ACT36X | DigiCamel IC Datasheet

Online Datasheet

Read ACT36X online.

ACT36X ACTIVE-SEMI | Alldatasheet

Document overview

Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
PDF pages: 22

Technical content

Rev 2.5 Oct 2012 www.active-semi.com AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Innovative Green Power Solutions Innovative Green Power Solutions

For information regarding Active-Semi products, sales and authorized distributors, please contact: sales@active-semi.com. PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History 2012-Oct– 19 Rev 2.5 Page 12~13 Update SCH and Transformer ( Lp and NP/NS/NAUX ) Update BOM List( C1,C2,R5,R6,R9,R10 ) Update SCH and Transformer ( Lp and NP/NS/NAUX ) Update BOM List( R5,R6,R9,R10 ) Cover page Change title Page 14~15

c: PSR is Primary-Side Regulation For information regarding Active-Semi products, sales and authorized distributors, please contact: sales@active-semi.com.

Chargers for Cell Phones, PDAs, MP3, PMPs, DSCs, and Other Portable Devices
RCC Adapter or Linear Adapter Replacements
Standby and Auxiliary Supplies
White LED Lighting

Applications

AC/DC Converters – ActivePSRTM Part Number Output Power Technology Standby Power Consumption Switching Frequency Package ACT361 6.0W PSRc < 150mW @ VAC = 230V Adjustable to 40kHz SOT23-6 ACT364 6.5W PSRc < 150mW @ VAC = 230V Adjustable to 80kHz SOT23-6 ACT365 12.5W PSRc < 150mW @ VAC = 230V Adjustable to 80kHz SOP8 ACT366 14.5 W PSRc < 150mW @ VAC = 230V Adjustable to 80kHz SOP8-EP ACT334 6.5W PSRc < 30mW @ VAC = 230V Adjustable to 80kHz SOT23-6 ACT336 7.0W PSRc < 30mW @ VAC = 230V Adjustable to 80kHz SOP8 ACT337 12.5W PSRc < 30mW @ VAC = 230V Adjustable to 80kHz SOP8 PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions Table of Contents Active-Semi (Shanghai) Office Contact Information Fast Technical Support Contact Person: Peter (Director of Product Line) Tel: (86-21) 5108 2797#865; Mobile Phone: 135 8558 2743; E-mail box: Peterhuang@active-semi.com. Address: RM1202,Sunplus Building,No.1077 Zuchongzhi Road, Zhangjiang High Tech Park, Shanghai 201203, China

-5- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT361 5V/1000MA CHARGER Bill of Materials Transformer Specitication Build up Note:1.SH1,SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EE16) Electrical specifications Item Description Condition Limits

