AIDW10S65C5 INFINEON | Alldatasheet
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Ordering Code VDC,max 650 V Pin 2, case Cathode Marking IF; TC< 134 °C 10 A Pin 3 Anode V3.0 26.11.2018 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Page 1 of 11
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Table of Contents Table of Contents Datasheet Page 2 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Maximum Ratings
1 Maximum Ratings
Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting Torque (M3 and M4 screws) 70 Ncm ESD kVHuman body model, R= 1.5 kΩ, C = 100 pF 8 Charged device model 2 Operating temperature Tj -40…175 °C Storage temperature Tstg -55…150 °C 10.5 Diode dv/dt ruggedness VR=0...480V dv/dt 100 V/ns Power dissipation TC = 25°C Ptot 65 W Non-repetitive peak forward current TC= 25°C, tp=10μs IF,max 431 A i²t value ∫i2 dt A2sTC= 25°C, tp=10ms 16.6 TC= 150°C, tp=10ms Surge non-repetitive forward current, sine halfwave IF,SM ATC= 25°C, tp=10ms 58 TC= 150°C, tp=10ms 46 Repetitive peak reverse voltage VRRM 650 V Continuous forward current for RthJC,max IF 10 ATC = 134 °C, D=1 Table 1 Parameter Symbol Value Unit Datasheet Page 3 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Thermal Characteristics
2 Thermal Characteristics
Min. Typ. Max. - 1.8 2.3 K/W Thermal resistance, junction-ambient2 - - 62 K/W Thermal resistance, junction–case2 RthJC RthJA Table 2 Parameter Symbol Values Unit Note/Test condition Datasheet Page 4 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3
Electrical Characteristics
3 Electrical Characteristics
Min. Typ. Max. 650 - - - 1.5 1.7 - 1.8 2.1 - 2 60 VR = 650 V, Tj = 25 °C - 12 - VR = 650 V, Tj = 150 °C Dynamic Characteristics at Tj=25°C unless noted otherwise Min. Typ. Max. - 15 - nC - 303 - - 40 - - 39 - 1 The parameter is not subject to production test- verified by design/characterization. 3 Only the value at 25°C is subject to production test. The value at 150°C is only verified by design/characterization. Footnotes: Total capacitive charge QC VR = 400 V, di/dt = 200 A/µs, IF ≤ IF,MAX, Tj = 150 °C Total capacitance C pF VR = 1 V, f = 1 MHz VR = 300 V, f = 1 MHz VR = 600 V, f = 1 MHz Table 4 Parameter Symbol Values Unit Note/Test condition Reverse current IR µA DC blocking voltage VDC V Tj = 25°C, IR = 0.06 mA Diode forward voltage3 VF Tj = 25°C, IF = 10 A Tj = 150°C, IF = 10 A Table 3 Parameter Symbol Values Unit Note/Test condition Rth,JC defined as per JESD-51-14. Rth,JA defined as per JESD-51-2. Datasheet Page 5 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Electrical Characteristics Diagrams
4 Electrical Characteristics Diagrams
(LEFT) Power dissipation; P tot= f(TC); RthJC,max (RIGHT) Diode forward current; I F= f(TC); Tj≤ 175 °C; R thJC,max ; parameter: D=duty cycle (LEFT) Typical forward characteristic; I F= f(VF); tP=200 μs; parameter:T j (RIGHT) Typical forward characteristics in surge current; I F= f(VF); tP=200 μs; parameter:T j Datasheet Page 6 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Package Outlines
5 Package Outlines
Figure 6 Package outline of PG-TO247-3-41 leaded (Dimensions in mm) Datasheet Page 9 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3
Revision History
V3.0 26.11.2018 1st release of Data Sheet Version Description of changes Datasheet Page 10 of 11 V3.0 26.11.2018
CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Document reference In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Edition 2017-07-07 Published by Infineon Technologies AG
81726 München, Germany
© 2017 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non- infringement of intellectual property rights of any third party. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com) . WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Trademarks All referenced product or service names and trademarks are the property of their respective owners. IMPORTANT NOTICE Datasheet Page 11 of 11 V3.0 26.11.2018