ACJT805-10F

ACJT8 JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 6- http://www.jjwdz.com ACJT8 Series 8A TRIACs Rev.3.0 DESCRIPTION: The ACJT8 series of double mesa technology provide high interference immunity, They can be used as an static ON/OFF function in electrical control system, and used as a driver of low power and high inductance or resistive loads, such as jet pumps of dishwashers, fans of air-conditioner ... ACJT8xx-xxA provides insulation voltage rated at 2500V RMS and ACJT8xx-xxF provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. MAIN FEATURES Symbol Value Unit IT(RMS) 8 A VDRM /VRRM 1000 V IGT ≤5 or ≤10 or ≤25 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage( Tj =25℃) VDRM 1000 V Repetitive peak reverse voltage( Tj =25℃) VRRM 1000 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V RMS on-state current TO-251/ TO-252 (TC=100℃) IT(RMS) 8 A TO-220A(Ins)/ TO-220F(Ins) (TC=90℃) TO-220B(Non-Ins) (TC=103℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 80 A TO-252 T1(1) G(3) T2(2) TO-251 1 2 3 TO-220A Insulated TO-220 Insulated TO-220B Non-Insulated 3 3

ACJT8 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 6- http://www.jjwdz.com I2t value for fusing ( tp=10ms) I2t 32 A2s Rate of rise of on-state current (IG=2×IGT) dIT/dt 50 A/μs Peak gate current IGM 1 A Average gate power dissipation PG(AV) 0.1 W Peak gate power PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit ACJT805 ACJT810 ACJT825 IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 5 10 25 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 1.4 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX 10 25 35 mA Ⅱ 20 30 55 IH IT=100mA MAX 10 15 30 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 200 600 1000 V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=11A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 1.25 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-251/ TO-252 2.5 ℃/W TO-220A(Ins)/ TO-220F(Ins) 3.5 TO-220B(Non-Ins) 2.1

ACJT8 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 6- http://www.jjwdz.com

ORDERING INFORMATION

IT(RMS):8A 05: IGT1-3≤5mA 10: IGT1-3≤10mA 25: IGT1-3≤25mA A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) H:TO-251 K:TO-252JieJie Microelectronics Co.,Ltd Triacs 10:VDRM /VRRM≥1000V PACKAGE MECHANICAL DATA A D E H G B C C2ΦMax 3.5mm F Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45° 3.63 0.143 0.80 0.031 45°TO-220F Ins

ACJT8 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 6- http://www.jjwdz.com PACKAGE MECHANICAL DATA A D C E H L G B Dimensions Millimeters InchesRef. A B C D E G H L 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4° 4°TO-251 A D E H

0.6 MIN

C G B Dimensions Millimeters InchesRef. A B C D E G H 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4° 4° 4.40 4.70 0.173 0.185 V2 0° 8° 0° 8°V2 TO-252

ACJT8 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 6- http://www.jjwdz.com PACKAGE MECHANICAL DATA A F C E G B D H ΦMax 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220A Ins JIE A F C E G B D H Φ Max 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220B Non-Ins

ACJT8 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 6 / 6- http://www.jjwdz.com FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of holding current, latching curretn versus junction temperature FIG.1 Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) TO-251/ TO-252 P(w) 0 2 4 6 8 10 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) Tj=125℃ -40 -20 0 20 40 60 80 100 120 140 IH,IL(Tj) /IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tj (℃) FIG.5: Relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 IGT(Tj) /IGT(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IGT1&IGT2 Tj (℃) IH IL IGT3 TO-220A(Ins)/ TO-220F(Ins) Tj=25℃ TO-220B (Non-Ins) α=180° t=20ms One cycle Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 12-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.