AD149 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscSiliconPNPPowerTransistor AD149
DESCRIPTION
- WideArea ofSafeOperation
- DCCurrentGain- :hFE=30-100@IC=-1A
- Collector-EmitterSaturation Voltage- :VCE(sat)=-0.7V(Max)@IC=-3A
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designed forgeneral-purpose power switchand amplifier, consumerand industrialapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.52 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -50 V VCEO Collector-EmitterVoltage -50 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -3.5 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperature -55~200 ℃
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscSiliconPNPPowerTransistor AD149 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-100mA;IB=0 -50 V V(BR)CBO Collector-BaseBreakdownVoltage IC=-1mA;IE=0 -50 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-1mA;IC=0 -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-3A;IB=-0.3A -0.7 V VBE(sat) Base-EmitterSaturationVoltage IC=-3A;IB=-0.3A -1.2 V ICEO CollectorCutoffCurrent VCE=-50V;IB=0 -0.1 mA ICBO CollectorCutoffCurrent VCB=-50V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-7.0V;IC=0 -10 μA hFE DCCurrentGain IC=-1A;VCE=-5V 30 150