ACJT1035-10A

ACJT10 JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com ACJT10 Series 10A TRIACs Rev.3.0 DESCRIPTION: The ACJT10 series of double mesa technology provide high interference immunity, They can be used as an static ON/OFF function in electrical control system, and used as a driver of low power and high inductance or resistive loads, such as jet pumps of dishwashers, fans of air-conditioner ... ACJT10xx-xxA provides insulation voltage rated at 2500V RMS and ACJT10xx-xxF provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. MAIN FEATURES Symbol Value Unit IT(RMS) 10 A VDRM /VRRM 1000 V IGT ≤10 or ≤35 or ≤50 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage( Tj=25℃) VDRM 1000 V Repetitive peak reverse voltage( Tj=25℃) VRRM 1000 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V RMS on-state current TO-220A(Ins) (TC=90℃) IT(RMS) 10 A TO-220B(Non-Ins) (TC=100℃) TO-220F(Ins) (TC=84℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 100 A I2t value for fusing ( tp=10ms) I2t 55 A2s T1(1) G(3) T2(2) TO-220A Insulated TO-220F Insulated TO-220B Non-Insulated 3 3

ACJT10 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 5- http://www.jjwdz.com Rate of rise of on-state current (IG=2×IGT) dIT/dt 50 A/μs Peak gate current IGM 2 A Average gate power dissipation PG(AV) 0.1 W Peak gate power PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit ACJT1010 ACJT1035 ACJT1050 IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 10 35 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.4 1.4 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX 20 70 80 mA Ⅱ 35 80 100 IH IT=100mA MAX 20 50 70 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 500 1500 2000 V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=14A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 1.5 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-220A(Ins) 3.1 ℃/W TO-220B(Non-Ins) 2.3 TO-220F(Ins) 3.5

ACJT10 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 5- http://www.jjwdz.com

ORDERING INFORMATION

IT(RMS):10A 10: IGT1-3≤10mA 35: IGT1-3≤35mA 50: IGT1-3≤50mA A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins)JieJie Microelectronics Co.,Ltd Triacs 10:VDRM /VRRM≥1000V PACKAGE MECHANICAL DATA A F C E G B D H ΦMax 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220A Ins

ACJT10 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 5- http://www.jjwdz.com PACKAGE MECHANICAL DATA JIE A F C E G B D H Φ Max 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220B Non-Ins A D E H G B C C2ΦMax 3.5mm F Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45° 3.63 0.143 0.80 0.031 45°TO-220F Ins

ACJT10 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of holding current, latching curretn versus junction temperature FIG.1 Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 2 4 6 8 10 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) Tj=125℃ -40 -20 0 20 40 60 80 100 120 140 IH,IL(Tj) /IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 105 Tj (℃) FIG.5: Relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 IGT(Tj) /IGT(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IGT1&IGT2 Tj (℃) Tj=25℃ IH IL IGT3 TO-220F(Ins) TO-220B(Non-Ins) TO-220A(Ins) α=180° t=20ms One cycle Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 12-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.