1 Electrical

50Hz, 1 minute, from primary and secondary 3000Vac

2 P1 Inductance Inductance between pins 5 and 3 at

1Vac & 1kHz 1.7mH± 7%

3 P1 Leakage

Inductance between pins 3 and 5 with pins 1-2 and 6-8 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT361-01 85-264Vac 4.75-5.25V 1000-1268mA Wind- ing Terminal Turns Wire Insulation Start Fin- ish Type Size*QTY Layer Thick/Wide Lay er 3 --> 47 2UEW 0.15Φ*1 1 0.025*8.5W --> 5 46 2UEW 0.15Φ*1 1 0.025*8.5W SH1 2 NC 8 2UEW 0.12Φ*1 1 0.025*8.5W 2 S1 8 6 10 TEX-E 0.50Φ*1 1 0.025*8.5W 2 4 2 14 2UEW 0.15Φ*2 1 0.025*8.5W 1 4 SH2 Core 5 1 Conductor 0.15Φ*1 1 0.025*10 2 REF DESCRIPTION MFTR C1,C2 Capacitor, Electrolytic, 6.8µF/400V, 10x12mm KSC C3 Capacitor, Ceramic,1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,10µF/50V,5x11mm KSC C5 Capacitor, Electrolytic, 680µF/10V, 8x12mm KSC C6 Capacitor, Electrolytic, 220µF/10V, 5x11mm KSC C7 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, schottky, 40V/2A, SB210, DO-15 Good-Ark L1 Axial Inductor, 2.2mH, 0410,Dip Amode Tech L2 Axial Inductor, 220µH, 0410,Dip Amode Tech Q2 Transistor, HFE 20-25, NPN,D13003X,TO-126 Huawei PCB1 PCB, L*W*T=58x31.2x1.6mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10Ω ,KNP, 5% TY-OHM R1 Chip Resistor, 750kΩ, 1206, 5% TY-OHM R2,R3 Chip Resistor, 5.1MΩ, 1206, 5% TY-OHM R4 Chip Resistor, 0.787Ω, 1206,1% TY-OHM R5 Chip Resistor, 22Ω, 0805, 5% TY-OHM R6 Chip Resistor, 22Ω, 0603, 5% TY-OHM R7 Chip Resistor, 162kΩ, 0805, 5% TY-OHM R8 Chip Resistor, 54.9kΩ, 0805,1% TY-OHM R9 Chip Resistor, 9.76kΩ, 0805, 1% TY-OHM R11 Chip Resistor, 1.2kΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14,R15 Chip Resistor, 2.2kΩ ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.7mH, EE16 U1 IC, ACT361,SOT23-6 Active-Semi. USB USB, Rev:A NC Core(SH2) Pin1 Reverse

-7- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT364 5V/1000MA CHARGER Bill of Materials Transformer Specitication Build up Note:1.SH1,SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EPC13) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac

2 P1 Inductance Inductance between pins 1 and 4 at

1Vac & 1kHz 1.75mH± 7% Inductance between pins 1 and 4 with pins 2-3 and 6-10 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT364_00_1 85-264Vac 4.75-5.25V 1000-1300mA Wind- ing Terminal Turns Wire Insulation Start Fin- ish Type Size*QTY Layer Thick/Wide Lay er 4 --> 49 2UEW 0.12Φ*1 1 0.025*8.5W --> 1 49 2UEW 0.12Φ*1 1 0.025*8.5W SH1 2 NC 49 2UEW 0.12Φ*1 1 0.025*8.5W P2 2 3 24 2UEW 0.12Φ*1 1 0.025*8.5W 1 S1 10 6 9 TEX-E 0.40Φ*1 1 0.025*8.5W 2 SH2 2 Core 1 3 REF DESCRIPTION MFTR C1 Capacitor, Electrolytic, 4.7µF/400V,8 ×12mm Koshin C2 Capacitor, Electrolytic, 6.8µF/400V,8 ×12mm Koshin C3 Capacitor, Ceramic,1000pF/500V,1206,SMD POE C4 Capacitor, Ceramic,4.7uF/35V,0805,SMD POE C5,C6 Capacitor, Solid, 330µF/6.3V, 6.3 ×9mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE BD1 Bridge,B6S,600V/0.5A,MDI,SMD PANJIT D5,D6 Diode, Ultra Fast, RS1M,1000V/1.0A, SMA Good-Ark D8 Diode, Schottky, 40V/3A, SK34, SMB Good-Ark L1 Axial Inductor, 1.5mH, 0410, DIP Amode Tech Q1 Transistor, NPN, 700V,1.5A, D13003, TO-251AB Huawei PCB1 PCB, L*W*T=42x28 x1.0mm, FR-4,Rev:ACT364_00_1 Jintong FR1 Fusible Resistor, 1W, 10Ω, 5% TY-OHM R1,R4 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 470Ω, 0805, 5% TY-OHM R3 Chip Resistor, 750k Ω, 0805, 5% TY-OHM R5 Chip Resistor, 61k Ω, 0805, 1% TY-OHM R6 Chip Resistor, 11. 8kΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1MΩ, 0805, 5% TY-OHM R9 Chip Resistor, 1.07Ω, 1206, 1% TY-OHM R10 Chip Resistor, 162k, 0805, 5% TY-OHM R11 Chip Resistor, 1.1k, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Bead, GZ2012D121,0805 KC T1 Transformer, LP = 1.75mH±7%, EPC13 U1 IC, ACT364US-T, SOT23-6 Active-Semi 0.00 20.00 40.00 60.00 80.00 100.00 120.00 90 115 230 264 Standy Power (W) Input Voltage (VAC) Standby Power Vs Input Voltage 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 Output Voltage(V) Output Current(mA) V-I Characteristic Vs Vin(25℃) 90V 115V 230V 264V High limit Low limit

