ACS110-7SN

ACS110-7SN STMICROELECTRONICS | Alldatasheet

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Technical content

ACS110-7SN/SB2® April 2003 - Ed: 2A AC LINE SWITCH SOT-223 ACS110-7SN n Blocking voltage : VDRM /V RRM = +/-700V n Avalanche controlled : VCL typ = 1100 V n Nominal conducting current : IT(RMS) =1 A n Gate triggering current : IGT <1 0m A n Switch integrated driver n High noise immunity : static dV/dt >500V/µs

FEATURES

The ACS110 belongs to the AC line switch family built around the ASD™ concept. This high perfor- mance switch circuit is able to control a load up to 1 The ACS™ switch embeds a high voltage clamp- ing structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin.

DESCRIPTION

G OUT n No external protection snubber or varistor needed n Enables equipment to meet IEC 61000-4-5 & IEC 335-1 (DIL-8 package) n Reduces component count up to 80 % n Interfaces directly with the microcontroller n Eliminates any gate kick back on the microcontroller n Allows straightforward connection of several ACS™ on same cooling pad (SOT-223) BENEFITS OUT COM G S D ON FUNCTIONAL DIAGRAM ASD™ AC Switch Family DIL-8 ACS110-7SB2 COM OUT COM COM COM G n AC static switching in appliance control systems n Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater MAIN APPLICATIONS

Symbol Parameter Value Unit VDRM /VRRM Repetitive peak off-state voltage Tj = -10 °C 700 V IT(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz SOT-223 Ttab = 105 °C 1 A DIL-8 Tlead = 110 °C ITSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz 8 A F =60 Hz 11 A I2t Fusing capability tp = 10ms 0.35 A²s dI/dt Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) Tj = 125°C F = 120 Hz 50 A/ µs VPP Non repetitive line peak pulse voltage note 1 2k V Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Note 1: according to test described by IEC61000-4-5 standard & Figure 3. ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol Parameter Value Unit PG (AV) Average gate power dissipation 0.1 W IGM Peak gate current (tp = 20µs) 1 A VGM Peak positive gate voltage (in respect to pin COM) 5 V GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient S = 5cm² SOT-223 60 °C/W DIL-8 60 °C/W Rth (j-l) Junction to tab/lead for full cycle sine wave conduction SOT-223 20 °C/W DIL-8 15 °C/W S = Copper surface under Tab THERMAL RESISTANCES

Symbol Test Conditions Values Unit IGT VOUT =12V (DC) R L=140Ω QII - QIII Tj=25°C MAX 10 mA VGT VOUT =12V (DC) R L=140Ω QII - QIII Tj=25°C MAX 1 V VGD VOUT =VDRM R L=3.3kΩ Tj=125°C MIN 0.15 V IH IOUT = 100mA gate open Tj=25°C MAX 45 mA IL IG = 20mA Tj=25°C MAX 65 mA VTM IOUT = 1.4A tp=380µs Tj=25°C MAX 1.3 V VTO Tj=125°C MAX 0.8 V Rd Tj=125°C MAX 300 m Ω IDRM / IRRM VOUT = 700V Tj=25°C MAX 2 µA Tj=125°C MAX 200 dV/dt V OUT =460V gate open Tj=110°C MIN 500 V/ µs (dI/dt)c (dV/dt)c = 20V/µs Tj=125°C MIN 0.5 A/ms VCL ICL = 1mA tp=1ms Tj=25°C TYP 1100 V

ELECTRICAL CHARACTERISTICS

For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3*. Parameter Symbol Parameter description IGT Triggering gate current VGT Triggering gate voltage VGD Non-triggering gate voltage IH Holding current IL Latching current VTM Peak on-state voltage drop VTO On state threshold voltage Rd On state dynamic resistance I DRM /IRRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current V CL Clamping voltage ICL Clamping current PARAMETER DESCRIPTION

The ACS110 device is well adapted to Washing machine, dishwasher, tumble drier, refrigerator, water heaters,air-conditioning systems, microwave ovens and other cookware. It has been designed especially to switch on & off low power loads such as solenoid, valve, relay, dispenser, micro-motor, pump, fan and defrost heaters. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load This ACS™ switch is triggered with a negative gate current flowing out of the gate pin G. It can be driven di- rectly by the digital controller through a resistor as shown on the typical application diagram. Several ACS110 devices can be connected on the same cooling PCB pad, which is the COM pin. Thanks to its thermal and turn off commutation performances, the ACS110 switch is able to drive with no turn off additional snubber an inductive load up to 1 A. AC LINE SWITCH BASIC APPLICATION OUT ACS110 COM G S D ON ST72 MCU N AC MAINS L R - Vcc L M LOAD TYPICAL APPLICATION DIAGRAM At the end of the last conduction half-cycle, the load current reaches the holding current level IH , and the ACS™ switch turns off. Because of the inductance L of the load, the current flows then through the ava- lanche diode D and decreases linearly to zero. During this time, the voltage across the switch is limited to the clamping voltage V CL . The energy stored in the inductance of the load depends on the holding current IH and the inductance (up to 10 H); it can reach about 10 mJ and is dissipated in the clamping diode section. The ACS switch sustains the turn off energy because its clamping section is designed for that purpose. HIGH INDUCTIVE SWITCH-OFF OPERATION

