AD161 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscSiliconNPNPowerTransistor AD161
DESCRIPTION
- WideArea ofSafeOperation
- DCCurrentGain- :hFE=50-350@IC=0.5A
- Collector-EmitterSaturation Voltage- :VCE(sat)=0.7V(Max)@IC=3A
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designed forgeneral-purpose power switchand amplifier, consumerand industrialapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.52 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 32 V VCEO Collector-EmitterVoltage 20 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 3 A PC CollectorPowerDissipation @TC=25℃ 4 W TJ JunctionTemperature 90 ℃ Tstg StorageTemperature -55~200 ℃
iscwebsite：www.iscsemi.cn 2 iscSiliconNPNPowerTransistor AD161 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=100mA;IB=0 50 V V(BR)CBO Collector-BaseBreakdownVoltage IC=1mA;IE=0 50 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=1mA;IC=0 6 V VCE(sat) Collector-EmitterSaturationVoltage IC=3A;IB=0.3A 0.7 V VBE(sat) Base-EmitterSaturationVoltage IC=3A;IB=0.3A 1.2 V ICEO CollectorCutoffCurrent VCE=50V;IB=0 0.1 mA ICBO CollectorCutoffCurrent VCB=32V;IE=0 0.5 μA IEBO EmitterCutoffCurrent VEB=7.0V;IC=0 10 μA hFE DCCurrentGain IC=0.5A;VCE=1V 50 350