-9- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT365 5V/2100MA CHARGER Bill of Materials REF DESCRIPTION MFTR C1, C2 Capacitor, Electrolytic, 10µF/400V, 10×16mm KSC C3 Capacitor, Ceramic,1000pF/500V,1206,SMD POE C4 Capacitor, Ceramic, 10µF/35V,1206,SMD KSC C5 Capacitor, Electrolytic, 1000µF/6.3V, 8 ×16mm KSC C6 Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D5 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D6 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D8 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes L1 Choke Coil, 1.5mH, ¢6x8mm, DIP Amode Q1 Transistor, NPN, 700V,D13005,TO-126 Huawei F1 Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube walter R1 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 300k,1206, 5% TY-OHM R3 Chip Resistor, 390Ω,1206, 5% TY-OHM R4 Chip Resistor, 15Ω, 0805, 5% TY-OHM R5 Chip Resistor, 80.6k,0805, 1% TY-OHM R6 Chip Resistor,19.1k,0805, 1% TY-OHM R7 Chip Resistor, 10MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 0.65Ω,1206, 1% TY-OHM R10 Chip Resistor, 162k,0805, 5% TY-OHM R11 Chip Resistor, 1.1k, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.25mH±7%, EPC17 USB Double-layer USB Rev:A U1 IC, ACT365SH-T, SOP-8 ACT S/H1 AL HeatSink, LxWxH=7.5x17x2.0mm PCB1 PCB, L*W*T=40x28.1x1.6mm,Cem-1,Rev:A Jintong Transformer Specitication Build up Wind- ing Terminal Turns Wire Insulation Start Finish Type Size*QTY Layer Thick/Wide Layer P1 2 3 74 2UEW 0.22Φ*1 1 0.025*8.5W 2 SH1 --> 4 0.9 Copper 0.7mm 1 0.025*8.5W 2 S1 B A 8 TEX-E 0.75Φ*1 1 0.025*8.5W 2 P2 5 4 18 2UEW 0.14¢*3 1 0.025*8.5W 2 P3 3 1 36 2UEW 0.22¢*1 1 0.025*8.5W 2 SH2 4 core 3 Copper wire 0.15Φ*1 1 0.025*8.5W 5 Note:1.SH1,SH2 are shielding; P1, P2 are primary and S1 is secondary.(Bobbin:EPC17) Electrical Specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secon- dary 3000Vac

2 P1 Inductance Inductance between pins 1 and 3 at 1Vac

& 1kHz 1.25mH± 7% Inductance between pins 1 and 3 with pins 4-5 and A-B shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY EVALUATION KITS Vin Vo Io ACT365-01 85-264Vac 4.75-5.25V >2100mA A SH1 B NC Pin4(SH2) Reverse Core

