ACMS18P06V8-HF COMCHIP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Features

Maximum Ratings (at TC=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM Unit V V A A Operating junction temperature range Storage temperature range TJ TSTG -60 ±20 -6.1 -55 to +175 -55 to +175 Pulsed drain current (tp=10µs, TC=25°C) Single pulse avalanche energy (L=0.5mH) (Note 4) EAS -108 mJ Continuous drain current (TC=25°C) Continuous drain current (TC=100°C) ID -18 ID -13 Power dissipation (TC=25°C) PD W2.8 Dimensions in inches and (millimeter) PDFN3x3-8L 0.033(0.85) 0.026(0.65) 0.030(0.75) 0.022(0.55) 0.008(0.20) 0.004(0.10) 0.122(3.10) 0.114(2.90) 0.136(3.45) 0.124(3.15) 0.100(2.55) 0.093(2.35) 0.122(3.10) 0.114(2.90) 0.016(0.40) 0.008(0.20) 0.075(1.90) 0.059(1.50) 0.008(0.20) 0.016(0.40) 0.008(0.20) 0.016(0.40) 0.043(1.10) 0.028(0.70) 0.000(0.00) 0.004(0.10) 0.000(0.00) 0.004(0.10) S S S G D D D D Circuit Diagram - G : Gate - S : Source - D : Drain D D D D S S S G Mechanical data - Case: PDFN3x3-8L, molded plastic. - Terminals: Matte tin plated leads, solderable per MIL-STD-202, method 208. IDContinuous drain current (TA=25°C) (Note 1) Continuous drain current (TA=100°C) (Note 1) -4.2ID Power dissipation (TA=25°C) (Note 2) PD 1.2 - AEC-Q101 Qualified. - Advanced trench technology. - Fast switching spead. ACMS18P06V8-HF PDPower dissipation (TA=25°C) (Note 1) RθJA °C/WThermal resistance junction to air (Note 1) RθJCThermal resistance junction to case SymbolParameter Typ Unit Thermal Characteristics Min Max 4.5 °C/W °C/W12590 RθJAThermal resistance junction to air (Note 2)

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µABVDSS Zero gate voltage drain current VDS = -60V, VGS = 0VIDSS RDS(on) Drain-source on-resistance (Note 3) VGS = -10V, ID = -7A Min MaxTyp Unit µA mΩ V V = V , ID = -250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = -1A, VGS = 0V V V -60 ±100 -3-1 -1.2Diode forward voltage (Note 3) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -30V, f = 1MHz 1902 104 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = -30V, ID = -5A , VGS = -10V 5.5 Turn-on delay time (Note 5) Turn-off delay time (Note 5) Turn-on rise time (Note 5) Turn-off fall time (Note 5) td(on) tr td(off) tf nsVDD = -30V, VGS = -10V, RG = 3Ω ID = -5A 4.3 6.3 46.7 25.3 Switching Characteristics RDS(on) mΩ70VGS = -4.5V, ID = -7A ns ISD = -5A, VGS = 0V, dI/dt = 100A/µs Reverse recovery time trr nC17Reverse recovery change Qrr Notes: 3. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. Gate resistance RG VGS = 0V, f = 1MHz 10 Ω -1.5 -0.7 5. Guaranteed by design, not subject to production. AQW-JTR137 2. The data tested by surface mounted on a minimum recommended FR-4 board.

