ACS244MS INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 2
Technical content
Features
- QML Qualified Per MIL-PRF-38535 Requirements
- 1.25Micron Radiation Hardened SOS CMOS
- Radiation Environment - Latch-up Free Under any Conditions
5 RAD(Si)
- Input Logic Levels . VIL = (0.3V)(VCC ), VIH = (0.7V)(VCC )
Applications
- Databus Driving
- Data Routing
- Redundant Data Control Circuitry
Description
The Radiation Hardened ACS244MS is a Non-Inverting, Octal, Three-State Buffer/Line Driver with two active-LOW Enable inputs ( AE and BE). Each Enable input controls four outputs. When an Enable input is LOW, the corresponding outputs are active. A HIGH on an Enable input causes the corresponding outputs to be high impedance, regardless of the input levels. The ACS244MS is fabricated on a CMOS Silicon on Sap- phire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable perfor- mance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS244 are contained in SMD 5962-98541. A “hot-link” is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm
Ordering Information
ACS244 (SBDIP) TOP VIEW ACS244 (FLATPACK) TOP VIEW SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE ( oC) PACKAGE CASE OUTLINE 5962F9854101VRC ACS244DMSR-02 -55 to 125 20 Ld SBDIP CDIP2-T20 N/A ACS244D/Sample-02 25 20 Ld SBDIP CDIP2-T20 5962F9854101VXC ACS244KMSR-02 -55 to 125 20 Ld Flatpack CDFP4-F20 N/A ACS244K/Sample-02 25 20 Ld Flatpack CDFP4-F20 N/A ACS244HMSR-02 25 Die N/A 1AE AI1 BO4 AI2 BO3 AI3 AI4 BO2 BO1 GND VCC AO1 BI4 AO2 BE BI3 AO3 BI2 AO4 BI1 12 0 AE AI1 BO4 AI2 BO3 AI3 AI4 BO2 BO1 GND VCC AO1 BI4 AO2 BE BI3 AO3 BI2 AO4 BI1 File Number 4479
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Die Characteristics DIE DIMENSIONS: Size: 2540µm x 2540µm (100 mils x 100mils) Thickness: 525µm ±25µm (20.6 mils±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: <2.0 x 105 A/cm2 Transistor Count: 214 Metallization Mask Layout ACS244MS BO4 (3) AI2 (4) BO3 (5) AI3 (6) BO2 (7) AI4 (8) VCC BO1 (9) AO4 (12) (13) BI2 (14) AO3 (15) BI3 (16) AO2 (17) BI4 (18) AO1 (20) V CC (20) AE (1) AI1 (2) BE (19) (11) BI1 (10) GND (10) GND ACS244MS