-11- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT366 12V/1000MA CHARGER Bill of Materials REF DESCRIPTION MFTR C1 Capacitor, Electrolytic, 10µF/400V, 10 × 12mm KSC C2 Capacitor, Electrolytic, 15µF/400V, 10 × 12mm KSC C3 Capacitor, Ceramic,1000pF/500V,1206, SMD POE C4 Capacitor, Electrolytic, 47µF/35V, 5 × 11mm KSC C5 Capacitor, Electrolytic, 330µF/25V, 8 × 12mm? KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge,Rectifier,1000V/1A,MB10M, SMD D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 Diode, Switching,75V/150mA,LL4148, MICRO-MELF Good-Ark D8 Diode, Schottky, 60V/5A, SB560, DO-201AD PANJIT L1 Common choke mode, UU9.8,20mH, DIP Q1 Transistor, NPN, 700V,1.5A, D13003, TO-220 Huawei F1 Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube walter R1 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 300k, 1206, 5% TY-OHM R3 Chip Resistor, 0Ω, 1206, 5% TY-OHM R4 Chip Resistor, 10Ω, 0805, 5% TY-OHM R5 Chip Resistor, 59k, 0805, 1% TY-OHM R6 Chip Resistor, 9.09k, 0805, 1% TY-OHM R7 Chip Resistor, 2.7MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 0.604Ω, 1206, 1% TY-OHM R10 Chip Resistor, 330k, 0805, 5% TY-OHM R11 Chip Resistor, 5K, 0805, 5% TY-OHM R12,R14 Chip Resistor, 2.2K, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.2mH±7%, EE20 U1 IC, ACT366YH-T, SOP8-EP Active-Semi S/H1 AL HeatSink, LxWxH=15x23x2.0mm PCB1 PCB, L*W*T=45.8x33.3x1.6mm,Cem-1,Rev:A Jintong Transformer Specitication Build up Wind- ing Terminal Turns Wire Insulation Start Finish Type Size*QTY Layer Thick/Wide Laye r 5 --> 32 2UEW 0.25Φ*1 1 0.025*8.5W --> 3 32 2UEW 0.25Φ*1 1 0.025*8.5W 2 SH1 --> 1 0.9 Copper 0.7mm 1 0.025*8.5W 2 S1 B A 9 TEX-E 0.4Φ*2 1 0.025*8.5W 2 P2 2 1 12 2UEW 0.25Φ*3 1 0.025*8.5W 2 P1 3 4 32 2UEW 0.25Φ*1 1 0.025*8.5W 2 SH2 1 core 3 Con- ductor 0.25Φ*1 1 0.025*10 5 Note:1.SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EE20) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac

2 P1 Inductance Inductance between pins 4 and 5 at

1Vac & 1kHz 1.2mH± 7% Inductance between pins 4 and 5 with pins 2-1 and A-B shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT366-01 85-264Vac 11.4-12.6V >1000mA SH1

-13- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT334 5V/700MA CHARGER Bill of Materials REF DESCRIPTION MFTR C1, C2 Capacitor, Electrolytic, 4.7µF/400V, 8 × 12mm KSC C3 Capacitor, Ceramic,220pF/500V,1206,SMD POE C4 Capacitor, Ceramic,, 4.7µF/35V, 1206, SMD POE C5,C6 Capacitor, Electrolytic, 220µF/10V, 6.3 × 8mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE D1-D5 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D6 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, Schottky, 40V/3A, SB340, SMA Good-Ark L1 Axial Inductor, 1.5mH, 0410, DIP Amode Tech Q1 Transistor, NPN, 700V,1.5A, D13003, TO-251AB Huawei FR1 Fusible Resistor, 1W, 10Ω, 5% TY-OHM R1,R4 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 1.0M, 1206, 5% TY-OHM R3 Chip Resistor, 470Ω, 1206, 5% TY-OHM R5 Chip Resistor, 43.4K, 0805, 1% TY-OHM R6 Chip Resistor, 8.25K, 0805, 1% TY-OHM R7,R8 Chip Resistor, 15MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 1.0Ω, 1206, 1% TY-OHM R10 Chip Resistor, 80.6K, 0805, 5% TY-OHM R11 Chip Resistor, 3.9K, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.5mH±7%, EPC13 5+5pin U1 IC, ACT334US-T, SOT23-6 Active-Semi PCB1 PCB, L*W*T=41.3x28.1x1.6mm,Cem-1,Rev:A Jintong Transformer Specitication Build up Note:1.SH1,SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EPC13) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac 1Vac & 1kHz 1.5mH± 7% Inductance between pins 1 and 4 with pins 2-3 and 6-10 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT334-01 85-264Vac 4.75-5.25V 700-900mA Wind- ing Terminal Turns Wire Insulation Start Fin- ish Type Size*QTY Layer Thick/Wide Lay er 4 --> 49 2UEW 0.12Φ*1 1 0.025*8.5W --> 1 49 2UEW 0.12Φ*1 1 0.025*8.5W SH1 2 NC 49 2UEW 0.12Φ*1 1 0.025*8.5W P2 2 3 24 2UEW 0.12Φ*1 1 0.025*8.5W 1 S1 10 6 9 TEX-E 0.40Φ*1 1 0.025*8.5W 2 SH2 2 Core 1 3

