ACMS100N04D-HF COMCHIP | Alldatasheet

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  • Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density technology. - Excellent Cdv/ dt effect decline. - 100% EAS guaranteed. D S G Maximum Ratings (at TC=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM Unit V V A A ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W ±20 100 400 -55 to +150 -55 to +150 Continuous drain current (TC=25°C) Continuous drain current (TC=100°C) ID 68 Pulsed drain current (tp=10µs, TC=25°C) Single pulse avalanche energy (Note 3) EAS 230 mJ Continuous drain current (TA=25°C) (Note 1) Continuous drain current (TA=100°C) (Note 1) ID 21 ID 13 RθJA °C/WThermal resistance junction to air (Note 1) 0.9 RθJCThermal resistance junction to case SymbolParameter Typ Unit Thermal Characteristics Min Max 1.3 °C/W

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 40V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 30A Min MaxTyp Unit µA mΩ V V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 1A, VGS = 0V V V ±100 2.51 1.2Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 25V, f = 1MHz 4407 327 280 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 30V, VGS = 10V, ID = 15A 16.5 Turn-on delay time (Note 4) Turn-off delay time (Note 4) Turn-on rise time (Note 4) Turn-off fall time (Note 4) td(on) tr td(off) tf nsVDD = 30V, VGS = 10V RG = 3Ω, RL = 2.5Ω Switching Characteristics RDS(on) mΩ5.4VGS = 4.5V, ID = 20A ns IF = 15A, VGS = 0V, dIF/dt = 100A/µs Reverse recovery time trr nC30Reverse recovery change Qrr AQW-JTR53 Notes: 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=10mH. 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. Gate resistance RG VGS = 0V, f = 1MHz 1.6 Ω 4.9 1.5 0.7 4. Guaranteed by design, not subject to production.

Fig.6 - Body-Diode Characteristics 150 100 Comchip Technology CO., LTD. Page 3 REV:A MOSFET Rating and Characteristic Curves (ACMS100N04D-HF) Fig.1 - Power Dissipation Case Temperature, TC (°C) Power Dissipation, PD (W) 0 10050 100 Fig.3 - Typical Output Characteristics Fig.5 - On-Resistance vs. Gate-Source Voltage 2 5 250 150 0 842 10 0 4 On-Resistance, RDS(ON) (mΩ) 200 100 Fig.4 - On-Resistance vs. Drain Current and Gate Voltage IS, (A) Fig.2 - Drain Current Case Temperature, TC (°C) Drain Current, ID (A) 25 150125 50 100 150 0 10050 AQW-JTR53 25 75 150125 75 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100 Source-Drain Voltage, VSD (V) Drain Current, ID (A) On-Resistance, RDS(ON) (mΩ) 0.3 1.50.90.6 Gate-Source Voltage, VGS (V) 1 3 VGS= 4.5V VGS= 10V 1.2 25°C 150°C -55°C 1 953 7 25°C 150°C -55°C ID= 30A VGS= 2.5V 3.5V 4.5V 6V~10V

Comchip Technology CO., LTD. Page 4 REV:A MOSFET AQW-JTR53 Rating and Characteristic Curves (ACMS100N04D-HF) Fig.12 - Normalized VGS(th) vs. Junction Temperature Fig.7 - Normalized On-Resistance vs. Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain-Source On State Resistance, RDS(ON) 0 10050 2.2 Fig.9 - Capacitance Characteristics Fig.11 - Normalized Breakdown Voltage vs. Junction Temperature 1.0 10 100 10000 0.1 1.4 0.6 Normalized Drain-Source Breakdown Voltage, BVDSS 1000 100 Fig.10 - Gate-Charge Characteristics Normalized Threshold Voltage, VGS(th) Fig.8 - Transfer Characteristics Drain Current, ID (A) 20 50 90 1.8 25 75 175125 1.1 0.95 1.0 Drain-Source Voltage, VDS (V) C, (pF) Qg, (nC) Gate-Source Voltage, VGS (V) 2.0 0.8 1.2 1.6 150-25-50-75 Gate-Source Voltage, VGS (V) 2 541 3 10 704030 60 80 Junction Temperature, TJ (°C) 0.7 0.9 0.5 0.6 0.8 0.4 1.2 1.1 1.0 Junction Temperature, TJ (°C) 0 1005025 75 125 150-25-50-75 0 1005025 75 175125 150-25-50-75 VGS= 10V,ID= 30A VGS= 4.5V,ID= 20A VDS= 10V 25°C 150°C -55°C Ciss Coss Crss f=1MHz 1.05 0.9 VDS= 30V,ID= 15A ID=250µA ID=250µA

Comchip Technology CO., LTD. Page 5 REV:A MOSFET AQW-JTR53 Rating and Characteristic Curves (ACMS100N04D-HF) Fig.13 - Safe Operating Area 1000 Drain Current, ID (A) Drain-Source Voltage, VDS (V) 100 10 1000.1 1 100ms 10ms 1ms 100µs tp=10µs TC=25°C δ=tp/T=0.01

Comchip Technology CO., LTD. Page 6 REV:A Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-252 SYMBOL (mm) (inch) A B C d D D1 D2 − 0.008 3.937 ± 0.039 100 ± 1.00 0.827 ± 0.012 TO-252 Reel Taping Specification DD1D2 120° E F P P0 P1 T W A B C d MOSFET AQW-JTR53

Comchip Technology CO., LTD. Page 7 REV:A Marking Code Standard Packaging Case Type TO-252 REEL (pcs) Reel Size (inch) 132,500 REEL PACK Part Number Marking Code ACMS100N04D-HF 050N04D Suggested P.C.B. PAD Layout SIZE (inch) 0.071 (mm) 1.80 2.70 1.50 0.106 0.059 TO-252 2.30 0.091 A B C D 6.40 0.252E 6.80 0.268F A B C D E F D 050N04D XXX = Control code XXX MOSFET G AQW-JTR53