ACJT225-10V

ACJT2 JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 7- http://www.jjwdz.com ACJT2 Series 2A TRIACs Rev.4.0 DESCRIPTION: ACJT2 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place. ACJT2xx-xxF/ACJT2xx-xxFP provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. MAIN FEATURES Symbol Value Unit IT(RMS) 2 A VDRM /VRRM 1000 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage( Tj =25℃) VDRM 1000 V Repetitive peak reverse voltage( Tj =25℃) VRRM 1000 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V RMS on-state current TO-251/ TO-252/ SOT-223(TC=103℃) IT(RMS) 2 A SOT-89 (TC=98℃) TO-92 (TC=90℃) TO-220F(Ins)/ TO-220FP(Ins)(TC=100℃) Non repetitive surge peak on-state current ( full cycle, F=50Hz) ITSM 20 A I2t value for fusing ( tp=10ms) I2t 2 A2s T1(1) G(3) T2(2) TO-92 SOT-223 TO-251 TO-252 SOT-89 TO-220FP Insulated 1 1 1 3 3 3 3TO-220F Insulated 1 2 3

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 7- http://www.jjwdz.com Rate of rise of on-state current (IG =2×IGT) dI/dt 50 A/μs Peak gate current IGM 1 A Average gate power dissipation PG(AV) 0.1 W Peak gate power PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit ACJT210 ACJT225 IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 10 25 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX 25 50 mA Ⅱ 35 60 IH IT=100mA MAX 10 40 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 600 1000 V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=2.8A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-251/ TO-252 4.5 ℃/W TO-92 11.2 SOT-223 5.8 SOT-89 8.9 TO-220F(Ins)/ TO-220FP(Ins) 7.5

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 7- http://www.jjwdz.com

ORDERING INFORMATION

IT(RMS):2A 10: IGT1-3≤10mA 25: IGT1-3≤25mA V:SOT-223 F:TO-220F(Ins) FP:TO-220FP(Ins) U:TO-92 N:SOT-89 H:TO-251 K:TO-252 JieJie Microelectronics Co.,Ltd Triacs 10:VDRM /VRRM≥1000V PACKAGE MECHANICAL DATA K G B Φ Max 1.5mm H A F C N N E P V D J Dimensions Millimeters InchesRef. A B C D E F G H J K N P V 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.60 0.80 1.1 0.043 - 1.27 - 0.050- - - 2.30 - 0.091- - 0.36 0.50 0.014 0.020 15.012.70 0.500 0.591 2.04 2.66 0.080 0.105 1.86 2.06 0.073 0.081 4.3 0.169- - 0.024 0.031 - - - - TO-92

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 7- http://www.jjwdz.com PACKAGE MECHANICAL DATA A D C E H L G B Dimensions Millimeters InchesRef. A B C D E G H L 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4° 4°TO-251 A D E H

0.6 MIN

C G B Dimensions Millimeters InchesRef. A B C D E G H 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4° 4° 4.40 4.70 0.173 0.185 V2 0° 8° 0° 8°V2 TO-252

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 7- http://www.jjwdz.com PACKAGE MECHANICAL DATA

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 6 / 7- http://www.jjwdz.com PACKAGE MECHANICAL DATA A D E H G B C C2ΦMax 3.5mm F Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45° 3.63 0.143 0.80 0.031 45°TO-220F Ins A D E B C F Φ Max 3.5mm G Dimensions Millimeters InchesRef. A B C D E F G H 4.50 0.74 0.47 2.45 4.90 0.83 0.65 2.75 0.177 0.029 0.019 0.096 0.193 0.033 0.026 0.108 2.60 3.00 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.4 0.386 0.410 6.40 6.80 0.252 0.268 3.30 0.130 45° 3.63 0.143 0.80 0.031 45°TO-220FP Ins H

ACJT2 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 7 / 7- http://www.jjwdz.com FIG.3: Surge peak on-state current versus number of cycles FIG.1 Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) TO-251/TO-252/ SOT-223 P(w) 0 0.5 1 1.5 2 2.5 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) Tj=125℃ 3 3 Tj=25℃ TO-92 SOT-89 TO-220F(Ins)/ TO-220FP(Ins) α=180° t=20ms One cycle FIG.6: Relative variations of holding current, latching curretn versus junction temperature -40 -20 0 20 40 60 80 100 120 140 IH,IL(Tj) /IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tj (℃) FIG.5: Relative variations of gate trigger current versus junction temperature IGT(Tj) /IGT(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IGT1&IGT2 Tj (℃) IH IL IGT3 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the fourth version which is made in 10-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.