-15- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT334 5V/1000MA CHARGER Bill of Materials REF DESCRIPTION MFTR C1, C2 Capacitor, Electrolytic, 6.8µF/400V, 8 × 12mm KSC C3 Capacitor, Ceramic,220pF/500V,1206,SMD POE C4 Capacitor, Ceramic,, 4.7µF/35V, 1206, SMD POE C5,C6 Capacitor, Electrolytic, 330µF/10V, 6.3 × 8mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE D1-D5 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D6 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA Good-Ark D8 Diode, Schottky, 40V/3A, SB340, SMA Good-Ark L1 Axial Inductor, 1.5mH, 0410, DIP Amode Tech Q1 Transistor, NPN, 700V,1.5A, D13003, TO-251AB Huawei FR1 Fusible Resistor, 1W, 10Ω, 5% TY-OHM R1,R4 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 1.0MΩ, 1206, 5% TY-OHM R3 Chip Resistor, 470Ω, 1206, 5% TY-OHM R5 Chip Resistor, 60.4kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 11.3kΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 15MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 1.0Ω, 1206, 1% TY-OHM R10 Chip Resistor, 80.6kΩ, 0805, 5% TY-OHM R11 Chip Resistor, 3.9kΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.55mH±7%, EPC13 5+5pin U1 IC, ACT334US-T, SOT23-6 Active-Semi PCB1 PCB, L*W*T=41.3x28.1x1.6mm,Cem-1,Rev:A Jintong Transformer Specitication Build up Note:1.SH1,SH2 are shielding; P1 & P2 are primary and S1 is secondary.(Bobbin:EPC13) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac 1Vac & 1kHz 1.55mH± 7% Inductance between pins 1 and 4 with pins 2-3 and 6-10 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY CC/CV CURVE EVALUATION KITS Vin Vo Io ACT334-02 85-264Vac 4.75-5.25V 1000-1200mA 66.00% 68.00% 70.00% 72.00% 110 135 160 185 210 235 Efficiency Vin Average Efficiency Vs Vin Efficiency Vs Vin 115V,230" Wind- ing Terminal Turns Wire Insulation Start Fin- ish Type Size*QTY Layer Thick/Wide Lay er 4 --> 49 2UEW 0.12Φ*1 1 0.025*8.5W --> 1 49 2UEW 0.12Φ*1 1 0.025*8.5W SH1 2 NC 49 2UEW 0.12Φ*1 1 0.025*8.5W P2 2 3 24 2UEW 0.12Φ*1 1 0.025*8.5W 1 S1 10 6 9 TEX-E 0.40Φ*1 1 0.025*8.5W 2 SH2 2 Core 1 3

-17- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT336 5V/2100MA CHARGER Bill of Materials Transformer Specitication Build up Note:1.SH1 and SH2 are shielding; P1 ,P2 and P3 are primary and S1 is secondary.(Bobbin:EFD15) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac

