ACMS35N03V8-HF COMCHIP | Alldatasheet

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Technical content

Features

  • Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 30V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 8A Min MaxTyp Unit µA mΩ V Comchip Technology CO., LTD. Page 2 V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 20A, VGS = 0V, TJ = 25°C V V ±100 2.51 1.2Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 15V, f = 1MHz 952 110 130 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 15V, VGS = 10V, ID = 20A 9.8 4.2 3.5 REV:A Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = 15V, VGS = 10V, RG = 1.6Ω ID = 30A 2.9 2.6 2.4 Switching Characteristics RDS(on) mΩ18 Notes: 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. VGS = 4.5V, ID = 6A ATC = 25°C 23Diode continuous forward current (Note 1, 4) IS 140Pulsed source drain current (Note 2, 4) ISM 4. The EAS test condition is L=0.1mH, VDD=15V, VGS=10V. AQW-JTR47

Rating and Characteristic Curves (ACMS35N03V8-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.4 - Body-Diode Characteristics Fig.1 - On-Region Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 2 41 Fig.3 - On-Resistance vs. Gate-Source Voltage 1.8 Fig.5 - On-Resistance vs. Junction Temperature Fig.6 - Transfer Characteristics REV:A Source Current, IS (µA) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage Drain Current, ID (A) On-Resistance, RDS(ON) (mΩ) 0 6 0.2 0.4 0.6 10.8 Gate-Source Voltage, VGS (V) 7.83.8 9.8 On-Resistance, RDS(ON) (mΩ) 10025 7550 150125 Junction Temperature, TJ (°C) Gate-Source Voltage, VGS (V) 5.8 Drain Current, ID (A) Source-Drain Voltage, VSD (V) 1.00E+03 1.00E+04 VGS= 2.5V VGS= 3V VGS= 3.5V, 4V, 4.5V, 5V, 8V, 10V 421 3 VGS= 4.5V VGS= 10V ID= 8A 25°C 75°C 100°C 125°C 150°C On-Resistance, RDS(ON) (mΩ) ID=8A VGS=10V VDS=5V 25°C 150°C 1.00E+05 1.00E+06 1.00E+07 1.00E+02 1.00E+01 1.00E+00 100°C 125°C 150°C 25°C 75°C AQW-JTR47

Rating and Characteristic Curves (ACMS35N03V8-HF) MOSFET Comchip Technology CO., LTD. Page 4 Fig.7 - Capacitance Characteristics Drain-Source Voltage, VDS (V) C (pF) 0 10 205 1400 Fig.9 - Gate Voltage vs. Junction Temperature REV:A Fig.8 - Drain-Source vs. Junction Temperature BVDSS (V) 2.0 1.4 1.2 1.0 0.6 0.8 1.6 Gate Threshold Voltage, VGS(TH) (V) 1.8 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) 10025 7550 150125 10025 7550 150125 ID=250µA 1200 1000 800 600 400 200 f=1MHz Ciss Coss Crss 0.4 0.2 ID=250µA AQW-JTR47

Comchip Technology CO., LTD. Page 5 REV:A Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.50 + 0.10 − 0.00 330 ± 1.00 1.75 ± 0.10 0.059 + 0.004 − 0.000 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN3x3 -8L 3.60 ± 0.10 0.142 ± 0.004 3.60 ± 0.10 0.142 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° T 0.25 ± 0.02 0.010 ± 0.001 A B C d E F P0P1 P W T PDFN3x3 -8L AQW-JTR47

Comchip Technology CO., LTD. Page 6 REV:A Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN3x3-8L ACMS35N03V8-HF 120N03 120N03 Suggested P.C.B. PAD Layout SIZE (inch) 0.017 (mm) 0.42 0.70 0.65 0.028 0.026 A B C PDFN3x3-8L 2.25 0.089D 0.0932.37 0.42 0.23 0.017 0.009 E F G 1.85 0.073H A B C D E F G H I 3.70 0.146I Pin 1 xxx XXX = Control code G AQW-JTR47