13/15 Package Outline Dimensions TSSOP-14(E) (173 mil) C DETAIL A DETAIL A L TOP VIEW 1 7 814 E D 7 1 148 BOTTOM VIEW b e SIDE VIEW A Min Max A -- 1.20 Min Max A1 0.05 0.15 D1 1.70 3.25 b 0.19 0.30 E2 1.50 3.15 D 4.90 5.10 E 4.30 4.50 e L 0.5 0.75 Symbol Dimension in mm
6.40 BSC
0.65 BSC
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 14/15
Revision History
0.1 2014.07.22 Preliminary version. 1.0 2019.01.22 Remove “Preliminary” and reversion to 1.0 and add order information & add marking information & add Ta information & update POD 1.1 2019.06.03 Update description. 1.2 2021.11.16 Update functional block diagram.
Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 15/15 Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or spec ification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inher ently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.