ACS138MS RENESAS | Alldatasheet
Document overview
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Technical content
Features
- QML Qualified Per MIL-PRF-38535 Requirements
- 1.25Micron Radiation Hardened SOS CMOS
- Radiation Environment - Latch-up Free Under any Conditions
5 RAD(Si)
Applications
- Memory Decoding
- Data Routing
- Code Conversion
Description
The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs (A0, A1 and A2). If the device is enabled, these inputs deter- mine which one of the eight normally high outputs will go low. Two active low and one active high enable inputs (E 1, E 2 and E 3) are provided to make cascaded decoder designs easier to implement. The ACS138MS is fabricated on a CMOS Silicon on Sap- phire (SOS) process, which provides an immunity to Single Event Latch-up and the capabili ty of highly reliable perfor- mance in any radiation envir onment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS138 are contained in SMD 5962-98534.
Ordering Information
ACS138 (SBDIP) TOP VIEW ACS138 (FLATPACK) TOP VIEW SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE ( oC) PACKAGE CASE OUTLINE 5962F9853401VEC ACS138DMSR-02 -55 to 125 16 Ld SBDIP CDIP2-T16 N/A ACS138D/Sample-02 25 16 Ld SBDIP CDIP2-T16 5962F9853401VXC ACS138KMSR-02 -55 to 125 16 Ld Flatpack CDFP4-F16 N/A ACS138K/Sample-02 25 16 Ld Flatpack CDFP4-F16 N/A ACS138HMSR-02 25 Die N/A GND VCC GND 11 6 VCC
FN4461 Rev.0.00 Page 2 of 2 December 1997 ACS138MS Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 1999. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. Die Characteristics DIE DIMENSIONS: Size: 2390 mx 2390m (94 mils x 94 mils) Thickness: 525 m 25m (20.6 mils 1 mil) Bond Pad: 110m x 110m (4.3 x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7m 0.1m Metal 2 Thickness: 1.0m 0.1m SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30m 0.15m SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: <2.0 x 10 5 A/cm2 Transistor Count: 220 Metallization Mask Layout ACS138MS A1 A0 VCC Y0 Y7 GND Y 6 Y5