ACMS49P04H8-HF COMCHIP | Alldatasheet

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  • Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - AEC-Q101 Qualified. Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM Single pulse avalanche energy (Note 3) RθJC Thermal resistance junction to air (Note 4) RθJA EAS Unit V V A A °C/W °C/W mJ Thermal resistance junction to case ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (Tc = 25°C) PD W -40 ±20 -49 -268 125 2.5 -55 to +150 -55 to +150 Continuous drain current (VGS = -10V, Tc = 25°C) Continuous drain current (VGS = -10V, Tc = 100°C) ID -31 Pulsed drain current (Note 1, 2)

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = -250µAVDSS Zero gate voltage drain current VDS = -32V, VGS = 0V, Tc = 25°CIDSS RDS(on)Static drain-source on-resistance (Note 1) VGS = -10V, ID = -15A VGS = -4.5V, ID = -10A Min MaxTyp Unit µA mΩ Comchip Technology CO., LTD. Page 2 V = V , ID = -250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics V V -40 ±100 -2.5-1 Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -25V, f = 1MHz 3941 262 237 -1.47 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = -15V, VGS = -10V, RG = 3.3Ω, RL = 15Ω, ID = -1A 100 9.6 Switching Characteristics V A Source-Drain Diode Characteristics ISD = -1.7A, VGS = 0V, TJ = 25°C -1.2 -49Diode continuous forward current (Note 2,4) ISD Diode forward voltage VSD Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = -32V, VGS = -10V, ID = -50A 67.5 Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 1. The data tested by pulsed, pulse width ≤ 10µs, duty cycle ≤ 2%. 2. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. AQW-JTR43 REV:A

Rating and Characteristic Curves (ACMS49P04H8-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.2 - Transfer Characteristics Gate to Source Voltage, VGS (V) -160 Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 -1 -2 -3 -6 -200 Drain Current, ID (A) -140 -150 -100 -50 -3V -3.5V -4.5V -4V -5V -8V -10V -120 -100 -60 -80 -20 -40 -1 -2 -3 -6-4 -5 25°C 175°C Fig.4 - Drain-Source On-State Resistance IF, (A) 0 -150 -100 Fig.3 - Body-Diode Characteristics Drain Current, ID (A) On Resistance, RDS(ON) (mΩ) 0 20.8 1.2 1000 100 0.4 -501.6 Source-Drain Voltage, VSD (V) 175°C 25°C -4.5V -4V -5V -10V Fig.5 - Gate Voltage vs. Junction Temperature Fig.6 - On- Resistance vs. Junction Temperature 18060-60 -2.0 -1.5 -1.0 -0.5 Junction Temperature, TJ (°C) On Resistance, RDS(ON) (mΩ) -20 20 100 140 Gate Threshold Voltage,VGS(th) (V) VGS= -4.5V ID=30A VGS= -10V ID=50A Junction Temperature, TJ (°C) 18060-60 -20 20 100 140 ID= -850µA ID= -85µA AQW-JTR43 REV:A

Rating and Characteristic Curves (ACMS49P04H8-HF) MOSFET Comchip Technology CO., LTD. Page 4 Fig.8 - Drain-Source Breakdown Voltage Junction Temperature, TJ (°C) 60-60 30 -53 Total Gate-Charge, QG (nC) Fig.7 - Capacitance Characteristics Capacitance, C (pF) 0 -10 -20 -30 10000 Fig.9 - Gate-Charge Characteristics BVDSS, (V) -30 -52 1000 100 Gate to Source Voltage, VGS (V) 150 Fig.10 - Safe Operating Area Drain Current, ID (A) 12090 200 806040 Drain to Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Ciss Coss Crss -51 -50 -49 -48 -47 -46 -45 ID= -1mA VD=32V 1000 0.1 10 10000.1 1001 10µs 0.5ms 1ms 10ms TC=25°C VGS≤10V Single pulse Thermal Limit RDS(on) Limit Package Limit 100 AQW-JTR43 REV:A

Comchip Technology CO., LTD. Page 5AQW-JTR43 REV:A Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.55 + 0.01 330 ± 1.00 1.75 ± 0.10 0.061 + 0.0004 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN5x6 -8L 6.30 ± 0.10 0.248 ± 0.004 5.30 ± 0.10 0.209 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° PDFN5x6 -8L AP B C W E F dP1 P0 T T 0.25 ± 0.03 0.010 ± 0.001

Comchip Technology CO., LTD. Page 6AQW-JTR43 REV:A Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN5x6-8L ACMS49P04H8-HF 130P04 130P04 XXX XXX = Control code Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 1.00 1.27 0.039 0.050 A B C PDFN5x6-8L 0.47 0.019D 0.0310.80 0.85 4.50 0.033 0.177 E F G 4.60 0.181H A B C D E F G H Pin 1 G