ACS08MS INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
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Technical content

Features

  • QML Qualified Per MIL-PRF-38535 Requirements
  • 1.25Micron Radiation Hardened SOS CMOS
  • Radiation Environment - Latch-up Free Under any Conditions

5 RAD(Si)

Applications

  • High Speed Control Circuits
  • Sensor Monitoring
  • Low Power Designs

Description

The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level on either the A or B input results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS08MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS08 are contained in SMD 5962-95651. A “hot-link” is provided on our homepage with instructions for downloading. www.intersil.com/data/sm/index.asp

Ordering Information

ORDERING NUMBER INTERNAL MARKETING NUMBER TEMP. RANGE ( oC) PACKAGE DESIGNATOR 5962F9565101VCC ACS08DMSR -55 to 125 14 Ld SBDIP CDIP2-T14 ACS08D/SAMPLE ACS08D/SAMPLE 25 14 Ld SBDIP CDIP2-T14 5962F9565101VXC ACS08KMSR -55 to 125 14 Ld Flatpack CDFP4-F14 ACS08K/SAMPLE ACS08K/SAMPLE 25 14 Ld Flatpack CDFP4-F14 5962F9565101V9A ACS08HMSR 25 Die N/A Pinouts ACS08 (SBDIP) TOP VIEW ACS08 (FLATPACK) TOP VIEW GND VCC 1A1 GND VCC File Number 3993.1CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli- able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Die Characteristics DIE DIMENSIONS: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils±1 mil) Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: <2.0 x 105 A/cm2 Transistor Count: 176 Metallization Mask Layout ACS08MS B1 A1 V CC B4 NC NC Y2 GND Y3 A3 ACS08MS