Fig. A:Turn-off operation of the ACS110 switch with an electro-valve: waveform of the pin OUT current I OUT and Out-COM voltage VOUT . VOUT IOUT VCL IH Fig. B:ACS110 switch static characteristic. The ACS110 switch is able to sustain safely the AC line transient voltages either by clamping the low en- ergy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure C is representative of the final ACS application and is also used to stress the ACS switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACS switch sus- tains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rise is high as shown on figure D. Such non repetitive test can be done 10 times on each AC line voltage polarity. AC LINE TRANSIENT VOLTAGE RUGGEDNESS LR VAC +V PPSURGE VOLTAGE AC LINE & GENERATOR RG = 220Ω COM OUT G S D ON ACSxx Fig. C:Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150Ω , L = 10µH, V PP = 2kV. Fig. D:Current and Voltage of the ACS110 dur- ing IEC61000-4-5 standard test withR=1 5 0 Ω , L=1 0 µ H&VPP = 2kV.

Maximum power dissipation vs RMS on state current. RMS on-state current vs ambient temperature, case temperature and package Relative variation of thermal impedance junction to ambient vs pulse duration and package Relative variation of gate trigger current vs junction temperature Relative variation of holding and latching current vs junction Relative variation of dV/dt vs Tj Relative variation of (dV/dt) c vs (di/dt)c Surge peak on-state current vs number of cycles Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t. On-state characteristics (maximal values) Thermal resistance junction to ambient vs copper surface under tab Relative variation of critical (di/dt)c vs junction temperature OTHER FIGURES 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 I (A)T(RMS) α =180° 180° α α P(W) Fig. 1:Maximum power dissipation versus RMS on-state current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 T /T (°C)tab lead α =180° SOT-223- DIL-8 I (A)T(RMS) Fig. 2-1:RMS on-state current versus tab or lead temperature. I (A)T(RMS) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 T (°C)amb α =180° Printed circuit board FR4 Natural convection S=5cm² Fig. 2-2:RMS on-state current versus ambient temperature. 1.E-02 1.E-01 1.E+00 t (s)p K=Zth /Rth (j-a) Fig. 3:Relative variation of thermal impedance junction to ambient versus pulse duration.

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 T (°C)j IGT I& ILH I , I , I [T ] / I , I , I [T = 25°C]G THL j G THL j Fig. 4:Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). 25 50 75 100 125 T (°C)j dV/dt [T ] / dV/dt [T = 125°C]jj VOUT =460V Fig. 5:Relative variation of static dV/dt versus junction temperature. 1 10 100 1000 Number of cycles Non repetitive T initial=25°Cj Repetitive T =105°C ab I (A)TSM t=20ms Fig. 8:Surge peak on-state current versus number of cycles. (dI/dt) [(dV/dt) ] / Specified (dI/dt)cc c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 50 (dV/dt) (V/µs)c VOUT =400V Fig. 6:Relative variation of critical rate of de- crease of main current versus reapplied dV/dt (typical values). 0.1 1.0 10.0 100.0 0.01 0.10 1.00 10.00 t (ms)p ITSM I²t I (A), I²t (A²s)TSM T initial=25°Cj Fig. 9:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. (dI/dt) [Tj] / (dI/dt) [T = 125°C]cc j 25 50 75 100 125 T (°C)j VOUT =400V Fig. 7:Relative variation of critical rate of decrease of main current versus junction temperature.

S(cm²) SOT -223 Rth (°C/W)(j-a) Fig. 11:Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) ACS 1 10 - 7 S X AC Switch Number of switches I 10 = 1.0A T(RMS) V 7 = 700V DRM Gate Sensitivity S= 10mA Package N = SOT -223 B2 = DIL-8

ORDERING INFORMATION

0.01 0.10 1.00 10.00 V (V)TM Tjmax. : V =0.8V R =300m to d Ω Tj=25°C Tj=125°C I (A)TM Fig. 10: On-state characteristics (maximum values).

PACKAGE OUTLINE MECHANICAL DATA SOT-223 REF. DIMENSIONS Millimeters Inches A 1.80 0.071 A1 0.02 0.10 0.001 0.004 e 2.3 0.090 e1 4.6 0.181 V 10° max A B D H E e c V 2 3 DESCRIPTIONPIN GATE DRAIN SOURCE DRAIN BASE COLLECTOR COLLECTOR EMITTER Recommended soldering pattern SOT -223 PACKAGE FOOT PRINT SOT-223

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com PACKAGE OUTLINE MECHANICAL DATA DIL-8 eB E H GAUGE PLANE 0.38 D eA c b b2 e A LA1 REF. DIMENSIONS Millimetres Inches A 5.33 0.21 A1 0.38 0.015 e 2.54 0.10 eA 7.62 0.30 eB 10.92 0.430 Ordering type Marking Package Weight Base qty Delivery mode ACS110-7SN ACS1107S SOT-223 0.12 g 1000 Tape & reel ACS110-7SB2 ACS1107S DIL8 0.6 g 50 Tube n Epoxy meets UL94,V0 OTHER INFORMATION