Comchip Technology CO., LTD. Page 3 REV:A MOSFET Typical Rating and Characteristic Curves (ACMS18P06V8-HF) AQW-JTR137 Fig.2 - Drain Current Drain Current, -ID (A) Fig.3 - Typical Output Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 0 4 52 Fig.5 - On-Resistance vs. Gate-Source Voltage Gate-Source Voltage, -VGS (V) 84 10 On-Resistance, RDS(ON) (mΩ) Fig.6 - Body-Diode Characteristics Source Current, -IS (A) 0.6 1.5 Source-Drain Voltage, -VSD (V) Fig.1 - Power Dissipation 100500 Power Dissipation, PD (W) 175 Fig.4 - On-Resistance vs. Drain Current and Gate Voltage 10 5030200 Drain Current, -ID (A) On-Resistance, RDS(ON) (mΩ) Case Temperature, TC (°C) Case Temperature, TC (°C) 7525 125 10050 1507525 125 0.3 0.9 1.2 150 175 ID= -7A 175°C 25°C 175°C 25°C -55°C-55°C VGS= -10V VGS= -4.5V 100 VGS= -4V VGS= -3V VGS= -2.5V VGS= -3.5V VGS= -4.5V,-5V,-6V,-8V VGS= -10V

Comchip Technology CO., LTD. Page 4 REV:A MOSFET AQW-JTR137 Typical Rating and Characteristic Curves (ACMS18P06V8-HF) Fig.7 - Normalized On-Resistance vs. Junction Temperature 25-75 0-25-50 1757550 Junction Temperature, TJ (°C) 2.0 0.6 1.4 1.0 Normalized Static Drain-Source On-Resistance, RDS(ON) 100 125 150 1.2 1.8 0.8 1.6 Fig.11 - Normalized Breakdown Voltage vs. Junction Temperature 25-75 0-25-50 1757550 Junction Temperature, TJ (°C) 1.05 1.0 Normalized Drain-Source Breakdown Voltage, BVDSS 100 125 150 0.9 Normalized Threshold Voltage, VGS(th) Fig.12 - Normalized VGS(th) vs. Junction Temperature Junction Temperature, TJ (°C) 0.6 0.8 1.0 1.1 0.7 0.9 25-75 0-25-50 1757550 100 125 150 Fig.10 - Gate Charge Characteristics Total Gate Charge, QG (nC) 0 20 40 Gate-Source Voltage, -VGS (V) 8 Fig.9 - Capacitance Characteristics Drain-Source Voltage, -VDS (V) Capacitance, C (pF) 10000 Fig.8 - Transfer Characteristics Gate-Source Voltage, -VGS (V) Drain Current, -ID (A) 1000 2010 30 60 0.95 ID= -250µA 40 50 100 0.5 0.3 1.3 VGS= -10V, ID= -7A VGS= -4.5V, ID= -7A 1.1 VDS= -10V 175°C 25°C -55°C VDS= -30V, ID= -5A ID= -250µA f=1MHz Coss Crss Ciss 10 30 1.2 0.4

Comchip Technology CO., LTD. Page 5 REV:A MOSFET AQW-JTR137 Typical Rating and Characteristic Curves (ACMS18P06V8-HF) Fig.13 - Safe Operation Area Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 100 1000 1 10 1000.1 0.1 TC=25°C δ=tp/T=0.01 100ms 1ms 100µs tp=10µs

Comchip Technology CO., LTD. Page 6 REV:A MOSFET Reel Taping Specification Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.50 + 0.10 − 0.00 330.00 ± 1.00 1.75 ± 0.10 0.059 + 0.004 − 0.000 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN3x3 -8L 3.60 ± 0.10 0.142 ± 0.004 3.60 ± 0.10 0.142 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100.00 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° T 0.25 ± 0.02 0.010 ± 0.001 A B C d E F P0P1 P W T PDFN3x3 -8L AQW-JTR137

Comchip Technology CO., LTD. Page 7 REV:A MOSFET Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN3x3-8L ACMS18P06V8-HF 500P06X 500P06X Suggested P.C.B. PAD Layout SIZE (inch) 0.017 (mm) 0.42 0.70 0.65 0.028 0.026 A B C PDFN3x3-8L 2.25 0.089D 0.0932.37 0.42 0.23 0.017 0.009 E F G 1.85 0.073H A B C D E F G H I 3.70 0.146I Pin 1 xxx XXX = Control code G AQW-JTR137