2 P1 Inductance Inductance between pins 2 and 4 at

1Vac & 1kHz 1.53mH± 7% Inductance between pins 1 and 3 with pins 2-4 and A-B shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY EVALUATION KITS Vin Vo Io ACT336-01 85-264Vac 4.75-5.25V >1200mA REF DESCRIPTION MFTR C1,C2 Capacitor, Electrolytic, 6.8µF/400V, 8x12mm Koshin C3 Capacitor, Ceramic,220pF/500V,0805,SMD POE C4 Capacitor, Ceramic,4.7µF/35V,0805,SMD POE C5,C6 Capacitor, Electrolytic, 330µF/10V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE BD1 Bridge,B6S,600V/0.5A,MDI,SMD PANJIT D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A,DO-41 Good-Ark D8 Diode, schottky, 40V/5A, SK54, SMC PANJIT L1 Axial Inductor, 1.5mH,0410,Dip Amode Tech Q1 Transistor, HFE 20-25, NPN,D13003X,TO-251 Huawei PCB1 PCB, L*W*T=26.4x24.4x0.8mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10 ohm,KNP, 5% TY-OHM R1 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 1MΩ, 0805, 5% TY-OHM R3 Chip Resistor, 330Ω, 0805, 5% TY-OHM R4 Chip Resistor, 22Ω, 0805, 5% TY-OHM R5 Chip Resistor, 65kΩ, 0805,1% TY-OHM R6 Chip Resistor, 11.3kΩ, 0805,1% TY-OHM R7,R8 Chip Resistor, 15MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 0.91Ω, 1206,1% TY-OHM R10 Chip Resistor, 162kΩ, 0805, 5% TY-OHM R11 Chip Resistor, 3.6kΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.53mH, EFD15 U1 IC, ACT336SH,SOP-8 Active-Semi. Winding Terminal Turns Wire Insulation Start Finish Type Size*QTY Layer Thick/Wide Layer P2 3 1 23 2UEW 0.12Φ*2 1 0.025*8.5W 2 4 --> 47 2UEW 0.15Φ*1 1 0.025*8.5W --> 2 46 2UEW 0.15Φ*1 1 0.025*8.5W SH1 1 NC 17 2UEW 0.12Φ*3 1 0.025*8.5W 2 S1 A B 8 TEX-E 0.30Φ*2 1 0.025*8.5W 2 SH2 NC 1 21 2UEW 0.12Φ*3 1 0.025*8.5W 2 B A NC NC Reverse 68.00% 70.00% 72.00% 74.00% 110 135 160 185 210 235 Efficiency Vin Average Efficiency Vs Vin Efficiency Vs Vin 115V,230"

-19- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT337 5V/1500MA CHARGER Bill of Materials Transformer Specitication Build up Wind ing Terminal Turns Wire Insulation Start Finish Type Size*QTY Layer Thick/Wide Laye r P1 2 3 74 2UEW 0.22Φ*1 1 0.025*8.5W 2 SH1 --> 4 0.9 Copper 0.7mm 1 0.025*8.5W 2 S1 B A 8 TEX-E 0.75Φ*1 1 0.025*8.5W 2 P2 5 4 18 2UEW 0.14¢*3 1 0.025*8.5W 2 P3 3 1 36 2UEW 0.22¢*1 1 0.025*8.5W 2 SH2 4 core 3 Copper wire 0.15Φ*1 1 0.025*8.5W 8 Note:1.SH1 and SH2 are shielding; P1 ,P2 and P3 are primary and S1 is secondary.(Bobbin:EE16) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac

2 P1 Inductance Inductance between pins 2 and 3 at

1Vac & 1kHz 1.15mH± 7% Inductance between pins 2 and 3 with pins 4-5 and 6-10 shorted 75µH PCB Top Layer Typical Performance Characteristics STANDBY POWER EFFICIENCY EVALUATION KITS Vin Vo Io ACT337-01 85-264Vac 4.75-5.25V 1500-1800mA REF DESCRIPTION MFTR C1 Capacitor, Electrolytic, 6.8µF/400V, 8×14mm Koshin C2 Capacitor, Electrolytic, 10µF/400V,10×14mm Koshin C3 Capacitor, Ceramic,220pF/500V,1206,SMD POE C4 Capacitor, Electrolytic, 10µF/35V,5x11mm KSC C5,C6 Capacitor, Electrolytic,680µF/10V, 8 ×16mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE BD1 Bridge Rectifier,MB6S,600V/1.0A,SDIP PANJIT D5 Fast Recovery Rectifier, FR107,1000V/1.0A, DIP PANJIT D6 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D8 Diode, Schottky, 40V/5A, SS54, SMC Diodes L1 Choke Coil, 1.5mH, ¢6x8mm, DIP Amode Tech Q1 Transistor, NPN, 700V,D13005,TO-220 Huawei FR1 Fusible Resistor, 1W, 10Ω, 5% TY-OHM R1 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 1M,1206, 5% TY-OHM R3 Chip Resistor, 300Ω,1206, 5% TY-OHM R4 Chip Resistor, 15Ω, 0805, 5% TY-OHM R5 Chip Resistor, 66.7kΩ, 0805, 1% TY-OHM R6 Chip Resistor,12.4kΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 15MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 0.708Ω,1206, 1% TY-OHM R10 Chip Resistor, 80k, 0805, 5% TY-OHM R11 Chip Resistor, 3.6k, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.15mH±7%, EE16 USB Double-layer USB Rev:A U1 IC, ACT337SH-T,SOP-8 Active-Semi PCB1 PCB, L*W*T=50x26x1.6mm,Cem-1,Rev:A Jintong CC/CV CURVE PCB Bottom Layer

-21- PSR PSR PSR TM Active High Efficiency AC/DC Primary Switching Solutions ACT337 5V/2100MA CHARGER Bill of Materials Transformer Specitication Build up Wind- ing Terminal Turns Wire Insulation Start Finish Type Size*QTY Layer Thick/Wide Lay er P1 2 3 74 2UEW 0.22Φ*1 1 0.025*8.5W 2 SH1 --> 4 0.9 Copper 0.7mm 1 0.025*8.5W 2 S1 B A 8 TEX-E 0.75Φ*1 1 0.025*8.5W 2 P2 5 4 18 2UEW 0.14¢*3 1 0.025*8.5W 2 P3 3 1 36 2UEW 0.22¢*1 1 0.025*8.5W 2 SH2 4 core 3 Copper wire 0.15Φ*1 1 0.025*8.5W 8 Note:1.SH1 and SH2 are shielding; P1 ,P2 and P3 are primary and S1 is secondary.(Bobbin:EPC17) Electrical specifications Item Description Condition Limits 50Hz, 1 minute, from primary and secondary 3000Vac 1Vac & 1kHz 1.25mH± 7% Inductance between pins 2 and 3 with pins 4-5 and 6-10 shorted 75µH PCB Top and Bottom Layers Typical Performance Characteristics STANDBY POWER EFFICIENCY EVALUATION KITS Vin Vo Io ACT365-02 85-264Vac 4.75-5.25V >2200mA REF DESCRIPTION MFTR C1, C2 Capacitor, Electrolytic, 10µF/400V, 10×16mm KSC C3 Capacitor, Ceramic,220pF/500V,1206,SMD POE C4 Capacitor, Ceramic, 10µF/35V,1206,SMD KSC C5 Capacitor, Electrolytic, 1000µF/6.3V, 8 ×16mm KSC C6 Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm KSC C9 Capacitor, Ceramic,1000pF/50V,0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D5 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D6 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D8 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes L1 Choke Coil, 1.5mH, ¢6x8mm, DIP Amode Tech Q1 Transistor, NPN, 700V,D13005,TO-126 Huawei F1 Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube walter R1 Chip Resistor, 22Ω, 0805, 5% TY-OHM R2 Chip Resistor, 1MΩ,1206, 5% TY-OHM R3 Chip Resistor, 390Ω,1206, 5% TY-OHM R4 Chip Resistor, 15Ω, 0805, 5% TY-OHM R5 Chip Resistor, 80.6kΩ, 0805, 1% TY-OHM R6 Chip Resistor,18.2kΩ,0805, 1% TY-OHM R7 Chip Resistor, 30MΩ, 1206, 5% TY-OHM R9 Chip Resistor, 0.62Ω,1206, 1% TY-OHM R10 Chip Resistor, 162kΩ, 0805, 5% TY-OHM R11 Chip Resistor, 3kΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM T1 Transformer, LP = 1.25mH±7%, EPC17 USB Double-layer USB Rev:A U1 IC, ACT337SH-T,SOP-8 Active-Semi S/H1 AL HeatSink, LxWxH=7.5x17x2.0mm PCB1 PCB, L*W*T=40x27.9x1.6mm,Cem-1,Rev:A Jintong SH1

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Active-Semi: ACT336SH-T

Product Information

ACT36X specifications and overview.

Summary

AC/DC Charger/Adapter Reference Designs Rev 2.5 Oct 2012

Description

AC/DC Charger/Adapter Reference Designs Rev 2.5 Oct 2012

Source title ACT36X Datasheet(PDF) - Active-Semi, Inc

Related Parts

More parts from the same family.

Browse manufacturer